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    • 10. 发明公开
    • Multi-temperature CMOS gas sensor
    • Mehrtemperatur-CMOS-Gassensor
    • EP2778667A1
    • 2014-09-17
    • EP13001268.5
    • 2013-03-13
    • Sensirion AG
    • Lechner, MoritzBürgi, Lukas
    • G01N27/12G01N27/27G01N33/00
    • G01N27/123G01N27/128G01N33/0031
    • The gas sensor comprises a membrane (16) with several sensing locations (2a - 4c) arranged thereon. At each sensing location (2a - 4c) a sensing material (20) is provided that changes its resistivity in the presence of gaseous analytes. Electrodes (19) are located on the membrane (16) in electrical contact with the sensing material (20) in order to measure a parameter indicative of the conductance of the sensing material (20). The sensing locations (2a - 4c) are heated by a heater assembly (6, 8) that is structured to generate different temperatures at the sensing locations (2a - 4c), which allows to carry out measurements for different temperatures and to therefrom gain a better understanding of the analytes.
    • 气体传感器包括其上布置有多个感测位置(2a-4c)的膜(16)。 在每个感测位置(2a-4c),提供感测材料(20),其在气体分析物存在的情况下改变其电阻率。 电极(19)位于与感测材料(20)电接触的膜(16)上,以便测量指示感测材料(20)的电导的参数。 感测位置(2a-4c)被加热器组件(6,8)加热,加热器组件被构造成在感测位置(2a-4c)处产生不同的温度,这允许对不同的温度进行测量并从而获得 更好地了解分析物。