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1. 发明公开

EP1612805A1 Writing method of variable resistance memory device 审中-公开
标题翻译： Schreibverfahrenfüreinen Speicher mitveränderlichemWiderstand
公开(公告)号：EP1612805A1
公开(公告)日：2006-01-04
申请号：EP05254028.3
申请日：2005-06-28
申请人： SHARP KABUSHIKI KAISHA
发明人： Hosoi, Yasunari , Tamai, Yukio , Ishihara, Kazuya , Kobayashi, Shinji , Awaya, Nobuyoshi
IPC分类号： G11C13/00
CPC分类号： G11C29/50 , G11C13/0007 , G11C13/0069 , G11C29/50008 , G11C2013/009 , G11C2213/31
摘要： A variable resistance element is configured to be provided with a perovskite-type oxide (2) between a first electrode (1) and a second electrode (3), of which electric resistance between the first electrode (1) and the second electrode (3) is changed by applying a voltage pulse of a predetermined polarity between the first electrode (1) and the second electrode (3), and the variable resistance element has a resistance hysteresis characteristic, in which a changing rate of a resistance value is changed from positive to negative with respect to increase of a cumulative pulse applying time in the application of the voltage pulse. The voltage pulse is applied to the variable resistance element so that the cumulative pulse applying time is not longer than a specific cumulative pulse applying time, in which the changing rate of the resistance value is changed from positive to negative with respect to increase of the cumulative pulse applying time in the resistance hysteresis characteristic.
摘要翻译：可变电阻元件被配置为在第一电极（1）和第二电极（3）之间设置有钙钛矿型氧化物（2），其中第一电极（1）和第二电极（3）之间的电阻）通过在第一电极（1）和第二电极（3）之间施加预定极性的电压脉冲而改变，并且可变电阻元件具有电阻滞后特性，其中电阻值的变化率从相对于施加电压脉冲的累积脉冲施加时间的增加而言，为正。电压脉冲被施加到可变电阻元件，使得累积脉冲施加时间不长于特定的累积脉冲施加时间，其中电阻值的变化率相对于累积的增加而从正变化到负脉冲施加时间在电阻滞后特性。

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