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1. 发明公开

EP1760769A4 DRY ETCHING GASES AND METHOD OF DRY ETCHING 审中-公开
标题翻译： TROCKENÄTZGASEUND VERFAHREN ZUMTROCKENÄTZEN
公开(公告)号：EP1760769A4
公开(公告)日：2009-05-13
申请号：EP05743293
申请日：2005-05-30
申请人： NAT INST OF ADVANCED IND SCIEN , ZEON CORP
发明人： SEKIYA A , SUGIMOTO TATSUYA , YAMADA TOSHIRO , MASE TAKANOBU
IPC分类号： H01L21/311 , C07C41/18 , C07C43/17 , C07C45/51 , C07C45/67 , C07C45/82 , C07C49/227 , C07F9/535 , H01L21/3065
CPC分类号： H01L21/31116 , C07C41/18 , C07C43/17 , C07C45/513 , C07C45/673 , C07C45/82 , C07C49/227 , C07C2601/04 , C07F9/5352 , Y10T428/24479 , C07C49/687
摘要： A dry etching gas comprising a C4-6 fluorine compound which has an ether bond or carbonyl group and one or more fluorine atoms in the molecule and is constituted only of carbon, fluorine, and oxygen atoms and in which the ratio of the number of fluorine atoms to the number of carbon atoms (F/C) is 1.9 or lower (provided that the compound is neither a fluorine compound having one cyclic ether bond and one carbon-carbon double bond nor a saturated fluorine compound having one carbonyl group); a mixed dry etching gas comprising the dry etching gas and at least one gas selected from the group consisting of rare gases, O2, O3, CO, CO2, CHF3, CH2F2, CF4, C2F6, and C3F8; and a method of dry etching which comprises converting either of these dry etching gases into a plasma and processing a semiconductor material with the plasma. The dry etching gases can be safely used, are reduced in influence on the global environment, and can highly selectively dry-etch a semiconductor material at a high dry etching rate to form a satisfactory pattern shape. The dry etching method employs either of these dry etching gases.
摘要翻译：一种干蚀刻气体，其包含在分子中具有醚键或羰基和一个或多个氟原子并且仅由碳，氟和氧原子构成的C 4-6氟化合物，其中，氟原子数相对于碳原子数（F / C）为1.9以下（条件是该化合物既不是具有一个环状醚键的氟化合物，也不是一个碳 - 碳双键，也不是具有一个羰基的饱和氟化合物）。包括干蚀刻气体和选自由稀有气体O 2，O 3，CO，CO 2，CHF 3，CH 2 F 2，CF 4，C 2 F 6组成的组中的至少一种气体的混合干蚀刻气体，和C 3 F 8; 以及干蚀刻方法，其包括将这些干蚀刻气体中的任一种转变成等离子体并用等离子体处理半导体材料。可以安全地使用干蚀刻气体，减少对全局环境的影响，并且可以以高干蚀刻速率高度选择性地干蚀刻半导体材料以形成令人满意的图案形状。干蚀刻方法采用这些干蚀刻气体中的任一种。

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