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    • 1. 发明公开
    • INVERTED ORTHOGONAL SPIN TRANSFER LAYER STACK
    • UMGEKEHRTER ORTHOGONALER旋转传递速度计
    • EP2909838A4
    • 2016-06-01
    • EP13847226
    • 2013-10-15
    • UNIV NEW YORK
    • KENT ANDREWBACKES DIRK
    • G11C11/16H01F10/32H01L43/08
    • H01L37/00B82Y40/00G11C11/16G11C11/161H01F10/3272H01F10/3286H01F41/307H01L43/08
    • A magnetic device includes a pinned magnetic layer having a first fixed magnetization vector with a first fixed magnetization direction. The magnetic device also includes a free magnetic layer having a variable magnetization vector having at least a first stable state and a second stable state. The magnetic device also has a first non-magnetic layer and a reference. The first non-magnetic layer spatially separates the pinned magnetic layer and the free magnetic layer. The magnetic device also includes a second non-magnetic layer spatially separating the free magnetic layer and the reference magnetic layer. A magnetic tunnel junction, located below the pinned magnetic layer, is formed by the free magnetic layer, the second non-magnetic layer, and the reference magnetic layer. Application of a current pulse, having either positive or negative polarity and a selected amplitude and duration, through the magnetic device switches the variable magnetization vector.
    • 磁性装置包括具有第一固定磁化方向的第一固定磁化矢量的钉扎磁性层。 磁性装置还包括具有至少第一稳定状态和第二稳定状态的可变磁化矢量的自由磁性层。 磁性装置还具有第一非磁性层和参考。 第一非磁性层空间地分离被钉扎的磁性层和自由磁性层。 磁性装置还包括在空间上分离自由磁性层和参考磁性层的第二非磁性层。 位于钉扎磁性层下方的磁性隧道结由自由磁性层,第二非磁性层和参考磁性层形成。 通过磁性装置施加具有正极性或负极性以及所选择的幅度和持续时间的电流脉冲切换可变磁化矢量。