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1. 发明公开

EP3106921A1 FILM-FORMING COMPOSITION INCLUDING FLUORINE-CONTAINING SURFACTANT 审中-公开
标题翻译：迷迭香ZUSAMMENSETZUNG MIT FLUORHALTIGEM TENSID
公开(公告)号：EP3106921A1
公开(公告)日：2016-12-21
申请号：EP15749601.9
申请日：2015-01-30
申请人： Nissan Chemical Industries, Ltd.
发明人： UMEZAKI, Makiko , KARASAWA, Ryo , SHIGAKI, Shuhei , MIZUOCHI, Ryuta
IPC分类号： G03F7/11 , C08L33/04 , C08L101/00 , C08L101/04
CPC分类号： C09D133/12 , C08F220/14 , C08L33/14 , C08L101/00 , C08L101/04 , G03F7/0752 , G03F7/094 , G03F7/11 , G03F7/16 , G03F7/20 , G03F7/30 , H01L21/0276 , C08F212/14
摘要： There is provided a film with reduced formation of an edge reservoir at a periphery of a film in which the edge reservoir causes an unnecessary residue that cannot be removed by an etching process, and a method for forming the film. A film forming composition for use in a lithography process, the film forming composition comprising a surfactant containing a polymer and an oligomer having a C 3-5 perfluoroalkyl partial structure. The perfluoroalkyl partial structure preferably has a carbon number of 4. The perfluoroalkyl partial structure may further include an alkyl partial structure, and the polymer and the oligomer are preferably a (meth)acrylate polymer and a (meth)acrylate oligomer, respectively. The surfactant is contained in an amount of 0.0001% by mass to 1.5% by mass based on the total solid content of the film forming composition. The film forming composition further comprises a coating film resin, and the coating film resin is a novolac resin, a condensation epoxy resin, a (meth)acylic resin, a polyether-based resin, or a silicon-containing resin, etc. The formed film can be used as a resist underlayer film or a resist overlayer film.
摘要翻译：提供了一种薄膜，其在边缘储存器的周围形成边缘储存器，其中边缘储存器引起不能通过蚀刻工艺去除的不必要的残留物，以及用于形成膜的方法。一种用于光刻工艺的成膜组合物，所述成膜组合物包含含有聚合物的表面活性剂和具有C 3-5全氟烷基部分结构的低聚物。全氟烷基部分结构优选碳数为4.全氟烷基部分结构还可以包括烷基部分结构，聚合物和低聚物分别优选为（甲基）丙烯酸酯聚合物和（甲基）丙烯酸酯低聚物。表面活性剂的含量相对于成膜组合物的总固体成分为0.0001质量％〜1.5质量％。成膜组合物还包含涂膜树脂，涂膜树脂是酚醛清漆树脂，缩合环氧树脂，（甲基）酰基树脂，聚醚基树脂或含硅树脂等。形成的膜可以用作抗蚀剂下层膜或抗蚀剂覆盖膜。

2. 发明公开

EP2650729A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM CONTAINING HYDROXYL GROUP-CONTAINING CARBAZOLE NOVOLAC RESIN 审中-公开
标题翻译： ZUSAMMENSETZUNG ZUR BILDUNG EINER LACKUNTERBESCHICHTUNG MIT EINEM HYDROXYLGRUPPENHALTIGEN CARBAZOL-NOVOLAC-HARZ
公开(公告)号：EP2650729A1
公开(公告)日：2013-10-16
申请号：EP11846547.5
申请日：2011-12-05
申请人： Nissan Chemical Industries, Ltd.
发明人： SHINJO, Tetsuya , OKUYAMA, Hiroaki , HASHIMOTO, Keisuke , SOMEYA, Yasunobu , KARASAWA, Ryo , KATO, Masakazu
IPC分类号： G03F7/11
CPC分类号： H01L21/3081 , C09D139/04 , G03F7/0045 , G03F7/091 , G03F7/094 , H01L21/0271
摘要： There is provided a composition for forming a resist underlayer film having heat resistance for use in a lithography process in semiconductor device production. A composition for forming a resist underlayer film, comprising a polymer that contains a unit structure of formula (1) and a unit structure of formula (2) in a proportion of of 3 to 97:97 to 3 in molar ratio:

A method for producing a semiconductor device, comprising the steps of: forming an underlayer film using the composition for forming a resist underlayer film on a semiconductor substrate; forming a hard mask on the underlayer film; further forming a resist film on the hard mask; forming a patterned resist film by irradiation of light or electron beams and developing; etching the hard mask according to the patterned resist film; etching the underlayer film according to the patterned hard mask; and processing the semiconductor substrate according to the patterned underlayer film.
摘要翻译：提供一种用于形成半导体器件制造中用于光刻工艺的具有耐热性的抗蚀剂下层膜的组合物。一种形成抗蚀剂下层膜的组合物，其含有以式（1）的单元结构和式（2）的单元结构的聚合物的摩尔比为3至97:97至3的一种方法。制造半导体器件，包括以下步骤：使用在半导体衬底上形成抗蚀剂下层膜的组合物形成下层膜; 在下层膜上形成硬掩模; 进一步在硬掩模上形成抗蚀剂膜; 通过光或电子束的照射形成图案化的抗蚀剂膜并显影; 根据图案化的抗蚀剂膜蚀刻硬掩模; 根据图案化的硬掩模蚀刻下层膜; 以及根据图案化的底层膜处理半导体衬底。

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