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1. 发明公开

EP1184913A1 NITRIDE SEMICONDUCTOR DEVICE AND ITS MANUFACTURINO METHOD 审中-公开
标题翻译： NITRIDHALBLEITER在SEINE HERSTELLUNGSMETHODE
公开(公告)号：EP1184913A1
公开(公告)日：2002-03-06
申请号：EP00902126.2
申请日：2000-02-08
申请人： Nichia Corporation
发明人： NAGAHAMA, Shinichi Nichia Corporation , NAKAMURA, Shuji Nichia Corporation
IPC分类号： H01L33/00 , H01L21/205 , H01S5/323
CPC分类号： C30B29/403 , C30B25/20 , H01L21/02378 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L33/0075 , H01S5/021 , H01S5/0422 , H01S5/3201 , H01S5/32341 , H01S2301/173
摘要： A nitride semiconductor device includes a GaN substrate having a single-crystal GaN layer at least on its surface and plurality of device-forming layers made of nitride semiconductor. The device-forming layer contacting the GaN substrate has a coefficient of thermal expansion smaller than that of GaN, so that a compressive strain is applied to the device-forming layer. This result in prevention of crack forming in the device-forming layers, and a lifetime characteristics of the nitride semiconductor device is improved.
摘要翻译：氮化物半导体器件包括至少在其表面上具有单晶GaN层的GaN衬底和由氮化物半导体制成的多个器件形成层。与GaN衬底接触的器件形成层的热膨胀系数小于GaN的热膨胀系数，从而对器件形成层施加压缩应变。这导致防止器件形成层中的裂纹形成，并且提高了氮化物半导体器件的寿命特性。

2. 发明授权

EP1184913B1 NITRIDE SEMICONDUCTOR LASER DIODE 有权
公开(公告)号：EP1184913B1
公开(公告)日：2018-10-10
申请号：EP00902126.2
申请日：2000-02-08
申请人： Nichia Corporation
发明人： NAGAHAMA, Shinichi Nichia Corporation , NAKAMURA, Shuji Nichia Corporation
IPC分类号： H01S5/323 , C30B25/20 , C30B29/40 , H01S5/02 , H01S5/042 , H01L21/20
CPC分类号： C30B29/403 , C30B25/20 , H01L21/02378 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L33/0075 , H01S5/021 , H01S5/0422 , H01S5/3201 , H01S5/32341 , H01S2301/173
摘要： A nitride semiconductor device includes a GaN substrate having a single-crystal GaN layer at least on its surface and plurality of device-forming layers made of nitride semiconductor. The device-forming layer contacting the GaN substrate has a coefficient of thermal expansion smaller than that of GaN, so that a compressive strain is applied to the device-forming layer. This result in prevention of crack forming in the device-forming layers, and a lifetime characteristics of the nitride semiconductor device is improved.

3. 发明授权

EP1168539B1 NITRIDE SEMICONDUCTOR LASER DEVICE 有权
标题翻译：氮化物半导体激光装置
公开(公告)号：EP1168539B1
公开(公告)日：2009-12-16
申请号：EP00906695.2
申请日：2000-03-03
申请人： Nichia Corporation
发明人： KOZAKI, Tokuya Nichia Corporation , SANO, Masahiko Nichia Corporation , NAKAMURA, Shuji Nichia Corporation , NAGAHAMA, Shinichi Nichia Corporation
IPC分类号： H01S5/22
CPC分类号： B82Y20/00 , H01S5/0655 , H01S5/2004 , H01S5/2031 , H01S5/22 , H01S5/2214 , H01S5/2216 , H01S5/223 , H01S5/2231 , H01S5/3213 , H01S5/32341 , H01S5/34333 , H01S2304/00
摘要： A nitride semiconductor laser element enhanced in transverse-mode stability and service life characteristics at a high output so as to be available as a light source for reading from and writing to a large-capacity medium, the element comprising an active layer, a p-side clad layer and a p-side contact layer, all laminated in that order, wherein a stripe-like waveguide area is formed by etching from the p-side contact layer side, which area has a width of 1 to 3 νm and a depth extending from below a position where the film thickness of the p-side clad layer is 0.1 νm to above a luminous layer. Specially, a nitride semiconductor laser element improved in an aspect ratio in a far-field pattern, wherein a p-side optical guide layer has a stripe-like projection, a p-type nitride semiconductor layer overlies the projection, and the p-side optical guide layer's projection has a film thickness of up to 1 νm, the p-side optical guide layer being characterized by being larger in film thickness than an n-side optical guide layer.
摘要翻译：一种氮化物半导体激光器元件在横向模式稳定性和使用寿命特性方面以高输出增强，从而可用作读取和写入大容量介质的光源，所述元件包括有源层，所有的p侧接触层和p侧接触层按顺序层叠在一起，其中从p侧接触层侧通过蚀刻形成条状波导区域，该区域具有1至3νm的宽度和深度从p侧覆层的膜厚为0.1μm的位置的下方延伸到发光层的上方。特别地，在远场图案中纵横比改善的氮化物半导体激光元件，其中，p侧光导层具有条状突起，p型氮化物半导体层覆盖突起，并且p侧光导层的凸起具有高达1νm的膜厚度，该p侧光导层的特征在于其膜厚比n侧光导层大。

4. 发明公开

EP1168539A1 NITRIDE SEMICONDUCTOR LASER ELEMENT 有权
标题翻译：氮化物半导体激光元件
公开(公告)号：EP1168539A1
公开(公告)日：2002-01-02
申请号：EP00906695.2
申请日：2000-03-03
申请人： Nichia Corporation
发明人： KOZAKI, Tokuya Nichia Corporation , SANO, Masahiko Nichia Corporation , NAKAMURA, Shuji Nichia Corporation , NAGAHAMA, Shinichi Nichia Corporation
IPC分类号： H01S5/22
CPC分类号： B82Y20/00 , H01S5/0655 , H01S5/2004 , H01S5/2031 , H01S5/22 , H01S5/2214 , H01S5/2216 , H01S5/223 , H01S5/2231 , H01S5/3213 , H01S5/32341 , H01S5/34333 , H01S2304/00
摘要： A nitride semiconductor laser device has an improved stability of the lateral mode under high output power and a longer lifetime, so that the device can be applied to write and read light sources for recording media with high capacity. The nitride semiconductor laser device includes an active layer, a p-side cladding layer, and a p-side contact layer laminated in turn. The device further includes a waveguide region of a stripe structure formed by etching from the side of the p-side contact layer. The stripe width provided by etching is within the stripe range of 1 to 3 µm and the etching depth is below the thickness of the p-side cladding layer of 0.1 µm and above the active layer. Particularly, when a p-side optical waveguide layer includes a projection part of the stripe structure and a p-type nitride semiconductor layer on the projection part and the projection part of the p-side optical waveguide layer has a thickness of not more than 1 µm, an aspect ratio is improved in far field image. Moreover, the thickness of the p-side optical waveguide layer is greater than that of an n-side optical waveguide layer.
摘要翻译：氮化物半导体激光器件在高输出功率下具有改进的横向模式的稳定性并具有较长的寿命，使得该器件可用于写入和读取用于高容量记录介质的光源。该氮化物半导体激光器元件包括依次层叠的有源层，p侧包覆层和p侧接触层。该器件还包括通过从p侧接触层的侧面蚀刻而形成的条状结构的波导区域。通过蚀刻提供的条带宽度在1至3μm的条带范围内，并且蚀刻深度低于0.1μm的p侧包覆层的厚度并且低于有源层。特别是，当p侧光波导层包括条状结构的突起部分和突起部分上的p型氮化物半导体层并且p侧光波导层的突起部分具有不大于1的厚度 μm，在远场图像中改善纵横比。而且，p侧光波导层的厚度大于n侧光波导层的厚度。

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