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1. 发明公开

EP3166714A1 MODIFICATION OF ZEOLITIC IMIDAZOLATE FRAMEWORKS AND AZIDE CROSS-LINKED MIXED-MATRIX MEMBRANES MADE THEREFROM 审中-公开
标题翻译：由此制备的非晶质咪唑骨架和AZIDE交联混合基质膜的改性
公开(公告)号：EP3166714A1
公开(公告)日：2017-05-17
申请号：EP16818436.4
申请日：2016-06-09
申请人： SABIC Global Technologies B.V.
发明人： ODEH, Ihab, N. , LIU, Yunyang , SHAO, Lei
IPC分类号： B01D71/00 , B01D53/22
CPC分类号： B01J20/226 , B01D53/228 , B01D67/0079 , B01D69/125 , B01D69/148 , B01D71/64 , B01D2323/30 , B01J20/262 , B01J20/267 , B01J20/2803 , B01J20/28033 , B01J20/28038 , B01J20/2804 , B01J20/3078 , B01J20/3085 , C07F3/06 , C08G73/1067 , C08J3/247 , C08J2379/08 , C08K5/56 , F17C11/00
摘要： Disclosed is a method of modifying a metal-organic framework (MOF), the modified MOF, and methods for using the same. The method of modification can include heating a mixture comprising an azide compound and a MOF to generate a nitrene compound and nitrogen (N2) from the azide compound and covalently bonding the nitrene compound to the MOF to obtain the modified MOF.
摘要翻译：公开了一种修饰金属有机骨架（MOF）的方法，修饰的MOF及其使用方法。改性方法可以包括加热包含叠氮化合物和MOF的混合物以由叠氮化合物生成氮烯化合物和氮气（N 2），并将氮化合物共价结合到MOF以获得修饰的MOF。

2. 发明授权

EP3192108B1 USE OF AMBIENT-ROBUST SOLUTION PROCESSING FOR PREPARING NANOSCALE ORGANIC FERROELECTRIC FILMS 有权
公开(公告)号：EP3192108B1
公开(公告)日：2019-03-27
申请号：EP15840000.2
申请日：2015-06-01
申请人： SABIC Global Technologies B.V.
发明人： PARK, Ji, Hoon , ALSHAREEF, Husam, N. , ODEH, Ihab, N.
IPC分类号： H01L51/30

3. 发明公开

EP3192108A1 USE OF AMBIENT-ROBUST SOLUTION PROCESSING FOR PREPARING NANOSCALE ORGANIC FERROELECTRIC FILMS 审中-公开
标题翻译：使用环境稳定的溶液处理制备纳米级有机铁电薄膜
公开(公告)号：EP3192108A1
公开(公告)日：2017-07-19
申请号：EP15840000.2
申请日：2015-06-01
申请人： SABIC Global Technologies B.V.
发明人： PARK, Ji, Hoon , ALSHAREEF, Husam, N. , ODEH, Ihab, N.
IPC分类号： H01L51/30
CPC分类号： H01L27/11507 , C09D127/16 , C23C16/00 , H01L21/0212 , H01L21/02282 , H01L27/1159 , H01L28/40 , H01L29/516 , H01L51/052 , C08L33/12 , C08L25/06 , C08L71/12
摘要： Disclosed is a method for preparing a ferroelectric film having ferroelectric hysteresis properties, the method comprising (a) obtaining a composition comprising a solvent and an organic ferroelectric polymer solubilized therein, (b) heating the composition to above 75° C. and below the boiling point of the solvent, (c) depositing the heated composition onto a substrate; and (d) annealing the heated composition to form a ferroelectric film having ferroelectric hysteresis properties and a thickness of 400 nm or less.
摘要翻译：公开了一种用于制备具有铁电滞后性质的铁电薄膜的方法，所述方法包括：（a）获得包含溶剂和溶解于其中的有机铁电聚合物的组合物，（b）将所述组合物加热至高于75℃且低于沸腾（c）将经加热的组合物沉积到基材上; （d）将加热的组合物退火以形成具有铁电滞后性质和400nm或更小的厚度的铁电薄膜。

4. 发明公开

EP3122839A1 COLOR CHANGING MATERIAL 审中-公开
标题翻译： FARBNDNDERNDES材料
公开(公告)号：EP3122839A1
公开(公告)日：2017-02-01
申请号：EP15768802.9
申请日：2015-03-25
申请人： SABIC Global Technologies B.V.
发明人： ODEH, Ihab, N. , MARKANDAY, Meghna , VAN PEER, Jurgen , VAN DER WAL, John , NADKARNI, Pradeep , HOEKS, Theo , MOIDEEN, Mohamed, Ashraf , KORIPELLY, Girish
IPC分类号： C09K9/00 , C08L23/00
CPC分类号： C09K9/02 , B32B27/08 , B32B27/32 , B32B27/365 , B32B2307/4026 , B32B2310/0831 , C08J5/18 , C08J2323/06 , C08J2369/00 , C08K5/0041 , C08L69/00 , C09B67/0063 , C09B67/0097 , G02B1/041 , C08L23/04
摘要： Disclosed is a photochromic material that includes a first polymeric layer having a photochromic compound that is capable of being activated in response to a stimulus. The first polymeric layer is configured such that the activated photochromic compound becomes inactivated within 10 minutes, preferably within 5 minutes, most preferably within 1 minute, in the absence of said stimulus.
摘要翻译：公开了一种光致变色材料，其包括具有能够响应于刺激而被活化的光致变色化合物的第一聚合物层。第一聚合物层被配置为使得活化的光致变色化合物在不存在所述刺激的情况下在10分钟内，优选在5分钟内，最优选在1分钟内失活。

5. 发明公开

EP3368475A1 PREPARATION OF CARBON NANOTUBE SHELL MATERIALS 审中-公开
公开(公告)号：EP3368475A1
公开(公告)日：2018-09-05
申请号：EP16860487.4
申请日：2016-10-05
申请人： SABIC Global Technologies B.V.
发明人： ODEH, Ihab, N. , LIU, Yunyang
IPC分类号： C01B32/05 , H01M4/587 , B82Y40/00
CPC分类号： C01B32/16 , B01D53/944 , B01D53/945 , B01D2255/702 , B01J13/02 , B01J13/04 , B01J21/185 , B01J35/008 , B01J35/04 , B01J35/08 , B01J37/0018 , B01J37/084 , B82Y30/00 , B82Y40/00 , C01B32/158 , C01P2004/34 , H01G11/36 , H01M4/366 , H01M4/587 , H01M4/96
摘要： Methods of making a carbon nanotube material and uses thereof are described. The methods can include obtaining a carbon-containing polymeric matrix shell having a single discrete void space defined by the carbon-containing polymeric matrix shell or having an encapsulated core and subjecting the carbon-containing polymeric matrix shell to a graphitization process to form a shell having a carbon nanotube network from the matrix. The resulting carbon nanotube material includes a shell having a network of carbon nanotubes and either (i) a single discrete void space defined by the network of carbon nanotubes or (ii) the encapsulated core surrounded by the network of carbon nanotubes.

6. 发明公开

EP3218305A1 MULTI-LAYERED GRAPHENE MATERIAL HAVING A PLURALITY OF YOLK/SHELL STRUCTURES 审中-公开
标题翻译：具有多个YOLK / SHELL结构的多层石墨材料
公开(公告)号：EP3218305A1
公开(公告)日：2017-09-20
申请号：EP16864730.3
申请日：2016-10-04
申请人： SABIC Global Technologies B.V.
发明人： ODEH, Ihab, N. , LIU, Yunyang
IPC分类号： C01B32/182 , H01B1/04
CPC分类号： C01B31/0206 , B01J21/18 , B01J35/0013 , B01J35/002 , C01B31/04 , C01B33/126 , C01P2002/20 , C01P2004/64 , C01P2004/90 , H01B1/04 , H01M4/133 , H01M4/364 , H01M4/587 , H01M4/96
摘要： Multi-layered graphene materials and methods of making and use are described herein. A multi-layered graphene material can include a plurality of graphene layers having a plurality of intercalated nano- or microstructures that form a plurality of yolk/shell type structures. Each yolk/shell type structure can include at least two graphene layers that form a shell-like structure that encompasses a void space having at least one of the plurality of nano- or microstructures. The void space has a volume sufficient to allow for volume expansion of the at least one of the plurality of nano- or microstructures without deforming the shell-like structure.
摘要翻译：本文描述了多层石墨烯材料以及制造和使用的方法。多层石墨烯材料可以包括具有形成多个蛋黄/壳型结构的多个插入的纳米结构或微结构的多个石墨烯层。每个蛋黄/壳型结构可以包括形成壳状结构的至少两个石墨烯层，所述壳状结构围绕具有多个纳米结构或微结构中的至少一个的空隙空间。空隙空间具有足以允许多个纳米结构或微结构中的至少一个的体积膨胀而不会使壳状结构变形的体积。

7. 发明公开

EP3192099A1 METHODS FOR PRODUCING A THIN FILM FERROELECTRIC DEVICE USING A TWO-STEP TEMPERATURE PROCESS 有权
标题翻译：使用两步温度工艺生产薄膜铁电装置的方法
公开(公告)号：EP3192099A1
公开(公告)日：2017-07-19
申请号：EP15839892.5
申请日：2015-06-04
申请人： SABIC Global Technologies B.V.
发明人： PARK, Ji, Hoon , ALSHAREEF, Husam, N. , ODEH, Ihab, N. , KHAN, Mohd, A.
IPC分类号： H01L27/115
摘要： Methods for producing ferroelectric device are described. A method includes positioning an organic polymeric ferroelectric layer between two conductive materials to form a stack. The stack can be subjected to a 2-step heat treating process. The first heat treating step transforms the organic polymeric ferroelectric precursor to a ferroelectric material having ferroelectric hysteresis properties, and the second heat treating step densities the ferroelectric material to obtain the ferroelectric device. The thin film ferroelectric device can include a thin film ferroelectric capacitor, a thin film ferroelectric transistor, or a thin film ferroelectric diode.
摘要翻译：描述了用于制造铁电器件的方法。一种方法包括将有机聚合物铁电层置于两种导电材料之间以形成叠层。该堆可以经受两步热处理过程。第一热处理步骤将有机聚合物铁电体前体转变为具有铁电滞后性质的铁电材料，并且第二热处理步骤使铁电材料密度化以获得铁电体器件。薄膜铁电体器件可以包括薄膜铁电体电容器，薄膜铁电体晶体管或薄膜铁电体二极管。

8. 发明公开

EP3143650A1 NON-VOLATILE FERROELECTRIC MEMORY CELLS WITH MULTILEVEL OPERATION 审中-公开
标题翻译： NICHTFLÜCHTIGEFERROELEKTRISCHE SPEICHERZELLEN MIT MEHRSTUFIGEM BETRIEB
公开(公告)号：EP3143650A1
公开(公告)日：2017-03-22
申请号：EP15834150.3
申请日：2015-06-03
申请人： SABIC Global Technologies B.V.
发明人： PARK, Ji, Hoon , ALSHAREEF, Husam, N. , KHAN, Mohd, A. , ODEH, Ihab, N.
IPC分类号： H01L43/08 , G11C11/15
CPC分类号： G11C11/2275 , G11C11/221 , G11C11/2273 , G11C11/2277 , G11C11/5657 , H01L27/11509 , H01L27/20
摘要： Ferroelectric components, such as the ferroelectric field effect transistors (FeFETs), ferroelectric capacitors and ferroelectric diodes described above may be operated as multi-level memory cells as described by the present invention. Storing multiple bits of information in each multi-level memory cell may be performed by a controller coupled to an array of the ferroelectric components configured as ferroelectric memory cells. The controller may execute the steps of receiving a bit pattern for writing to a multi-level memory cell comprising a ferroelectric layer; selecting a pulse duration for applying a write pulse to the memory cell based, at least in part, on the received bit pattern; and applying at least one write pulse to the memory cell having the selected pulse duration, in which the at least one write pulse creates a remnant polarization within the ferroelectric layer that is representative of the received bit pattern.
摘要翻译：如上所述的铁电场效应晶体管（FeFET），铁电电容器和铁电二极管等铁电元件可以作为如本发明所述的多电平存储单元来操作。在每个多级存储器单元中存储多个位的信息可以由耦合到被配置为铁电存储器单元的铁电元件阵列的控制器来执行。控制器可以执行以下步骤：接收用于写入到包括铁电层的多层存储单元的位模式; 至少部分地基于所接收的位模式，选择用于将写入脉冲施加到存储器单元的脉冲持续时间; 以及向具有所选择的脉冲持续时间的存储单元施加至少一个写入脉冲，其中所述至少一个写入脉冲在所述铁电层内产生代表所接收的位模式的剩余极化。

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