专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明公开

EP3029730A4 BONDED WAFER MANUFACTURING METHOD 有权
标题翻译： HERSTELLUNGSVERFAHRENFÜRVERKLEBTE WAFER
公开(公告)号：EP3029730A4
公开(公告)日：2017-03-29
申请号：EP14854103
申请日：2014-08-22
申请人： SHIN-ETSU HANDOTAI CO LTD
发明人： YOKOKAWA ISAO , AGA HIROJI , FUJISAWA HIROSHI
IPC分类号： H01L21/306 , H01L21/762
CPC分类号： H01L21/76254 , H01L21/02052 , H01L21/02057 , H01L21/30604
摘要： The present invention is a method for manufacturing a bonded wafer comprising: producing a bonded wafer having a thin-film on its base wafer by an ion implantation delamination method, and reducing a film thickness of the thin-film, wherein the step of reducing the film thickness comprises a stage of reducing the film thickness by sacrificial oxidation treatment or vapor phase etching, wherein the method for manufacturing a bonded wafer further comprises a cleaning step of cleaning the bonded wafer exposing the delamination surface just before the step of reducing the film thickness, wherein the cleaning step includes a stage of performing a wet cleaning by successively dipping the bonded wafer to plural of cleaning baths, and wherein the wet cleaning is performed without applying ultrasonic in each of the cleaning baths in the wet cleaning. The method enables to clean a bonded wafer exposing a delamination surface remaining damage of ion implantation using a cleaning line in a strict control level.
摘要翻译：本发明是一种制造键合晶片的方法，包括：通过离子注入剥离方法在其基底晶片上制造具有薄膜的键合晶片，并且减小该薄膜的膜厚度，其中，膜厚包括通过牺牲氧化处理或气相蚀刻来减小膜厚度的阶段，其中用于制造键合晶片的方法还包括清洁步骤，即在减小膜厚度的步骤之前清洁暴露剥离表面的键合晶片其中，所述清洗工序包括通过将所述贴合晶片依次浸渍于多个清洗槽来进行湿式清洗的阶段，所述湿式清洗在所述湿式清洗中的各清洗槽内不施加超声波地进行。该方法能够在严格的控制水平下使用清洁线清洁剥离表面的键合晶片，并保留离子注入的损伤。

IPRDB

热门服务

关于我们

友情链接

联系方式