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    • 10. 发明公开
    • Wavelength conversion device using nonlinear medium having quantum dots
    • 使用具有量子点的非线性介质的波长转换装置
    • EP2568328A3
    • 2013-12-11
    • EP12195862.3
    • 2003-09-10
    • FUJITSU LIMITED
    • Akiyama, TomoyukiHatori, NobuakiSugawara, Mitsuru
    • G02F1/35
    • B82Y20/00G02F1/3536G02F1/3556G02F2001/01791
    • A wavelength conversion device including a nonlinear medium (20) having quantum dots (24) uses a tunable laser as an excitation light source of optical four wave mixing, and performs wavelength conversion for a wide bandwidth signal light with optical four wave mixing. The nonlinear medium (20) is disposed on an n type GaAs [100] orientation substrate (21) and includes an n type AlGaAs clad layer (22) formed on the substrate (21) and a lower part SCH layer (23) including non-doped GaAs formed on the clad layer (22). An island-like area of non-doped InAs or InGaAs, which is formed by S-K mode growth is formed on the SCH layer (23) as quantum dots (24) and a non-doped GaAs barrier layer (25) is formed on the SCH layer (23) in a manner covering the quantum dots (24). An upper part SCH layer (27) including non-doped GaAs is formed on the acive layer (26) and a p type AlGaAs clad layer (28) is formed on the upper part SCH layer (27). An upper part electrode (29) is formed on the clad layer (28) and a lower part electrode (30) is formed on a bottom surface of the substrate (21).
    • 包括具有量子点(24)的非线性介质(20)的波长转换装置使用可调谐激光器作为光学四波混频的激励光源,并且对光学四波混频的宽带宽信号光执行波长转换。 非线性介质(20)设置在n型GaAs [100]取向基板(21)上并包括形成在基板(21)上的n型AlGaAs覆盖层(22)和包括非基板 形成在包层(22)上的掺杂GaAs。 在SCH层(23)上形成由SK模式生长形成的未掺杂InAs或InGaAs岛状区域作为量子点(24),并在其上形成未掺杂GaAs阻挡层(25) SCH层(23)覆盖量子点(24)。 包括未掺杂GaAs的上部SCH层(27)形成在活性层(26)上,并且在上部SCH层(27)上形成p型AlGaAs覆盖层(28)。 在包覆层(28)上形成上部电极(29),在基板(21)的下表面形成下部电极(30)。