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1. 发明公开

EP2690205A4 METHOD FOR PRODUCING SIC SINGLE CRYSTALS AND PRODUCTION DEVICE 失效转让
标题翻译：制造SIC晶体的方法和制造装置
公开(公告)号：EP2690205A4
公开(公告)日：2014-10-22
申请号：EP11861383
申请日：2011-07-27
申请人： TOYOTA MOTOR CO LTD , NIPPON STEEL & SUMITOMO METAL CORP
发明人： DAIKOKU HIRONORI , KAMEI KAZUHITO
IPC分类号： C30B29/36 , C30B19/04 , C30B19/06 , C30B19/12
CPC分类号： C30B15/22 , C30B17/00 , C30B19/04 , C30B19/061 , C30B19/12 , C30B29/36 , Y10T117/1032
摘要： Provided is a method for producing SiC single crystals while maintaining a temperature gradient such that the temperature decreases from within an Si solution inside a graphite crucible toward the solution surface, with the SiC seed crystals that have contacted the solution surface serving as the starting point for crystal seed growth, wherein when the crystal growth surface of the SiC seed crystals, which serves as the starting point for SiC single crystal growth, contacts the solution surface, the height by which the solution rises to the side of the SiC seed crystals is within the range where the SiC single crystals that have grown from the crystal growth surface and the SiC single crystals that have grown from the side grow as one SiC single crystal unit. Also provided is a device for producing an SiC single crystal comprising a graphite crucible, a heating device for heating and melting base materials in the crucible to form a base material solution and maintaining a temperature gradient required for growth of SiC single crystal, a support rod which holds a SiC seed crystal at its bottom end, and a holding structure which maintains the holding by the support rod so that a height by which the solution rises to the side of the SiC seed crystal is within a range where the SiC single crystal that have grown from the crystal growth surface and the SiC single crystal that have grown from the side grow as one SiC single crystal unit.
摘要翻译：提供了一种制造SiC单晶的方法，同时保持温度梯度，使得温度从石墨坩埚内的Si溶液中朝向溶液表面降低，与溶液表面接触的SiC晶种作为起始点晶种生长，其中当作为SiC单晶生长起始点的SiC晶种的晶体生长表面与溶液表面接触时，溶液向SiC晶种侧升高的高度在从晶体生长面生长的SiC单晶和从侧面生长的SiC单晶生长为SiC单晶单元的范围。还提供了一种用于制造包括石墨坩埚的SiC单晶的装置，用于在坩埚中加热和熔化基材的加热装置，以形成基材溶液并保持SiC单晶生长所需的温度梯度，支撑杆其在其底端保持SiC晶种，以及保持结构，其保持由支撑杆保持，使得溶液升高到SiC晶种一侧的高度在SiC单晶的范围内，已经从晶体生长表面生长，并且从侧面生长的SiC单晶作为一个SiC单晶单元生长。

2. 发明公开

EP2722421A4 APPARATUS AND METHOD FOR PRODUCING SIC SINGLE CRYSTAL 审中-公开
标题翻译：装置及其制造方法SIC单晶
公开(公告)号：EP2722421A4
公开(公告)日：2014-05-14
申请号：EP12800211
申请日：2012-06-15
申请人： NIPPON STEEL & SUMITOMO METAL CORP , TOYOTA MOTOR CO LTD
发明人： KUSUNOKI KAZUHIKO , KAMEI KAZUHITO , YASHIRO NOBUYOSHI , OKADA NOBUHIRO , DAIKOKU HIRONORI , KADO MOTOHISA , SAKAMOTO HIDEMITSU
IPC分类号： C30B29/36 , C30B15/32 , C30B19/06
CPC分类号： C30B35/00 , C30B9/10 , C30B11/003 , C30B15/32 , C30B17/00 , C30B19/068 , C30B19/08 , C30B29/36 , Y10T117/1068 , Y10T117/1092
摘要： The purpose of the present invention is to provide an apparatus for producing an SiC single crystal, which can efficiently cool a seed crystal attached to a seed shaft. This apparatus for producing an SiC single crystal includes: a crucible (14) for accommodating an Si-C solution (16); and a seed shaft (30) having a lower end surface (34) to which an SiC seed crystal (36) is to be attached. The seed shaft includes: an inner pipe (48) that extends in a height direction of the crucible and constitutes a first passage (60) thereinside; an outer pipe (50) that accommodates the inner pipe and constitutes a second passage (SP1) between itself and the inner pipe; and a bottom portion that has the lower end surface and covers a lower end opening of the outer pipe. One passage of the first and second passages serves as an introduction passage through which a coolant gas flows downward, and the other passage serves as a discharge passage through which the coolant gas flows upward. When viewed from an axial direction of the seed shaft, a region inside the pipe that constitutes the introduction passage is to be overlapped by a region of not less than 60% of the SiC seed crystal.

3. 发明公开

EP2985369A4 METHOD FOR MANUFACTURING SiC SINGLE CRYSTAL 审中-公开
标题翻译：用于生产单晶硅
公开(公告)号：EP2985369A4
公开(公告)日：2016-12-21
申请号：EP14782347
申请日：2014-04-09
申请人： NIPPON STEEL & SUMITOMO METAL CORP , TOYOTA MOTOR CO LTD
发明人： KUSUNOKI KAZUHIKO , KAMEI KAZUHITO , DAIKOKU HIRONORI , SAKAMOTO HIDEMITSU , KADO MOTOHISA
IPC分类号： C30B29/36 , C30B15/22 , C30B19/04 , C30B19/06 , C30B19/10
CPC分类号： C30B19/10 , C30B15/22 , C30B19/04 , C30B19/062 , C30B19/12 , C30B29/36

4. 发明公开

EP2775015A4 SiC SINGLE CRYSTAL MANUFACTURING METHOD 有权
标题翻译： HERSTELLUNGSVERFAHRENFÜREINEN SIC-EINKRISTALL
公开(公告)号：EP2775015A4
公开(公告)日：2015-01-21
申请号：EP11875192
申请日：2011-12-09
申请人： TOYOTA MOTOR CO LTD , NIPPON STEEL & SUMITOMO METAL CORP
发明人： KADO MOTOHISA , DAIKOKU HIRONORI , KUSUNOKI KAZUHIKO
IPC分类号： C30B29/36 , C30B19/04
CPC分类号： C30B15/22 , C30B15/02 , C30B19/04 , C30B29/36
摘要： Provided is a SiC single crystal manufacturing method whereby growing speed improvement required to have high productivity can be achieved, while maintaining flat growth in which uniform single crystal growth can be continued at the time of growing a SiC single crystal using a solution method. In this SiC single crystal manufacturing method, a SiC single crystal is grown in a crucible from a Si solution containing C. The SiC single crystal manufacturing method is characterized in alternately repeating: a high supersaturation degree growing period, in which the growth is promoted by maintaining the supersaturation degree of C in the Si solution higher than an upper limit critical value at which flat growth can be maintained, said supersaturation degree being at a growing interface between the Si solution and a SiC single crystal being grown; and a low supersaturation degree growing period, in which the growth is promoted by maintaining the supersaturation degree lower than the critical value.
摘要翻译：提供了一种SiC单晶制造方法，其中通过使用溶液法生长SiC单晶时，可以保持生长稳定的单晶生长，同时可以实现高生产率所需的生长速度提高。在该SiC单晶制造方法中，SiC单晶从含有C的Si溶液在坩埚中生长。SiC单晶制造方法的特征在于，交替重复：高过饱和度生长期，其中通过保持Si溶液中C的过饱和度高于可以保持平坦生长的上限临界值，所述过饱和度处于生长Si溶液和SiC单晶之间的生长界面处; 以及低过饱和度生长期，其中通过保持过饱和度低于临界值来促进生长。

5. 发明公开

EP2876190A4 SiC SINGLE CRYSTAL INGOT AND PRODUCTION METHOD THEREFOR 有权转让
标题翻译：用于生产SiC单晶晶片和工艺
公开(公告)号：EP2876190A4
公开(公告)日：2015-11-04
申请号：EP13820560
申请日：2013-05-08
申请人： TOYOTA MOTOR CO LTD , NIPPON STEEL & SUMITOMO METAL CORP
发明人： KADO MOTOHISA , DAIKOKU HIRONORI , SAKAMOTO HIDEMITSU , KUSUNOKI KAZUHIKO , OKADA NOBUHIRO
IPC分类号： C30B29/36 , C30B9/06 , C30B17/00 , C30B19/04 , C30B19/06 , C30B19/10
CPC分类号： C30B19/10 , C30B9/06 , C30B17/00 , C30B19/04 , C30B19/062 , C30B19/068 , C30B29/36 , Y10T117/1008 , Y10T428/21 , Y10T428/24488
摘要： Provided are: a high-quality SiC single crystal ingot that suppresses the generation of inclusions; and a production method for said SiC single crystal ingot. The present invention pertains to a SiC single crystal ingot including a seed crystal substrate and a SiC growth crystal grown using the solution method and using the seed crystal substrate as the origin thereof, said growth crystal having a recessed crystal growth surface and not including inclusions.

6. 发明公开

EP3051009A4 SiC MONOCRYSTAL AND METHOD FOR PRODUCING SAME 有权转让
标题翻译： SiC单晶和方法及其生产
公开(公告)号：EP3051009A4
公开(公告)日：2016-10-05
申请号：EP14847080
申请日：2014-08-27
申请人： TOYOTA MOTOR CO LTD , NIPPON STEEL & SUMITOMO METAL CORP
发明人： DAIKOKU HIRONORI , KADO MOTOHISA , KAMEI KAZUHITO , KUSUNOKI KAZUHIKO
IPC分类号： C30B29/36 , C30B9/10 , C30B19/02 , C30B19/06 , C30B19/08 , C30B19/10 , C30B19/12
CPC分类号： C30B19/10 , C30B9/10 , C30B19/02 , C30B19/062 , C30B19/068 , C30B19/08 , C30B19/12 , C30B29/36 , H01L21/02529 , H01L21/02598 , H01L21/02609 , H01L21/02628 , H01L29/045 , H01L29/1608

7. 发明公开

EP2876189A4 APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL AND METHOD FOR PRODUCING SiC SINGLE CRYSTAL 失效转让
标题翻译：设备用于生产单晶硅和方法生产的单晶硅
公开(公告)号：EP2876189A4
公开(公告)日：2016-03-09
申请号：EP13819242
申请日：2013-07-10
申请人： NIPPON STEEL & SUMITOMO METAL CORP , TOYOTA MOTOR CO LTD
发明人： OKADA NOBUHIRO , KAMEI KAZUHITO , KUSUNOKI KAZUHIKO , YASHIRO NOBUYOSHI , MORIGUCHI KOJI , DAIKOKU HIRONORI , KADO MOTOHISA , SAKAMOTO HIDEMITSU
IPC分类号： C30B29/36 , C30B15/32 , C30B19/06
CPC分类号： C30B15/32 , C30B9/06 , C30B15/30 , C30B19/068 , C30B29/36 , Y10T117/1024 , Y10T117/1032
摘要： An apparatus (10) for producing an SiC single crystal is used in the solution growth method. The apparatus (10) for producing an SiC single crystal includes a seed shaft (28) and a crucible (14). The seed shaft (28) has a lower end surface (28S) to which an SiC seed crystal (32) is to be attached. The crucible (14) holds an Si-C solution (15). The seed shaft (28) includes a cylinder part (28A), a bottom part (28B), and a low heat conductive member (28C). The bottom part (28B) is located at the lower end of the cylinder part (28A) and has the lower end surface (28S). The low heat conductive member (28C) is arranged on the upper surface of the bottom part (28B) and has a thermal conductivity lower than that of the bottom part (28B). This production apparatus can make the temperature within the crystal growth surface of the SiC seed crystal less liable to vary.

8. 发明公开

EP2722422A4 APPARATUS FOR PRODUCING SIC SINGLE CRYSTAL BY SOLUTION GROWTH METHOD, METHOD FOR PRODUCING SIC SINGLE CRYSTAL USING APPARATUS FOR PRODUCING SIC SINGLE CRYSTAL BY SOLUTION GROWTH METHOD, AND CRUCIBLE USED IN APPARATUS FOR PRODUCING SIC SINGLE CRYSTAL BY SOLUTION GROWTH METHOD 有权
标题翻译：设备用于生产单晶碳化硅通过溶液生长法，法生产SIC单晶与设备用于生产单晶碳化硅通过溶液生长法和设备中用于生产单晶碳化硅通过溶液生长法坩埚残骸的
公开(公告)号：EP2722422A4
公开(公告)日：2014-06-04
申请号：EP12802264
申请日：2012-06-11
申请人： NIPPON STEEL & SUMITOMO METAL CORP , TOYOTA MOTOR CO LTD
发明人： KAMEI KAZUHITO , KUSUNOKI KAZUHIKO , YASHIRO NOBUYOSHI , OKADA NOBUHIRO , DAIKOKU HIRONORI , KADO MOTOHISA , SAKAMOTO HIDEMITSU
IPC分类号： C30B29/36 , C30B19/06
CPC分类号： C30B15/10 , C30B17/00 , C30B19/02 , C30B19/08 , C30B29/36 , C30B35/00 , Y10T117/1032

9. 发明公开

EP2660368A4 APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL AND METHOD FOR PRODUCING SiC SINGLE CRYSTAL 有权
标题翻译：设备用于生产单晶硅和方法生产的单晶硅
公开(公告)号：EP2660368A4
公开(公告)日：2014-05-14
申请号：EP11854203
申请日：2011-12-26
申请人： NIPPON STEEL & SUMITOMO METAL CORP , TOYOTA MOTOR CO LTD
发明人： OKADA NOBUHIRO , KAMEI KAZUHITO , KUSUNOKI KAZUHIKO , YASHIRO NOBUYOSHI , MORIGUCHI KOUJI , DAIKOKU HIRONORI , SUZUKI HIROSHI , ISHII TOMOKAZU , SAKAMOTO HIDEMITSU , KADO MOTOHISA , KAWAI YOICHIRO
IPC分类号： C30B29/36 , C30B15/00
CPC分类号： C30B15/20 , C30B15/14 , C30B15/30 , C30B15/305 , C30B17/00 , C30B29/36 , Y10T117/1068
摘要： A manufacturing apparatus of a SiC single crystal which facilitates feeding of carbon to the vicinity of a SiC seed crystal. A control unit controls a induction heating unit such that frequency f (Hz) of alternating current to be passed to the induction heating unit satisfies Formula (1), where D1 (mm) indicates a permeation depth of electromagnetic waves into a side wall of a crucible by the induction heating unit, D2 (mm) indicates a permeation depth of electromagnetic waves into a SiC solution, T (mm) indicates a thickness of the side wall of the crucible, and R (mm) indicates an inner radius of the crucible: D �¢ 1 - T × D �¢ 2 / R > 1 where, D1 is defined by Formula (2), and D2 by Formula (3): D �¢ 1 = 503292 × 1 / f × Ãc × ¼c 1 / 2 D �¢ 2 = 503292 × 1 / f × Ãs × ¼s 1 / 2 where, Ãc is an electric conductivity (S/m) of the sidewall, and Ãs is an electric conductivity (S/m) of the SiC solution; µc is a relative permeability (dimensionless quantity) of the sidewall, and µs is a relative permeability (dimensionless quantity) of the SiC solution.
摘要翻译：的SiC单晶的制造装置便于碳的馈送到SiC晶种的附近。控制单元控制检查的感应加热单元做交流电流被传递到感应加热单元SATIS外资企业式频率f（Hz）（1），其中D1（毫米）表示电磁波的渗透深度成的侧壁坩埚由感应加热单元中，D2（毫米）表示电磁波的渗透深度成SiC溶液，T（毫米）表示的厚度在坩埚的侧壁的，和R（毫米）表示坩埚的内半径：D¢1 - D×ð¢2 / R> 1，其中，D1是由式（2）中所定义，和D2式（3）：D¢1 = 503×292的1 / f×AC×1个¼c / 2个D¢2 = 503×292的1 / f×为×¼s1/2其中，Ac为所述侧壁的导电率（S / m）的，并且如在SiC溶液的电导率（S / m）的 ; .mu.c是所述侧壁的相对磁导率（无量纲的量），和微秒是SiC溶液的相对磁导率（无量纲的量）。

10. 发明公开

EP2639344A4 METHOD FOR PRODUCING n-TYPE SiC MONOCRYSTAL 有权
标题翻译：方法生产N-掺杂SIC MONO晶体
公开(公告)号：EP2639344A4
公开(公告)日：2014-06-25
申请号：EP11840494
申请日：2011-11-04
申请人： NIPPON STEEL & SUMITOMO METAL CORP
发明人： KUSUNOKI KAZUHIKO , KAMEI KAZUHITO , YASHIRO NOBUYOSHI , MORIGUCHI KOUJI , OKADA NOBUHIRO , DANNO KATSUNORI , DAIKOKU HIRONORI
IPC分类号： C30B29/36 , C30B19/00
CPC分类号： C30B15/20 , C30B15/10 , C30B15/30 , C30B15/36 , C30B17/00 , C30B19/02 , C30B29/36

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