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1. 发明公开

EP2495350A2 Microwave plasma processing device with a plasma processing gas supply member 有权
标题翻译：。。。。。。。。。。。。。。
公开(公告)号：EP2495350A2
公开(公告)日：2012-09-05
申请号：EP12161819.3
申请日：2004-03-11
申请人： Toyo Seikan Kaisha, Ltd.
发明人： Kobayashi, Akira , Yamada, Kouji , Kurashima, Hideo , Namiki, Tsunehisa , Aihara, Takeshi , Onozawa, Yasunori
IPC分类号： C23C16/511 , B65D1/00 , H05H1/46 , H01J37/32 , C23C16/455
CPC分类号： H01J37/3244 , C23C16/045 , C23C16/45568 , C23C16/45578 , C23C16/511 , H01J37/32192 , H05H1/46 , H05H2001/463
摘要： A microwave plasma processing device with a gas supply member capable of forming a uniform thin film on the interior surface of a substrate (e.g. a blow moulded bottle) is disclosed. The microwave plasma processing device comprises fixing means (14) for fixing the substrate (13) to be processed onto the center axis in a plasma processing chamber (1), exhaust means (142) for depressurizing the inside and outside of the substrate, a metal processing gas supply member (15) present in the substrate and forming a reentrant cylindrical resonating system along with the plasma processing chamber (1), and microwave introducing means (5) for introducing microwave into the plasma processing chamber to perform processing, wherein a microwave sealing member (143) is provided at a substrate-holding portion of the fixing means (14), and the connection position of the microwave introducing means (5) is set to a specified weak-field position of the field intensity distribution formed in the interior of the plasma processing chamber (1).
摘要翻译：公开了一种具有能够在基板（例如吹塑瓶）的内表面上形成均匀薄膜的气体供给部件的微波等离子体处理装置。微波等离子体处理装置包括用于将待处理基板（13）固定在等离子体处理室（1）中的中心轴上的固定装置（14），用于对衬底内部和外部进行减压的排气装置（142）存在于基板中的金属加工气体供给部件（15）以及与等离子体处理室（1）一起形成可折入的圆筒形谐振系统，以及用于将微波引入等离子体处理室进行处理的微波引入装置（5），其中微波密封构件（143）设置在固定装置（14）的基板保持部分处，并且微波引入装置（5）的连接位置被设定为形成在等离子体处理室（1）的内部。

2. 发明授权

EP1226935B1 Method and apparatus for manufacturing laminated material 无效
标题翻译：制造层压材料的方法和装置
公开(公告)号：EP1226935B1
公开(公告)日：2007-12-12
申请号：EP02000814.0
申请日：2002-01-14
申请人： Toyo Seikan Kaisha, Ltd.
发明人： Yamada, Kouji , Kobayashi, Akira , Kurashima, Hideo
IPC分类号： B32B37/00 , B29C69/00
CPC分类号： B32B37/153 , B29C47/00 , B29C47/0021 , B29C47/0057 , B29C47/0066 , B29C47/02 , B29C2793/0027 , B29C2793/0063 , B29L2009/00 , B32B27/36 , B32B37/085 , B32B37/206 , B32B38/105 , B32B2309/02 , B32B2309/105 , B32B2310/0843 , B32B2311/00 , B32B2398/20 , Y10T156/1064 , Y10T156/1322 , Y10T156/1741

3. 发明公开

EP2503023A3 Processing gas supply member for a microwave plasma processing device 有权
标题翻译：用于微波等离子体处理装置的气体供给元件
公开(公告)号：EP2503023A3
公开(公告)日：2013-11-06
申请号：EP12161825.0
申请日：2004-03-11
申请人： Toyo Seikan Kaisha, Ltd.
发明人： Kobayashi, Akira , Yamada, Kouji , Kurushima, Hideo , Namiki, Tsunehisa , Aihara, Takeshi , Onozawa, Yasunori
IPC分类号： C23C16/511 , B65D1/00 , H05H1/46 , H01J37/32 , C23C16/455 , C23C16/04 , H05H1/24
CPC分类号： H01J37/3244 , C23C16/045 , C23C16/45568 , C23C16/45578 , C23C16/511 , H01J37/32192 , H05H1/46 , H05H2001/463
摘要： A chemical plasma processing gas supply member (30) is provided. The gas supply member comprises a gas supply pipe (32) which is adapted to be inserted into a container held in a plasma processing chamber into which a microwave can be introduced, and to supply a reactive gas for forming a CVD film on an inner surface of the container, wherein the gas supply pipe (32) is sectionalized into two areas, namely an electric field intensity distribution stabilizing area (A), and an end gas induction area (B) which is positioned on an end side with respect to the electric field intensity distribution stabilizing area (A), at least a metal portion (32a) adapted to communicate with a shield wall constituting the plasma processing chamber and which extends from a root portion to a boundary between the electric field intensity distribution stabilizing area (A), and wherein the end gas induction area (B) in an axial direction is formed in the electric field intensity distribution stabilizing area (A), and the end gas induction area (B) is formed of a non-metal material (32b).

4. 发明公开

EP2495350A3 Microwave plasma processing device with a plasma processing gas supply member 有权
标题翻译：与气体供应元件微波等离子体处理装置
公开(公告)号：EP2495350A3
公开(公告)日：2013-01-09
申请号：EP12161819.3
申请日：2004-03-11
申请人： Toyo Seikan Kaisha, Ltd.
发明人： Kobayashi, Akira , Yamada, Kouji , Kurashima, Hideo , Namiki, Tsunehisa , Aihara, Takeshi , Onozawa, Yasunori
IPC分类号： C23C16/511 , B65D1/00 , H05H1/46 , H01J37/32 , C23C16/455 , C23C16/04 , H05H1/24
CPC分类号： H01J37/3244 , C23C16/045 , C23C16/45568 , C23C16/45578 , C23C16/511 , H01J37/32192 , H05H1/46 , H05H2001/463
摘要： A microwave plasma processing device with a gas supply member capable of forming a uniform thin film on the interior surface of a substrate (e.g. a blow moulded bottle) is disclosed. The microwave plasma processing device comprises fixing means (14) for fixing the substrate (13) to be processed onto the center axis in a plasma processing chamber (1), exhaust means (142) for depressurizing the inside and outside of the substrate, a metal processing gas supply member (15) present in the substrate and forming a reentrant cylindrical resonating system along with the plasma processing chamber (1), and microwave introducing means (5) for introducing microwave into the plasma processing chamber to perform processing, wherein a microwave sealing member (143) is provided at a substrate-holding portion of the fixing means (14), and the connection position of the microwave introducing means (5) is set to a specified weak-field position of the field intensity distribution formed in the interior of the plasma processing chamber (1).

5. 发明公开

EP2503023A2 Processing gas supply member for a microwave plasma processing device 有权
标题翻译： Gasversorgungselementfüreine Mikrowellenplasmabearbeitungsvorrichtung
公开(公告)号：EP2503023A2
公开(公告)日：2012-09-26
申请号：EP12161825.0
申请日：2004-03-11
申请人： Toyo Seikan Kaisha, Ltd.
发明人： Kobayashi, Akira , Yamada, Kouji , Kurushima, Hideo , Namiki, Tsunehisa , Aihara, Takeshi , Onozawa, Yasunori
IPC分类号： C23C16/511 , B65D1/00 , H05H1/46 , H01J37/32
CPC分类号： H01J37/3244 , C23C16/045 , C23C16/45568 , C23C16/45578 , C23C16/511 , H01J37/32192 , H05H1/46 , H05H2001/463
摘要： A chemical plasma processing gas supply member (30) is provided. The gas supply member comprises a gas supply pipe (32) which is adapted to be inserted into a container held in a plasma processing chamber into which a microwave can be introduced, and to supply a reactive gas for forming a CVD film on an inner surface of the container, wherein the gas supply pipe (32) is sectionalized into two areas, namely an electric field intensity distribution stabilizing area (A), and an end gas induction area (B) which is positioned on an end side with respect to the electric field intensity distribution stabilizing area (A), at least a metal portion (32a) adapted to communicate with a shield wall constituting the plasma processing chamber and which extends from a root portion to a boundary between the electric field intensity distribution stabilizing area (A), and wherein the end gas induction area (B) in an axial direction is formed in the electric field intensity distribution stabilizing area (A), and the end gas induction area (B) is formed of a non-metal material (32b).
摘要翻译：提供化学等离子体处理气体供给部件（30）。气体供给构件包括气体供给管（32），该气体供给管（32）适于插入保持在能够引入微波的等离子体处理室中的容器中，并且在内表面上提供用于形成CVD膜的反应气体，其中所述气体供给管（32）被分成两个区域，即电场强度分布稳定区域（A）和末端气体诱导区域（B），所述末端气体诱导区域位于相对于所述容器的端部侧电场强度分布稳定区域（A），至少一个适于与构成等离子体处理室的屏蔽壁相通并且从根部延伸到电场强度分布稳定区域（A）之间的边界的金属部分（32a）），并且其中在电场强度分布稳定区域（A）中形成有沿轴向的端部气体诱导区域（B），并且末端气体诱导区域（B）由非金属m （32b）。

6. 发明授权

EP2503023B1 Processing gas supply member for a microwave plasma processing device 有权
标题翻译：用于微波等离子体处理装置的气体供给元件
公开(公告)号：EP2503023B1
公开(公告)日：2016-02-24
申请号：EP12161825.0
申请日：2004-03-11
申请人： Toyo Seikan Kaisha, Ltd.
发明人： Kobayashi, Akira , Yamada, Kouji , Kurashima, Hideo , Namiki, Tsunehisa , Aihara, Takeshi , Onozawa, Yasunori
IPC分类号： C23C16/511 , B65D1/00 , H05H1/46 , H01J37/32 , C23C16/455 , C23C16/04 , H05H1/24
CPC分类号： H01J37/3244 , C23C16/045 , C23C16/45568 , C23C16/45578 , C23C16/511 , H01J37/32192 , H05H1/46 , H05H2001/463

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