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    • 1. 发明公开
    • METHOD FOR SEPARATING BONDED WAFER
    • EP4411787A1
    • 2024-08-07
    • EP22876187.0
    • 2022-09-27
    • Shin-Etsu Handotai Co., Ltd.SHIN-ETSU CHEMICAL CO., LTD.
    • ISHIZAKI, JunyaYAMADA, MasatoOGAWA, Yoshinori
    • H01L21/02
    • H01L21/02
    • The present invention is a method for separating a bonded wafer, the method comprises separating a support from a bonded wafer which comprises a device structure portion having two or more electrodes with different polarities on one side of an epitaxial functional layer, and the device structure portion being bonded to a support made of a foreign substrate using a curable bonding material, wherein, by irradiating the bonded wafer with a laser beam, the curable bonding material and/or at least a portion of the surface of the device structure portion that comes into contact with the curable bonding material absorb(s) the laser beam to decompose the curable bonding material and/or the surface of the device structure portion, and thus the device structure portion and the support are separated. As a result, it is provided a method for separating a bonded wafer with a high survival rate of device structure portion in the separation of a bonded wafer that is firmly bonded with a curable bonding material, as a bonded wafer, which has the device structure portion having two or more electrodes with different polarities on one surface of an epitaxial functional layer and the device structure portion is bonded to a support made of a foreign substrate with the curable bonding material.