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1. 发明公开

EP1109215A2 Apparatus and method for solder bump inspection 审中-公开
标题翻译： Gerätund Methode zur Lotkugelinspektion
公开(公告)号：EP1109215A2
公开(公告)日：2001-06-20
申请号：EP00126574.3
申请日：2000-12-12
申请人： SHINKO ELECTRIC INDUSTRIES CO. LTD.
发明人： Murayama, Kei, Shinko Electric Ind. Co., Ltd. , Higashi, Mitsutoshi, Shinko Electric Ind. Co. Ltd.
IPC分类号： H01L21/66 , H01L21/60
CPC分类号： G01B11/0608 , H01L22/12 , H01L2224/11
摘要： A bump inspection apparatus for inspecting shapes of a plurality of bumps each having a planar top portion, on an inspection object, comprising an illumination optical system for illuminating the top portions with a vertical parallel pencil of light through a telecentric optical system, an observation optical system using a telecentric optical system having an optical axis thereof in conformity with that of the illumination optical system, an observation portion for observing the images of the top portions through the observation optical system in a predetermined range of the inspection object, and a processing portion for analyzing the shapes of the bumps on the basis of the images of the top portions by the observation portion, wherein the processing portion includes analyzing means for analyzing the areas of the planar top portions for the individual bumps and judging means for judging whether or not the rears of the top portions are within a predetermined range. A bump inspection method using this apparatus is described, too.
摘要翻译：一种用于检查在检查对象上具有平坦顶部的多个凸块的形状的凸块检查装置，包括：用于通过远心光学系统以垂直平行的光照射顶部的照明光学系统;观察光学使用具有与照明光学系统的光轴相一致的光轴的远心光学系统的系统，用于通过观察光学系统在检查对象的预定范围内观察顶部的图像的观察部分，以及处理部分用于通过观察部分基于顶部的图像来分析凸块的形状，其中处理部分包括用于分析用于各个凸块的平面顶部的区域的分析装置，以及用于判断各个凸起的判断装置顶部的凸起在预定范围内。还描述了使用该装置的凸块检查方法。

2. 发明授权

EP1267402B1 Semiconductor device and method of production of same 有权
标题翻译：半导体及其制备方法
公开(公告)号：EP1267402B1
公开(公告)日：2013-03-20
申请号：EP02291419.6
申请日：2002-06-07
申请人： SHINKO ELECTRIC INDUSTRIES CO. LTD.
发明人： Mashino, Naohiro, c/o Shinko Electric Ind. Co. Ltd , Higashi, Mitsutoshi, Shinko Electric Ind. Co. Ltd.
IPC分类号： H01L23/48 , H01L21/768 , H01L21/98 , H01L25/065
CPC分类号： H01L21/76898 , H01L23/481 , H01L25/0657 , H01L25/50 , H01L2224/02371 , H01L2224/05001 , H01L2224/05009 , H01L2224/05023 , H01L2224/05025 , H01L2224/0557 , H01L2224/06181 , H01L2224/13025 , H01L2224/16145 , H01L2225/06513 , H01L2225/06541 , H01L2924/10253 , H01L2924/1305 , H01L2924/00 , H01L2224/05647 , H01L2924/00014 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05171
摘要： A semiconductor device, enabling reliable electrical connection of a main electrode pad with an interconnection pattern without separate provision of a via use electrode pad in addition to the existing main electrode pad, provided with a silicon substrate (semiconductor substrate), an electronic element formation layer formed on one surface of that silicon substrate, an electrode pad having an extension and electrically connected to the electronic element formation layer, a through hole passing through the electrode pad and the silicon substrate, an SiO2 film (insulating film), a via hole provided in the SiO2 film on the extension of the electrode pad, and an interconnection pattern electrically leading out the electrode pad to the other surface of the silicon substrate through the through hole and via hole, said through hole having a diameter larger at a portion passing through the electrode pad than a portion passing through the semiconductor substrate.

4. 发明公开

EP1267401A3 Semiconductor device and method of production of same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：EP1267401A3
公开(公告)日：2005-09-28
申请号：EP02291418.8
申请日：2002-06-07
申请人： SHINKO ELECTRIC INDUSTRIES CO. LTD.
发明人： Mashino, Naohiro, Shinko Electric Ind. Co., Ltd. , Higashi, Mitsutoshi, Shinko Electric Ind. Co. Ltd.
IPC分类号： H01L23/48
CPC分类号： H01L25/0657 , H01L23/481 , H01L2224/05001 , H01L2224/05009 , H01L2224/05023 , H01L2224/05025 , H01L2224/0557 , H01L2224/06181 , H01L2224/13025 , H01L2224/16 , H01L2225/06513 , H01L2225/06541 , H01L2224/05647 , H01L2924/00014 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05171
摘要： A semiconductor device, enabling reliable electrical connection of a main electrode pad with an interconnection pattern without separate provision of a via use electrode pad in addition to the existing main electrode pad, provided with a silicon substrate (semiconductor substrate), an electronic element formation layer formed on one surface of that silicon substrate, an electrode pad electrically connected to the electronic element formation layer, a through hole passing through the electrode pad and the silicon substrate, an SiO 2 film (insulating film), a via hole provided in the SiO 2 film on the electrode pad along the opening rim of the through hole, and an interconnection pattern electrically leading out the electrode pad to the other surface of the silicon substrate through the through hole and via hole.
摘要翻译：本发明提供一种半导体装置，除了现有的主电极焊盘之外，不需另行设置通孔用电极焊盘，可实现主电极焊盘与布线图案的可靠的电连接，具备硅基板（半导体基板），电子元件形成层形成在该硅基板的一个表面上的电子元件形成层，电连接到电子元件形成层的电极焊盘，穿过电极焊盘和硅基板的通孔，SiO 2膜（绝缘膜），设置在SiO 2膜在沿着通孔的开口边缘的电极焊盘上，以及通过通孔和通孔将电极焊盘电气引出到硅基板的另一表面的互连图案。

5. 发明授权

EP0997939B1 Semiconductor device comprising a lead wire 有权
标题翻译：具有引线的半导体器件
公开(公告)号：EP0997939B1
公开(公告)日：2005-09-07
申请号：EP99308579.4
申请日：1999-10-29
申请人： SHINKO ELECTRIC INDUSTRIES CO. LTD.
发明人： Higashi, Mitsutoshi, Shinko Electric Ind. Co. Ltd. , Sakaguchi, Hideaki, Shinko Electric Ind. Co. Ltd. , Imai, Kazunari, Shinko Electric Ind. Co. Ltd. , Kyozuka, Masahiro, Shinko Electric Ind. Co. Ltd. , Shimizu, Mitsuharu, Shinko Electric Ind. Co. Ltd.
IPC分类号： H01L23/49 , H01L21/56 , H01L23/31
CPC分类号： H01L24/12 , H01L21/563 , H01L23/3171 , H01L24/05 , H01L24/11 , H01L24/45 , H01L2224/0231 , H01L2224/0401 , H01L2224/05599 , H01L2224/1134 , H01L2224/11822 , H01L2224/13017 , H01L2224/13022 , H01L2224/13099 , H01L2224/13144 , H01L2224/13582 , H01L2224/13655 , H01L2224/13664 , H01L2224/45144 , H01L2224/73203 , H01L2224/81011 , H01L2224/85148 , H01L2224/85399 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01022 , H01L2924/01027 , H01L2924/01028 , H01L2924/01033 , H01L2924/01046 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/351 , H01L2224/29099 , H01L2224/48 , H01L2924/00
摘要： A semiconductor device includes a semiconductor element (10) having an electrode formation surface on which an electrode terminal (14) and a re-wiring portion (18) are formed. The re-wiring portion (18) is electrically connected to the electrode terminal (14). An external terminal (12) made of wire has a base end connected to the re-wiring portion (18) and a distal end extending therefrom. An electrically insulating resin (30) covers the electrode formation surface in such a manner that at least the distal end of the external terminal (12) is exposed outside the insulating resin. During a fabricating process, the electrode formation surface is coated with an electrically insulating resin (30) and then a part of the electrically insulating resin is removed from the distal end (12a) of the external connecting terminal (12) to expose the same outside the insulating resin.

6. 发明公开

EP1267402A3 Semiconductor device and method of production of same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：EP1267402A3
公开(公告)日：2005-09-28
申请号：EP02291419.6
申请日：2002-06-07
申请人： SHINKO ELECTRIC INDUSTRIES CO. LTD.
发明人： Mashino, Naohiro, c/o Shinko Electric Ind. Co. Ltd , Higashi, Mitsutoshi, Shinko Electric Ind. Co. Ltd.
IPC分类号： H01L23/48
CPC分类号： H01L21/76898 , H01L23/481 , H01L25/0657 , H01L25/50 , H01L2224/02371 , H01L2224/05001 , H01L2224/05009 , H01L2224/05023 , H01L2224/05025 , H01L2224/0557 , H01L2224/06181 , H01L2224/13025 , H01L2224/16145 , H01L2225/06513 , H01L2225/06541 , H01L2924/10253 , H01L2924/1305 , H01L2924/00 , H01L2224/05647 , H01L2924/00014 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05171
摘要： A semiconductor device, enabling reliable electrical connection of a main electrode pad with an interconnection pattern without separate provision of a via use electrode pad in addition to the existing main electrode pad, provided with a silicon substrate (semiconductor substrate), an electronic element formation layer formed on one surface of that silicon substrate, an electrode pad having an extension and electrically connected to the electronic element formation layer, a through hole passing through the electrode pad and the silicon substrate, an SiO 2 film (insulating film), a via hole provided in the SiO 2 film on the extension of the electrode pad, and an interconnection pattern electrically leading out the electrode pad to the other surface of the silicon substrate through the through hole and via hole, said through hole having a diameter larger at a portion passing through the electrode pad than a portion passing through the semiconductor substrate.
摘要翻译：本发明提供一种半导体装置，除了现有的主电极焊盘之外，不需另行设置通孔用电极焊盘，可实现主电极焊盘与布线图案的可靠的电连接，具备硅基板（半导体基板），电子元件形成层在所述硅基板的一个表面上形成的电极焊盘，具有延伸部并电连接到所述电子元件形成层的电极焊盘，穿过所述电极焊盘和所述硅基板的通孔，设置有SiO2膜（绝缘膜）在所述电极焊盘的延长线上的SiO 2膜中，以及通过所述通孔和通孔将所述电极焊盘电连接到所述硅基板的另一个表面的互连图案，所述通孔的直径在穿过电极焊盘比穿过半导体衬底的部分。

7. 发明公开

EP1267402A2 Semiconductor device and method of production of same 有权
标题翻译： Halbleiter和seine Herstellung
公开(公告)号：EP1267402A2
公开(公告)日：2002-12-18
申请号：EP02291419.6
申请日：2002-06-07
申请人： SHINKO ELECTRIC INDUSTRIES CO. LTD.
发明人： Mashino, Naohiro, c/o Shinko Electric Ind. Co. Ltd , Higashi, Mitsutoshi, Shinko Electric Ind. Co. Ltd.
IPC分类号： H01L23/48
CPC分类号： H01L21/76898 , H01L23/481 , H01L25/0657 , H01L25/50 , H01L2224/02371 , H01L2224/05001 , H01L2224/05009 , H01L2224/05023 , H01L2224/05025 , H01L2224/0557 , H01L2224/06181 , H01L2224/13025 , H01L2224/16145 , H01L2225/06513 , H01L2225/06541 , H01L2924/10253 , H01L2924/1305 , H01L2924/00 , H01L2224/05647 , H01L2924/00014 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05171
摘要： A semiconductor device, enabling reliable electrical connection of a main electrode pad with an interconnection pattern without separate provision of a via use electrode pad in addition to the existing main electrode pad, provided with a silicon substrate (semiconductor substrate), an electronic element formation layer formed on one surface of that silicon substrate, an electrode pad having an extension and electrically connected to the electronic element formation layer, a through hole passing through the electrode pad and the silicon substrate, an SiO 2 film (insulating film), a via hole provided in the SiO 2 film on the extension of the electrode pad, and an interconnection pattern electrically leading out the electrode pad to the other surface of the silicon substrate through the through hole and via hole, said through hole having a diameter larger at a portion passing through the electrode pad than a portion passing through the semiconductor substrate.
摘要翻译：一种半导体器件，除了具有硅衬底（半导体衬底）的现有主电极焊盘之外，还能够将主电极焊盘与互连图案可靠地电连接，而不需要分开设置通孔使用电极焊盘，电子元件形成层形成在所述硅衬底的一个表面上，具有延伸并电连接到所述电子元件形成层的电极焊盘，穿过所述电极焊盘和所述硅衬底的通孔，SiO 2膜（绝缘膜），设置有通孔在电极焊盘的延伸部分上的SiO 2膜中，以及通过通孔和通孔将电极焊盘引导到硅衬底的另一个表面的互连图案，所述通孔的直径大于穿过电极焊盘比通过半导体衬底的部分。

8. 发明公开

EP1267401A2 Semiconductor device and method of production of same 审中-公开
标题翻译： Halbleiter和seine Herstellung
公开(公告)号：EP1267401A2
公开(公告)日：2002-12-18
申请号：EP02291418.8
申请日：2002-06-07
申请人： SHINKO ELECTRIC INDUSTRIES CO. LTD.
发明人： Mashino, Naohiro, Shinko Electric Ind. Co., Ltd. , Higashi, Mitsutoshi, Shinko Electric Ind. Co. Ltd.
IPC分类号： H01L23/48
CPC分类号： H01L25/0657 , H01L23/481 , H01L2224/05001 , H01L2224/05009 , H01L2224/05023 , H01L2224/05025 , H01L2224/0557 , H01L2224/06181 , H01L2224/13025 , H01L2224/16 , H01L2225/06513 , H01L2225/06541 , H01L2224/05647 , H01L2924/00014 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05171
摘要： A semiconductor device, enabling reliable electrical connection of a main electrode pad with an interconnection pattern without separate provision of a via use electrode pad in addition to the existing main electrode pad, provided with a silicon substrate (semiconductor substrate), an electronic element formation layer formed on one surface of that silicon substrate, an electrode pad electrically connected to the electronic element formation layer, a through hole passing through the electrode pad and the silicon substrate, an SiO 2 film (insulating film), a via hole provided in the SiO 2 film on the electrode pad along the opening rim of the through hole, and an interconnection pattern electrically leading out the electrode pad to the other surface of the silicon substrate through the through hole and via hole.
摘要翻译：一种半导体器件，除了具有硅衬底（半导体衬底）的现有主电极焊盘之外，还能够将主电极焊盘与互连图案可靠地电连接，而不需要分开设置通孔使用电极焊盘，电子元件形成层形成在该硅衬底的一个表面上，与电子元件形成层电连接的电极焊盘，穿过电极焊盘和硅衬底的通孔，SiO 2膜（绝缘膜），设置在SiO 2膜中的通孔在通孔的开口边缘处的电极焊盘上，以及通过通孔和通孔将电极焊盘引导到硅衬底的另一个表面的互连图案。

9. 发明公开

EP1077482A2 Semiconductor contacting device 审中-公开
标题翻译： Halbleiterkontakt
公开(公告)号：EP1077482A2
公开(公告)日：2001-02-21
申请号：EP00307040.6
申请日：2000-08-16
申请人： SHINKO ELECTRIC INDUSTRIES CO. LTD.
发明人： Higashi, Mitsutoshi, Shinko Electric Ind. Co. Ltd. , Sakaguchi, Hideaki, Shinko Electric Ind. Co. Ltd. , Murayama, Kei, c/o Shinko Electric Ind. Co. Ltd. , Koike, Hiroko, c/o Shinko Electric Ind. Co. Ltd.
IPC分类号： H01L21/48 , H01L23/498
CPC分类号： H01L24/11 , H01L21/4889 , H01L24/13 , H01L2224/11822 , H01L2224/1308 , H01L2224/13082 , H01L2224/131 , H01L2224/13144 , H01L2224/45144 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01027 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/09701 , H01L2924/351 , H05K3/3426 , H05K3/3484 , H05K2201/10287 , H05K2201/10848 , H05K2201/10984 , H05K2203/0338 , H01L2924/00014 , H01L2224/13099 , H01L2224/29099 , H01L2924/00
摘要： A process of producing a semiconductor device including a semiconductor chip (10), electrode terminals (12) formed on an electrode terminal carrying surface of the semiconductor chip (10), conductor wires (14) bonded to, and standing on, the electrode terminals (12), and solder bumps (38) formed on respective tips of the conductor wires (14), comprises the steps of: forming spots of a solder paste (32) corresponding in arrangement to the tips of the wires (14), on a substrate (30) less wettable by the solder than the wires (14); positioning the spots of the solder paste (32) with the tips of the wires (14); and, heating the spots of the solder paste (32) to form solder bumps (38) on the tips of the wires (14).
摘要翻译：一种制造半导体器件的方法，该半导体器件包括半导体芯片（10），形成在半导体芯片（10）的电极端子承载表面上的电极端子（12），接合并站立在该电极端子（12）和形成在导线（14）的各个尖端上的焊料凸块（38）包括以下步骤：在布线上形成与焊丝（14）的顶端对应的焊膏（32）的点，与所述电线（14）相比，焊料不易吸湿的基板（30）; 用焊丝（14）的尖端定位焊膏（32）的斑点; 并且加热焊膏（32）的斑点以在电线（14）的尖端上形成焊料凸块（38）。

10. 发明公开

EP0997939A1 Semiconductor device comprising a lead wire 有权
标题翻译： Halititeranordnung mit einem Leitungsdraht
公开(公告)号：EP0997939A1
公开(公告)日：2000-05-03
申请号：EP99308579.4
申请日：1999-10-29
申请人： SHINKO ELECTRIC INDUSTRIES CO. LTD.
发明人： Higashi, Mitsutoshi, Shinko Electric Ind. Co. Ltd. , Sakaguchi, Hideaki, Shinko Electric Ind. Co. Ltd. , Imai, Kazunari, Shinko Electric Ind. Co. Ltd. , Kyozuka, Masahiro, Shinko Electric Ind. Co. Ltd. , Shimizu, Mitsuharu, Shinko Electric Ind. Co. Ltd.
IPC分类号： H01L23/49 , H01L21/56 , H01L23/31
CPC分类号： H01L24/12 , H01L21/563 , H01L23/3171 , H01L24/05 , H01L24/11 , H01L24/45 , H01L2224/0231 , H01L2224/0401 , H01L2224/05599 , H01L2224/1134 , H01L2224/11822 , H01L2224/13017 , H01L2224/13022 , H01L2224/13099 , H01L2224/13144 , H01L2224/13582 , H01L2224/13655 , H01L2224/13664 , H01L2224/45144 , H01L2224/73203 , H01L2224/81011 , H01L2224/85148 , H01L2224/85399 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01022 , H01L2924/01027 , H01L2924/01028 , H01L2924/01033 , H01L2924/01046 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/351 , H01L2224/29099 , H01L2224/48 , H01L2924/00
摘要： A semiconductor device includes a semiconductor element (10) having an electrode formation surface on which an electrode terminal (14) and a re-wiring portion (18) are formed. The re-wiring portion (18) is electrically connected to the electrode terminal (14). An external terminal (12) made of wire has a base end connected to the re-wiring portion (18) and a distal end extending therefrom. An electrically insulating resin (30) covers the electrode formation surface in such a manner that at least the distal end of the external terminal (12) is exposed outside the insulating resin. During a fabricating process, the electrode formation surface is coated with an electrically insulating resin (30) and then a part of the electrically insulating resin is removed from the distal end (12a) of the external connecting terminal (12) to expose the same outside the insulating resin.
摘要翻译：半导体器件包括具有形成有电极端子（14）和再布线部（18）的电极形成面的半导体元件（10）。再布线部分（18）电连接到电极端子（14）。由导线制成的外部端子（12）具有连接到再布线部分（18）的基端和从其延伸的远端。绝缘树脂（30）以至少外部端子（12）的远端暴露在绝缘树脂外部的方式覆盖电极形成表面。在制造过程中，电极形成表面涂覆有电绝缘树脂（30），然后从外部连接端子（12）的远端（12a）去除一部分电绝缘树脂，以将其暴露在外部绝缘树脂。

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