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1. 发明公开

EP0315572A2 Apparatus for measuring the diameter of a crystal 失效
标题翻译： Vorrichtung zum Messen des Durchmessers eines Kristalles。
公开(公告)号：EP0315572A2
公开(公告)日：1989-05-10
申请号：EP88710031.1
申请日：1988-09-26
申请人： Shin-Etsu Handotai Company, Limited
发明人： Katsuoka, Nobuo , Hirano, Yoshihiro , Kakegawa, Tomohiro
IPC分类号： G01B11/08
CPC分类号： G01B11/08
摘要： An apparatus for use in the production of monocrystalline rod by Czochralski method and adapted for measuring the diameter of the monocrystalline rod at the melt surface of the melt (16) by processing image signal derived from an image sensor (16). In order to improve the measuring accuracy, the measurement of the diameter is conducted by determining the diameter of an image of the monocrystalline rod at the melt surface through processing the output signal from the image sensor (16), and multiplying the rod image diameter with a function of the difference between the initial melt surface level and a melt surface level corrected in accordance with a change in the temperature in the apparatus chamber or a change in the level of the electrical power supplied to a heater for heating a crucible.
摘要翻译：一种用于通过切克劳斯基法生产单晶棒的装置，适用于通过处理从图像传感器（16）导出的图像信号来测量熔体（16）的熔融表面处的单晶棒的直径。为了提高测量精度，通过处理来自图像传感器（16）的输出信号，通过确定熔融表面上的单晶棒的图像的直径来进行直径测量，并将棒图像直径与初始熔融表面水平与根据装置室内的温度变化校正的熔体表面水平之间的差异或提供给用于加热坩埚的加热器的电力水平的变化的函数。

2. 发明公开

EP0781872A3 Apparatus and method for adjusting initial position of melt surface 失效
标题翻译：装置和方法，用于调节熔体表面的初始位置
公开(公告)号：EP0781872A3
公开(公告)日：1998-03-04
申请号：EP96309095.6
申请日：1996-12-13
申请人： SHIN-ETSU HANDOTAI COMPANY LIMITED
发明人： Urano, Masahiko , Ozaki, Atsushi , Kakegawa, Tomohiro , Nakano, Hideki
IPC分类号： C30B15/26 , C30B15/20
CPC分类号： C30B15/20 , C30B15/26 , Y10T117/1004 , Y10T117/1008
摘要： An apparatus and a method capable of automatically adjusting an initial position of the surface of a melt without an operator are provided. In a single crystal puller using a wire as a suspender for a seed crystal for growing a single crystal of silicon or the like according to the CZ method, a reference position of the seed crystal is detected the wire is unwound to lower the end of the wire to a position higher by a distance W-X from the reference position and then pulled upward above said reference position to correct the wire for an extension due to the weight of a single crystal attached thereto. Also, the wire is left above a melt for about ten minutes to provide a constant amount of extension to the wire due to heat of the melt. These operations are automatically performed.

3. 发明公开

EP0781872A2 Apparatus and method for adjusting initial position of melt surface 失效
标题翻译： Vorrichtung und Verfahren zur Einstellung der Ausgangsposition einerSchmelzenoberfläche
公开(公告)号：EP0781872A2
公开(公告)日：1997-07-02
申请号：EP96309095.6
申请日：1996-12-13
申请人： SHIN-ETSU HANDOTAI COMPANY LIMITED
发明人： Urano, Masahiko , Ozaki, Atsushi , Kakegawa, Tomohiro , Nakano, Hideki
IPC分类号： C30B15/26 , C30B15/20
CPC分类号： C30B15/20 , C30B15/26 , Y10T117/1004 , Y10T117/1008
摘要： An apparatus and a method capable of automatically adjusting an initial position of the surface of a melt without an operator are provided. In a single crystal puller using a wire as a suspender for a seed crystal for growing a single crystal of silicon or the like according to the CZ method, a reference position of the seed crystal is detected the wire is unwound to lower the end of the wire to a position higher by a distance W-X from the reference position and then pulled upward above said reference position to correct the wire for an extension due to the weight of a single crystal attached thereto. Also, the wire is left above a melt for about ten minutes to provide a constant amount of extension to the wire due to heat of the melt. These operations are automatically performed.
摘要翻译：提供了一种能够自动调节熔体表面的初始位置而不需要操作者的装置和方法。在根据CZ方法使用线作为用于生长硅等单晶的晶种的悬挂器的单晶拉拔器中，检测到晶种的参考位置，以使线退绕以降低导线连接到距参考位置高一个距离WX的位置，然后在所述参考位置上方向上拉，以便由于连接到其上的单个晶体的重量来校正线材的延伸。此外，将线材保留在熔体上方约十分钟，以由于熔体的热量而提供恒定的导线延伸量。自动执行这些操作。

4. 发明公开

EP0781870A2 Crystal pulling apparatus 失效
标题翻译： Kristallziehvorrichtung
公开(公告)号：EP0781870A2
公开(公告)日：1997-07-02
申请号：EP96309330.7
申请日：1996-12-20
申请人： SHIN-ETSU HANDOTAI COMPANY LIMITED
发明人： Ozaki, Atsushi , Urano, Masahiko , Harada, Isamu , Kakegawa, Tomohiro , Nakano, Hideki
IPC分类号： C30B15/14
CPC分类号： C30B15/14 , Y10S117/90 , Y10T117/1004 , Y10T117/1008
摘要： A crystal pulling apparatus is disclosed which employs the Czochralski method. The crystal pulling apparatus is operated while a heater for heating a material melt in a crucible is controlled by the main controller of a main system. When maintenance of a heating state is disabled for some reason, a relay of a signal changeover circuit is switched so as to maintain the heating state under control of the backup controller of a backup system, thereby maintaining the material melt in a molten state. Thus, even when it becomes impossible for the main system to heat the material melt within the crucible, the material melt can be prevented from becoming solidified.
摘要翻译：公开了采用Czochralski法的晶体拉制装置。在通过主系统的主控制器控制用于加热坩埚中的材料熔化的加热器的同时操作晶体牵引装置。当由于某种原因禁用加热状态的维持时，切换信号切换电路的继电器，以便在备用系统的备用控制器的控制下保持加热状态，从而将材料熔体保持在熔融状态。因此，即使主系统不可能在坩埚内加热材料熔体，也可以防止材料熔融变硬化。

5. 发明授权

EP0315572B1 Apparatus for measuring the diameter of a crystal 失效
标题翻译：用于测量水晶直径的装置
公开(公告)号：EP0315572B1
公开(公告)日：1992-12-02
申请号：EP88710031.1
申请日：1988-09-26
申请人： Shin-Etsu Handotai Company, Limited
发明人： Katsuoka, Nobuo , Hirano, Yoshihiro , Kakegawa, Tomohiro
IPC分类号： G01B11/08
CPC分类号： G01B11/08

6. 发明公开

EP0315572A3 Apparatus for measuring the diameter of a crystal 失效
标题翻译：用于测量晶体直径的装置
公开(公告)号：EP0315572A3
公开(公告)日：1991-01-30
申请号：EP88710031.1
申请日：1988-09-26
申请人： Shin-Etsu Handotai Company, Limited
发明人： Katsuoka, Nobuo , Hirano, Yoshihiro , Kakegawa, Tomohiro
IPC分类号： G01B11/08
CPC分类号： G01B11/08
摘要： An apparatus for use in the production of monocrystalline rod by Czochralski method and adapted for measuring the diameter of the monocrystalline rod at the melt surface of the melt (16) by processing image signal derived from an image sensor (16). In order to improve the measuring accuracy, the measurement of the diameter is conducted by determining the diameter of an image of the monocrystalline rod at the melt surface through processing the output signal from the image sensor (16), and multiplying the rod image diameter with a function of the difference between the initial melt surface level and a melt surface level corrected in accordance with a change in the temperature in the apparatus chamber or a change in the level of the electrical power supplied to a heater for heating a crucible.

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