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1. 发明公开

EP3349246A1 BONDING WIRE FOR SEMICONDUCTOR DEVICE 有权转让
公开(公告)号：EP3349246A1
公开(公告)日：2018-07-18
申请号：EP18154972.6
申请日：2016-05-19
申请人： Nippon Micrometal Corporation , Nippon Steel & Sumikin Materials Co., Ltd.
发明人： YAMADA, Takashi , ODA, Daizo , HAIBARA, Teruo , OISHI, Ryo , SAITO, Kazuyuki , UNO, Tomohiro
IPC分类号： H01L23/49 , C22C9/00
摘要： There is provided a bonding wire for a semiconductor device, the bonding wire including a Cu alloy core material and a Pd coating layer formed on a surface thereof, achieving simultaneously improvement in bonding reliability of a ball bonded part in high temperature and an strength ratio (= ultimate strength/0.2% offset yield strength) of 1.1 to 1.6.
Containing an element that provides bonding reliability in a high-temperature environment improves the bonding reliability of the ball bonded part in high temperature. Furthermore, making an orientation proportion of a crystal orientation angled at 15 degrees or less to a wire longitudinal direction among crystal orientations in the wire longitudinal direction 30% or more when measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, and making an average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire 0.9 to 1.5 µm provides a strength ratio of 1.6 or less.

2. 发明公开

EP3282473A1 BONDING WIRE FOR SEMICONDUCTOR DEVICE 有权转让
标题翻译：半导体器件的接合线
公开(公告)号：EP3282473A1
公开(公告)日：2018-02-14
申请号：EP16811374.4
申请日：2016-05-19
申请人： Nippon Micrometal Corporation , Nippon Steel & Sumikin Materials Co., Ltd.
发明人： YAMADA, Takashi , ODA, Daizo , HAIBARA, Teruo , OISHI, Ryo , SAITO, Kazuyuki , UNO, Tomohiro
IPC分类号： H01L21/60
摘要： There is provided a bonding wire for a semiconductor device, the bonding wire including a Cu alloy core material and a Pd coating layer formed on a surface thereof, achieving simultaneously improvement in bonding reliability of a ball bonded part in high temperature and an strength ratio (= ultimate strength/0.2% offset yield strength) of 1.1 to 1.6.
Containing an element that provides bonding reliability in a high-temperature environment improves the bonding reliability of the ball bonded part in high temperature. Furthermore, making an orientation proportion of a crystal orientation angled at 15 degrees or less to a wire longitudinal direction among crystal orientations in the wire longitudinal direction 30% or more when measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, and making an average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire 0.9 to 1.5 µm provides a strength ratio of 1.6 or less.
摘要翻译：提供一种用于半导体器件的接合线，所述接合线包括Cu合金芯材和在其表面上形成的Pd涂层，同时实现高温下球接合部的接合可靠性的提高和强度比（ =极限强度/ 0.2％偏移屈服强度）为1.1至1.6。含有在高温环境下提供接合可靠性的元件提高球接合部在高温下的接合可靠性。另外，在测量芯材截面上的晶体取向时，将在线材长度方向上的结晶取向中的晶体取向<100>的取向比例设定为相对于线材长度方向15°以下的角度为30％以上垂直于键合线的线轴的方向，并且使得在与键合线的线轴垂直的方向上的芯材的横截面中的平均晶粒尺寸为0.9至1.5μm，提供1.6的强度比或更少。

3. 发明公开

EP3136435A1 BONDING WIRE FOR SEMICONDUCTOR DEVICE 有权转让
标题翻译：半导体器件的接合线
公开(公告)号：EP3136435A1
公开(公告)日：2017-03-01
申请号：EP15866376.5
申请日：2015-07-23
申请人： Nippon Micrometal Corporation , Nippon Steel & Sumikin Materials Co., Ltd.
发明人： YAMADA, Takashi , ODA, Daizo , OISHI, Ryo , UNO, Tomohiro
IPC分类号： H01L23/49 , C22C9/00
CPC分类号： H01L24/45 , B23K35/0227 , B23K35/302 , B23K2201/40 , C22C5/04 , C22C9/00 , C22C9/04 , C22C9/06 , H01L23/49582 , H01L24/05 , H01L24/43 , H01L24/48 , H01L24/85 , H01L2224/05624 , H01L2224/43 , H01L2224/43125 , H01L2224/4321 , H01L2224/43825 , H01L2224/43848 , H01L2224/43986 , H01L2224/45 , H01L2224/45005 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/45155 , H01L2224/45164 , H01L2224/45169 , H01L2224/45565 , H01L2224/45572 , H01L2224/45644 , H01L2224/45664 , H01L2224/45847 , H01L2224/45944 , H01L2224/45964 , H01L2224/4801 , H01L2224/48011 , H01L2224/48247 , H01L2224/48463 , H01L2224/48465 , H01L2224/48507 , H01L2224/48844 , H01L2224/48864 , H01L2224/78 , H01L2224/78301 , H01L2224/85 , H01L2224/85045 , H01L2224/85075 , H01L2224/85181 , H01L2224/85203 , H01L2224/85207 , H01L2224/85444 , H01L2224/85464 , H01L2924/00011 , H01L2924/10253 , H01L2924/15738 , H01L2924/15763 , H01L2924/35121 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/00014 , H01L2924/01046 , H01L2924/01078 , H01L2924/01029 , H01L2924/01079 , H01L2924/01028 , H01L2924/01015 , H01L2924/01005 , H01L2924/01004 , H01L2924/01026 , H01L2924/01012 , H01L2924/01022 , H01L2924/0103 , H01L2924/01047 , H01L2924/01014 , H01L2924/01202 , H01L2924/01203 , H01L2924/01204 , H01L2924/00015 , H01L2924/20751 , H01L2924/20752 , H01L2924/01007 , H01L2924/20654 , H01L2924/20655 , H01L2924/20656 , H01L2924/013 , H01L2924/00013 , H01L2924/00012 , H01L2924/00 , H01L2924/01033 , H01L2924/01083
摘要： There is provided a bonding wire for a semiconductor device including a coating layer having Pd as a main component on a surface of a Cu alloy core material and a skin alloy layer containing Au and Pd on a surface of the coating layer, the bonding wire further improving 2nd bondability on a Pd-plated lead frame and achieving excellent ball bondability even in a high-humidity heating condition. The bonding wire for a semiconductor device including the coating layer having Pd as a main component on the surface of the Cu alloy core material and the skin alloy layer containing Au and Pd on the surface of the coating layer has a Cu concentration of 1 to 10 at% at an outermost surface thereof and has the core material containing either or both of Pd and Pt in a total amount of 0.1 to 3.0% by mass, thereby achieving improvement in the 2nd bondability and excellent ball bondability in the high-humidity heating condition. Furthermore, a maximum concentration of Au in the skin alloy layer is preferably 15 at% to 75 at%.
摘要翻译：提供一种用于半导体器件的接合线，该接合线包括在Cu合金芯材的表面上具有Pd作为主要成分的涂层和在该涂层的表面上包含Au和Pd的表皮合金层，该接合线进一步即使在高湿度加热条件下，也改善了镀钯引线框架上的第二焊接性并实现优异的球焊性。包括在Cu合金芯材表面上具有Pd作为主要成分的涂层和在涂层表面上包含Au和Pd的表皮合金层的半导体器件用接合线具有1到10的Cu浓度并且芯材含有总量为0.1〜3.0质量％的Pd和Pt中的任一者或两者，由此实现第2接合性的提高和高湿加热条件下的优异的球接合性。此外，表皮合金层中Au的最大浓度优选为15原子％至75原子％。

4. 发明公开

EP3086362A1 BONDING WIRE FOR SEMICONDUCTOR DEVICES 审中-实审转让
标题翻译：连接线半导体器件
公开(公告)号：EP3086362A1
公开(公告)日：2016-10-26
申请号：EP15866377.3
申请日：2015-06-05
申请人： Nippon Micrometal Corporation , Nippon Steel & Sumikin Materials Co., Ltd.
发明人： ODA, Daizo , ETO, Motoki , YAMADA, Takashi , HAIBARA, Teruo , OISHI, Ryo , UNO, Tomohiro , OYAMADA, Tetsuya
IPC分类号： H01L21/60 , C22C9/00 , C22F1/08
CPC分类号： H01L24/45 , C22C9/00 , C22F1/08 , H01L24/05 , H01L24/43 , H01L24/48 , H01L24/85 , H01L2224/05624 , H01L2224/4312 , H01L2224/43125 , H01L2224/4321 , H01L2224/43848 , H01L2224/45 , H01L2224/45005 , H01L2224/45015 , H01L2224/45109 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/45609 , H01L2224/45644 , H01L2224/45664 , H01L2224/48011 , H01L2224/48247 , H01L2224/48465 , H01L2224/48507 , H01L2224/48824 , H01L2224/85045 , H01L2224/85054 , H01L2224/85065 , H01L2224/85075 , H01L2224/8509 , H01L2224/85203 , H01L2224/85439 , H01L2924/00011 , H01L2924/01005 , H01L2924/01012 , H01L2924/01015 , H01L2924/01028 , H01L2924/01031 , H01L2924/01032 , H01L2924/01045 , H01L2924/01046 , H01L2924/01078 , H01L2924/10253 , H01L2924/1576 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/20111 , H01L2924/20752 , H01L2924/01204 , H01L2924/01049 , H01L2924/01014 , H01L2924/01029 , H01L2924/013 , H01L2924/00013 , H01L2924/01001 , H01L2924/01007 , H01L2924/20105 , H01L2924/20656 , H01L2924/00 , H01L2924/2011 , H01L2924/01004 , H01L2924/01033
摘要： There is provided a Cu bonding wire having a Pd coating layer on a surface thereof, that improves bonding reliability of a ball bonded part in a high-temperature and high-humidity environment and is suitable for on-vehicle devices.
The bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, and the bonding wire contains In of 0.011 to 1.2% by mass and has the Pd coating layer of a thickness of 0.015 to 0.150 µm. With this configuration, it is able to increase the bonding longevity of a ball bonded part in a high-temperature and high-humidity environment, and thus to improve the bonding reliability. When the Cu alloy core material contains one or more elements of Pt, Pd, Rh and Ni in an amount, for each element, of 0.05 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 175°C or more. When an Au skin layer is further formed on a surface of the Pd coating layer, wedge bondability improves.

5. 发明公开

EP3007216A1 BONDING WIRE FOR USE WITH SEMICONDUCTOR DEVICES AND METHOD FOR MANUFACTURING SAID BONDING WIRE 有权转让
标题翻译：用于半导体器件的接合线和用于制造所述接合线的方法
公开(公告)号：EP3007216A1
公开(公告)日：2016-04-13
申请号：EP15772826.2
申请日：2015-03-31
申请人： Nippon Micrometal Corporation , Nippon Steel & Sumikin Materials Co., Ltd.
发明人： YAMADA, Takashi , ODA, Daizo , OISHI, Ryo , HAIBARA, Teruo , UNO, Tomohiro
IPC分类号： H01L21/60 , B21C1/00 , C22C5/06 , C22C5/08 , C22F1/00 , C22F1/14
CPC分类号： H01L24/45 , B21C1/00 , B21C1/003 , C22C5/06 , C22C5/08 , C22F1/00 , C22F1/14 , H01L24/43 , H01L2224/4321 , H01L2224/43848 , H01L2224/43986 , H01L2224/45012 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2924/00011 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01046 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/201 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/00 , H01L2924/01201 , H01L2924/01016 , H01L2924/01017 , H01L2924/20751 , H01L2924/20752 , H01L2924/12044 , H01L2924/00015 , H01L2224/45664 , H01L2924/01049 , H01L2924/01045 , H01L2924/01004 , H01L2924/01005
摘要： Bonding wire for semiconductor device use where both leaning failures and spring failures are suppressed by (1) in a cross-section containing the wire center and parallel to the wire longitudinal direction (wire center cross-section), there are no crystal grains with a ratio a/b of a long axis "a" and a short axis "b" of 10 or more and with an area of 15 µm 2 or more ("fiber texture"), (2) when measuring a crystal direction in the wire longitudinal direction in the wire center cross-section, the ratio of crystal direction with an angle difference with respect to the wire longitudinal direction of 15° or less is, by area ratio, 10% to less than 50%, and (3) when measuring a crystal direction in the wire longitudinal direction at the wire surface, the ratio of crystal direction with an angle difference with respect to the wire longitudinal direction of 15° or less is, by area ratio, 70% or more. During the drawing step, a drawing operation with a rate of reduction of area of 15.5% or more is performed at least once. The final heat treatment temperature and the pre-final heat treatment temperature are made predetermined ranges.
摘要翻译：（1）在包含导线中心且平行于导线纵向方向（导线中心横截面）的截面中抑制倾斜失效和弹簧失效的半导体器件用接合线不存在具有（2）当测量导线纵向的晶体方向时，长轴a和短轴b的比a / b为10以上且面积为15μm2以上（“纤维组织” 在线材中心截面中，相对于线材长度方向的角度差为15°以下的结晶方向<100>的面积率为10％以上且小于50％，（3））在测量线表面处的线纵向方向上的结晶方向时，相对于线纵向的角度差为15°或更小的结晶方向<100>的比例以面积比计为70％以上。在拉伸步骤中，至少进行一次面积减少率为15.5％以上的拉伸操作。最终热处理温度和最终热处理前温度被设定为预定的范围。

7. 发明授权

EP2993693B1 BONDING WIRE FOR USE WITH SEMICONDUCTOR DEVICES AND METHOD FOR MANUFACTURING SAID BONDING WIRE 有权转让
公开(公告)号：EP2993693B1
公开(公告)日：2018-06-06
申请号：EP15773517.6
申请日：2015-03-31
申请人： Nippon Micrometal Corporation , Nippon Steel & Sumikin Materials Co., Ltd.
发明人： YAMADA, Takashi , ODA, Daizo , OISHI, Ryo , HAIBARA, Teruo , UNO, Tomohiro
IPC分类号： H01L21/60 , B21C1/00 , C22C5/06 , C22C5/08 , C22F1/00 , C22F1/14 , B23K35/30 , B23K35/02 , H01L23/00
CPC分类号： H01L24/45 , B21C1/00 , B21C1/003 , B23K35/0227 , B23K35/3006 , C22C5/06 , C22C5/08 , C22F1/00 , C22F1/14 , H01L24/43 , H01L2224/4321 , H01L2224/43848 , H01L2224/45012 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45664 , H01L2924/00011 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01046 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/013 , H01L2924/10253 , H01L2924/201 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/01049 , H01L2924/01045 , H01L2924/00014 , H01L2924/01005 , H01L2924/01016 , H01L2924/01017 , H01L2924/00015 , H01L2924/01201
摘要： Bonding wire for semiconductor device use where both leaning failures and spring failures are suppressed by (1) in a cross-section containing the wire center and parallel to the wire longitudinal direction (wire center cross-section), there are no crystal grains with a ratio a/b of a long axis "a" and a short axis "b" of 10 or more and with an area of 15 µm 2 or more ("fiber texture"), (2) when measuring a crystal direction in the wire longitudinal direction in the wire center cross-section, the ratio of crystal direction with an angle difference with respect to the wire longitudinal direction of 15° or less is, by area ratio, 50% to 90%, and (3) when measuring a crystal direction in the wire longitudinal direction at the wire surface, the ratio of crystal direction with an angle difference with respect to the wire longitudinal direction of 15° or less is, by area ratio, 50% to 90%. During the drawing steep, a drawing operation with a rate of reduction of area of 15.5% or more is performed at least once. The final heat treatment temperature and the pre-final heat treatment temperature are made predetermined ranges.

8. 发明公开

EP3157046A1 SEMICONDUCTOR DEVICE BONDING WIRE 有权转让
标题翻译： BONDDRAHTFÜRHALBLEITERBAUELEMENT
公开(公告)号：EP3157046A1
公开(公告)日：2017-04-19
申请号：EP15889429.5
申请日：2015-09-17
申请人： Nippon Micrometal Corporation , Nippon Steel & Sumikin Materials Co., Ltd.
发明人： ODA, Daizo , ETO, Motoki , SAITO, Kazuyuki , HAIBARA, Teruo , OISHI, Ryo , YAMADA, Takashi , UNO, Tomohiro
IPC分类号： H01L21/60
CPC分类号： H01L24/45 , B32B15/00 , C22C5/04 , C22C9/00 , C22C9/06 , H01L24/43 , H01L2224/05624 , H01L2224/4312 , H01L2224/43125 , H01L2224/4321 , H01L2224/43825 , H01L2224/43826 , H01L2224/43827 , H01L2224/43848 , H01L2224/43986 , H01L2224/45 , H01L2224/45015 , H01L2224/45105 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/45639 , H01L2224/45644 , H01L2224/45655 , H01L2224/45657 , H01L2224/45664 , H01L2224/45669 , H01L2224/45671 , H01L2224/48465 , H01L2224/48507 , H01L2224/48824 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85439 , H01L2924/00011 , H01L2924/00014 , H01L2924/01014 , H01L2924/10253 , H01L2924/1576 , H01L2924/181 , H01L2924/01031 , H01L2924/01032 , H01L2924/01028 , H01L2924/01077 , H01L2924/01078 , H01L2924/01005 , H01L2924/01015 , H01L2924/01012 , H01L2924/01029 , H01L2924/00012 , H01L2924/01202 , H01L2924/01203 , H01L2924/01204 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/20752 , H01L2924/013 , H01L2924/01007 , H01L2924/01001 , H01L2924/00013 , H01L2924/01004 , H01L2924/01046 , H01L2924/01033
摘要： There is provided a Cu bonding wire having a Pd coating layer on a surface thereof, that improves bonding reliability of a ball bonded part in a high-temperature, high-humidity environment and is suitable for on-vehicle devices.
The bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, and the bonding wire contains Ga and Ge of 0.011 to 1.2% by mass in total. With this configuration, it is able to increase bonding longevity of the ball bonded part in the high-temperature, high-humidity environment, and thus to improve the bonding reliability. The thickness of the Pd coating layer is preferably 0.015 to 0.150 µm. When the bonding wire further contains one or more elements of Ni, Ir, and Pt in an amount, for each element, of 0.011 to 1.2% by mass, it is able to improve the reliability of the ball bonded part in a high-temperature environment at 175°C or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.
摘要翻译：提供了一种在其表面上具有Pd涂层的Cu键合线，其改善了在高温高湿环境中的接合部分的接合可靠性，并且适用于车载设备。用于半导体器件的接合线包括Cu合金芯材和形成在Cu合金芯材表面上的Pd涂层，并且该接合线总共包含0.011至1.2质量％的Ga和Ge。通过这种结构，能够在高温高湿环境下增加球接合部的粘合寿命，提高接合可靠性。 Pd涂层的厚度优选为0.015〜0.150μm。当接合线还含有Ni，Ir和Pt的一种或多种元素时，对于每种元素，其量为0.011至1.2质量％，可以提高球接合部分在高温下的可靠性环境在175°C以上。当在Pd涂层的表面上进一步形成含有Au和Pd的合金表皮层时，楔形粘合性提高。

9. 发明公开

EP3147938A1 BONDING WIRE FOR SEMICONDUCTOR DEVICE 审中-实审转让
标题翻译：半导体器件的接合线
公开(公告)号：EP3147938A1
公开(公告)日：2017-03-29
申请号：EP15882901.0
申请日：2015-12-28
申请人： Nippon Micrometal Corporation , Nippon Steel & Sumikin Materials Co., Ltd.
发明人： YAMADA, Takashi , ODA, Daizo , OISHI, Ryo , UNO, Tomohiro
IPC分类号： H01L21/60
CPC分类号： H01L24/45 , C22C5/04 , C22C9/00 , C22C9/06 , H01L24/05 , H01L24/43 , H01L24/48 , H01L24/85 , H01L2224/05624 , H01L2224/4312 , H01L2224/43125 , H01L2224/43825 , H01L2224/43826 , H01L2224/43848 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/45572 , H01L2224/45664 , H01L2224/48247 , H01L2224/48465 , H01L2224/48507 , H01L2224/48824 , H01L2224/85075 , H01L2224/85203 , H01L2224/85444 , H01L2224/85464 , H01L2924/00011 , H01L2924/10253 , H01L2924/15311 , H01L2224/45644 , H01L2924/01028 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/01015 , H01L2924/01005 , H01L2924/01004 , H01L2924/01026 , H01L2924/01012 , H01L2924/01022 , H01L2924/0103 , H01L2924/01047 , H01L2924/01014 , H01L2924/00014 , H01L2924/00015 , H01L2924/01203 , H01L2924/01202 , H01L2924/01204 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/01007 , H01L2924/013 , H01L2924/00013 , H01L2924/01033 , H01L2924/00
摘要： There is provided a bonding wire for a semiconductor device including a coating layer having Pd as a main component on a surface of a Cu alloy core material and a skin alloy layer containing Au and Pd on a surface of the coating layer, the bonding wire further improving 2nd bondability on a Pd-plated lead frame and achieving excellent ball bondability even in a high-humidity heating condition. The bonding wire for a semiconductor device including the coating layer having Pd as a main component on the surface of the Cu alloy core material and the skin alloy layer containing Au and Pd on the surface of the coating layer has a Cu concentration of 1 to 10 at% at an outermost surface thereof and has the core material containing a metallic element of Group 10 of the Periodic Table of Elements in a total amount of 0.1 to 3.0% by mass, thereby achieving improvement in the 2nd bondability and excellent ball bondability in the high-humidity heating condition. Furthermore, a maximum concentration of Au in the skin alloy layer is preferably 15 at% to 75 at%.
摘要翻译：提供一种用于半导体器件的接合线，该接合线包括在Cu合金芯材的表面上具有Pd作为主要成分的涂层和在该涂层的表面上包含Au和Pd的表皮合金层，该接合线进一步即使在高湿度加热条件下，也改善了镀钯引线框架上的第二焊接性并实现优异的球焊性。包括在Cu合金芯材表面上具有Pd作为主要成分的涂层和在涂层表面上包含Au和Pd的表皮合金层的半导体器件用接合线具有1到10的Cu浓度并且具有含有总量为0.1〜3.0质量％的元素周期表第10族的金属元素的芯材，由此实现第2接合性的提高和在第2接合性方面的优异的球接合性高湿度的加热条件。此外，表皮合金层中Au的最大浓度优选为15原子％至75原子％。

10. 发明公开

EP3131113A1 BONDING WIRE FOR SEMICONDUCTOR DEVICE 审中-实审转让
标题翻译： VERBINDUNGSDRAHTFÜRHALBLEITERBAUELEMENT
公开(公告)号：EP3131113A1
公开(公告)日：2017-02-15
申请号：EP15866375.7
申请日：2015-07-22
申请人： Nippon Micrometal Corporation , Nippon Steel & Sumikin Materials Co., Ltd.
发明人： YAMADA, Takashi , ODA, Daizo , HAIBARA, Teruo , OISHI, Ryo , SAITO, Kazuyuki , UNO, Tomohiro
IPC分类号： H01L21/60
CPC分类号： B23K35/0227 , B23K35/3013 , B23K35/302 , B23K2201/40 , C22C5/04 , C22C9/00 , C22C9/04 , C22C9/06 , H01L24/05 , H01L24/43 , H01L24/45 , H01L24/48 , H01L2224/05624 , H01L2224/43 , H01L2224/4312 , H01L2224/43125 , H01L2224/4321 , H01L2224/4382 , H01L2224/43848 , H01L2224/43986 , H01L2224/45 , H01L2224/45005 , H01L2224/45015 , H01L2224/45105 , H01L2224/45109 , H01L2224/45111 , H01L2224/45113 , H01L2224/45118 , H01L2224/4512 , H01L2224/45147 , H01L2224/45155 , H01L2224/45169 , H01L2224/45173 , H01L2224/45178 , H01L2224/45541 , H01L2224/45565 , H01L2224/45572 , H01L2224/45644 , H01L2224/45664 , H01L2224/48227 , H01L2224/48247 , H01L2224/4845 , H01L2224/48463 , H01L2224/48824 , H01L2224/78 , H01L2224/78251 , H01L2224/85 , H01L2224/85065 , H01L2224/85075 , H01L2224/85203 , H01L2224/85444 , H01L2224/85464 , H01L2924/01005 , H01L2924/01012 , H01L2924/01015 , H01L2924/0102 , H01L2924/01032 , H01L2924/01033 , H01L2924/01034 , H01L2924/01052 , H01L2924/01057 , H01L2924/0665 , H01L2924/0705 , H01L2924/10253 , H01L2924/186 , H01L2924/01028 , H01L2924/0103 , H01L2924/01045 , H01L2924/01049 , H01L2924/01077 , H01L2924/01078 , H01L2924/01031 , H01L2924/0105 , H01L2924/01051 , H01L2924/01083 , H01L2924/01079 , H01L2924/01046 , H01L2924/01029 , H01L2924/01202 , H01L2924/01203 , H01L2924/01204 , H01L2924/00015 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/20752 , H01L2924/00014 , H01L2924/01014 , H01L2924/013 , H01L2924/00013 , H01L2924/20105 , H01L2924/01001 , H01L2924/01007 , H01L2924/00012 , H01L2924/00 , H01L2924/01027 , H01L2924/01047 , H01L2924/01013
摘要： There is provided a bonding wire for a semiconductor device, the bonding wire including a Cu alloy core material and a Pd coating layer formed on a surface thereof, achieving simultaneously improvement in bonding reliability of a ball bonded part in HTS at 175°C to 200°C and an strength ratio (= ultimate strength/0.2% offset yield strength) of 1.1 to 1.6.
Containing one or more of Ni, Zn, Rh, in, Ir, and Pt in the wire in a total amount of 0.03 to 2% by mass improves the bonding reliability of the ball bonded part in HTS, and furthermore, making an orientation proportion of a crystal orientation angled at 15 degrees or less to a wire longitudinal direction among crystal orientations in the wire longitudinal direction 50% or more when measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, and making an average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire 0.9 to 1.3 µm provides a strength ratio of 1.6 or less.
摘要翻译：提供了一种用于半导体器件的接合线，该接合线包括在其表面上形成的Cu合金芯材料和Pd涂层，实现了在175℃至200℃的HTS中的球接合部分的接合可靠性的同时提高 °C，强度比（=极限强度/ 0.2％偏移屈服强度）为1.1〜1.6。在金属丝中含有0.03〜2质量％的Ni，Zn，Rh，In，Ir和Pt中的一种或多种，提高了在HTS中的球接合部的接合可靠性，此外，使取向比例当在与芯线垂直的方向上测量芯材的横截面上的晶体取向时，在线长度方向上的晶体取向之间的线长度方向上的15度或更小的晶体取向<100>为50％并且在芯材的垂直于接合线的线轴的方向0.9-1.3μm的横截面中使平均晶粒尺寸提供1.6或更小的强度比。

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