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1. 发明公开

EP1473736A2 Ferroelectric non-volatile memory device 审中-公开
标题翻译：说唱歌手Nichtflüchtigeferroelektrische Speicherannnung
公开(公告)号：EP1473736A2
公开(公告)日：2004-11-03
申请号：EP04017770.1
申请日：2000-05-03
申请人： Semiconductor Technology Academic Research Center
发明人： Ishiwara, Hiroshi
IPC分类号： G11C11/22
CPC分类号： G11C11/22 , G11C11/223
摘要： A ferroelectric non-volatile memory device comprising a MOS cell transistor (Q1), two ferroelectric capacitors (C A , C B ) each of which has one terminal connected to the gate electrode of the cell transistor (Q1) and has almost the same remanent polarization, and a selector transistor (Q2) connected to the other terminal of one ferroelectric capacitor C B , wherein data is stored by polarizing the ferroelectric thin films of the capacitors in opposite directions with respect to the gate electrode of the cell transistor (Q1).
摘要翻译：一种铁电非易失性存储器件，包括MOS单元晶体管（Q1），两个铁电电容器（CA，CB），每个具有一个端子连接到单元晶体管（Q1）的栅电极并具有几乎相同的剩余极化，以及连接到一个强电介质电容器CB的另一个端子的选择晶体管（Q2），其中通过相对于单元晶体管（Q1）的栅电极在相反方向使电容器的铁电薄膜偏振来存储数据。

2. 发明公开

EP1054406A3 Ferroelectric non-volatile memory device 有权
标题翻译：非易失性铁电存储器阵列
公开(公告)号：EP1054406A3
公开(公告)日：2001-01-17
申请号：EP00109433.3
申请日：2000-05-03
申请人： Semiconductor Technology Academic Research Center
发明人： Ishiwara, Hiroshi
IPC分类号： G11C11/22 , G11C27/02
CPC分类号： G11C11/22 , G11C11/223
摘要： A ferroelectric non-volatile memory device comprising a MOS cell transistor (Q1), two ferroelectric capacitors (C A , C B ) each of which has one terminal connected to the gate electrode of the cell transistor (Q1) and has almost the same remanent polarization, and a selector transistor (Q2) connected to the other terminal of one ferroelectric capacitor C B , wherein data is stored by polarizing the ferroelectric thin films of the capacitors in opposite directions with respect to the gate electrode of the cell transistor (Q1).

3. 发明公开

EP1054406A2 Ferroelectric non-volatile memory device 有权
标题翻译：说唱歌手Nichtflüchtigeferroelektrische Speicherannnung
公开(公告)号：EP1054406A2
公开(公告)日：2000-11-22
申请号：EP00109433.3
申请日：2000-05-03
申请人： Semiconductor Technology Academic Research Center
发明人： Ishiwara, Hiroshi
IPC分类号： G11C11/22
CPC分类号： G11C11/22 , G11C11/223
摘要： A ferroelectric non-volatile memory device comprising a MOS cell transistor (Q1), two ferroelectric capacitors (C A , C B ) each of which has one terminal connected to the gate electrode of the cell transistor (Q1) and has almost the same remanent polarization, and a selector transistor (Q2) connected to the other terminal of one ferroelectric capacitor C B , wherein data is stored by polarizing the ferroelectric thin films of the capacitors in opposite directions with respect to the gate electrode of the cell transistor (Q1).
摘要翻译：一种铁电非易失性存储器件，包括MOS单元晶体管（Q1），两个铁电电容器（CA，CB），每个具有一个端子连接到单元晶体管（Q1）的栅电极并具有几乎相同的剩余极化，以及连接到一个强电介质电容器CB的另一个端子的选择晶体管（Q2），其中通过相对于单元晶体管（Q1）的栅电极在相反方向使电容器的铁电薄膜偏振来存储数据。

4. 发明授权

EP0982779B1 Memory structure in ferroelectric nonvolatile memory and readout method therefor 有权
标题翻译：在强电介质非易失性存储器和相关的读出方法的存储器结构
公开(公告)号：EP0982779B1
公开(公告)日：2007-11-14
申请号：EP99116504.4
申请日：1999-08-23
申请人： Semiconductor Technology Academic Research Center
发明人： Ishiwara, Hiroshi
IPC分类号： H01L27/115 , G11C11/22
CPC分类号： H01L27/11502 , G11C11/223

5. 发明公开

EP0982779A3 Memory structure in ferroelectric nonvolatile memory and readout method therefor 有权
标题翻译： Speicherstruktur in ferroelektrischemnichtflüchtigenSpeicher unddiesbezüglicheAuslesemethode
公开(公告)号：EP0982779A3
公开(公告)日：2000-05-17
申请号：EP99116504.4
申请日：1999-08-23
申请人： Semiconductor Technology Academic Research Center
发明人： Ishiwara, Hiroshi
IPC分类号： H01L27/115 , G11C11/22
CPC分类号： H01L27/11502 , G11C11/223
摘要： Each of memory cells of a ferroelectric nonvolatile memory includes a MOS field effect transistor (Tr) and first and second ferroelectric capacitors (C B , C A ) whose remnant polarization amounts are substantially equal to each other. One-side electrodes of the first and second ferroelectric capacitors are connected to the gate electrode of the MOS field effect transistor. Information is stored by polarizing the thin ferroelectric films of the first and second ferroelectric capacitors in opposite directions to each other with respect to the gate electrode of the MOS field effect transistor. Information is read out by applying a positive voltage pulse to one of the other electrodes of the first and second ferroelectric capacitors while the other one of the other electrodes is kept in the electrically floating state. Further a negative voltage pulse having an absolute value smaller than the positive voltage pulse may be applied, if necessary.
摘要翻译：铁电非易失性存储器的每个存储单元包括MOS场效应晶体管（Tr）和剩余极化量彼此基本相等的第一和第二强电介质电容器（CB，CA）。第一和第二铁电电容器的单面电极连接到MOS场效应晶体管的栅电极。信息通过相对于MOS场效应晶体管的栅电极使彼此相反的方向偏振第一和第二强电介质电容器的薄铁酸薄膜来存储。通过将正电压脉冲施加到第一和第二铁电电容器的另一个电极而另一个电极保持在电浮动状态来读出信息。此外，如果需要，可以施加绝对值小于正电压脉冲的负电压脉冲。

6. 发明公开

EP1473736A3 Ferroelectric non-volatile memory device 审中-公开
标题翻译：非易失性铁电存储器阵列
公开(公告)号：EP1473736A3
公开(公告)日：2006-10-04
申请号：EP04017770.1
申请日：2000-05-03
申请人： Semiconductor Technology Academic Research Center
发明人： Ishiwara, Hiroshi
IPC分类号： G11C11/22 , G11C27/02
CPC分类号： G11C11/22 , G11C11/223
摘要： A ferroelectric non-volatile memory device comprising a MOS cell transistor (Q1), two ferroelectric capacitors (C A , C B ) each of which has one terminal connected to the gate electrode of the cell transistor (Q1) and has almost the same remanent polarization, and a selector transistor (Q2) connected to the other terminal of one ferroelectric capacitor C B , wherein data is stored by polarizing the ferroelectric thin films of the capacitors in opposite directions with respect to the gate electrode of the cell transistor (Q1).

7. 发明授权

EP1054406B1 Ferroelectric non-volatile memory device 有权
标题翻译：非易失性铁电存储器阵列
公开(公告)号：EP1054406B1
公开(公告)日：2005-04-06
申请号：EP00109433.3
申请日：2000-05-03
申请人： Semiconductor Technology Academic Research Center
发明人： Ishiwara, Hiroshi
IPC分类号： G11C11/22 , G11C27/02
CPC分类号： G11C11/22 , G11C11/223

8. 发明公开

EP0982779A2 Memory structure in ferroelectric nonvolatile memory and readout method therefor 有权
标题翻译：铁电非易失性存储器中的存储器结构及其读出方法
公开(公告)号：EP0982779A2
公开(公告)日：2000-03-01
申请号：EP99116504.4
申请日：1999-08-23
申请人： Semiconductor Technology Academic Research Center
发明人： Ishiwara, Hiroshi
IPC分类号： H01L27/115
CPC分类号： H01L27/11502 , G11C11/223
摘要： Each of memory cells of a ferroelectric nonvolatile memory includes a MOS field effect transistor (Tr) and first and second ferroelectric capacitors (C B , C A ) whose remnant polarization amounts are substantially equal to each other. One-side electrodes of the first and second ferroelectric capacitors are connected to the gate electrode of the MOS field effect transistor. Information is stored by polarizing the thin ferroelectric films of the first and second ferroelectric capacitors in opposite directions to each other with respect to the gate electrode of the MOS field effect transistor. Information is read out by applying a positive voltage pulse to one of the other electrodes of the first and second ferroelectric capacitors while the other one of the other electrodes is kept in the electrically floating state. Further a negative voltage pulse having an absolute value smaller than the positive voltage pulse may be applied, if necessary.
摘要翻译：铁电非易失性存储器的每个存储单元包括MOS场效应晶体管（Tr）和残余极化量彼此基本相等的第一和第二铁电电容器（CB，CA）。第一和第二铁电电容器的一侧电极连接到MOS场效应晶体管的栅极。通过使第一和第二铁电体电容器的薄铁电体膜相对于MOS场效应晶体管的栅电极在彼此相反的方向上极化来存储信息。通过向第一和第二铁电电容器的其中一个电极施加正电压脉冲而读出信息，而另一个电极保持电浮动状态。此外，如果需要，可以施加绝对值小于正电压脉冲的负电压脉冲。

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