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3. 发明公开

EP3136421A1 BONDED SOI WAFER MANUFACTURING METHOD 有权
标题翻译：结合SOI WAFER制造方法
公开(公告)号：EP3136421A1
公开(公告)日：2017-03-01
申请号：EP15783058.9
申请日：2015-03-04
申请人： Shin-Etsu Handotai Co., Ltd.
发明人： WAKABAYASHI, Taishi , MEGURO, Kenji , NAKANO, Masatake , YAGI, Shinichiro , YOSHIDA, Tomosuke
IPC分类号： H01L21/02 , H01L21/205 , H01L27/12
CPC分类号： H01L21/76256 , H01L21/02052 , H01L21/02164 , H01L21/02238 , H01L21/02307 , H01L21/02381 , H01L21/02428 , H01L21/02488 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L21/30625 , H01L21/32055 , H01L21/76254 , H01L27/12
摘要： The present invention is a method for manufacturing a bonded SOI wafer by bonding a bond wafer and a base wafer, each composed of a silicon single crystal, via an insulator film, including the steps of: depositing a polycrystalline silicon layer on the bonding surface side of the base wafer, polishing a surface of the polycrystalline silicon layer, forming the insulator film on the bonding surface of the bond wafer, bonding the polished surface of the polycrystalline silicon layer of the base wafer and the bond wafer via the insulator film, and thinning the bonded bond wafer to form an SOI layer; wherein, as the base wafer, a wafer having a resistivity of 100 Ω·cm or more is used, the step for depositing the polycrystalline silicon layer further includes a stage for previously forming an oxide film on the surface of the base wafer on which the polycrystalline silicon layer is deposited, and the polycrystalline silicon layer is deposited by two stages including a first growth performed at a first temperature of 1010°C or less and a second growth performed at a second temperature being higher than the first temperature to deposit the same thicker than in the first growth. As a result, it is possible to provide a method for manufacturing a bonded SOI wafer which can prevent single-crystallization of polycrystalline silicon while suppressing an increase of the warpage of a base wafer even when the polycrystalline silicon layer to function as a carrier trap layer is deposited sufficiently thick.
摘要翻译：本发明是一种制造键合SOI晶片的方法，该键合晶片和基础晶片均由硅单晶经由绝缘膜粘合，所述方法包括以下步骤：在键合表面侧上沉积多晶硅层抛光多晶硅层的表面，在结合晶片的结合表面上形成绝缘膜，通过绝缘膜结合基底晶片的多晶硅层的抛光表面和结合晶片，以及使接合的接合晶片变薄以形成SOI层; 其中，使用具有100Ω·cm以上的电阻率的晶片作为所述基底晶片，所述用于沉积所述多晶硅层的步骤还包括用于预先在所述基底晶片的表面上形成氧化物膜的台，沉积多晶硅层，并且通过包括在1010℃或更低的第一温度下执行的第一生长和在高于第一温度的第二温度下执行的第二生长两个阶段沉积多晶硅层，以沉积多晶硅层比第一次增长更厚。结果，可以提供一种用于制造键合SOI晶片的方法，该方法即使当用作载流子捕获层的多晶硅层起作用时也能够抑制多晶硅的单晶化，同时抑制基底晶片的翘曲增加沉积得足够厚。

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