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    • 2. 发明公开
    • Extreme ultraviolet source
    • Extrem-ultraviolett Quelle
    • EP1549116A2
    • 2005-06-29
    • EP04028246.9
    • 2004-11-29
    • USHIODENKI KABUSHIKI KAISHA
    • Sato, HirotoTeramoto, YusukeBessho, KazunoriYamatani, Daiki
    • H05G2/00
    • H05G2/003
    • To both increase the efficiency of conversion into EUV radiation energy and also increase the amount of emerging EUV radiation in an EUV source a discharge tube (13) is connected to a gas supply space (132) for supply of the discharge gas which is located radially with respect to an optical axis (1). The discharge gas is supplied to the discharge space (131) through the gas supply space (132), passes through the center opening of the anode (11), emerges from the discharge part and is afterwards evacuated from an evacuation opening. The anode (11) and the cathode (12) are connected to a pulse current source. Discharge plasma is produced and EUV radiation (2) is formed by a heavy current pulse from the pulse current source within the discharge space of the discharge tube. The EUV radiation which has formed passes through a through-opening of the anode and is emitted to the outside.
    • 为了提高转换成EUV辐射能量的效率并且还增加EUV源中的新出现的EUV辐射的量,放电管(13)连接到气体供应空间(132),用于供应放射状的放电气体 相对于光轴(1)。 放电气体通过气体供给空间(132)供给到放电空间(131),通过阳极(11)的中心开口,从排出部排出,然后从排气口排出。 阳极(11)和阴极(12)连接到脉冲电流源。 产生放电等离子体,并且通过来自放电管放电空间内的脉冲电流源的大电流脉冲形成EUV辐射(2)。 形成的EUV辐射通过阳极的通孔并被发射到外部。
    • 3. 发明公开
    • EUV light source device with raw material gasified by energy beam before plasma gets excited
    • EUV-Lichtquelle,deren aktives材料vor derPlasmazündungdurch einen Energiestrahl verdampft wird
    • EP1883280A1
    • 2008-01-30
    • EP07014791.3
    • 2007-07-27
    • USHIODENKI KABUSHIKI KAISHA
    • Shirai, TakahiroSato, HirotoBessho, KazunoriTeramoto, Yusuke
    • H05G2/00
    • H05G2/003H05G2/005
    • Electrode ablation is controlled in EUV light source device that gasifies a raw material by irradiation with an energy beam and produces a high-temperature plasma using electrodes. A raw material for plasma is dripped in a space in the vicinity of, but other than, the discharge region and from which the gasified raw material can reach the discharge region between the discharge electrodes and a laser beam irradiates the high-temperature plasma raw material. A gasified high-temperature plasma raw material, gasified by the laser beam, spreads in the direction of the discharge region. At this time, power is applied on a pair of discharge electrodes, the gasified high-temperature plasma raw material is heated and excited to become a high-temperature plasma, and EUV radiation is emitted. This EUV radiation is collected by an EUV collector mirror and sent to lithography equipment.
    • 在EUV光源装置中控制电极消融,通过用能量束照射使原料气化,并使用电极产生高温等离子体。 用于等离子体的原料在除了放电区域之外的空间内滴落,并且气化原料可以从其中到达放电电极之间的放电区域,并且激光束照射高温等离子体原料 。 由激光束气化的气化高温等离子体原料在放电区域的方向上扩散。 此时,对一对放电电极施加电力,气化的高温等离子体原料被加热激发成为高温等离子体,并且发射EUV辐射。 该EUV辐射由EUV收集器镜收集并发送到光刻设备。