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1. 发明授权

EP3112934B1 INORGANIC MATERIAL FILM, PHOTOMASK BLANK, AND METHOD FOR MANUFACTURING PHOTOMASK 有权
公开(公告)号：EP3112934B1
公开(公告)日：2020-01-29
申请号：EP16176476.6
申请日：2016-06-27
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： FUKAYA, Souichi , SASAMOTO, Kouhei , NAKAGAWA, Hideo
IPC分类号： G03F1/54 , G03F1/80

2. 发明授权

EP3045973B1 CONTAINER FOR STORING PHOTOMASK BLANKS 有权
标题翻译：用于存放照片底座的容器
公开(公告)号：EP3045973B1
公开(公告)日：2018-04-11
申请号：EP14844507.5
申请日：2014-07-24
申请人： Shin-Etsu Polymer Co. Ltd. , Shin-Etsu Chemical Co., Ltd.
发明人： SUZUKI, Tsutomu , OHORI, Shinichi , KOITABASHI, Ryuji , NAKAGAWA, Hideo , TAKASAKA, Takuro , KINOSHITA, Takahiro , FUKUDA, Hiroshi
IPC分类号： G03F1/66 , H01L21/673
CPC分类号： G03F1/66 , H01L21/67359 , H01L21/67393
摘要： The purpose of the present invention is to further reliably reduce the contamination of photomask blanks due to the adherence of the dust and particles generated during the storage, transportation, or operation of the container while suppressing the effect on a resist pattern, thereby improving the quality and yield of the photomask blanks. The present invention pertains to a container (1) for storing photomask blanks that stores, transports, or safeguards photomask blanks (2), wherein at least one of the components is constituted by a thermoplastic resin where the amount of caprolactam measured by the dynamic head space method when kept for 60 minutes at 40°C is 0.01 ppm or less n-decane conversion amount per resin weight, and the surface resistance value is no more than 1.0E + 13 ohms.

3. 发明公开

EP3112934A2 INORGANIC MATERIAL FILM, PHOTOMASK BLANK, AND METHOD FOR MANUFACTURING PHOTOMASK 有权
标题翻译： FOLIE AUS ANORGANISCHEM MATERIAL，FOTOMASKENROHLING UND VERFAHREN ZUR HERSTELLUNG EINER PHOTOMASKE
公开(公告)号：EP3112934A2
公开(公告)日：2017-01-04
申请号：EP16176476.6
申请日：2016-06-27
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： FUKAYA, Souichi , SASAMOTO, Kouhei , NAKAGAWA, Hideo
IPC分类号： G03F1/54
摘要： An inorganic material film containing tin within the concentration range of 0.1 atomic percent or higher but no higher than 11.5 atomic percent eliminates the problem in which tin localizes and forms into particles, with the result that these particles turn into defects in an optical film. An inorganic material film for a photomask blank according to the present invention film-formed by sputtering and composed of a chromium-containing material includes a light-shielding layer having electrical conductivity, wherein the light-shielding layer contains 0.1 atomic percent or higher but no higher than 11.5 atomic percent of tin and no higher than 15 atomic percent of oxygen. The lower limit of oxygen concentration is, for example, 3 atomic percent. The inorganic material film has electrical conductivity, which is preferably no higher than 5000 Ω/cm 2 when evaluated in terms of resistance values.
摘要翻译：含有浓度范围为0.1原子％以上且不高于11.5原子％的锡的无机材料膜消除了锡定位并形成颗粒的问题，结果是这些颗粒变成光学膜的缺陷。根据本发明的用于通过溅射成膜并由含铬材料构成的用于光掩模坯料的无机材料膜包括具有导电性的遮光层，其中遮光层包含0.1原子％以上但不含高于11.5原子％的锡和不高于15原子％的氧气。氧浓度的下限例如为3原子％。无机材料膜具有导电性，当根据电阻值进行评估时，其优选不高于5000Ω/ cm 2。

4. 发明公开

EP4270457A1 STAMP COMPONENT FOR TRANSFERRING MICROSTRUCTURE 审中-实审
公开(公告)号：EP4270457A1
公开(公告)日：2023-11-01
申请号：EP21910042.7
申请日：2021-11-16
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： NAKAGAWA, Hideo , OGAWA, Yoshinori , OZAI, Toshiyuki
IPC分类号： H01L21/677
摘要： The present invention is a microstructure-transfer stamp component including a substrate and a silicone-based rubber film formed on the substrate, wherein a surface of the silicone-based rubber film facing away from the substrate has one or more recesses each being closed except for a surface opening. This provides a microstructure-transfer stamp component that can optimize temporary adhesive strength of the surface of the silicone-based rubber film stamp in a short period of time.

5. 发明公开

EP3112934A3 INORGANIC MATERIAL FILM, PHOTOMASK BLANK, AND METHOD FOR MANUFACTURING PHOTOMASK 有权
标题翻译：无机材料膜，照相底片和制造照相底片的方法
公开(公告)号：EP3112934A3
公开(公告)日：2017-02-08
申请号：EP16176476.6
申请日：2016-06-27
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： FUKAYA, Souichi , SASAMOTO, Kouhei , NAKAGAWA, Hideo
IPC分类号： G03F1/54 , G03F1/80
摘要： An inorganic material film containing tin within the concentration range of 0.1 atomic percent or higher but no higher than 11.5 atomic percent eliminates the problem in which tin localizes and forms into particles, with the result that these particles turn into defects in an optical film. An inorganic material film for a photomask blank according to the present invention film-formed by sputtering and composed of a chromium-containing material includes a light-shielding layer having electrical conductivity, wherein the light-shielding layer contains 0.1 atomic percent or higher but no higher than 11.5 atomic percent of tin and no higher than 15 atomic percent of oxygen. The lower limit of oxygen concentration is, for example, 3 atomic percent. The inorganic material film has electrical conductivity, which is preferably no higher than 5000 Ω/cm 2 when evaluated in terms of resistance values.
摘要翻译：含有浓度范围为0.1原子％以上且11.5原子％以下的锡的无机材料膜消除了锡定位并形成粒子的问题，结果这些粒子在光学膜中变成缺陷。根据本发明的用于溅射成膜并且由含铬材料构成的用于光掩模坯料的无机材料膜包括具有导电性的遮光层，其中遮光层含有0.1原子％或更高，但不包含高于11.5原子百分比的锡和不高于15原子百分比的氧。氧浓度的下限例如为3原子％。无机材料膜具有导电率，当根据电阻值进行评估时，优选不高于5000Ω/ cm 2。

6. 发明公开

EP3045973A1 CONTAINER FOR STORING PHOTOMASK BLANKS 有权
标题翻译：的用于储存空白光掩模
公开(公告)号：EP3045973A1
公开(公告)日：2016-07-20
申请号：EP14844507.5
申请日：2014-07-24
申请人： Shin-Etsu Polymer Co. Ltd. , Shin-Etsu Chemical Co., Ltd.
发明人： SUZUKI, Tsutomu , OHORI, Shinichi , KOITABASHI, Ryuji , NAKAGAWA, Hideo , TAKASAKA, Takuro , KINOSHITA, Takahiro , FUKUDA, Hiroshi
IPC分类号： G03F1/66 , H01L21/673
CPC分类号： G03F1/66 , H01L21/67359 , H01L21/67393
摘要： The purpose of the present invention is to further reliably reduce the contamination of photomask blanks due to the adherence of the dust and particles generated during the storage, transportation, or operation of the container while suppressing the effect on a resist pattern, thereby improving the quality and yield of the photomask blanks. The present invention pertains to a container (1) for storing photomask blanks that stores, transports, or safeguards photomask blanks (2), wherein at least one of the components is constituted by a thermoplastic resin where the amount of caprolactam measured by the dynamic head space method when kept for 60 minutes at 40°C is 0.01 ppm or less n-decane conversion amount per resin weight, and the surface resistance value is no more than 1.0E + 13 ohms.

7. 发明公开

EP2645166A1 PHOTOMASK BLANK, PROCESS FOR PRODUCTION OF PHOTOMASK, AND CHROMIUM-CONTAINING MATERIAL FILM 有权
标题翻译： FERMOMASKENROHLING UND VERFAHREN ZUR HERSTELLUNG EINER FOTOMASKE
公开(公告)号：EP2645166A1
公开(公告)日：2013-10-02
申请号：EP11843140.2
申请日：2011-11-18
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： YOSHIKAWA, Hiroki , FUKAYA, Souichi , INAZUKI, Yukio , YAMAMOTO, Tsuneo , NAKAGAWA, Hideo
IPC分类号： G03F1/54 , C22C27/06 , C22C28/00 , C22C29/00 , C23C14/14
CPC分类号： G03F1/80 , B32B15/01 , C22C27/06 , C23C14/0641 , C23C14/0676 , G03F1/00 , G03F1/30 , G03F1/50 , G03F1/54
摘要： In the chromium-containing material film of the present invention, an element is added thereto and is capable of bringing a mixture of the element and the chromium into a liquid phase at a temperature of 400°C or lower. The use of such a chromium-containing material film as an optical film (e.g., a light-shielding film, an etching mask film, or an etching stopper film) of a photo mask blank can achieve an improvement in chlorine-dry etching while retaining the same optical characteristics and the like as those of the conventional chromium-containing material film, thereby increasing the patterning precision.
摘要翻译：在本发明的含铬材料膜中，添加元素，能够使元素和铬的混合物在400℃以下的温度下成为液相。使用这种含铬材料膜作为光掩模坯料的光学膜（例如遮光膜，蚀刻掩模膜或蚀刻阻挡膜）可以实现氯干蚀刻的改进，同时保持与常规的含铬材料膜相同的光学特性等，从而提高了图案形成精度。

8. 发明公开

EP4375312A1 SILICONE-BASED POLYMER COMPOUND AND SILICONE-BASED POLYMER MATERIAL 审中-实审
公开(公告)号：EP4375312A1
公开(公告)日：2024-05-29
申请号：EP22845976.4
申请日：2022-07-21
申请人： OSAKA UNIVERSITY , SHIN-ETSU CHEMICAL CO., LTD.
发明人： TAKASHIMA, Yoshinori , HARADA, Akira , OSAKI, Motofumi , PARK, Junsu , YOSHIDA, Daichi , NAKAGAWA, Hideo , IGARASHI, Minoru , KATO, Nobu , KAMEI, Masanao , OGURA, Kentaro
IPC分类号： C08G77/392 , C08K5/01 , C08L83/04
CPC分类号： C08K5/01 , C08L83/04 , C08G77/392
摘要： Provided are a novel silicone-based polymer compound with excellent mechanical properties and a silicone-based polymer material containing the silicone-based polymer compound. The silicone-based polymer compound of the present invention is a silicone-based polymer compound (H) having a polysiloxane backbone as the main chain, wherein the polysiloxane backbone has at least one host group in a side chain, and the host group is a monovalent group formed by removing one hydrogen atom or one hydroxy group from a cyclodextrin or a cyclodextrin derivative.

9. 发明公开

EP3926695A1 MICROSTRUCTURE TRANSFER DEVICE, STAMP HEAD UNIT, STAMP COMPONENT FOR MICROSTRUCTURE TRANSFER, AND METHOD FOR TRANSFERRING MICROSTRUCTURE INTEGRATED COMPONENT 审中-公开
公开(公告)号：EP3926695A1
公开(公告)日：2021-12-22
申请号：EP19914902.2
申请日：2019-12-10
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： NAKAGAWA, Hideo , OGAWA, Yoshinori , MATSUMOTO, Nobuaki , UEDA, Shuhei , OHORI, Keiji , OTAKE, Kohei
IPC分类号： H01L33/00 , H01L21/677
摘要： The present invention is a stamp head unit including: a stamp component including at least a silicone-based rubber film on a quartz glass substrate; a stamp-component-holding component including a surface having a hole for vacuum suction of a surface of the quartz glass substrate of the stamp component; and a tubular component having an evacuation suction hole connected to communicate with the hole for vacuum suction so as to maintain a vacuum, and being coupled and fixed with the stamp-component-holding component. This provides: a stamp component that can be fixed stably by a simple and convenient vacuum chuck system; a stamp head unit with which the stamp component can be replaced in a short time; and a microstructure-transfer apparatus provided with the stamp component and the stamp head unit.

10. 发明授权

EP2645166B1 PHOTOMASK BLANK AND PROCESS FOR PRODUCTION OF A PHOTOMASK 有权
标题翻译：光掩模坯料及其制造方法的光掩模
公开(公告)号：EP2645166B1
公开(公告)日：2016-01-13
申请号：EP11843140.2
申请日：2011-11-18
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： YOSHIKAWA, Hiroki , FUKAYA, Souichi , INAZUKI, Yukio , YAMAMOTO, Tsuneo , NAKAGAWA, Hideo
IPC分类号： G03F1/00 , G03F1/54 , C22C27/06 , C22C28/00 , C22C29/00 , C23C14/14 , G03F1/30 , C23C14/06 , G03F1/50 , G03F1/80
CPC分类号： G03F1/80 , B32B15/01 , C22C27/06 , C23C14/0641 , C23C14/0676 , G03F1/00 , G03F1/30 , G03F1/50 , G03F1/54

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