专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明公开

EP3160044A1 RF POWER TRANSISTORS WITH IMPEDANCE MATCHING CIRCUITS, AND METHODS OF MANUFACTURE THEREOF 有权
标题翻译：具有阻抗匹配电路的RF功率晶体管及其制造方法
公开(公告)号：EP3160044A1
公开(公告)日：2017-04-26
申请号：EP16194673.6
申请日：2016-10-19
申请人： NXP USA, Inc.
发明人： Zhu, Ning , Holmes, Damon G. , Jones, Jeffrey K
IPC分类号： H03F3/195 , H03F1/56 , H01L23/66
摘要： Embodiments of an RF amplifier include a transistor with a control terminal and first and second current carrying terminals, and a shunt circuit coupled between the first current carrying terminal and a ground reference node. The shunt circuit includes a first shunt inductance, a second shunt inductance, and a shunt capacitor coupled in series. The second shunt inductance and the shunt capacitor form a series resonant circuit in proximity to a center operating frequency of the amplifier, and an RF cold point node is present between the first and second shunt inductances. The RF amplifier also includes a video bandwidth circuit coupled between the RF cold point node and the ground reference node.
摘要翻译： RF放大器的实施例包括具有控制端子和第一和第二载流端子的晶体管以及耦合在第一载流端子和地参考节点之间的分流电路。分流电路包括串联耦合的第一分流电感，第二分流电感和分流电容器。第二并联电感和并联电容形成靠近放大器的中心工作频率的串联谐振电路，并且在第一和第二并联电感之间存在RF冷点节点。 RF放大器还包括耦合在RF冷点节点和地参考节点之间的视频带宽电路。

2. 发明公开

EP3160043A1 OUTPUT IMPEDANCE MATCHING CIRCUIT FOR RF AMPLIFIER DEVICES, AND METHODS OF MANUFACTURE THEREOF 有权
标题翻译：输出阻抗匹配电路高频放大装置和方法及其生产
公开(公告)号：EP3160043A1
公开(公告)日：2017-04-26
申请号：EP16195003.5
申请日：2016-10-21
申请人： NXP USA, Inc.
发明人： Lembeye, Olivier , Zhu, Ning , Holmes, Damon G.
IPC分类号： H03F1/56 , H03F3/195 , H01L23/64 , H01L23/66
CPC分类号： H01L23/66 , H01L23/49562 , H01L23/49589 , H01L23/5227 , H01L23/528 , H01L23/645 , H01L24/48 , H01L24/49 , H01L24/85 , H01L2223/6611 , H01L2223/6655 , H01L2223/6672 , H01L2224/04042 , H01L2224/05552 , H01L2224/05553 , H01L2224/291 , H01L2224/2919 , H01L2224/32245 , H01L2224/48091 , H01L2224/48106 , H01L2224/48137 , H01L2224/48195 , H01L2224/48247 , H01L2224/48265 , H01L2224/49052 , H01L2224/49113 , H01L2224/49175 , H01L2224/73265 , H01L2224/83805 , H01L2224/8384 , H01L2924/00014 , H01L2924/1304 , H01L2924/1305 , H01L2924/13091 , H01L2924/1421 , H01L2924/19011 , H01L2924/19041 , H01L2924/19042 , H01L2924/19105 , H01L2924/19107 , H01L2924/30107 , H03F1/565 , H03F3/19 , H03F3/195 , H03F2200/222 , H03F2200/387 , H03F2200/391 , H03F2200/402 , H03F2200/451 , H03F2200/75 , H03F2203/21103 , H03F2203/21139 , H01L2924/014 , H01L2924/00 , H01L2224/45099 , H01L2224/05599
摘要： A packaged RF amplifier device includes a transistor and an output circuit. The transistor includes a control terminal and first and second current carrying terminals. The output circuit is coupled between the first current carrying terminal and an output lead. The output circuit includes first and second inductive elements coupled in series. The first inductive element, which may be a first bondwire array or an integrated inductance, is coupled between the first current carrying terminal and a node. The second inductive element, which includes a second bondwire array, is coupled between the node and the output lead. The device also includes a shunt circuit with a shunt capacitor and a third bondwire array coupled between the first current carrying terminal and the shunt capacitor. The first and second inductive elements and the third bondwire array are configured to have a desired mutual inductance.
摘要翻译：一种封装的RF放大器装置包括晶体管和输出电路。该晶体管包括一控制端子和第一和第二载流端子。输出电路被耦合在所述第一载流端子之间，并且向输出引线。该输出电路包括串联耦合的第一和第二感应元件。第一电感元件，其可以是第一键合线阵列或综合电感，耦合在第一电流承载终端与节点之间。第二电感元件，其包括第二键合线阵列，耦接于节点和输出引线之间。因此，该装置包括具有并联电容器和耦合在所述第一电流承载端和并联电容器之间的第三接合线阵列的分流电路。第一和第二感应元件和第三接合线阵列被配置为具有期望的互感。

3. 发明公开

EP3160042A1 RF POWER TRANSISTORS WITH VIDEO BANDWIDTH CIRCUITS, AND METHODS OF MANUFACTURE THEREOF 审中-公开
标题翻译：具有视频带宽电路的RF功率晶体管及其制造方法
公开(公告)号：EP3160042A1
公开(公告)日：2017-04-26
申请号：EP16194844.3
申请日：2016-10-20
申请人： NXP USA, Inc.
发明人： Zhu, Ning , Jones, Jeffrey K , Holmes, Damon G.
IPC分类号： H03F1/56 , H03F3/195 , H01L23/66
CPC分类号： H03F1/565 , H01L23/66 , H01L2223/6655 , H01L2224/48091 , H01L2224/49175 , H03F3/19 , H03F3/195 , H03F2200/108 , H03F2200/181 , H03F2200/216 , H03F2200/222 , H03F2200/225 , H03F2200/297 , H03F2200/301 , H03F2200/309 , H03F2200/387 , H03F2200/391 , H03F2200/402 , H03F2200/451 , H03F2200/552 , H03F2200/75 , H01L2924/00014
摘要： Embodiments of RF amplifiers and packaged RF amplifier devices each include a transistor, an impedance matching circuit, and a video bandwidth circuit. The impedance matching circuit is coupled between the transistor and an RF I/O (e.g., an input or output lead). The video bandwidth circuit is coupled between a connection node of the impedance matching circuit and a ground reference node. The video bandwidth circuit includes a plurality of components, which includes an envelope inductor and an envelope capacitor coupled in series between the connection node and the ground reference node. The video bandwidth circuit further includes a first bypass capacitor coupled in parallel across one or more of the plurality of components of the video bandwidth circuit.
摘要翻译： RF放大器和封装RF放大器器件的实施例均包括晶体管，阻抗匹配电路和视频带宽电路。阻抗匹配电路耦合在晶体管和RF I / O（例如输入或输出引线）之间。视频带宽电路耦合在阻抗匹配电路的连接节点和接地参考节点之间。视频带宽电路包括多个组件，其包括串联耦合在连接节点和接地参考节点之间的包络电感器和包络电容器。视频带宽电路进一步包括跨越视频带宽电路的多个组件中的一个或多个并行耦合的第一旁路电容器。

4. 发明公开

EP3836391A1 BROADBAND POWER TRANSISTOR DEVICES AND AMPLIFIERS WITH OUTPUT T-MATCH AND HARMONIC TERMINATION CIRCUITS AND METHODS OF MANUFACTURE THEREOF 审中-公开
公开(公告)号：EP3836391A1
公开(公告)日：2021-06-16
申请号：EP19306611.5
申请日：2019-12-10
申请人： NXP USA, Inc.
发明人： Roberts, Jeffrey Spencer , Zhu, Ning , Lembeye, Olivier , Holmes, Damon G. , Jones, Jeffrey Kevin
IPC分类号： H03F1/02 , H03F1/56 , H03F3/195 , H01L23/66 , H03F3/213 , H03F3/24
摘要： Embodiments of RF amplifiers and packaged RF amplifier devices each include an amplification path with a transistor die, and an output-side impedance matching circuit having a T-match circuit topology. The output-side impedance matching circuit includes a first inductive element (e.g., first wirebonds) connected between the transistor output terminal and a quasi RF cold point node, a second inductive element (e.g., second wirebonds) connected between the quasi RF cold point node and an output of the amplification path, and a first capacitance connected between the quasi RF cold point node and a ground reference node. The RF amplifiers and devices also include a baseband termination circuit connected to the quasi RF cold point node, which includes an envelope resistor, an envelope inductor, and an envelope capacitor coupled in series between the quasi RF cold point node and the ground reference node.

5. 发明公开

EP3817224A1 RF AMPLIFIERS WITH INPUT-SIDE FRACTIONAL HARMONIC RESONATOR CIRCUITS 有权
公开(公告)号：EP3817224A1
公开(公告)日：2021-05-05
申请号：EP20200886.8
申请日：2020-10-08
申请人： NXP USA, Inc.
发明人： Roberts, Jeffrey Spencer , Zhu, Ning , Holmes, Damon G. , Jones, Jeffrey Kevin
IPC分类号： H03F3/195 , H03F3/213 , H03F1/02 , H03F1/56 , H03F3/24
摘要： A radio frequency amplifier includes a transistor, an input impedance matching circuit (e.g., a single-section T-match circuit or a multiple-section bandpass circuit), and a fractional harmonic resonator circuit. The input impedance matching circuit is coupled between an amplification path input and a transistor input terminal. An input of the fractional harmonic resonator circuit is coupled to the amplification path input, and an output of fractional harmonic resonator circuit is coupled to the transistor input terminal. The fractional harmonic resonator circuit is configured to resonate at a resonant frequency that is between a fundamental frequency of operation of the RF amplifier and a second harmonic of the fundamental frequency. According to a further embodiment, the fractional harmonic resonator circuit resonates at a fraction, x, of the fundamental frequency, wherein the fraction is between about 1.25 and about 1.9 (e.g., x ≈ 1.5).

6. 发明授权

EP3160044B1 RF POWER TRANSISTORS WITH IMPEDANCE MATCHING CIRCUITS, AND METHODS OF MANUFACTURE THEREOF 有权
公开(公告)号：EP3160044B1
公开(公告)日：2020-08-12
申请号：EP16194673.6
申请日：2016-10-19
申请人： NXP USA, Inc.
发明人： Zhu, Ning , Holmes, Damon G. , Jones, Jeffrey K
IPC分类号： H03F3/195 , H03F1/56 , H01L23/66

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式