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1. 发明公开

EP1655772A4 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND GAS FOR PLASMA CVD 有权
标题翻译：半导体元件，方法的半导体元件和等离子体CVD
公开(公告)号：EP1655772A4
公开(公告)日：2007-12-26
申请号：EP04771570
申请日：2004-08-12
申请人： TOKYO ELECTRON LTD , ZEON CORP , OHMI TADAHIRO
发明人： KOBAYASHI YASUO , KAWAMURA KOHEI , OHMI TADAHIRO , TERANOTO AKINOBU , SUGIMOTO TATSUYA , YAMADA TOSHIRO , TANAKA KIMIAKI
IPC分类号： H01L21/314
CPC分类号： H01L21/3127 , H01L21/0212 , H01L21/02274 , H01L21/3146
摘要： A semiconductor device having an insulating film comprising a fluorine-doped carbon film having experienced a thermal history under a temperature of 420°C or less, characterized in that the fluorine-doped carbon film has a hydrogen atom content of 3 atomic % or less before the experience of the thermal history.

2. 发明公开

EP1453082A4 GAS FOR PLASMA REACTION, PROCESS FOR PRODUCING THE SAME, AND USE 审中-公开
标题翻译：气体等离子体反应工艺气体和使用生产
公开(公告)号：EP1453082A4
公开(公告)日：2007-10-17
申请号：EP02775447
申请日：2002-10-31
申请人： ZEON CORP
发明人： SUGAWARA MITSURU , YAMADA TOSHIRO , SUGIMOTO TATSUYA , TANAKA KIMIAKI
IPC分类号： H01L25/00 , C07C17/25 , C07C21/22 , C23C16/00 , H01L21/3065 , H01L21/311
CPC分类号： C07C21/22 , C07C17/25 , C23C16/26 , C23C16/30 , C23F4/00 , H01L21/3065 , H01L21/31116
摘要： A gas for plasma reaction which comprises a C5-6 chain perfluoroalkyne, preferably perfluoro-2-pentyne. This gas is suitable for use in the formation of a fine pattern by dry etching, formation of a thin film by CVD, or ashing. It is synthesized by contacting a dihydrofluoroalkane compound or monohydrofluoroalkene compound with a basic compound.

3. 发明公开

EP1760769A4 DRY ETCHING GASES AND METHOD OF DRY ETCHING 审中-公开
标题翻译： TROCKENÄTZGASEUND VERFAHREN ZUMTROCKENÄTZEN
公开(公告)号：EP1760769A4
公开(公告)日：2009-05-13
申请号：EP05743293
申请日：2005-05-30
申请人： NAT INST OF ADVANCED IND SCIEN , ZEON CORP
发明人： SEKIYA A , SUGIMOTO TATSUYA , YAMADA TOSHIRO , MASE TAKANOBU
IPC分类号： H01L21/311 , C07C41/18 , C07C43/17 , C07C45/51 , C07C45/67 , C07C45/82 , C07C49/227 , C07F9/535 , H01L21/3065
CPC分类号： H01L21/31116 , C07C41/18 , C07C43/17 , C07C45/513 , C07C45/673 , C07C45/82 , C07C49/227 , C07C2601/04 , C07F9/5352 , Y10T428/24479 , C07C49/687
摘要： A dry etching gas comprising a C4-6 fluorine compound which has an ether bond or carbonyl group and one or more fluorine atoms in the molecule and is constituted only of carbon, fluorine, and oxygen atoms and in which the ratio of the number of fluorine atoms to the number of carbon atoms (F/C) is 1.9 or lower (provided that the compound is neither a fluorine compound having one cyclic ether bond and one carbon-carbon double bond nor a saturated fluorine compound having one carbonyl group); a mixed dry etching gas comprising the dry etching gas and at least one gas selected from the group consisting of rare gases, O2, O3, CO, CO2, CHF3, CH2F2, CF4, C2F6, and C3F8; and a method of dry etching which comprises converting either of these dry etching gases into a plasma and processing a semiconductor material with the plasma. The dry etching gases can be safely used, are reduced in influence on the global environment, and can highly selectively dry-etch a semiconductor material at a high dry etching rate to form a satisfactory pattern shape. The dry etching method employs either of these dry etching gases.
摘要翻译：一种干蚀刻气体，其包含在分子中具有醚键或羰基和一个或多个氟原子并且仅由碳，氟和氧原子构成的C 4-6氟化合物，其中，氟原子数相对于碳原子数（F / C）为1.9以下（条件是该化合物既不是具有一个环状醚键的氟化合物，也不是一个碳 - 碳双键，也不是具有一个羰基的饱和氟化合物）。包括干蚀刻气体和选自由稀有气体O 2，O 3，CO，CO 2，CHF 3，CH 2 F 2，CF 4，C 2 F 6组成的组中的至少一种气体的混合干蚀刻气体，和C 3 F 8; 以及干蚀刻方法，其包括将这些干蚀刻气体中的任一种转变成等离子体并用等离子体处理半导体材料。可以安全地使用干蚀刻气体，减少对全局环境的影响，并且可以以高干蚀刻速率高度选择性地干蚀刻半导体材料以形成令人满意的图案形状。干蚀刻方法采用这些干蚀刻气体中的任一种。

4. 发明公开

EP1542268A4 METHOD OF DRY ETCHING, DRY ETCHING GAS AND PROCESS FOR PRODUCING PERFLUORO-2-PENTYNE 审中-公开
标题翻译：法干法蚀刻，用于生产全氟-2-戊炔干蚀刻AND PROCESS
公开(公告)号：EP1542268A4
公开(公告)日：2007-01-31
申请号：EP03764209
申请日：2003-07-16
申请人： ZEON CORP
发明人： YAMADA TOSHIRO , SUGIMOTO TATSUYA
IPC分类号： C07C17/25 , C03C25/68 , C07C17/26 , C07C21/18 , C07C21/22 , H01L21/3065 , H01L21/311 , H01L21/3213
CPC分类号： H01L21/32136 , C07C17/25 , C07C17/2637 , C07C21/18 , C07C21/22 , H01L21/31116
摘要： A method of dry etching, comprising exposing a resist film to radiation of 195 nm or less wavelength so as to form a resist pattern of 200 nm or less minimum line width and subjecting the resist pattern to dry etching using a fluorinated compound of C4-C6 having at least one unsaturated bond as an etching gas. Perfluoro-2-pentyne, perfluoro-2-butyne, nonafluoro-2-pentene and perfluoro-2-pentene are preferably used as the fluorinated compound. Perfluoro-2-pentyne can be synthesized by reacting a 1,1,1-trihalo-2,2,2-trifluoroethane with pentafluoropropylene aldehyde into a 2-halo-1,1,1,4,4,5,5,5-octafluoro-2-pentene and eliminating a hydrogen halide from this 2-pentene.

5. 发明公开

EP1535917A4 2-OXABICYCLO 3.3.0 OCTANE COMPOUNDS, PROCESS FOR PRODUCING THE SAME, OPTICAL RESOLVER, METHOD OF SEPARATING DIASTEREOMER MIXTURE, AND METHOD OF OPTICALLY RESOLVING ALCOHOL 审中-公开
标题翻译： 2-氧杂二环[3.3.0辛烷化合物，METHOD FOR THEIR，用于外消旋体拆分，METHOD FOR分离的混合物非对映体，AND METHOD FOR醇的外消旋物
公开(公告)号：EP1535917A4
公开(公告)日：2005-08-31
申请号：EP03792802
申请日：2003-08-22
申请人： ZEON CORP
发明人： SAKAMOTO KEI , NAKANO YASUYUKI , KONDOU YOSHIHISA , YAMADA TOSHIRO , NEMOTO HISAO
IPC分类号： C07D307/935 , C07B57/00 , C07C29/74 , C07C31/125 , C07M7/00
CPC分类号： C07D307/935 , C07B2200/07 , Y02P20/582
摘要： 2-Oxabicyclo[3.3.0]octane compounds represented by the following formula (1) (compound (1)); an optical resolver comprising at least one of the compounds (1); a process for producing the compounds (1) which comprises reacting a compound (2) or compound (3) with an alcohol (5) in the presence of an acid catalyst; a method of separating a diastereomer mixture of a compound (1); and a method of optically resolving an alcohol with the optical resolver. (2) + (5) → (1) (3) [In the formulae, R1 to R10 each represents hydrogen, etc.; R11 represents alkyl, etc.; R12 represents a hydrocarbon group, etc.; R13 represents a hydrocarbon group, etc.; and A represents acetyl, etc.]

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