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1. 发明公开

EP3227912A4 CHUCKING WARPED WAFER WITH BELLOWS 有权
公开(公告)号：EP3227912A4
公开(公告)日：2018-08-01
申请号：EP15865022
申请日：2015-12-04
申请人： KLA TENCOR CORP
发明人： HUANG LUPING
IPC分类号： H01L21/683 , B23Q3/08 , B25B11/00
CPC分类号： H01L21/6838 , B25B11/005 , F16J3/047 , H01L21/68785
摘要： A vacuum chuck has at least one suction assembly that pulls a wafer surface toward a chucking surface. The suction assembly may be used with a wafer that is warped. A suction force engages a pad of a suction assembly with the wafer surface and retracts a bellows of the suction assembly. As the bellows retracts and draws the wafer surface closer to the chucking surface, the suction force provided by the vacuum chuck can pull the wafer flat.

2. 发明公开

EP2609418A4 DEFECT INSPECTION AND PHOTOLUMINESCENCE MEASUREMENT SYSTEM 有权
公开(公告)号：EP2609418A4
公开(公告)日：2018-01-24
申请号：EP11820356
申请日：2011-08-08
申请人： KLA-TENCOR CORP
发明人： SAPPEY ROMAN , MEEKS STEVEN W
IPC分类号： G01N21/88 , G01J3/36 , G01J3/44 , G01N21/64 , G01N21/95 , H01L21/66
CPC分类号： G01J3/36 , G01J3/4412 , G01N21/6489 , G01N21/9501
摘要： A system for defect detection and photoluminescence measurement of a sample may include a radiation source configured to target radiation to the sample. The system may also include an optics assembly positioned above the sample to receive a sample radiation. The system may also include a filter module configured to receive the sample radiation collected by the optics assembly. The filter module may separate the sample radiation collected by the optics assembly into a first radiation portion and a second radiation portion. The system may also include a defect detection module configured to receive the first radiation portion from the filter module. The system may further include a photoluminescence measurement module configured to receive the second radiation portion from the filter module. The defect detection module and the photoluminescence measurement module may be configured to receive the respective first radiation portion and the second radiation portion substantially simultaneously.

5. 发明公开

EP2526409A4 SITE BASED QUANTIFICATION OF SUBSTRATE TOPOGRAPHY AND ITS RELATION TO LITHOGRAPHY DEFOCUS AND OVERLAY 有权
标题翻译： STANDORTBASIERTE QUANTIFIZIERUNG EINER SUBSTRATTOPOGRAPHIE UND IHRESVERHÄLTNISSESZU DEFOKUSSIERUNG UND在DER LITHOGRAPHIE
公开(公告)号：EP2526409A4
公开(公告)日：2017-10-04
申请号：EP11732096
申请日：2011-01-05
申请人： KLA-TENCOR CORP
发明人： VEERARAGHAVAN SATHISH , SINHA JAYDEEP K
IPC分类号： G01N21/95 , G01B5/28 , G03F7/20 , G06F17/50 , H01L21/66
CPC分类号： G06F17/5009 , G01B11/24 , G01N21/9501 , G03F7/705 , G03F7/70633 , G03F7/70641 , G03F7/7065 , G03F7/70783 , G06F17/5018 , H01L22/12
摘要： A method and system for modeling and analyzing wafer nanotopography data utilizes a nonlinear contact finite element model. Inputs to the model include lithography chuck parameters and site-based geometry data. Outputs from the model include in-plane distortions and out-of-plane distortions, from which defocus and overlay can be derived.
摘要翻译：用于建模和分析晶片纳米形貌数据的方法和系统利用非线性接触有限元模型。该模型的输入包括光刻卡盘参数和基于位置的几何数据。该模型的输出包括平面内失真和平面外失真，可以从中导出失焦和重叠。

6. 发明公开

EP3063785A4 PROCESS-INDUCED DISTORTION PREDICTION AND FEEDFORWARD AND FEEDBACK CORRECTION OF OVERLAY ERRORS 有权
标题翻译： PROZESSINDUZIERTE VERZERRUNGSVORHERSAGE SOWIEVORWÄRTSWEITERLEITUNGUND FEEDBACK-KORREKTUR VONÜBERDECKUNGSFEHLERN
公开(公告)号：EP3063785A4
公开(公告)日：2017-08-30
申请号：EP14857915
申请日：2014-10-29
申请人： KLA-TENCOR CORP
发明人： VUKKADALA PRADEEP , CHEN HAIGUANG , SINHA JAYDEEP , VEERARAGHAVAN SATHISH
IPC分类号： H01L21/66
CPC分类号： G01N19/08 , C23C14/54 , G01L1/00 , G01L5/0047 , G03F7/705 , G03F7/70633 , G03F7/70783 , H01L22/12 , H01L22/20

7. 发明公开

EP3087432A4 SYSTEM AND METHOD FOR CLEANING EUV OPTICAL ELEMENTS 有权
标题翻译： SYSTEM UND VERFAHREN ZUR REINIGUNG OPTISCHER EUV-ELEMENTE
公开(公告)号：EP3087432A4
公开(公告)日：2017-08-23
申请号：EP14875394
申请日：2014-12-23
申请人： KLA-TENCOR CORP
发明人： DELGADO GILDARDO , CHILESE FRANCIS C , GARCIA RUDY
IPC分类号： G03F7/20
CPC分类号： G03F7/70033 , G03F7/70925 , G03F7/70933
摘要： A system for cleaning or suppressing contamination or oxidation in a EUV optical setting includes an illumination source, a detector, a first set of optical elements to direct light from the illumination source to a specimen and a second set of optical elements to receive illumination from the specimen and direct the illumination to the detector. The system also includes one or more vacuum chambers for containing the first and second set of optical elements and containing a selected purge gas ionizable by the light emitted by the illumination source. The first or second set of optical elements includes an electrically biased optical element having at least one electrically biased surface. The electrically biased optical element has a bias configuration suitable to attract one or more ionic species of the selected purge gas to the electrically biased surface in order to clean contaminants from the electrically biased surface.
摘要翻译：用于清洁或抑制EUV光学设置中的污染或氧化的系统包括照明源，检测器，将来自照明源的光引导至样本的第一组光学元件，以及第二组光学元件以接收来自标本并将照明引导至检测器。该系统还包括一个或多个真空室，用于容纳第一和第二组光学元件并包含通过照明源发射的光可电离的选定吹扫气体。第一或第二组光学元件包括具有至少一个电偏置表面的电偏置光学元件。电偏置的光学元件具有适合于将所选择的吹扫气体的一种或多种离子物质吸引到电偏置表面以便从电偏置表面清除污染物的偏置配置。

8. 发明公开

EP3025565A4 SYSTEM AND METHOD FOR GENERATION OF EXTREME ULTRAVIOLET LIGHT 有权
标题翻译： SYSTEM UND VERFAHREN ZUR ERZEUGUNG VON EXTREMEM UV-LICHT
公开(公告)号：EP3025565A4
公开(公告)日：2017-05-24
申请号：EP14829857
申请日：2014-07-21
申请人： KLA-TENCOR CORP
发明人： BYKANOV ALEXANDER , KHODYKIN OLEG , WACK DANIEL , TSIGUTKIN KONSTANTIN , HALE LAYTON , WALSH JOSEPH , CHILESE FRANK
IPC分类号： G03F7/20 , G01J1/16 , G01N21/956 , G03F1/84 , G21B1/23 , G21K5/00 , H01L21/027 , H05G2/00
CPC分类号： H05G2/008 , G01J1/16 , G01N21/956 , G01N2021/95676 , G01N2201/061 , G03F1/84 , G03F7/70033 , G03F7/70891 , H05H2240/00
摘要： An EUV light source includes a rotatable, cylindrically-symmetric element having a surface coated with a plasma-forming target material, a drive laser source configured to generate one or more laser pulses sufficient to generate EUV light via formation of a plasma by excitation of the plasma-forming target material, a set of focusing optics configured to focus the one or more laser pulses onto the surface of the rotatable, cylindrically-symmetric element, a set of collection optics configured to receive EUV light emanated from the generated plasma and further configured to direct the illumination to an intermediate focal point, and a gas management system including a gas supply subsystem configured to supply plasma-forming target material to the surface of the rotatable, cylindrically-symmetric element.
摘要翻译： EUV光源包括具有用等离子体形成靶材涂覆的表面的可旋转圆柱对称元件，配置成产生一个或多个激光脉冲的驱动激光源，该激光脉冲足以通过激励等离子体形成靶材料，一组聚焦光学器件，其被配置为将所述一个或多个激光脉冲聚焦到所述可旋转圆柱对称元件的表面上;一组收集光学器件，其被配置为接收从所产生的等离子体发出的EUV光并且被进一步配置以将照明引导至中间焦点;以及气体管理系统，其包括气体供应子系统，所述气体供应子系统被配置为将等离子体形成目标材料供应至所述可旋转圆柱对称元件的表面。

9. 发明公开

EP3163251A1 METHOD AND SYSTEM FOR REGIONAL PHASE UNWRAPPING WITH PATTERN-ASSISTED CORRECTION 有权
标题翻译： VERFAHREN UND系统ZUR REGIONALEN PHASENABWICKLUNG MITSTRUKTURUNTERSTÜTZTERKORREKTUR
公开(公告)号：EP3163251A1
公开(公告)日：2017-05-03
申请号：EP16191014
申请日：2016-09-28
申请人： KLA-TENCOR CORP
发明人： LIU HELEN , ZHAO XUAN , LI XIAOWEI
IPC分类号： G01B11/24 , G01B9/02
CPC分类号： G01B9/02083 , G01B9/02078 , G01B9/02088 , G01B11/0608 , G01B11/2441 , G01B2210/56
摘要： A wafer metrology system includes an interferometer sub-system and a controller. The interferometer sub-system is configured to generate an interferogram with an intensity map that corresponds to a modulated representation of a wafer surface. Further, the interferometer sub-system includes a detector configured to capture the interferogram. The controller includes one or more processors configured to generate a wrapped phase map of the interferogram, define patterns associated with features on the wafer, and correct phase discontinuities by applying a phase unwrapping procedure to the wrapped phase map to generate an unwrapped phase map and correcting phase discontinuities in the unwrapped phase map based on the patterns, or by combining phase unwrapping and correction in a unified step. Further, the patterns comprise two or more structures such that a portion of the unwrapped phase map associated with structures of the same type is continuous across borders separating structures of the same type.
摘要翻译：晶片测量系统包括干涉仪子系统和控制器。干涉仪子系统被配置为生成具有对应于晶片表面的调制表示的强度图的干涉图。此外，干涉仪子系统包括配置成捕获干涉图的检测器。该控制器包括一个或多个处理器，该一个或多个处理器被配置为产生干涉图的卷绕相位图，定义与晶片上的特征相关联的图案，并且通过将相位展开程序应用于卷绕相位图来校正相位不连续性以生成展开相位图并校正基于图案的展开相位图中的相位不连续性，或者通过在统一的步骤中组合相位展开和校正。此外，图案包括两个或更多个结构，使得与相同类型的结构相关联的一部分展开的相位图跨过分隔相同类型的结构的边界是连续的。

10. 发明公开

EP2389685A4 SYSTEMS AND METHODS FOR DETECTING DEFECTS ON A WAFER 无效
标题翻译：系统维也纳ZUR ERKENNUNG VON DEFEKTEN AUF EINEM WAFER
公开(公告)号：EP2389685A4
公开(公告)日：2017-04-19
申请号：EP10733928
申请日：2010-01-22
申请人： KLA-TENCOR CORP
发明人： CHEN LU , KIRKWOOD JASON , MAHADEVAN MOHAN , SMITH JAMES A , GAO LISHENG , HUANG JUNQING , LUO TAO , WALLINGFORD RICHARD
IPC分类号： H01L21/66 , G01N21/88 , G01N21/95
CPC分类号： G01N21/9501 , G01N2021/887 , H01L22/12

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