专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

EP0337556B1 Method of manufacturing a semiconductor body 失效
标题翻译：一种制造半导体主体的方法。
公开(公告)号：EP0337556B1
公开(公告)日：1993-11-03
申请号：EP89200875.6
申请日：1989-04-07
申请人： Philips Electronics N.V.
发明人： Haisma, Jan , Adema, Cornelis Lucas , De Bruin, Johan Gerrit , Michielsen, Theodorus Martinus , Spierings, Gijsbertus Adrianus
IPC分类号： H01L21/18 , H01L21/302 , H01L21/306
CPC分类号： H01L21/187 , H01L21/2007 , H01L21/304 , Y10S148/012

3. 发明授权

EP0274801B1 Method of manufacturing a semiconductor device of the "semiconductor on insulator" type 失效转让
标题翻译： “半导体绝缘体”型半导体器件的制造方法
公开(公告)号：EP0274801B1
公开(公告)日：1992-07-29
申请号：EP87202644.8
申请日：1987-12-29
申请人： Philips Electronics N.V.
发明人： Alexander, Elizabeth Maria Leontina , Haisma, Jan , Michielsen, Theodorus Martinus , van der Velden, Johannes Wilhelmus Adrianus , Verhoeven, Johannes Franciscus Cornelis Maria
IPC分类号： H01L21/76
CPC分类号： H01L21/76297 , Y10S148/135 , Y10S148/164

4. 发明公开

EP0209173A1 Method of manufacturing semiconductor devices comprising the mechanical connection of two bodies 有权转让
标题翻译：一种用于通过这两个机构的机械连接的装置的生产半导体器件的过程。
公开(公告)号：EP0209173A1
公开(公告)日：1987-01-21
申请号：EP86201062.6
申请日：1986-06-18
申请人： Philips Electronics N.V.
发明人： Haisma, Jan , Michielsen, Theodorus Martinus , Pals, Jan Albertus
IPC分类号： H01L21/76 , H01L21/20
CPC分类号： H01L25/50 , H01L21/2007 , H01L21/76251 , H01L21/8221 , H01L24/24 , H01L24/26 , H01L24/82 , H01L24/83 , H01L25/0657 , H01L2224/24145 , H01L2224/8319 , H01L2224/8385 , H01L2225/06551 , H01L2924/00011 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01023 , H01L2924/01033 , H01L2924/01039 , H01L2924/01049 , H01L2924/0105 , H01L2924/01057 , H01L2924/01061 , H01L2924/01082 , H01L2924/07802 , H01L2924/10329 , H01L2924/12033 , H01L2924/12041 , H01L2924/12042 , H01L2924/13091 , H01L2924/14 , H01L2924/19041 , Y10S148/012 , H01L2224/80001 , H01L2924/00
摘要： A method for manufacturing a semiconductor device comprising at least a support body (1) and a monocrystalline semiconductor body (6, 7), in which both bodies are provided with at least one flat optically smooth surface obtained by means of bulkreducing polishing (mirror polishing) and at least the semiconductor body (6, 7) is then provided at the optically smooth surface with an electrically insulating layer (4), at least the electrically insulating layer on the semiconductor body being subjected to a bonding activating operation, whereupon both bodies (1;6,7), after their flat surfaces have been cleaned, are contacted with each other in a dust-free atmosphere in order to obtain a rigid mechanical connection, after which they are subjected to a heat treatment of at least 350 °C, whereupon the semi- conductor body (6, 7) is etched to a thin layer (7) having a predetermined value lying between 0.05 and 100 µm.

5. 发明公开

EP0655424A1 Method of bonding two optical surfaces together, optical assembly thus formed, and particle-optical apparatus comprising such an assembly 失效
标题翻译：接合两个光学表面的方法，制备光学由其组成，并且具有这样的组成粒子光学设备。
公开(公告)号：EP0655424A1
公开(公告)日：1995-05-31
申请号：EP94203346.5
申请日：1994-11-17
申请人： PHILIPS ELECTRONICS N.V.
发明人： Haisma, Jan , Troost, Kars Zeger , Groenen, Johannes Josephus Cornelis , Michielsen, Theodorus Martinus
IPC分类号： C03B37/15 , C03C25/00
CPC分类号： C03C25/70 , C03B37/15 , C03C25/005
摘要： A method of bonding together two optical surfaces, such as a scintillator plate and a plate which is formed by the ends of a bundle of optical fibres. An assembly of this kind can be used in an electron microscope in order to convert the electron image into an image of visible light which is transported, for example to a detector. It is specified that the two surfaces to be bonded must be bonded rigidly to one another without an intermediate layer and without a noticeable intermediate space( i.e. a space much smaller than the wavelength of the visible light). In accordance with the invention, this is achieved by optically polishing and cleaning the surfaces to be bonded, after which they are arranged one against the other without an intermediate material, the contacting surfaces then being subjected to a thermal treatment at a temperature beyond the fusion temperature but below the softening temperature of the material of each of the surfaces.
摘要翻译：两个光学表面粘合在一起的方法，检查作为闪烁体板和板的所有其通过光学纤维束的端部形成。这种类型的组件可以以电子显微镜，以电子图像转换为可见光的图像全部被输送，例如到检测器中使用英寸它被指定做的两个表面被粘合必须刚性地彼此结合而不会在中间层和不具有明显的中间空间（即空间比可见光的波长小很多）。在符合本发明雅舞蹈，这是通过光学抛光和清洗待键合的表面上，afterwhich它们在中间材料布置成一个抵靠另一个没有实现，该接触表面然后经受热处理以超过熔化温度温度但低于每个表面的材料的软化温度。

6. 发明公开

EP0337556A1 Method of manufacturing a semiconductor body 失效
标题翻译：韦尔法罕zum赫斯特伦
公开(公告)号：EP0337556A1
公开(公告)日：1989-10-18
申请号：EP89200875.6
申请日：1989-04-07
申请人： Philips Electronics N.V.
发明人： Haisma, Jan , Adema, Cornelis Lucas , De Bruin, Johan Gerrit , Michielsen, Theodorus Martinus , Spierings, Gijsbertus Adrianus
IPC分类号： H01L21/18 , H01L21/302 , H01L21/306
CPC分类号： H01L21/187 , H01L21/2007 , H01L21/304 , Y10S148/012
摘要： A method of manufacturing a silicon-on-insulator semiconductor body is characterized by the steps consisting in that a carrier body is temporarily connected to a supporting body with accurately flat and parallel major surfaces and having a thickness of at least 1/8 of the largest dimension of the carrier body, in that the free major surface of the carrier body is mechanically polished to a precision of at least ½ µm flatness, in that the carrier body is detached from the supporting body and the polished major surface is temporarily connected to the supporting body and the other major surface of the carrier body is mechanically polished to a precision of at least ½ µm flatness and a parallelism between the major surfaces of at least ½ µm whereupon a semiconductor body is connected through a major surface permanently to a major surface of the carrier body, in that then the semiconductor body is mechanically ground to a thickness of at least 50 µm larger than the desired ultimate layer thickness and is then alternately polished tribochemically and mechanically to a thickness of about 10 µm larger than the ultimately desired layer thickness, and in that there is ultimately polished tribochemically until the desired layer thickness of the semiconductor body is attained.
摘要翻译：一种制造绝缘体上半导体硅体的方法的特征在于包括以下步骤：承载体临时连接到具有准确平坦且平行的主表面的支撑体，并且其厚度至少为最大的1/8的厚度承载体的尺寸，因为承载体的自由主表面被机械抛光至至少1/2平方度的精度，因为载体主体从支撑体脱离并且抛光的主表面暂时连接到支撑体并且承载体的另一个主表面被机械抛光至至少1/2平方度的精度和至少1/2μm之间的主表面之间的平行度，由此连接半导体主体通过主表面永久地到载体主体的主表面，然后将半导体主体机械地研磨成比期望的超大的至少50微米的厚度然后将它们交替地抛光至摩擦化学和机械地抛光至比最终期望的层厚度大10微米的厚度，并且最终进行摩擦化学抛光，直至达到半导体主体的所需层厚度。

7. 发明公开

EP0274801A2 Method of manufacturing a semiconductor device of the "semiconductor on insulator" type 失效转让
标题翻译： Verfahren zur Herstellung einer Halbleiteranordnung vom Typ“Halbleiter auf Isolator”。
公开(公告)号：EP0274801A2
公开(公告)日：1988-07-20
申请号：EP87202644.8
申请日：1987-12-29
申请人： Philips Electronics N.V.
发明人： Alexander, Elizabeth Maria Leontina , Haisma, Jan , Michielsen, Theodorus Martinus , van der Velden, Johannes Wilhelmus Adrianus , Verhoeven, Johannes Franciscus Cornelis Maria
IPC分类号： H01L21/76
CPC分类号： H01L21/76297 , Y10S148/135 , Y10S148/164
摘要： In a method of manufacturing a semiconductor device of the "semiconductor on insulator" type comprising at least one carrier body and a monocrystalline semiconductor body, in a major surface (2) of a monocrystalline semiconductor body (1) grooves (3) are provided having a predetermined depth. The surface provided with grooves is coated with a layer (4) of material resistant to polishing; this layer is coated with a layer (5) of a chemomechanically polishable material having a layer thickness exceeding the groove depth, the latter layer (5) being polished to flatness and smoothness. The polished surface of the semiconductor body (1) is connected to a smooth flat major surface of a carrier body (6). Subsequently, the semiconductor body (1) is made thin, at least the last part of this operation consisting of a polishing step, which terminates on the layer (4) of material resistant to polishing so that mutually insulated "semiconductor on insulator" regions are obtained, the thickness of the semiconductor regions being equal to the depth of the grooves.
摘要翻译：在制造包括至少一个载体和单晶半导体本体的“半导体绝缘体”型半导体器件的方法中，在单晶半导体本体（1）的主表面（2）中设置有凹槽（3），其具有预定深度。设置有凹槽的表面涂覆有耐抛光的材料层（4）; 该层涂覆有具有超过槽深度的层厚度的化学机械抛光材料的层（5），后一层（5）被抛光成平坦度和平滑度。半导体本体（1）的抛光表面连接到载体（6）的平滑的主表面。随后，使半导体本体（1）变薄，该操作的至少最后一部分由抛光步骤组成，抛光步骤终止在耐抛光的材料层（4）上，以使相互绝缘的“绝缘体上半导体”区域半导体区域的厚度等于凹槽的深度。

8. 发明公开

EP0232935A1 Method of manufacturing a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：EP0232935A1
公开(公告)日：1987-08-19
申请号：EP87200112.8
申请日：1987-01-26
申请人： Philips Electronics N.V.
发明人： Haisma, Jan , Alting, Cornelis Leendert , Michielsen, Theodorus Martinus
IPC分类号： H01L21/18 , H01L21/268
CPC分类号： H01L21/268 , H01L21/2007
摘要： In a method of manufacturing a semiconductor device, at least a support body (1) and a monocrystalline semiconductor body (2) are provided with at least one flat optically smooth surface obtained by means of bulk-reducing polishing (mirror polishing), while at least the semiconductor body is provided at the optically smooth surface with an oxide layer (3). The two bodies (1 and 2) are brought into contact with each other in a dust-free atmosphere after their flat surfaces have been cleaned in order to obtain a mechanical connection. Before the bodies are brought into contact with each other, at least the oxide layer (3) on the semiconductor body (2) is subjected to a bonding-activating operation, while after a connection has been formed between the surfaces, radiation (5) of a laser is focused on the connection surface of the two bodies and material of at least the semiconductor body is molten locally near the connection surface by means of the laser radiation. After solidification, a locally fused connection has been established between the two bodies. The semiconductor body (2) is formed from a material admitting a sufficient oxygen diffusion.
摘要翻译：在制造半导体器件的方法中，至少一个支撑体（1）和单晶半导体本体（2）设置有至少一个通过体积减小抛光（镜面抛光）获得的平坦光学平滑表面，而在至少半导体本体在光学平滑表面处设有氧化物层（3）。两个物体（1和2）在它们的平坦表面已经被清洁之后在无尘环境中彼此接触，以获得机械连接。在本体彼此接触之前，至少半导体本体（2）上的氧化物层（3）经受结合激活操作，而在表面之间形成连接之后，辐射（5）的激光聚焦在两个物体的连接表面上，并且至少半导体物体的材料借助于激光辐射在连接表面附近局部熔化。凝固后，两个物体之间建立了局部熔合连接。半导体本体（2）由允许充分氧扩散的材料形成。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式