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1. 发明公开

EP2698808A4 SILICON CARBIDE SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING SAME 有权
标题翻译：圣地亚哥州立大学哈佛大学
公开(公告)号：EP2698808A4
公开(公告)日：2015-02-18
申请号：EP11863270
申请日：2011-09-09
申请人： SHINDENGEN ELECTRIC MFG
发明人： OHNO JUN-ICHI
IPC分类号： H01L21/04 , H01L21/28 , H01L21/3065 , H01L29/66
CPC分类号： H01L21/76889 , H01L21/0485 , H01L21/0495 , H01L21/3065 , H01L23/4827 , H01L29/1608 , H01L29/45 , H01L29/6606 , H01L29/66143 , H01L29/8611 , H01L29/872 , H01L2924/0002 , H01L2924/00
摘要： A silicon carbide semiconductor device 100 of the present invention includes: a silicon carbide layer 110; a reaction layer 120 which is in contact with the silicon carbide layer 110; a conductive oxidation layer 130 which is in contact with the reaction layer 120; and an electrode layer 140 which is formed over the reaction layer 120 with the conductive oxidation layer 130 interposed therebetween. It is preferable that a thickness of the conductive oxidation layer 130 falls within a range of 0.3nm to 2.25nm. According to the silicon carbide semiconductor device 100 of the present invention, by forming the electrode layer 140 over the reaction layer 120 with the conductive oxidation layer 130 interposed therebetween instead of directly forming the electrode layer 140 on the reaction layer 120, contact resistance between the semiconductor base body and the electrode layer can be further reduced. According to the silicon carbide semiconductor device 100 of the present invention, the thickness of the conductive oxidation layer 130 falls within a range of 0.3nm to 2.25nm and hence, the contact resistance between the semiconductor base body and the electrode layer can be still further reduced.
摘要翻译：本发明的碳化硅半导体器件100包括：碳化硅层110; 与碳化硅层110接触的反应层120; 与反应层120接触的导电氧化层130; 以及电极层140，其在导电氧化层130之间形成在反应层120上。优选导电性氧化层130的厚度在0.3nm〜2.25nm的范围内。根据本发明的碳化硅半导体器件100，通过在反应层120上形成导电氧化层130而不是在反应层120上直接形成电极层140的电极层140之间的接触电阻，可以进一步减少半导体基体和电极层。根据本发明的碳化硅半导体器件100，导电氧化层130的厚度在0.3nm至2.25nm的范围内，因此半导体基体与电极层之间的接触电阻可以更进一步降低。

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