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1. 发明公开

EP0250603A1 PROCESS FOR FORMING THIN FILM OF COMPOUND SEMICONDUCTOR 失效
标题翻译：形成复合半导体薄膜的方法
公开(公告)号：EP0250603A1
公开(公告)日：1988-01-07
申请号：EP87903543.4
申请日：1986-12-09
申请人： Nippon Telegraph and Telephone Corporation
发明人： KOBAYASHI, Naoki , SUGIURA, Hideo , HORIKOSHI, Yoshiji
IPC分类号： H01L21/203
CPC分类号： H01L21/02505 , C30B23/02 , C30B29/42 , C30B29/68 , H01L21/02395 , H01L21/02463 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/02631 , Y10S148/065 , Y10S148/072 , Y10S148/11 , Y10S148/16 , Y10S148/169
摘要： A process for forming a thin film of a compound semiconductor, which comprises forming a group III-V compound semiconductor by feeding a group III element and a group V element, each in an atomic or molecular state, onto a substrate placed in a vacuum chamber and heated, with the feed of the group V element being reduced to such a minute amount in at least a certain period of the growth of the group III-V compound that the group III-V compound semiconductor does not grow during which period the group III element is fed onto the substrate. This process enables a highly pure group III-V compound epitaxial layer having less crystal defect and smooth development surface and heterojunction interface on an atomic level to grow over a wide range of temperatures. This process is effective in preparing various optical devices, super-high speed electronic devices, etc.
摘要翻译：一种形成化合物半导体薄膜的方法，其包括通过将各自处于原子或分子状态的III族元素和V族元素供给到置于真空室中的衬底上来形成III-V族化合物半导体并加热，在III-V族化合物半导体不生长的III-V族化合物生长的至少一定时期内，V族元素的进料被减少到这样微小的量，在此期间该族 III元件被馈送到基板上。该工艺能够在很宽的温度范围内生长具有较少晶体缺陷和平滑的显影表面以及原子水平的异质结界面的高纯度III-V族化合物外延层。该过程在制备各种光学器件，超高速电子器件等方面是有效的。

2. 发明授权

EP0250603B1 PROCESS FOR FORMING THIN FILM OF COMPOUND SEMICONDUCTOR 失效
标题翻译：方法形成具有半导体材料的薄膜。
公开(公告)号：EP0250603B1
公开(公告)日：1994-07-06
申请号：EP87903543.4
申请日：1986-12-09
申请人： Nippon Telegraph and Telephone Corporation
发明人： KOBAYASHI, Naoki , SUGIURA, Hideo , HORIKOSHI, Yoshiji
IPC分类号： H01L21/203
CPC分类号： H01L21/02505 , C30B23/02 , C30B29/42 , C30B29/68 , H01L21/02395 , H01L21/02463 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/02631 , Y10S148/065 , Y10S148/072 , Y10S148/11 , Y10S148/16 , Y10S148/169
摘要： This is a process for forming a thin film of a group III-V compound semiconductor on the heated surface of a substrate placed in a vacuum chamber. At least one group III element and at least one group V element, each in an atomic or molecular state, are fed onto the substrate to form the group III-V cpd. semiconductor film. The conditions for feeding the elements are specified as follows: The feed of the group V element, in at least a certain period of the growth of the group III-V cpd., is reduced to so minute an amount that during this period the group III-V cpd. semiconductor does not grow while at the same time vaporisation of the group V element from the group III-V cpd. does not take place. During a certain period feeding of the group V element may be stopped completely while only the group III element is fed onto the substrate. Normal feeding of the group III and V elements and reduced feeding of the group V element may be alternated. The amount of the group III element fed at one time is sufficient to form between 90 and 110% of one atomic layer.

3. 发明授权

EP0394462B1 METHOD OF FORMING A SEMICONDUCTOR THIN FILM AND APPARATUS THEREFOR 失效
标题翻译：一种用于形成半导体薄膜及其设备。
公开(公告)号：EP0394462B1
公开(公告)日：1995-05-24
申请号：EP89909240.7
申请日：1989-08-15
申请人： Nippon Telegraph and Telephone Corporation
发明人： SUGIURA, Hideo , YAMADA, Takeshi , IGA, Ryuzo
IPC分类号： H01L21/205 , C30B25/10 , C30B23/02
CPC分类号： C30B23/02 , B01J2219/1942 , C30B25/105 , H01L21/02381 , H01L21/02392 , H01L21/02395 , H01L21/02546 , H01L21/0262 , H01L21/02631 , H01L21/02639 , Y10S117/904
摘要： A method and an apparatus for forming a semiconductor thin film. The substrate (10) is maintained at a suitable temperature, and a laser beam of an energy smaller than the energy of photon that directly decomposes an organic metal is permitted to fall on a position corresponding to a desired pattern on the substrate (10) during the MOMBE growth in order to select the promotion or suppression of the rate for growing a chemical semiconductor thin film. A compound semiconductor thin film having a fine pattern with complex ruggedness can be formed on the substrate (10). The MOMBE apparatus (1), a source of laser beam (11), and optical systems (12, 31) for guiding the laser beam, are arranged on a vibration-free plate (30) to maintain always constant the relative positions of the source of laser beam (11), optical systems (12, 31) for laser beam irradiation, and substrate (10) in the vacuum vessel (1), such that a fine pattern can be formed.

4. 发明公开

EP0394462A1 METHOD OF FORMING A SEMICONDUCTOR THIN FILM AND APPARATUS THEREFOR 失效
标题翻译： VERFAHREN ZUR BILDUNG EINESHALBLEITERDÜNNFILMESUND VORRICHTUNGDAFÜR。
公开(公告)号：EP0394462A1
公开(公告)日：1990-10-31
申请号：EP89909240.7
申请日：1989-08-15
申请人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION
发明人： SUGIURA, Hideo , YAMADA, Takeshi , IGA, Ryuzo
IPC分类号： H01L21/205 , C30B25/10 , C30B23/02
CPC分类号： C30B23/02 , B01J2219/1942 , C30B25/105 , H01L21/02381 , H01L21/02392 , H01L21/02395 , H01L21/02546 , H01L21/0262 , H01L21/02631 , H01L21/02639 , Y10S117/904
摘要： A method and an apparatus for forming a semiconductor thin film. The substrate (10) is maintained at a suitable temperature, and a laser beam of an energy smaller than the energy of photon that directly decomposes an organic metal is permitted to fall on a position corresponding to a desired pattern on the substrate (10) during the MOMBE growth in order to select the promotion or suppression of the rate for growing a chemical semiconductor thin film. A compound semiconductor thin film having a fine pattern with complex ruggedness can be formed on the substrate (10). The MOMBE apparatus (1). a source of laser beam (11), and optical systems (12, 31) for guiding the laser beam, are arranged on a vibration-free plate (30) to maintain always constant the relative positions of the source of laser beam (11), optical systems (12, 31) for laser beam irradiation, and substrate (10) in the vacuum vessel (1), such that a fine pattern can be formed.
摘要翻译：形成半导体薄膜包括保持在合适温度的衬底（10）。并且允许小于直接分解有机金属的光子的能量的能量的激光束落在对应的位置上。在MOMBE生长期间在衬底（10）上的期望图案，以便选择用于生长化学半导体薄膜的速率的位置或抑制。一个cpd 可以在基板（10）上形成具有复杂凹凸的精细图案的半导体薄膜。 MOMBE appts。（1）包括激光束源（11）和用于引导布置在无振动板（30）上的激光束的光学系统（12,31），以保持激光束源（11）的恒定的相对位置，，用于激光束照射的光学系统（12,31）和真空容器（1）中的基板（10），使得可以形成精细图案。

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