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1. 发明公开

EP1429376A4 METHOD AND APPARATUS FOR PROCESSING ORGANOSILOXANE FILM 审中-公开
标题翻译：方法和装置处理的有机硅氧烷
公开(公告)号：EP1429376A4
公开(公告)日：2010-02-24
申请号：EP02762905
申请日：2002-08-29
申请人： TOKYO ELECTRON LTD , JSR CORP
发明人： HISHIYA SHINGO , SANO TETSUYA , SEKIGUCHI MANABU , MITA MICHIHIRO
IPC分类号： H01L21/768 , H01L21/31 , H01L21/3105 , H01L21/312 , H01L21/316 , H01L23/522
CPC分类号： H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/31058 , H01L21/3122

2. 发明公开

EP1351283A4 METHOD AND APPARATUS FOR TREATING ARTICLE TO BE TREATED 审中-公开
标题翻译：用于治疗制品的方法和设备来经处理
公开(公告)号：EP1351283A4
公开(公告)日：2006-01-25
申请号：EP01999967
申请日：2001-12-04
申请人： TOKYO ELECTRON LTD
发明人： HISHIYA SHINGO , FURUSAWA YOSHIKAZU , HAYASHI TERUYUKI , SAITO MISAKO , UMEZAWA KOTA , SATO SYOICHI
IPC分类号： C30B33/00 , H01L21/00 , H01L21/306 , H01L21/311 , H01L21/316
CPC分类号： H01L21/02046 , C30B33/00 , H01L21/02238 , H01L21/02255 , H01L21/02301 , H01L21/02312 , H01L21/31138 , H01L21/31662 , H01L21/67109
摘要： An apparatus (1) for treating a wafer, which has a heater (12), a reaction tube (2) for storing a wafer (10) having an organic material adhered thereto and, a first gas conduit (13) and a second gas conduit (14) for feeding an oxygen gas and a hydrogen gas, respectively, into the reaction tube (2); and a method for treating a wafer to be treated, which comprises feeding an oxygen gas and a hydrogen gas through the first gas conduit (13) and the second gas conduit (14), respectively, into the reaction tube (2), and heating the reaction tube (2) by the heater (12) to a temperature sufficient for activating the oxygen gas and hydrogen gas, to thereby allow a combustion reaction to take place and oxidize, decompose and remove the organic material adhered to the wafer (10).

3. 发明公开

EP1372189A4 OXIDE FILM FORMING METHOD 审中-公开
标题翻译： OXIDFILMAUSBILDUNGSVERFAHREN
公开(公告)号：EP1372189A4
公开(公告)日：2005-12-28
申请号：EP02701646
申请日：2002-02-28
申请人： TOKYO ELECTRON LTD
发明人： HISHIYA SHINGO , AKIYAMA KOJI , FURUSAWA YOSHIKAZU , AOKI KIMIYA
IPC分类号： H01L29/78 , H01L21/316
CPC分类号： H01L21/02238 , H01L21/02255 , H01L21/02299 , H01L21/31658 , H01L21/31662 , Y10S438/909
摘要： An oxide film forming method capable of advantageously forming a quality oxide film high in film thickness and film quality uniformity over the entire wafer, the method comprising a pre-treating process of oxidizing, by activated oxidizing species or atmosphere containing activated oxidizing species under a depressurized condition, a wafer disposed in a reaction container to form a protection oxide film on the surface of the wafer, and an oxide film forming process of oxidizing the wafer under a depressurized condition at a specified temperature to form an oxide film. The oxide film forming process is preferably performed continuously from the pre-treating process in the reaction container in which the pre-treating process is carried out. The pre-treating process is preferably carried out at temperatures lower than those in the oxide film forming process, and under depressurized conditions higher in level of depressurization than those in the oxide film forming process. This oxide film forming method can form a quality gate insulating film for a transistor element.
摘要翻译：一种氧化膜形成方法，其能够有利地在整个晶片上形成膜厚和膜质均匀性良好的高质量氧化膜，所述方法包括在减压下通过活化的氧化种或含有活化的氧化种的气氛氧化的预处理过程放置在反应容器中以在晶片的表面上形成保护氧化物膜的晶片，以及在减压条件下在特定温度下氧化晶片以形成氧化物膜的氧化物膜形成处理。氧化膜形成工序优选从进行了前处理工序的反应容器内的前处理工序连续进行。预处理工艺优选在低于氧化膜形成工艺的温度下进行，并且在减压水平高于氧化膜形成工艺中的减压条件下进行。该氧化物膜形成方法可以形成用于晶体管元件的高质量栅极绝缘膜。

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