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1. 发明公开

EP1338914A3 Method for manufacturing liquid crystal display 失效
标题翻译：液晶显示器的制造方法
公开(公告)号：EP1338914A3
公开(公告)日：2003-11-19
申请号：EP03076155.5
申请日：1996-11-19
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Lee, Jueng-gil, 107-103 Chungkoo Apt. , Nam, Hyo-rak, Ka-209 Sunghwan Villa , Lee, Jung-ho
IPC分类号： G02F1/1362
CPC分类号： G02F1/136286 , G02F1/1345 , G02F1/13458 , G02F1/136227 , G02F1/1368 , G02F2001/13629 , H01L21/28008 , H01L23/4827 , H01L27/12 , H01L27/124 , H01L27/1288 , H01L29/42384 , H01L29/4908 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing a liquid crystal display is provided. The method includes the steps of forming a gate electrode and a gate line on a substrate, wherein said gate electrode and said gate line comprises at least one refractory metal layer; forming an insulating film on said gate electrode and said gate line; forming an amorphous silicon film pattern and a doped amorphous silicon film pattern on said insulating film, wherein said doped amorphous silicon film pattern is formed entirely on said amorphous silicon film pattern and a whole bottom surface of said doped amorphous silicon film pattern is directly contacted to said amorphous silicon film pattern; forming a source electrode and a drain electrode composed of a third metal film and then etching away a portion of said doped amorphous silicon film pattern located between said source electrode and said drain electrode; forming a protection film pattern having a first contact hole which exposes a portion of said drain electrode and a second contact hole which exposes a portion of said gate line, wherein said protection film pattern contacts a top surface of said amorphous silicon pattern located between said source electrode and said drain electrode and said insulating film under said second contact hole is etched away to expose a portion of said gate line; and forming a first pixel electrode pattern which is connected to said drain electrode through said first contact hole and a second pixel electrode pattern which is electrically connected to said gate line through said second contact hole. It is thus possible to reduce the number of photolithography processes and to prevent a battery effect and generation of a hillock.
摘要翻译：提供了一种用于制造液晶显示器的方法。该方法包括以下步骤：在衬底上形成栅电极和栅极线，其中所述栅电极和所述栅极线包括至少一个难熔金属层; 在所述栅电极和所述栅线上形成绝缘膜; 在所述绝缘膜上形成非晶硅膜图案和掺杂非晶硅膜图案，其中所述掺杂非晶硅膜图案完全在所述非晶硅膜图案上形成，并且所述掺杂非晶硅膜图案的整个底面直接接触所述非晶硅膜图案; 形成由第三金属膜构成的源电极和漏电极，然后蚀刻掉位于所述源电极和所述漏电极之间的所述掺杂非晶硅膜图案的一部分; 形成具有暴露所述漏电极的一部分的第一接触孔和暴露所述栅线的一部分的第二接触孔的保护膜图案，其中所述保护膜图案接触位于所述源极之间的所述非晶硅图案的顶表面，将所述第二接触孔下方的所述漏电极和所述绝缘膜蚀刻掉以暴露所述栅线的一部分; 以及形成通过所述第一接触孔连接到所述漏电极的第一像素电极图案和通过所述第二接触孔电连接到所述栅线的第二像素电极图案。因此可以减少光刻工艺的数量并防止电池效应和小丘的产生。

2. 发明公开

EP1338914A2 Method for manufacturing liquid crystal display 失效
标题翻译： Verfahren zur Herstellung vonFlüssigkristallanzeigevorrichtungen
公开(公告)号：EP1338914A2
公开(公告)日：2003-08-27
申请号：EP03076155.5
申请日：1996-11-19
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Lee, Jueng-gil, 107-103 Chungkoo Apt. , Nam, Hyo-rak, Ka-209 Sunghwan Villa , Lee, Jung-ho
IPC分类号： G02F1/1362
CPC分类号： G02F1/136286 , G02F1/1345 , G02F1/13458 , G02F1/136227 , G02F1/1368 , G02F2001/13629 , H01L21/28008 , H01L23/4827 , H01L27/12 , H01L27/124 , H01L27/1288 , H01L29/42384 , H01L29/4908 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing a liquid crystal display is provided. The method includes the steps of forming a gate electrode and a gate line on a substrate, wherein said gate electrode and said gate line comprises at least one refractory metal layer;

forming an insulating film on said gate electrode and said gate line;
forming an amorphous silicon film pattern and a doped amorphous silicon film pattern on said insulating film, wherein said doped amorphous silicon film pattern is formed entirely on said amorphous silicon film pattern and a whole bottom surface of said doped amorphous silicon film pattern is directly contacted to said amorphous silicon film pattern;
forming a source electrode and a drain electrode composed of a third metal film and then etching away a portion of said doped amorphous silicon film pattern located between said source electrode and said drain electrode;
forming a protection film pattern having a first contact hole which exposes a portion of said drain electrode and a second contact hole which exposes a portion of said gate line, wherein said protection film pattern contacts a top surface of said amorphous silicon pattern located between said source electrode and said drain electrode and said insulating film under said second contact hole is etched away to expose a portion of said gate line; and
forming a first pixel electrode pattern which is connected to said drain electrode through said first contact hole and a second pixel electrode pattern which is electrically connected to said gate line through said second contact hole. It is thus possible to reduce the number of photolithography processes and to prevent a battery effect and generation of a hillock.
摘要翻译：提供一种制造液晶显示器的方法。该方法包括在基板上形成栅电极和栅极线的步骤，其中所述栅电极和所述栅极线包括至少一个难熔金属层; 在所述栅电极和所述栅极线上形成绝缘膜; 在所述绝缘膜上形成非晶硅膜图案和掺杂非晶硅膜图案，其中所述掺杂非晶硅膜图案完全形成在所述非晶硅膜图案上，并且所述掺杂非晶硅膜图案的整个底表面直接接触所述非晶硅膜图案; 形成由第三金属膜构成的源电极和漏电极，然后蚀刻位于所述源电极和所述漏电极之间的所述掺杂非晶硅膜图案的一部分; 形成具有暴露所述漏电极的一部分的第一接触孔和暴露所述栅极线的一部分的第二接触孔的保护膜图案，其中所述保护膜图案接触位于所述源极之间的所述非晶硅图案的顶表面电极和所述漏电极和所述第二接触孔下面的所述绝缘膜被蚀刻掉以露出所述栅极线的一部分; 以及形成通过所述第一接触孔连接到所述漏电极的第一像素电极图案和通过所述第二接触孔电连接到所述栅极线的第二像素电极图案。因此，可以减少光刻工艺的数量并防止电池效应和产生小丘。

3. 发明公开

EP0775931A3 Method for manufacturing liquid crystal display 失效
标题翻译： Verfahren zur Herstellung einerFlüssigkristall-Anzeige
公开(公告)号：EP0775931A3
公开(公告)日：1998-03-25
申请号：EP96308344.9
申请日：1996-11-19
申请人： Samsung Electronics Co., Ltd.
发明人： Lee, Jueng-gil , Lee, Jung-ho , Nam, Hyo-rak
IPC分类号： G02F1/136
CPC分类号： G02F1/136286 , G02F1/1345 , G02F1/13458 , G02F1/136227 , G02F1/1368 , G02F2001/13629 , H01L21/28008 , H01L23/4827 , H01L27/12 , H01L27/124 , H01L27/1288 , H01L29/42384 , H01L29/4908 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing a liquid crystal display is provided. The method includes the steps of forming a gate electrode and a gate pad by sequentially depositing a first metal film (22) and a second metal film (24) on a substrate (20) on a thin film transistor (TFT) area and a pad area, respectively, by a first photolithography process, forming an insulating film (26) on the entire surface of the substrate (20) on which the gate electrode and the gate pad are formed, forming a semiconductor film pattern (28,30) on the insulating film (26) of the TFT area using a second photolithography process, forming a source electrode (32a) and a drain electrode (32b) composed of a third metal film in the TFT area using a third photolithography process, forming a protection film pattern (34) which exposes a portion of the drain electrode (32b) and a portion of the gate pad on the substrate on which the source electrode (32a) and the drain electrode (32b) are formed using a fourth photolithography process, and forming a pixel electrode (36) connected to the drain electrode and the gate pad on the substrate on which the protection film pattern is formed using a fifth photolithography process. It is thus possible to reduce the number of photolithography processes and to prevent a battery effect and generation of a hillock.
摘要翻译：提供一种制造液晶显示器的方法。该方法包括在基板上形成栅电极和栅极线的步骤，其中所述栅电极和所述栅极线包括至少一个难熔金属层; 在所述栅电极和所述栅极线上形成绝缘膜; 在所述绝缘膜上形成非晶硅膜图案和掺杂非晶硅膜图案，其中所述掺杂非晶硅膜图案完全形成在所述非晶硅膜图案上，并且所述掺杂非晶硅膜图案的整个底表面直接接触所述非晶硅膜图案; 形成由第三金属膜构成的源电极和漏电极，然后蚀刻位于所述源电极和所述漏电极之间的所述掺杂非晶硅膜图案的一部分; 形成具有暴露所述漏电极的一部分的第一接触孔和暴露所述栅极线的一部分的第二接触孔的保护膜图案，其中所述保护膜图案接触位于所述源极之间的所述非晶硅图案的顶表面电极和所述漏电极和所述第二接触孔下面的所述绝缘膜被蚀刻掉以露出所述栅极线的一部分; 以及形成通过所述第一接触孔连接到所述漏电极的第一像素电极图案和通过所述第二接触孔电连接到所述栅极线的第二像素电极图案。因此，可以减少光刻工艺的数量并防止电池效应和产生小丘。

4. 发明授权

EP0775931B1 Method of manufacturing a liquid crystal display 失效
标题翻译：一种用于生产液晶显示器过程
公开(公告)号：EP0775931B1
公开(公告)日：2005-10-05
申请号：EP96308344.9
申请日：1996-11-19
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Lee, Jueng-gil , Lee, Jung-ho , Nam, Hyo-rak
IPC分类号： G02F1/136
CPC分类号： G02F1/136286 , G02F1/1345 , G02F1/13458 , G02F1/136227 , G02F1/1368 , G02F2001/13629 , H01L21/28008 , H01L23/4827 , H01L27/12 , H01L27/124 , H01L27/1288 , H01L29/42384 , H01L29/4908 , H01L2924/0002 , H01L2924/00

5. 发明公开

EP0775931A2 Method for manufacturing liquid crystal display 失效
标题翻译： Verfahren zur Herstellung einerFlüssigkristall-Anzeige
公开(公告)号：EP0775931A2
公开(公告)日：1997-05-28
申请号：EP96308344.9
申请日：1996-11-19
申请人： Samsung Electronics Co., Ltd.
发明人： Lee, Jueng-gil , Lee, Jung-ho , Nam, Hyo-rak
IPC分类号： G02F1/136
CPC分类号： G02F1/136286 , G02F1/1345 , G02F1/13458 , G02F1/136227 , G02F1/1368 , G02F2001/13629 , H01L21/28008 , H01L23/4827 , H01L27/12 , H01L27/124 , H01L27/1288 , H01L29/42384 , H01L29/4908 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing a liquid crystal display is provided. The method includes the steps of forming a gate electrode and a gate pad by sequentially depositing a first metal film (22) and a second metal film (24) on a substrate (20) on a thin film transistor (TFT) area and a pad area, respectively, by a first photolithography process, forming an insulating film (26) on the entire surface of the substrate (20) on which the gate electrode and the gate pad are formed, forming a semiconductor film pattern (28,30) on the insulating film (26) of the TFT area using a second photolithography process, forming a source electrode (32a) and a drain electrode (32b) composed of a third metal film in the TFT area using a third photolithography process, forming a protection film pattern (34) which exposes a portion of the drain electrode (32b) and a portion of the gate pad on the substrate on which the source electrode (32a) and the drain electrode (32b) are formed using a fourth photolithography process, and forming a pixel electrode (36) connected to the drain electrode and the gate pad on the substrate on which the protection film pattern is formed using a fifth photolithography process. It is thus possible to reduce the number of photolithography processes and to prevent a battery effect and generation of a hillock.
摘要翻译：提供一种制造液晶显示器的方法。该方法包括以下步骤：通过在薄膜晶体管（TFT）区域上的衬底（20）上依次沉积第一金属膜（22）和第二金属膜（24）来形成栅电极和栅极焊盘，区域，分别通过第一光刻工艺在形成有栅极电极和栅极焊盘的基板的整个表面上形成绝缘膜，形成半导体膜图案（28,30）使用第二光刻工艺的TFT区域的绝缘膜（26），使用第三光刻工艺在TFT区域中形成由第三金属膜构成的源电极（32a）和漏电极（32b），形成保护膜使用第四光刻工艺在其上形成有源电极（32a）和漏电极（32b）的衬底上露出漏极电极（32b）的一部分和栅极焊盘的一部分的图案（34），以及形成连接到所述抽屉的像素电极（36）使用第五光刻工艺在其上形成保护膜图案的基板上的栅极焊盘。因此，可以减少光刻工艺的数量并防止电池效应和产生小丘。

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