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    • 2. 发明公开
    • PLASMA PROCESSING APPARATUS
    • Einrichtung zur Plasmabehandlung
    • EP1096554A1
    • 2001-05-02
    • EP99923919.7
    • 1999-06-04
    • TOKYO ELECTRON LIMITEDGoto, NaohisaAndo, Makoto
    • GOTO, NaohisaANDO, MakotoISHII, Nobuo
    • H01L21/3065
    • H01J37/3222H01J37/32192
    • In a plasma processing system, microwaves generated by a microwave generator (86) are guided to a plane antenna (62) to introduce the microwaves, which are attenuated exponentially, into a processing vessel (22) in which an object to be processed (W) is subjected to a plasma process. A microwave absorbing means (96) is disposed in a peripheral portion of the plane antenna (62) to absorb the microwaves propagating from a central portion of the plane antenna and to control the amount of reflected microwave. Thus the amount of the microwaves reflected toward the central portion of the plane antenna (62) by a peripheral portion of the plane antenna (62) is reduced to some extent so that electromagnetic field intensity is distributed uniformly.
    • 在等离子体处理系统中,由微波发生器(86)产生的微波被引导到平面天线(62),以将被指数地衰减的微波引入处理容器(22)中,在该处理容器(22)中,待加工物体(W )进行等离子体处理。 微波吸收装置(96)设置在平面天线(62)的周边部分中,以吸收从平面天线的中心部分传播的微波并控制反射微波的量。 因此,通过平面天线(62)的周边部分朝向平面天线(62)的中心部分反射的微波的量减少到一定程度,使得电磁场强度均匀分布。