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    • 1. 发明公开
    • CRYSTAL GROWTH CONTROL AGENT, METHOD FOR FORMING p-TYPE SEMICONDUCTOR MICROPARTICLES OR p-TYPE SEMICONDUCTOR MICROPARTICLE FILM, COMPOSITION FOR FORMING HOLE TRANSPORT LAYER, AND SOLAR CELL
    • 用于控制晶体生长过程用于形成p型半导体微粒或P型半导体微颗粒膜上形成组合物的空穴传输层和太阳能电池,
    • EP3116019A1
    • 2017-01-11
    • EP15762215.0
    • 2015-03-10
    • Tokyo Ohka Kogyo Co., Ltd.
    • NAKAMURA, AkimasaYAMANOUCHI, AtsushiASAI, TakahiroISHIKAWA, Kaoru
    • H01L21/368H01L51/44H01L51/46
    • H01G9/2009H01G9/2013H01G9/2022H01G9/2031H01G9/2059Y02E10/542
    • First, there is provided a crystal growth control agent which is capable of suppressing an increase in a crystal size of a p-type semiconductor, and performing chemical modification on a surface of p-type semiconductor microparticle, a method for forming p-type semiconductor microparticles or a p-type semiconductor microparticle film by using the crystal growth control agent, a composition for forming a hole transport layer of a solar cell, and a solar cell using the composition for forming a hole transport layer. Second, there is provided a composition for forming a hole transport layer which is capable of prompting crystallization and fine pulverization of the p-type semiconductor and performing the chemical modification on the surface of the p-type semiconductor microparticle even in the case where an organic salt (an ionic liquid) containing an anion other than the thiocyanate ion is used, and a solar cell using the composition for forming a hole transport layer. According to the present invention, the crystal growth control agent contains at least one of sulfur-containing compounds (except for thiocyanate) selected from the group consisting of a compound, which generates a thiolate anion due to dissociation of a proton or a cation, and a disulfide compound, and controls crystal growth of a p-type semiconductor.
    • 首先,提供了一种晶体生长调节剂的所有其能够抑制在p型半导体的晶体尺寸的增加,和p型半导体微粒,为形成p型半导体的方法的表面进行化学改性的 微粒或p型半导体微粒电影通过使用晶体生长控制剂,用于形成太阳能电池的空穴传输层的组合物,以及使用该组合物用于形成空穴传输层的太阳能电池。 第二,提供了一种组合物用于形成空穴传输层中的所有其能够促使结晶和p型半导体的精细粉碎和p型半导体微粒的表面上,即使在的情况下在有机进行化学修饰的 盐(以离子性液体)包含比硫氰酸根离子等阴离子的使用,以及使用用于形成空穴传输层用组合物的太阳能电池。 。根据本发明,晶体生长控制剂含有含硫化合物中的至少一种(除了硫氰酸酯)选自的化合物,的选择哪个基因速率的硫醇盐阴离子由于质子或阳离子的解离和 p型半导体的二硫化物化合物,并控制晶体生长。