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1. 发明公开

EP1973150A1 A (110) oriented silicon substrate and a bonded pair of substrates comprising said (110) oriented silicon substrate and corresponding methods of fabricating same 审中-公开
标题翻译：（110）-ausgerichtetes硅衬底和由该（110）取向的硅衬底基板的接合对以及它们的相应的制造方法
公开(公告)号：EP1973150A1
公开(公告)日：2008-09-24
申请号：EP07290338.8
申请日：2007-03-20
申请人： S.O.I. Tec Silicon on Insulator Technologies S.A.
发明人： Figuet, Christophe , Kononchuk, Oleg
IPC分类号： H01L21/20 , H01L21/205
CPC分类号： H01L21/02433 , C30B25/02 , C30B29/06 , H01L21/02381 , H01L21/0243 , H01L21/0245 , H01L21/02516 , H01L21/02532 , H01L21/02609 , H01L21/0262
摘要： The present invention relates to method of fabricating a (110) oriented silicon substrate and to a method of fabricating a bonded pair of substrates comprising such a (110) oriented silicon substrate. The invention further relates to a silicon substrate with (110) orientation and to a bonded pair of silicon substrates comprising a first silicon substrate with (100) orientation and a second silicon substrate with (110) orientation. It is the object of the present invention to provide methods and substrates of the above mentioned type with a high efficiency wherein the formed (110) substrate has at least near and at its surface virtually no defects. The object is solved by a method of fabricating a silicon substrate with (110) orientation and by a method of fabricating a bonded pair of silicon substrates, comprising the steps of providing a basic silicon substrate with (110) orientation, said basic silicon substrate having a roughness being equal or less than 0.15 nm RMS in a 2x2 μm 2 or a 10x10 μm 2 scan, and depositing epitaxially a silicon layer with (110) orientation on the basic silicon substrate at a pressure between about 27 hPa and about 267 hPa and at a temperature between about 1000°C and about 1200°C and using trichiorosilane or dichiorosilane as silicon precursor gas. The object is further solved by a silicon substrate with (110) orientation and by a bonded pair of silicon substrates, comprising a basic silicon substrate with (110) orientation, said basic silicon substrate having a roughness being equal or less than 0.15 nm RMS in a 2x2 μm 2 or a 10x10 μm 2 scan, and an epitaxial silicon layer with (110) orientation grown on the basic silicon substrate.
摘要翻译：本发明涉及一种制造具有（110）取向的硅基板的方法和一种制造接合对基板，包括求（110）取向的硅衬底的方法。本发明还涉及与（110）取向和硅衬底的接合对包括具有（100）取向和（110）取向的第二硅衬底的第一硅衬底的硅衬底。它是本发明的目的是提供一种上述类型的方法和基板以高效率worin所形成的（110）衬底具有至少接近，并在其表面几乎没有缺陷。该目的是通过制造具有（110）取向的硅衬底的方法和通过制造一接合对硅衬底的方法，包括提供一个基本的硅衬底具有（110）取向的步骤的方法来解决，所述具有碱性的硅衬底的粗糙度为等于或小于0.15纳米RMS中的2×2¼m2或10×10¼m2扫描，并在压力约27千帕和HPA和大约267外延沉积与在基本硅衬底（110）取向的硅层在约1000℃至约1200℃，并使用trichiorosilane或dichiorosilane作为硅前体气体之间的温度。该目的进一步通过与（110）取向，并通过硅衬底的接合对包括具有（110）取向的基本硅衬底的硅衬底解决的，所述具有粗糙度基本硅衬底为等于或小于零时15纳米RMS 2×2¼m2或10×10¼m2扫描，并用生长在基本硅衬底（110）取向的外延硅层上。

2. 发明授权

EP2037288B1 Volume lifetime measurement 有权转让
标题翻译： Volumenlebensdauermessung
公开(公告)号：EP2037288B1
公开(公告)日：2011-06-22
申请号：EP07291091.2
申请日：2007-09-11
申请人： S.O.I. TEC Silicon on Insulator Technologies
发明人： Allibert, Frederic , Kononchuk, Oleg
IPC分类号： G01R31/265 , H01L21/66
CPC分类号： G01R31/2656 , G01R31/2648

3. 发明公开

EP1986229A1 Method for manufacturing compound material wafer and corresponding compound material wafer 审中-公开
标题翻译：对于由复合材料制成，并相应晶片的晶片制造过程由复合材料制成的
公开(公告)号：EP1986229A1
公开(公告)日：2008-10-29
申请号：EP07290528.4
申请日：2007-04-27
申请人： S.O.I. TEC Silicon on Insulator Technologies
发明人： Reynaud, Patrick , Kononchuk, Oleg
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/02032
摘要： The invention relates to methods for manufacturing compound material wafers, in particular silicon on insulator type wafers, comprising the steps of providing a donor substrate, forming an insulating layer, providing a handle substrate, creating a predetermined splitting area in the donor substrate, attaching the donor substrate to the handle substrate and detaching at the predetermined splitting area to achieve the compound material wafer. In order to be able to more often reuse the remainder of the donor substrate in subsequent manufacturing runs, the invention is characterized by the fact that the insulating layer provided on the donor substrate has a maximum thickness of 500 Å, or that the insulating layer is provided by deposition or only on the handle substrate. In addition, a silicon on silicon type wafer fabrication method is also disclosed.
摘要翻译：本发明涉及一种用于制造复合材料晶片，在绝缘体上型晶片特别是硅，其包括提供供体基板的步骤中，绝缘层的形成，提供了一个手柄基板，在所述供体基板创建预定的分离区，在安装方法供体基底，以在所述预定的分离区在手柄底物和拆卸，以实现复合材料晶片。为了能够更经常重用在随后的制造运行的供体基底的剩余部分，本发明是由factthat特点设置在供体基底的绝缘层具有500埃的最大厚度，或没有绝缘层是通过沉积或仅在手柄基板提供。此外，在硅型晶片的制造方法的硅因而游离缺失盘。

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