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    • 7. 发明公开
    • PROCESS FOR PREPARING In 2?O 3?-SnO 2? PRECURSOR SOL AND PROCESS FOR PREPARING THIN FILM OF In 2?O 3?-SnO 2?
    • 2的生产方法在2→3 0?-Sn0的先驱吗? 及其制备在2→3 0?-Sn0 2的薄膜的制造方法?
    • EP0940368A1
    • 1999-09-08
    • EP98921798.9
    • 1998-05-25
    • KRI International, Inc.
    • TOKI, MotoyukiFUKUI, ToshimiASAKUMA, NaokoFUJII, Takamitsu
    • C01G19/00C30B29/22G09F9/30C09D5/24H01B13/00
    • C01G19/00C03C17/253C03C2217/231C03C2218/113C04B41/505C04B2111/805C04B2111/94C04B41/0036C04B41/0045C04B41/4537C04B41/4554C04B41/5072
    • The invention relates to a method for forming a transparent conductive thin film of In 2 O 3 -SnO 2 on a surface of a plastics substrate of less heat resistance other than that of glass, ceramics, etc. When an In 2 O 3 -SnO 2 precursor sol is produced by hydrolyzing and polymerizing a solution containing indium alkoxide and tin alkoxide, either tri-s-butoxyindium or tri-t-butoxyindium is used as the indium alkoxide. water is added to the solution containing indium alkoxide and tin alkoxide at a temperature of not higher than -20°C. The obtained In 2 O 3 -SnO 2 precursor sol is applied to a surface of a substrate to form a gel film, then the gel film is either irradiated with an ultraviolet beam of which wave length is not longer than 360 nm, or irradiated with an ultraviolet beam of which wave length is not longer than 260 nm and further irradiated with a laser beam of which wave length is not longer than 360 nm, to crystallize the gel forming the thin film, whereby an In 2 O 3 -SnO 2 thin film having a conductivity is formed on the surface of the substrate.
    • 本发明涉及一种用于当氧化铟-的SnO2前体溶胶通过水解和生成比玻璃,陶瓷等的其他耐热性更小的塑料基材的表面上形成氧化铟 - 的SnO 2构成的透明导电薄膜 聚合含有铟醇盐和锡的醇盐,要么三S-butoxyindium或三叔butoxyindium的溶液被用作铟醇盐。 将水加入到该溶液中含有铟锡醇盐和醇盐在不低于-20℃。将得到氧化铟-的SnO2前体溶胶施加到基板的表面高的温度以形成凝胶的电影,则该电影是凝胶 任一照射与哪个波长的紫外光束不长于360纳米,或在哪个波长的紫外线照射不大于260nm的长和与波长的激光束进一步照射不大于360nm的长 ,以结晶凝胶形成薄膜,由此,在具有导电性氧化铟-SnO2薄膜是在基板的表面上形成。