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1. 发明公开

EP3238271A1 OPTO-ELECTRONIC DEVICE WITH TEXTURED SURFACE AND METHOD OF MANUFACTURING THEREOF 审中-公开
标题翻译：具有纹理化表面的光电装置及其制造方法
公开(公告)号：EP3238271A1
公开(公告)日：2017-11-01
申请号：EP15813453.6
申请日：2015-12-21
申请人： Total S.A. , Ecole Polytechnique , Centre National de la Recherche Scientifique
发明人： ROCA I CABARROCAS, Pere , CHEN, Wanghua , FOLDYNA, Martin , POULAIN, Gilles
IPC分类号： H01L31/0216 , H01L31/0232 , H01L31/0236
CPC分类号： H01L31/0236 , H01L31/02168 , H01L31/02327 , H01L31/18 , Y02E10/50
摘要： The present invention concerns an opto-electronic device comprising a semiconducting substrate, a layered interface comprising at least one layer (2, 3), said layered interface having a first surface (21) in contact with a surface (20) of said semiconducting substrate (1) and said layered interface being adapted for passivating said surface (20) of said semiconducting substrate (1), said layered interface having a second surface (23) and said layered interface being adapted for electrically insulating said first surface (21) from said second surface (23), and a textured surface structure comprising a plurality of nanowires (4) and a transparent dielectric coating (5), said textured surface structure being in contact with said second surface (23) of said layered interface, said plurality of nanowires (4) protruding from said second surface (23) and said plurality of nanowires (4) being embedded between said second surface (23) and said transparent dielectric coating (5).
摘要翻译：本发明涉及包括半导体衬底，包括至少一个层（2,3）的分层界面的光电子器件，所述分层界面具有与所述半导体衬底（2）的表面（20）接触的第一表面（21）（1）和所述分层界面适于钝化所述半导体衬底（1）的所述表面（20），所述分层界面具有第二表面（23），并且所述分层界面适于将所述第一表面（21）与所述第一表面所述第二表面（23）和包括多个纳米线（4）和透明电介质涂层（5）的纹理化表面结构，所述纹理化表面结构与所述分层界面的所述第二表面（23）接触，所述多个从所述第二表面（23）突出的纳米线（4），并且所述多个纳米线（4）嵌入在所述第二表面（23）和所述透明电介质涂层（5）之间。

2. 发明公开

EP3404693A1 APPARATUS AND METHOD FOR PATTERNED PROCESSING 有权转让
公开(公告)号：EP3404693A1
公开(公告)日：2018-11-21
申请号：EP17305586.4
申请日：2017-05-19
申请人： Total SA , Ecole Polytechnique , CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
发明人： BRUNEAU, Bastien , JOHNSON, Erik , BULKIN, Pavel , HABKA, Nada , POULAIN, Gilles , BENMAMMAR, Nacib
IPC分类号： H01J37/32 , C23C14/04 , C23C16/04 , H01L21/266 , H01L21/311 , H01L21/3213
摘要： An apparatus for patterned processing comprises a source of input gas (2), a source of energy suitable for generating a plasma from the input gas (2) in a plasma region and a grounded sample holder (12) configured for receiving a solid sample (5).
According to the invention, the apparatus comprises a mask (4) arranged between the plasma region and the grounded sample holder (12), the mask (4) having a first face (45) oriented toward the plasma region and a second face (46) oriented toward a surface (51) of the solid sample (5) to be processed, the mask (4) comprising a mask opening (40) extending from the first face to the second face, and an electrical power supply (16) adapted for applying a direct-current bias voltage to the mask, and the mask opening (40) being dimensioned and shaped so as to generate spatially selective patterned processing on the surface (51) of the solid sample (5).

3. 发明公开

EP3625816A1 APPARATUS AND METHOD FOR PATTERNED PROCESSING 审中-公开
公开(公告)号：EP3625816A1
公开(公告)日：2020-03-25
申请号：EP18723874.6
申请日：2018-05-18
申请人： Total SA , Ecole Polytechnique , Centre National de la Recherche Scientifique
发明人： BRUNEAU, Bastien , JOHNSON, Erik , BULKIN, Pavel , HABKA, Nada , POULAIN, Gilles , BENMAMMAR, Nacib
IPC分类号： H01J37/32 , C23C14/04 , C23C16/04 , H01L21/266 , H01L21/311 , H01L21/3213

4. 发明授权

EP3404693B1 APPARATUS AND METHOD FOR PATTERNED PROCESSING 有权转让
公开(公告)号：EP3404693B1
公开(公告)日：2019-11-13
申请号：EP17305586.4
申请日：2017-05-19
申请人： Total SA , Ecole Polytechnique , CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
发明人： BRUNEAU, Bastien , JOHNSON, Erik , BULKIN, Pavel , HABKA, Nada , POULAIN, Gilles , BENMAMMAR, Nacib
IPC分类号： H01J37/32 , C23C14/04 , C23C16/04 , H01L21/266 , H01L21/311 , H01L21/3213

5. 发明公开

EP3179522A1 METHOD FOR MANUFACTURING INTER-DIGITATED BACK CONTACT PHOTOVOLTAIC DEVICES 审中-公开
标题翻译：制造背间接触式光伏装置的方法
公开(公告)号：EP3179522A1
公开(公告)日：2017-06-14
申请号：EP15306957.0
申请日：2015-12-08
申请人： TOTAL MARKETING SERVICES , École Polytechnique , Centre National de la Recherche Scientifique
发明人： LEAL, Ronan , POULAIN, Gilles , DAMON-LACOSTE, Jérôme
IPC分类号： H01L31/18
CPC分类号： H01L31/0682 , H01L31/1804 , Y02E10/547
摘要： The invention concerns a method for manufacturing an IBC device comprising the steps of:
a) providing a crystalline silicon substrate (1) having a back surface (12);
b) forming first masked areas (22) and first opened areas (21) ;
c) first selective epitaxial PECVD step, so as to deposit a first crystalline silicon layer (31) on the first opened areas (21) and a non-crystalline silicon layer (32) on the first masked areas (22) ;
d) depositing a second dielectric layer (4) ;
e) selectively etching the first dielectric layer (2) for forming second opened areas (42) and second masked areas (41) coating the first crystalline silicon layer (31);
f) second selective epitaxial PECVD step, so as to deposit a second crystalline silicon layer (52) on the second opened areas (42) and a second non-crystalline silicon layer (51) on the second masked areas (41) ;
g) selectively etching the second dielectric layer (4).
摘要翻译：本发明涉及一种制造IBC器件的方法，包括以下步骤：a）提供具有背表面（12）的晶体硅衬底（1）; b）形成第一掩蔽区域（22）和第一开放区域（21）; c）第一选择性外延PECVD步骤，以在第一开口区域（21）上沉积第一晶体硅层（31），并在第一掩模区域（22）上沉积非晶体硅层（32）; d）沉积第二介电层（4）; e）选择性地蚀刻第一介电层（2）以形成涂覆第一晶体硅层（31）的第二开口区域（42）和第二掩模区域（41）; f）第二选择性外延PECVD步骤，以便在所述第二开口区域（42）上沉积第二晶体硅层（52），并且在所述第二掩模区域（41）上沉积第二非晶体硅层（51）; g）选择性地蚀刻第二介电层（4）。

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