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1. 发明公开

EP4394882A2 SEMICONDUCTOR DEVICE 审中-实审
公开(公告)号：EP4394882A2
公开(公告)日：2024-07-03
申请号：EP23212494.1
申请日：2023-11-28
申请人： Shindengen Electric Manufacturing Co., Ltd.
发明人： SATO, Azusa , MATSUZAKI, Yoshifumi
IPC分类号： H01L29/06 , H01L29/32 , H01L29/861
CPC分类号： H01L29/8611 , H01L29/0619 , H01L29/32 , H01L29/0638
摘要： Provided is a semiconductor device that can minimize the increase of a recovery loss by increasing a breakdown strength thus obtaining a favorable recovery characteristic. A semiconductor device 100 includes, a semiconductor base body 110, an insulation layer 120 that has an opening 122, and a surface electrode 130. The semiconductor base body 110 includes a drift region 112, a p-type dopant region 113, and a peripheral dopant region 114. The p-type dopant region 114 has a high concentration region 115 that is formed in a region where the high concentration region 115 overlaps with the p-type dopant region 114. A plurality of recombination centers are formed in the semiconductor base body 110, an inner peripheral end of the peripheral dopant region 114 on the surface of the semiconductor base body 110 is positioned on an inner peripheral side of an end portion of the opening 122, and a length from the inner peripheral end of the peripheral dopant region 114 to the end portion of the opening 122 is 0.01 µm or more to 130 µm or less.

2. 发明公开

EP4394882A3 SEMICONDUCTOR DEVICE 审中-实审
公开(公告)号：EP4394882A3
公开(公告)日：2024-10-09
申请号：EP23212494.1
申请日：2023-11-28
申请人： Shindengen Electric Manufacturing Co., Ltd.
发明人： SATO, Azusa , MATSUZAKI, Yoshifumi
IPC分类号： H01L29/06 , H01L29/32 , H01L29/861
CPC分类号： H01L29/8611 , H01L29/0619 , H01L29/32 , H01L29/0638 , H01L29/7801 , H01L29/0684
摘要： Provided is a semiconductor device that can minimize the increase of a recovery loss by increasing a breakdown strength thus obtaining a favorable recovery characteristic. A semiconductor device 100 includes, a semiconductor base body 110, an insulation layer 120 that has an opening 122, and a surface electrode 130. The semiconductor base body 110 includes a drift region 112, a p-type dopant region 113, and a peripheral dopant region 114. The p-type dopant region 114 has a high concentration region 115 that is formed in a region where the high concentration region 115 overlaps with the p-type dopant region 114. A plurality of recombination centers are formed in the semiconductor base body 110, an inner peripheral end of the peripheral dopant region 114 on the surface of the semiconductor base body 110 is positioned on an inner peripheral side of an end portion of the opening 122, and a length from the inner peripheral end of the peripheral dopant region 114 to the end portion of the opening 122 is 0.01 µm or more to 130 µm or less.

3. 发明授权

EP2871679B1 SEMICONDUCTOR DEVICE 有权
公开(公告)号：EP2871679B1
公开(公告)日：2019-02-06
申请号：EP12880468.9
申请日：2012-07-03
申请人： Shindengen Electric Manufacturing Co., Ltd.
发明人： MATSUZAKI, Yoshifumi
IPC分类号： H01L21/329 , H01L29/872 , H01L29/36 , H01L29/06

4. 发明公开

EP2871679A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：EP2871679A1
公开(公告)日：2015-05-13
申请号：EP12880468.9
申请日：2012-07-03
申请人： Shindengen Electric Manufacturing Co., Ltd.
发明人： MATSUZAKI, Yoshifumi
IPC分类号： H01L29/47 , H01L29/872
CPC分类号： H01L29/36 , H01L21/221 , H01L21/2254 , H01L29/0619 , H01L29/167 , H01L29/32 , H01L29/66143 , H01L29/872
摘要： The semiconductor device 100 of the present invention includes: a semiconductor base body 110 having an n + -type semiconductor layer 112 and an n - -type semiconductor layer 114; p + -type diffusion regions 120 selectively formed on a surface of the n - -type semiconductor layer 114; and a barrier metal layer 130 formed on a surface of the n - -type semiconductor layer 114 and surfaces of p + -type diffusion regions 120, forming a Schottky junction between the barrier metal layer 130 and the n - -type semiconductor layer 114, and forming an ohmic junction between the barrier metal layer 130 and the p + -type diffusion regions 120, wherein platinum which is heavy metal is diffused into the semiconductor base body 110 such that a concentration of platinum becomes maximum in a surface of the n - -type semiconductor layer 114. The semiconductor device 100 of the present invention can lower a forward drop voltage VF or can shorten a reverse recovery time trr while maintaining a high reverse withstand voltage VR and a low leak current IR. Further, the semiconductor device 100 of the present invention can acquire an excellent soft recovery characteristic.
摘要翻译：本发明的半导体器件100包括：具有n +型半导体层112和n - 型半导体层114的半导体基体110; 选择性地形成在n - 型半导体层114的表面上的p +型扩散区120; 以及形成在n - 型半导体层114的表面和p +型扩散区120的表面上的阻挡金属层130，形成阻挡金属层130和n - 型半导体层114之间的肖特基结，以及在势垒金属层130和p +型扩散区120之间形成欧姆结，其中作为重金属的铂扩散到半导体基体110中，使得铂的浓度在n型表面中变得最大半导体层114.本发明的半导体器件100可以降低正向压降VF或缩短反向恢复时间trr，同时保持高反向耐压VR和低漏电流IR。此外，本发明的半导体器件100可以获得优异的软恢复特性。

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