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1. 发明公开

EP2486596A4 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译： HERBLEITERBAUELEMENT UND HERSTELLUNGSVERFAHRENDAFÜR
公开(公告)号：EP2486596A4
公开(公告)日：2013-08-28
申请号：EP10821867
申请日：2010-09-15
申请人： SEMICONDUCTOR ENERGY LAB
发明人： YAMAZAKI SHUNPEI , UOCHI HIDEKI , NAKAMURA YASUO , SUGAO JUNPEI , KOYAMA JUN
IPC分类号： H01L29/786 , G02F1/1368 , G09F9/30 , H01L27/12 , H01L29/49
CPC分类号： H01L27/12 , H01L27/124
摘要： As for a semiconductor device which is typified by a display device, it is an object to provide a highly reliable semiconductor device to which a large-sized or high-definition screen is applicable and which has high display quality and operates stably. By using a conductive layer including Cu as a long lead wiring, an increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.
摘要翻译：对于以显示装置为代表的半导体装置，其目的在于提供一种高可靠性的可应用大尺寸或高清晰度屏幕的高可靠性半导体装置，其具有高显示质量并且稳定地工作。通过使用包含Cu作为长引线的导电层，可以抑制布线电阻的增加。此外，包括Cu的导电层以与形成TFT的沟道区域的半导体层不重叠并且被包括氮化硅的绝缘层包围的方式设置，由此可以防止Cu的扩散 ; 因此，可以制造高可靠性的半导体器件。具体地说，作为半导体装置的一个实施方式的显示装置，即使在尺寸或定义增加的情况下也可以具有高的显示质量和稳定的运行。

2. 发明公开

EP2486595A4 SEMICONDUCTOR DEVICE 有权
标题翻译： HALBLEITERBAUELEMENT
公开(公告)号：EP2486595A4
公开(公告)日：2014-04-16
申请号：EP10821866
申请日：2010-09-15
申请人： SEMICONDUCTOR ENERGY LAB
发明人： YAMAZAKI SHUNPEI , KOYAMA JUN , TAKAHASHI MASAHIRO , KISHIDA HIDEYUKI , MIYANAGA AKIHARU , NAKAMURA YASUO , SUGAO JUNPEI , UOCHI HIDEKI
IPC分类号： H01L29/786 , G02F1/1368 , G09F9/30 , H01L27/12 , H01L29/45 , H01L29/49 , H01L29/66
CPC分类号： H01L29/78669 , H01L27/1214 , H01L27/1225 , H01L27/124 , H01L27/1288 , H01L29/45 , H01L29/4908 , H01L29/66969 , H01L29/78606 , H01L29/78678 , H01L29/7869
摘要： It is an object to provide a semiconductor device typified by a display device having a favorable display quality, in which parasitic resistance generated in a connection portion between a semiconductor layer and an electrode is suppressed and an adverse effect such as voltage drop, a defect in signal wiring to a pixel, a defect in grayscale, and the like due to wiring resistance are prevented. In order to achieve the above object, a semiconductor device according to the present invention may have a structure where a wiring with low resistance is connected to a thin film transistor in which a source electrode and a drain electrode that include metal with high oxygen affinity are connected to an oxide semiconductor layer with a suppressed impurity concentration. In addition, the thin film transistor including the oxide semiconductor may be surrounded by insulating films to be sealed.
摘要翻译：本发明的目的是提供一种由具有良好显示质量的显示装置代表的半导体器件，其中在半导体层和电极之间的连接部分中产生的寄生电阻被抑制，并且具有不利影响，例如电压降，防止由于布线电阻而导致像素的信号布线，灰度级的缺陷等。为了实现上述目的，根据本发明的半导体器件可以具有这样的结构，其中具有低电阻的布线连接到薄膜晶体管，其中包括具有高氧亲和力的金属的源电极和漏电极是连接到具有抑制的杂质浓度的氧化物半导体层。此外，包括氧化物半导体的薄膜晶体管可以被要被密封的绝缘膜包围。

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