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1. 发明公开

EP4448849A1 INTERNAL SURFACE ELECTROCHEMICAL TREATMENT ELECTRODE 失效
公开(公告)号：EP4448849A1
公开(公告)日：2024-10-23
申请号：EP22905513.2
申请日：2022-12-08
申请人： 3DM Biomedical Pty Ltd
发明人： KLOWER, Dean
IPC分类号： C25B11/043 , C25B11/046 , B33Y80/00 , C25B11/02 , C25D11/02 , C25D17/00 , C25F3/16 , C25F3/20 , C25F7/00 , H01B7/04 , B23H3/04
CPC分类号： B23H3/04 , C25F3/16 , C25F3/20 , C25F7/00 , B23H9/14 , B33Y40/20 , B22F10/60 , B22F2999/0020130101 , C25D11/005 , C25D17/007

2. 发明公开

EP4401896A1 ELECTROCHEMICAL TREATMENT DEVICE 审中-实审
公开(公告)号：EP4401896A1
公开(公告)日：2024-07-24
申请号：EP22868475.9
申请日：2022-09-19
申请人： Ensitech IP Pty Ltd
发明人： WHITE, Clive Stuart
IPC分类号： B08B1/00 , C25F1/00 , C25F3/16 , H01R43/00 , H02M1/44 , H02M7/53 , H02M7/537 , H02M7/5387 , A46B11/06 , A46B15/00 , A46B5/00 , B23H3/02 , B23H3/04
CPC分类号： B23H3/04 , C25F1/00 , H02M7/5387 , B23H9/06 , B08B7/00 , A46B13/02 , C25F7/00 , C25F3/02 , C25D11/005 , C25D11/022 , C25D11/024

3. 发明授权

EP2673403B1 INSULATED METAL SUBSTRATE 有权
公开(公告)号：EP2673403B1
公开(公告)日：2018-11-14
申请号：EP12706093.7
申请日：2012-02-07
申请人： Cambridge Nanotherm Limited
发明人： SHASHKOV, Pavel , KHOMUTOV, Gennady , YEROKHIN, Aleksey , USOV, Sergey
IPC分类号： C25D5/18 , C25D11/00 , C25D11/04 , C25D11/26 , C25D11/30 , C25D11/32 , C25D13/02 , C25D21/12 , H01L23/14
CPC分类号： C25D5/18 , C25D11/00 , C25D11/005 , C25D11/02 , C25D11/024 , C25D11/026 , C25D11/04 , C25D11/06 , C25D11/26 , C25D11/30 , C25D11/32 , C25D13/02 , C25D15/00 , C25D21/12 , H01L23/142 , H01L23/3677 , H01L23/3735 , H01L2224/48227 , H01L2224/49109 , H01L2924/01327 , H01L2924/09701 , H01L2924/1305 , H01L2924/13055 , H05K1/021 , H05K1/053 , H05K1/115 , H05K1/18 , H05K2201/0116 , H05K2203/0315 , H05K2203/1147 , Y10T428/1317 , Y10T428/24917 , Y10T428/249969 , H01L2924/00
摘要： A method of forming a non-metallic coating on a metallic substrate involves the steps of positioning the metallic substrate in an electrolysis chamber and applying a sequence of voltage pulses of alternating polarity to electrically bias the substrate with respect to an electrode. Positive voltage pulses anodically bias the substrate with respect to the electrode and negative voltage pulses cathodically bias the substrate with respect to the electrode. The amplitude of the positive voltage pulses is potentiostatically controlled, whereas the amplitude of the negative voltage pulses is galvanostatically controlled.

4. 发明公开

EP3344801A1 PROCEDE AMELIORE DE FORMATION D'UN REVETEMENT DE CONDUIT DE CULASSE ET CULASSE AINSI OBTENUE 审中-公开
公开(公告)号：EP3344801A1
公开(公告)日：2018-07-11
申请号：EP16762776.9
申请日：2016-09-05
申请人： Montupet S.A. , Sifco Applied Surface Concepts
发明人： KÉRAMPRAN, Patrick , MASSINON, Denis
IPC分类号： C25D11/04 , F02F1/42
CPC分类号： F02F1/4264 , C25D11/005 , C25D11/024 , C25D11/04 , F02F1/004 , F05C2203/0869 , F05C2253/12
摘要： The invention relates to a method for forming a lining on the walls of an inner pipe of a cast aluminium-alloy part, including inserting a cathode into the pipe, circulating an electrolyte solution in said pipe between the cathode and the walls of the pipe forming an anode, and applying a potential difference between the anode and the cathode, the method being characterised in that applying the potential difference between the anode and the cathode includes applying a series of DC voltage pulses to the anode. The invention also relates to a cylinder head in which the exhaust pipes are lined with a lining obtained by implementing said method.

5. 发明公开

EP3215280A1 SYSTÈME ET PROCÉDÉ DE TRAITEMENT LOCAL DE SURFACE 有权转让
标题翻译： SYSTÈMEETPROCÉDÉDE TRAITEMENT LOCAL DE SURFACE
公开(公告)号：EP3215280A1
公开(公告)日：2017-09-13
申请号：EP15808702.3
申请日：2015-11-04
申请人： Stelia Aerospace
发明人： RIVES, Bertrand
IPC分类号： B05C3/00 , B05C9/04 , B05C3/109 , B64F5/00 , C25D13/00 , B05C3/12 , B05C3/04
CPC分类号： C25D5/026 , B05C3/005 , B05C3/04 , B05C3/109 , B05C3/12 , B05C3/20 , B05C9/04 , B05D1/18 , B05D1/32 , B05D2202/00 , C23F1/08 , C23G3/00 , C25D5/34 , C25D11/005 , C25D11/022 , C25D17/00 , C25D17/02 , C25D21/02 , C25D21/06 , C25D21/10 , C25D21/12
摘要： The invention concerns a system for the local surface treatment of an aeronautical part (1) to be treated. Said system is characterised in that it comprises a plurality of reservoirs (18, 19, 20, 21} each comprising a treatment product (22, 23, 24, 25), at least one bath box (102a, 102b) suitable for delimiting a sealed space (26a, 26b) between said bath box (102a, 102b) and a portion (101a, 101b) of the part to be treated, and a controlled circuit (10) for supplying said sealed space (26a, 26b) with treatment product (22, 23, 24, 25) from the reservoirs (18, 19, 20, 21) linking at least said reservoir (18, 19, 20, 21) to said sealed space (26a, 26b) and comprising valves allowing the management of the supply of the sealed space by one or more reservoirs of the plurality of reservoirs.
摘要翻译：本发明涉及一种用于待处理的航空部件（1）的局部表面处理的系统。所述系统的特征在于，其包括多个储器（18,19,20,21），每个储器包括处理产品（22,23,24,25），至少一个浴箱（102a，102b），所述至少一个浴箱适于界定（102a，102b）与待处理部件的一部分（101a，101b）之间的密封空间（26a，26b）以及用于向所述密封空间（26a，26b）供应处理物的受控回路（10）（18,19,20,21）将至少所述储存器（18,19,20,21）连接到所述密封空间（26a，26b）的储存器（18,19,20,21）的产品（22,23,24,25）通过多个储存器中的一个或多个储存器来管理密封空间的供应。

6. 发明授权

EP2689052B1 REMOVABLE ANODISING AGENT, IN PARTICULAR FOR LOCAL ANODIC OXIDATION OF METAL SURFACES 有权
标题翻译：剥ANODISIERMITTEL，特别是对金属表面局部阳极氧化
公开(公告)号：EP2689052B1
公开(公告)日：2016-11-30
申请号：EP12711145.8
申请日：2012-03-22
申请人： Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. , Airbus Operations GmbH
发明人： BURCHARDT, Malte , DIECKHOFF, Stefan , HARTWIG, Andreas , KLEEMEIER, Malte , TECZYK, Katharina , VULLIET, Philippe , FANGMEIER, Armin
IPC分类号： C25D11/06 , C25D11/02 , C25D11/26 , C25D17/12 , C25D11/04 , C25D11/30 , C25D11/34
CPC分类号： C25D17/12 , C25D11/005 , C25D11/022 , C25D11/04 , C25D11/06 , C25D11/26 , C25D11/30 , C25D11/34

7. 发明公开

EP2878452A4 SUPPORT FOR LITHOGRAPHIC PRINTING PLATE AND MANUFACTURING METHOD THEREFOR, AS WELL AS ORIGINAL LITHOGRAPHIC PRINTING PLATE 有权
标题翻译：支持用于平版印版及其制备方法和原始的光刻DRUCKPLATTE
公开(公告)号：EP2878452A4
公开(公告)日：2016-03-23
申请号：EP13823769
申请日：2013-07-26
申请人： FUJIFILM CORP
发明人： TAGAWA YOSHIHARU , KUROKAWA SHINYA , MATSUURA ATSUSHI , MIYAGAWA YUYA , SAWADA HIROKAZU , NISHINO ATSUO
IPC分类号： B41N3/03 , B41N1/14 , C25D11/12 , C25D11/24 , G03F7/00 , G03F7/09
CPC分类号： B41N1/14 , B41N1/083 , B41N3/034 , C25D11/005 , C25D11/08 , C25D11/12 , C25D11/16 , C25D11/24 , C25F3/04
摘要： The purpose of the present invention is to provide a support for a lithographic printing plate. The support has excellent scratch resistance and with the support, an original lithographic printing plate that has excellent printing durability when used as a lithographic printing plate and exhibits excellent on-machine developability can be obtained. For this support for a lithographic printing plate, which is provided with an aluminum plate and an anodized aluminum film thereon and which has micropores in the anodized film that extend in the depth direction from the surface that is on the opposite side from the aluminum plate: the micropores are configured from a large diameter hole section that extends from the surface of the anodized film to a mean depth of 75 - 120 nm (depth (A)) and a small diameter hole section that connects with the bottom of the large diameter hole section and extends from the connection position to a mean depth of 900-2000 nm; the mean diameter at the anodized film surface of the large diameter hole section is 10 nm to less than 30 nm, and the mean diameter and the depth (A) satisfy the relationship (depth (A)/mean diameter) = greater than 4.0 to 12.0; and the mean diameter at the connection position of the small diameter pore section is greater than 0 and less than 10 nm.

8. 发明公开

EP2619790A4 HIGH-THROUGHPUT BATCH POROUS SILICON MANUFACTURING EQUIPMENT DESIGN AND PROCESSING METHODS 失效转让
标题翻译： DRAFT设备多孔硅的高通量和处理其生产
公开(公告)号：EP2619790A4
公开(公告)日：2015-11-11
申请号：EP11827704
申请日：2011-09-24
申请人： SOLEXEL INC
发明人： YONEHARA TAKAO , TAMILMANI SUBRAMANIAN , KRAMER KARL-JOSEF , ASHJAEE JAY , MOSLEHI MEHRDAD M , MIYAJI YASUHIRO , HAYASHI TOKUYUKI , INAHARA TAKAMITSU
IPC分类号： C25F3/12 , C25F7/00
CPC分类号： C25F3/12 , C25D11/005 , C25D11/32 , C25D17/001 , C25D17/06 , C25F7/00
摘要： This disclosure enables high-productivity fabrication of porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.

9. 发明公开

EP2730684A1 INSULATING REFLECTIVE SUBSTRATE AND METHOD FOR PRODUCING SAME 审中-公开
标题翻译：免责声明
公开(公告)号：EP2730684A1
公开(公告)日：2014-05-14
申请号：EP12807272.5
申请日：2012-07-02
申请人： Fujifilm Corporation
发明人： HATANAKA Yusuke , UESUGI Akio
IPC分类号： C25D11/16 , C25F3/04 , H01L33/60
CPC分类号： F21V7/22 , C25D5/022 , C25D11/005 , C25D11/08 , C25D11/12 , C25D11/16 , C25D11/20 , F21K9/64 , H01L33/502 , H01L33/60 , H01L2224/48091 , H01L2924/1301 , H01L2924/181 , H05K1/0274 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： The purpose of the present invention is to provide an insulating reflective substrate which is capable of providing a light emitting element that has excellent insulating properties and excellent diffuse reflectance. An insulating reflective substrate of the present invention comprises an aluminum layer and an aluminum oxide layer that is provided on the surface of the aluminum layer. The aluminum oxide layer has a thickness from 80 µm to 300 µm (inclusive), and the aluminum oxide layer has large pits each having an opening in the surface of the aluminum oxide layer. The large pits have an average opening diameter of more than 1 µm but 30 µm or less and an average depth of 80 µm or more but less than the thickness of the aluminum oxide layer. The average distance between two large pits is 10 µm or more but less than the thickness of the aluminum oxide layer. The ratio of the total area of the openings of the large pits to the surface area of the aluminum oxide layer is from 10% to 40% (inclusive). Each large pit has small pits each having an opening in the inner surface of the large pit, and the small pits have an average opening diameter of 5-1,000 nm.
摘要翻译：本发明的目的是提供一种绝缘反射基板，其能够提供具有优异的绝缘性能和优异的漫反射率的发光元件。本发明的绝缘反射基板包括设置在铝层的表面上的铝层和氧化铝层。氧化铝层的厚度为80μm以上且300μm以下，氧化铝层在氧化铝层的表面具有大的开口部。大凹坑的平均开口直径大于1μm，但为30μm以下，平均深度为80μm以上，但小于氧化铝层的厚度。两个大凹坑之间的平均距离为10μm以上但小于氧化铝层的厚度。大坑的开口总面积与氧化铝层的表面积的比率为10％〜40％（含）以上。每个大坑具有在大坑的内表面上具有开口的小凹坑，并且小凹坑的平均开口直径为5-1,000nm。

10. 发明授权

EP2055809B1 Verfahren und Vorrichtung zum Erzeugen einer Konversionsschicht 有权转让
标题翻译：用于制造转换层的方法和设备
公开(公告)号：EP2055809B1
公开(公告)日：2014-05-14
申请号：EP08105723.4
申请日：2008-11-03
申请人： Hydro Aluminium Rolled Products GmbH
发明人： Grohmann, Torsten
IPC分类号： C25D11/04 , C25D17/00 , C23C22/76 , B05B5/14
CPC分类号： C25D11/04 , B05B5/14 , B05B12/126 , B05C9/04 , C23C22/76 , C25D11/005

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