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    • 2. 发明公开
    • CRYSTAL GROWTH CONTROL AGENT, METHOD FOR FORMING p-TYPE SEMICONDUCTOR MICROPARTICLES OR p-TYPE SEMICONDUCTOR MICROPARTICLE FILM, COMPOSITION FOR FORMING HOLE TRANSPORT LAYER, AND SOLAR CELL
    • 用于控制晶体生长过程用于形成p型半导体微粒或P型半导体微颗粒膜上形成组合物的空穴传输层和太阳能电池,
    • EP3116019A1
    • 2017-01-11
    • EP15762215.0
    • 2015-03-10
    • Tokyo Ohka Kogyo Co., Ltd.
    • NAKAMURA, AkimasaYAMANOUCHI, AtsushiASAI, TakahiroISHIKAWA, Kaoru
    • H01L21/368H01L51/44H01L51/46
    • H01G9/2009H01G9/2013H01G9/2022H01G9/2031H01G9/2059Y02E10/542
    • First, there is provided a crystal growth control agent which is capable of suppressing an increase in a crystal size of a p-type semiconductor, and performing chemical modification on a surface of p-type semiconductor microparticle, a method for forming p-type semiconductor microparticles or a p-type semiconductor microparticle film by using the crystal growth control agent, a composition for forming a hole transport layer of a solar cell, and a solar cell using the composition for forming a hole transport layer. Second, there is provided a composition for forming a hole transport layer which is capable of prompting crystallization and fine pulverization of the p-type semiconductor and performing the chemical modification on the surface of the p-type semiconductor microparticle even in the case where an organic salt (an ionic liquid) containing an anion other than the thiocyanate ion is used, and a solar cell using the composition for forming a hole transport layer. According to the present invention, the crystal growth control agent contains at least one of sulfur-containing compounds (except for thiocyanate) selected from the group consisting of a compound, which generates a thiolate anion due to dissociation of a proton or a cation, and a disulfide compound, and controls crystal growth of a p-type semiconductor.
    • 首先,提供了一种晶体生长调节剂的所有其能够抑制在p型半导体的晶体尺寸的增加,和p型半导体微粒,为形成p型半导体的方法的表面进行化学改性的 微粒或p型半导体微粒电影通过使用晶体生长控制剂,用于形成太阳能电池的空穴传输层的组合物,以及使用该组合物用于形成空穴传输层的太阳能电池。 第二,提供了一种组合物用于形成空穴传输层中的所有其能够促使结晶和p型半导体的精细粉碎和p型半导体微粒的表面上,即使在的情况下在有机进行化学修饰的 盐(以离子性液体)包含比硫氰酸根离子等阴离子的使用,以及使用用于形成空穴传输层用组合物的太阳能电池。 。根据本发明,晶体生长控制剂含有含硫化合物中的至少一种(除了硫氰酸酯)选自的化合物,的选择哪个基因速率的硫醇盐阴离子由于质子或阳离子的解离和 p型半导体的二硫化物化合物,并控制晶体生长。
    • 4. 发明公开
    • NONAQUEOUS SECONDARY BATTERY AND METHOD FOR MANUFACTURING SAME
    • 非水性二次电池及其制造方法
    • EP3012897A1
    • 2016-04-27
    • EP14814103.9
    • 2014-06-19
    • Tokyo Ohka Kogyo Co., Ltd.
    • ASAI, TakahiroISHIKAWA, KaoruHAGIHARA, Mitsuo
    • H01M10/058H01M2/02H01M4/139
    • H01M2/026H01M2/0207H01M4/139H01M4/64H01M10/04H01M10/0436H01M10/0525H01M10/0562H01M10/0565H01M10/058H01M10/0585H01M2220/30
    • Provided are: a nonaqueous secondary battery which can be reduced in the thickness without being decreased in the battery performance; and a method for manufacturing this nonaqueous secondary battery. A nonaqueous secondary battery according to the present invention is provided with: a positive electrode and a negative electrode which are substantially arranged in the same plane so that respective end surfaces face each other at a distance; a substrate by which the positive electrode and the negative electrode are affixed and supported; a cover member having gas barrier properties, which defines an airtight chamber together with the substrate, in said chamber the positive electrode and the negative electrode being contained; and an electrolyte which is contained in the airtight chamber so as to be positioned at least between the facing end surfaces of the positive electrode and the negative electrode, and which relates to the battery reaction between the positive electrode and the negative electrode.
    • 本发明提供一种非水系二次电池,能够降低电池性能而不降低电池的厚度, 以及该非水二次电池的制造方法。 根据本发明的非水二次电池设置有:正电极和负电极,所述正电极和负电极基本上布置在同一平面中,使得各自的端面彼此相距一定距离; 基板,通过该基板固定并支撑正极和负极; 与所述基板一起形成气密室的具有阻气性的罩部件,在所述室内收纳正极和负极; 以及电解质,其被包含在气密室中以至少定位在正极和负极的面对的端面之间,并且涉及正极和负极之间的电池反应。