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1. 发明公开

EP1768173A1 METHOD FOR EVALUATING SOI WAFER 审中-公开
标题翻译： VERFAHREN ZUM BEWERTEN EINES SOI-WAFERS
公开(公告)号：EP1768173A1
公开(公告)日：2007-03-28
申请号：EP05745964.6
申请日：2005-05-31
申请人： SHIN-ETSU HANDOTAI COMPANY LIMITED
发明人： OHTSUKI, Tsuyoshi c/o Isobe R & D Center , SATO, Hideki c/o Isobe R & D Center
IPC分类号： H01L21/66
CPC分类号： G01R31/2648 , G01R31/2898
摘要： The present invention is a method for evaluating an SOI wafer by using a mercury probe, comprising at least steps of, subjecting the SOI wafer to a hydrofluoric acid cleaning treatment and thereby to remove a native oxide film formed in a surface of the SOI wafer, next subjecting the native oxide film-removed SOI wafer to a treatment for stabilizing charge state, then contacting the charge-state stabilizing-treated SOI wafer with the mercury probe, and thereby evaluating the SOI wafer. Thereby, there can be provided an evaluation method in which a large-scale apparatus and multiple steps such as a photolithography process are not required and by which an electric characteristic of an SOI wafer can be measured simply and high-precisely in a short time and operation rate of measurement apparatus is improved and thereby the SOI wafer can be effectively evaluated.
摘要翻译：本发明是一种通过使用水银探针来评估SOI晶片的方法，至少包括以下步骤：对SOI晶片进行氢氟酸清洗处理，从而除去在SOI晶片的表面形成的自然氧化膜，接下来对自然氧化物膜去除的SOI晶片进行用于稳定电荷状态的处理，然后使电荷状态稳定处理的SOI晶片与汞探针接触，从而评估SOI晶片。因此，可以提供一种评估方法，其中不需要诸如光刻工艺的大规模装置和多个步骤，并且可以在短时间内简单且高精度地测量SOI晶片的电特性，提高了测量装置的操作率，从而可以有效地评估SOI晶片。

2. 发明公开

EP1796157A1 SEMICONDUCTOR WAFER EVALUATING METHOD AND SEMICONDUCTOR WAFER EVALUATING APPARATUS 审中-公开
标题翻译： VERFAHREN UND VORRICHTUNG ZUR BEWERTUNG EINES HALBLEITER-WAFERS
公开(公告)号：EP1796157A1
公开(公告)日：2007-06-13
申请号：EP05782361.9
申请日：2005-09-12
申请人： SHIN-ETSU HANDOTAI COMPANY LIMITED
发明人： OHTSUKI, Tsuyoshi c/o Isobe R & D Center , SATO, Hideki c/o Isobe R & D Center
IPC分类号： H01L21/66 , H01L27/12 , G01R31/26 , G01R1/06
CPC分类号： G01R31/2889 , H01L22/14
摘要： The present invention is a method for evaluating a semiconductor wafer by measuring an electric characteristic of the semiconductor wafer by using a mercury electrode, wherein when the semiconductor wafer is held on a wafer chuck that the mercury electrode is formed in a holding surface of so that a side of a surface to be measured of the semiconductor wafer is set to a side of the wafer chuck, the semiconductor wafer is held on the wafer chuck whose diameter forming an outermost periphery of the holding surface is smaller than a diameter forming an outermost periphery of the surface to be measured of the semiconductor wafer, and then, the electric characteristic is measured by contacting the mercury electrode with the surface to be measured of the wafer, and an evaluation apparatus. Thereby, there can be provided an evaluation method and an evaluation apparatus for a semiconductor wafer by which when the semiconductor wafer is evaluated by measuring an electric characteristic thereof by using a mercury electrode, the semiconductor wafer can be high-precisely and effectively evaluated by setting a size of a holding surface of a wafer chuck to be smaller than that of a surface to be measured of the semiconductor wafer that is an object to be measured.
摘要翻译：本发明是通过使用水银电极测量半导体晶片的电特性来评估半导体晶片的方法，其中当将半导体晶片保持在晶片卡盘上时，将汞电极形成在保持表面上，使得将半导体晶片的待测表面的一侧设置在晶片卡盘的一侧，将半导体晶片保持在形成保持表面的最外周的直径小于形成最外周的直径的晶片卡盘上的半导体晶片的被测定表面，然后通过使水银电极与晶片的待测表面接触来测量电特性，以及评估装置。因此，可以提供一种用于半导体晶片的评估方法和评估装置，当通过使用汞电极测量半导体晶片的电特性来评估半导体晶片时，可以通过设置高精度和有效地评估半导体晶片晶片卡盘的保持表面的尺寸小于作为被测量对象的半导体晶片的待测量表面的尺寸。

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