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1. 发明公开

EP2262013A2 Nitride-based light emitting device and method of manufacturing the same 有权转让
标题翻译：维多利亚·祖尔·赫斯特隆
公开(公告)号：EP2262013A2
公开(公告)日：2010-12-15
申请号：EP10181626.2
申请日：2004-10-05
申请人： Samsung LED Co., Ltd. , Gwangju Institute of Science and Technology
发明人： Seong, Tae-yeon , Kim, Kyoung-kook , Song, June-o , Leem, Dong-seok
IPC分类号： H01L33/40 , H01L33/42
CPC分类号： H01L33/42 , H01L33/32 , H01L33/405 , H01L2933/0016
摘要： Provided are a nitride-based light emitting device and a method of manufacturing the same. The nitride-based light emitting device has a structure in which at least an n-cladding layer (130), an active layer (140), and a p-cladding layer (150) are sequentially formed on a substrate (110). The light emitting device further includes an ohmic contact layer (230) composed of a zinc (Zn)-containing oxide containing a p-type dopant formed on the p-cladding layer. The method of manufacturing the nitride-based light emitting device includes forming an ohmic contact layer composed of Zn-containing oxide containing a p-type dopant on the p-cladding layer, the ohmic contact layer being made and annealing the resultant structure. The nitride-based light emitting device and manufacturing method provide excellent I-V characteristics by improving ohmic contact with a p-cladding layer while significantly enhancing light emission efficiency of the device due to high light transmittance of a transparent electrode.
摘要翻译：提供一种氮化物系发光器件及其制造方法。氮化物系发光器件具有在衬底（110）上依次形成至少n包层（130），有源层（140）和p包层（150）的结构。该发光器件还包括由含有含锌（Zn）的氧化物构成的欧姆接触层（230），该氧化物含有形成在p包覆层上的p型掺杂剂，以及由至少一种元素组成的反射层（240）在欧姆接触层上形成的由Ag，Al，Zn，Mg，Ru，Ti，Rh，Cr和Pt组成的组。制造氮化物系发光器件的方法包括在p包层上形成由含有p型掺杂剂的含Zn氧化物构成的欧姆接触层，在欧姆接触层上形成至少一种元素的反射层由Ag，Al，Zn，Mg，Ru，Ti，Rh，Cr和Pt组成的组，并退火所得结构。氮化物系发光器件和制造方法通过改善与p型包层的欧姆接触而提供优异的I-V特性，同时由于反射型p电极的高反射率而显着提高了器件的发光效率。

2. 发明授权

EP2262013B1 Method of manufacturing a gallium nitride-based light emitting diode 有权转让
标题翻译：一种用于生产基于氮化镓的发光二极管的过程
公开(公告)号：EP2262013B1
公开(公告)日：2012-09-19
申请号：EP10181626.2
申请日：2004-10-05
申请人： Samsung LED Co., Ltd. , Gwangju Institute of Science and Technology
发明人： Seong, Tae-yeon , Kim, Kyoung-kook , Song, June-o , Leem, Dong-seok
IPC分类号： H01L33/40 , H01L33/32
CPC分类号： H01L33/42 , H01L33/32 , H01L33/405 , H01L2933/0016

3. 发明公开

EP2262013A3 Nitride-based light emitting device and method of manufacturing the same 有权转让
标题翻译：一种半导体发光器件，包括氮化物化合物和它的制备方法
公开(公告)号：EP2262013A3
公开(公告)日：2011-06-15
申请号：EP10181626.2
申请日：2004-10-05
申请人： Samsung LED Co., Ltd. , Gwangju Institute of Science and Technology
发明人： Seong, Tae-yeon , Kim, Kyoung-kook , Song, June-o , Leem, Dong-seok
IPC分类号： H01L33/40 , H01L33/32
CPC分类号： H01L33/42 , H01L33/32 , H01L33/405 , H01L2933/0016
摘要： Provided are a nitride-based light emitting device and a method of manufacturing the same. The nitride-based light emitting device has a structure in which at least an n-cladding layer (130), an active layer (140), and a p-cladding layer (150) are sequentially formed on a substrate (110). The light emitting device further includes an ohmic contact layer (230) composed of a zinc (Zn)-containing oxide containing a p-type dopant formed on the p-cladding layer and a reflective layer (240) composed of at least one element from the group consisting of Ag, Al, Zn, Mg, Ru, Ti, Rh, Cr and Pt formed on the ohmic contact layer. The method of manufacturing the nitride-based light emitting device includes forming an ohmic contact layer composed of Zn-containing oxide containing a p-type dopant on the p-cladding layer, forming a reflective layer on the ohmic contact layer from at least one element from the group consisting of Ag, Al, Zn, Mg, Ru, Ti, Rh, Cr and Pt and annealing the resultant structure. The nitride-based light emitting device and manufacturing method provide excellent I-V characteristics by improving ohmic contact with a p-cladding layer while significantly enhancing light emission efficiency of the device due to high light reflectance of the reflective p-electrode.

4. 发明公开

EP1513203A2 Semiconductor light emitting device and method of manufacturing the same 审中-公开
标题翻译： Lichtemittierende Halbleitervorrichtung und Herstellungsverfahrendafür
公开(公告)号：EP1513203A2
公开(公告)日：2005-03-09
申请号：EP04255416.2
申请日：2004-09-07
申请人： Samsung Electronics Co., Ltd. , Gwangju Institute of Science and Technology
发明人： Song, June-o , Seong, Tae-yeon , Leem, Dong-seok
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/32 , H01L33/42 , H01L2933/0016
摘要： A light emitting device and a method of manufacturing the same are provided. A light emitting device has a structure wherein a substrate (110), an n-type clad layer (130), a light emitting layer (140), a p-type clad layer (150), an ohmic contact layer (230), and a reflective layer (240) are successively stacked. The ohmic contact layer (30) is formed by adding an additional element to an indium oxide. According to the light emitting device and the method of manufacturing the same, the characteristics of ohmic contact with a p-type clad layer is improved, thus increasing the efficiency and yield of wire bonding during packaging FCLEDS. Also, it is possible to increase the light emitting efficiency and life span of light emitting devices due to the low contactless resistance and the excellent electric current and voltage characteristic.
摘要翻译：提供一种半导体发光器件及其制造方法。半导体发光器件具有其中衬底（110），n型覆盖层（130），发光层（140），p型覆盖层（150），欧姆接触层（230）和反射层（240）。欧姆接触层（30）通过向氧化铟添加附加元素而形成。根据半导体发光器件及其制造方法，改善了与p型覆盖层的欧姆接触的特性，从而提高了封装FCLEDS期间引线接合的效率和产量。此外，由于低的非接触电阻和优异的电流和电压特性，可以提高半导体发光器件的发光效率和寿命。

5. 发明公开

EP1513203A3 Semiconductor light emitting device and method of manufacturing the same 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：EP1513203A3
公开(公告)日：2006-11-29
申请号：EP04255416.2
申请日：2004-09-07
申请人： SAMSUNG ELECTRONICS CO., LTD. , Gwangju Institute of Science and Technology
发明人： Song, June-o , Seong, Tae-yeon , Leem, Dong-seok
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/32 , H01L33/42 , H01L2933/0016
摘要： A semiconductor light emitting device and a method of manufacturing the same are provided. A semiconductor light emitting device has a structure wherein a substrate (110), an n-type clad layer (130), a light emitting layer (140), a p-type clad layer (150), an ohmic contact layer (230), and a reflective layer (240) are successively stacked. The ohmic contact layer (30) is formed by adding an additional element to an indium oxide. According to the semiconductor light emitting device and the method of manufacturing the same, the characteristics of ohmic contact with a p-type clad layer is improved, thus increasing the efficiency and yield of wire bonding during packaging FCLEDS. Also, it is possible to increase the light emitting efficiency and life span of semiconductor light emitting devices due to the low contactless resistance and the excellent electric current and voltage characteristic.
摘要翻译：提供了一种半导体发光器件及其制造方法。（110），n型覆盖层（130），发光层（140），p型覆盖层（150），欧姆接触层（230），半导体发光元件和反射层（240）被连续堆叠。欧姆接触层（30）通过将附加元素添加到氧化铟来形成。根据半导体发光器件及其制造方法，与p型覆层的欧姆接触的特性得到改善，从而提高了封装FCLEDS期间引线键合的效率和产量。而且，由于低非接触电阻和优异的电流和电压特性，可以提高半导体发光器件的发光效率和寿命。

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