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1. 发明公开

EP1320126A2 Method for dicing a semiconductor wafer using U-grooves 审中-公开
标题翻译：维尔芬
公开(公告)号：EP1320126A2
公开(公告)日：2003-06-18
申请号：EP02026679.7
申请日：2002-11-29
申请人： Xerox Corporation
发明人： Perregaux, Alain E. , Hosier, Paul A. , Jedlicka, Josef E. , Salatino, Nicholas J. , Tandon, Jagdish
IPC分类号： H01L21/304 , H01L21/784 , B28D5/02 , H01L21/306 , H01L27/14 , H01L31/00
CPC分类号： B28D5/022 , H01L21/78
摘要： The present disclosure relates that by modifying chip die dicing methodology to a U-groove profile from a V-groove profile by modifying the second etch step to be a dry etch instead of a wet etch results in a direct cost savings by eliminating a more expensive process step, as well as the need for stripping the developed photoresist layer. Furthermore, going to a U-groove profile accomplishes additional indirect and greater cost savings resulting from increased process throughput, improved yield, and reduced metal layer defects.
摘要翻译：本公开内容涉及通过将第二蚀刻步骤修改为干蚀刻而不是湿蚀刻将芯片芯片切割方法修改为U形槽轮廓，从而通过消除更昂贵的直接成本节省工艺步骤，以及剥离显影的光致抗蚀剂层的需要。此外，进入U形凹槽轮廓可实现额外的间接和更大的成本节省，这是由于加工量增加，产量提高和金属层缺陷减少。

2. 发明授权

EP0305204B1 Method of fabricating image sensor dies for use in assembling arrays 失效
标题翻译：一种用于生产图像传感器元件，其被组装成模块的处理。
公开(公告)号：EP0305204B1
公开(公告)日：1994-01-19
申请号：EP88307937.8
申请日：1988-08-26
申请人： XEROX CORPORATION
发明人： Jedlicka, Josef E. , Page, Kimberly R. , Perregaux, Alain E. , Wilczak, Fred F., Jr.
IPC分类号： H01L21/304
CPC分类号： B27G19/10 , H01L21/3043 , Y10S148/028

3. 发明公开

EP0449637A2 Photoreceptor arrays 失效
标题翻译：感光阵列
公开(公告)号：EP0449637A2
公开(公告)日：1991-10-02
申请号：EP91302759.5
申请日：1991-03-28
申请人： XEROX CORPORATION
发明人： Perregaux, Alain E. , Tandon, Jagdish C. , Jedlicka, Josef E.
IPC分类号： H04N1/46 , H04N9/04 , H04N1/028
CPC分类号： H04N1/486
摘要： A color chip construction (5) especially adapted for use in fabricating full-width arrays, in which the individual chip photosites consist of three complementary color (blue, green, and red) photodiodes (32, 34, 36) shaped and positioned to provide a rectangular photosite (12) with perpendicular edges that enhance butting of like color chips together to form full-width color arrays.
摘要翻译：特别适用于制造全宽阵列的彩色芯片结构（5），其中各个芯片光敏层由三个互补色（蓝色，绿色和红色）光电二极管（32,34,36）组成，其形状和位置可以提供具有垂直边缘的矩形光晕（12），增强了类似颜色芯片的对接以形成全宽度彩色阵列。

4. 发明授权

EP1187221B1 Linear color image sensor array with IR filter and method of forming the same 有权
标题翻译：与IR滤波器，及其制造方法的线性彩色图象传感器
公开(公告)号：EP1187221B1
公开(公告)日：2008-06-04
申请号：EP01121303.0
申请日：2001-09-05
申请人： Xerox Corporation
发明人： Perregaux, Alain E. , Jedlicka, Josef E.
IPC分类号： H01L31/0216 , H01L27/146
CPC分类号： H01L27/14643 , H01L27/14685

5. 发明授权

EP0911651B1 Method for determining an edge 有权
标题翻译：一种用于边缘判定处理
公开(公告)号：EP0911651B1
公开(公告)日：2004-01-07
申请号：EP98308370.0
申请日：1998-10-14
申请人： XEROX CORPORATION
发明人： Seachman, Ned J. , Taillie, Joseph P. , Carolan, Kevin M. , Baldwin, Leroy A. , Brutovski, Robert , Perregaux, Alain E. , Hower, John D.
IPC分类号： G03G13/00 , B65H9/20
CPC分类号： G03G15/65 , B41J11/0095 , B65H9/20 , B65H2553/41 , G03G2215/00721

6. 发明公开

EP0305204A1 Method of fabricating image sensor dies for use in assembling arrays 失效
标题翻译：一种生产图像传感器元件，其被装配成模块的处理。
公开(公告)号：EP0305204A1
公开(公告)日：1989-03-01
申请号：EP88307937.8
申请日：1988-08-26
申请人： XEROX CORPORATION
发明人： Jedlicka, Josef E. , Page, Kimberly R. , Perregaux, Alain E. , Wilczak, Fred F., Jr.
IPC分类号： H01L21/304
CPC分类号： B27G19/10 , H01L21/3043 , Y10S148/028
摘要： A process for forming individual dies (5) having faces that allow the dies to be assembled against other like dies to form one and/or two dimensional scanning arrays wherein the active side of a wafer is etched to form small V-shaped grooves (34) defining the die faces, relatively wide grooves (40) are cut in the inactive side of the wafer opposite each V-shaped groove, and the wafer cut by sawing along the V-shaped grooves, the saw being located so that the side (62) of the saw blade (80) facing the die is aligned with the bottom of the V-shaped groove so that there is retained intact one side (35) of the V-shaped groove to intercept and prevent cracks and chipping caused by sawing from damaging the die active surface and any circuits thereon.
摘要翻译：一种用于形成个别过程中，这种（5），其具有面做允许它被组装针对其他像这样，以形成一个和/或两个维扫描阵列worin晶片的有源侧进行蚀刻而形成的小V形槽（34 ），定义的面，相对宽的凹槽（40）中的每个V形凹槽相对所述晶片的所述非活性侧被切断，晶片通过沿着V形槽锯切割，锯位于如此做了侧（ 62）面向所述模具中的锯条（80）的与所述V形槽的）的V形槽的底部，从而thatthere保留完好的一侧（35对准，以拦截和防止裂纹和通过锯切引起碎裂损坏管芯有效表面和其上的任何电路。

7. 发明公开

EP1187221A3 Linear color image sensor array with IR filter and method of forming the same 有权
标题翻译：与IR滤波器，及其制造方法的线性彩色图象传感器
公开(公告)号：EP1187221A3
公开(公告)日：2005-01-19
申请号：EP01121303.0
申请日：2001-09-05
申请人： Xerox Corporation
发明人： Perregaux, Alain E. , Jedlicka, Josef E.
IPC分类号： H01L31/0216 , H01L27/146
CPC分类号： H01L27/14643 , H01L27/14685
摘要： The present invention relates to a linear image sensor including a plurality of photosensitive chips (10) mounted en-to-end on a substrate (20) to form a collinear array of photosites, which extends across a page image being scanned for a scanner, copier, facsimile machine, or other document reading device. The photosites are preferably for sensing the three primary colors, blue, green and red. preferably, there are three parallel linear arrays for the three primary colors. The preferred device comprises an infrared blocking filter on selected photosites.

8. 发明授权

EP0911701B1 Calibration of an edge registration system 有权
标题翻译：边缘注册系统的校准
公开(公告)号：EP0911701B1
公开(公告)日：2003-07-23
申请号：EP98308390.8
申请日：1998-10-14
申请人： XEROX CORPORATION
发明人： Seachman, Ned J. , Taillie, Joseph P. , Carolan, Kevin M. , Baldwin, Leroy A. , Brutovski, Robert , Perregaux, Alain E. , Hower, John D., jr.
IPC分类号： G03G15/00 , B65H9/20
CPC分类号： G03G15/65 , B65H43/08 , B65H2511/514 , G01B11/028 , G01D5/342 , G03G2215/00616 , G03G2215/00721

9. 发明公开

EP0272820A3 Transient state liquid crystal image bar with contrast enhancement 失效
标题翻译：瞬态状态液晶图像条与对比度增强
公开(公告)号：EP0272820A3
公开(公告)日：1988-10-05
申请号：EP87310601
申请日：1987-12-02
申请人： XEROX CORPORATION
发明人： Dir, Gary A. , Perregaux, Alain E.
IPC分类号： G02F01/133
CPC分类号： G02F1/1393 , G02F1/13363 , G02F2001/133531 , G02F2001/133638 , G02F2413/01
摘要： A transient state liquid crystal image bar (12) having enhanced contrast with lower required driving voltage. The image bar is of the type having a nematic liquid crystal cell configured as a single array of dot shutters energizable by a single frequency voltage with crossed polarizer (14) and analyzer (15). The polarizing axis of the polarizer is at 45 degrees with the liquid crystal molecules (13) in their rest state. Thus, when all the image bar shutters are energized, it is in the non-transmission condition. For bursts of light to pass, the voltage to selected dot shutters is interrupted and reapplied. In one embodiment, the improvement is achieved by an optical compensator (28) or thin prism placed between the polarizer and the liquid crystal cell. In another embodiment, a quarter-wave plate is placed between the liquid crystal cell and the analyzer, with the analyzer being rotated about the image bar's optical axis a predetermined angle from its initial crossed position with respect to the polarizer, so that there is increased extinction of the light exiting from the liquid crystal cell, when the liquid crystal material is in its normally stable energized state.

10. 发明公开

EP1320126A3 Method for dicing a semiconductor wafer using U-grooves 审中-公开
标题翻译：切割半导体晶圆与U形槽的方法
公开(公告)号：EP1320126A3
公开(公告)日：2009-03-11
申请号：EP02026679.7
申请日：2002-11-29
申请人： Xerox Corporation
发明人： Perregaux, Alain E. , Hosier, Paul A. , Jedlicka, Josef E. , Salatino, Nicholas J. , Tandon, Jagdish
IPC分类号： H01L21/304 , H01L21/784 , B28D5/02 , H01L21/306 , H01L27/14 , H01L31/00
CPC分类号： B28D5/022 , H01L21/78
摘要： The present disclosure relates that by modifying chip die dicing methodology to a U-groove profile from a V-groove profile by modifying the second etch step to be a dry etch instead of a wet etch results in a direct cost savings by eliminating a more expensive process step, as well as the need for stripping the developed photoresist layer. Furthermore, going to a U-groove profile accomplishes additional indirect and greater cost savings resulting from increased process throughput, improved yield, and reduced metal layer defects.

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