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1. 发明公开

EP2360489A1 Magnetic field sensor 有权
标题翻译：磁场传感器
公开(公告)号：EP2360489A1
公开(公告)日：2011-08-24
申请号：EP10152688.7
申请日：2010-02-04
申请人： NXP B.V.
发明人： Vanhelmont, Frederik Willem Maurits , Isler, Mark , Jansman, Andreas Bernardus Maria , Wolters, Robertus Andrianus Maria
IPC分类号： G01R33/09 , G01R33/00
CPC分类号： G01R33/0052 , B82Y25/00 , G01R33/0005 , G01R33/093 , G01R33/096
摘要： An MR sensor arrangement is integrated with an IC. A metal layer of the IC structure (e.g. CMOS) is patterned to define at least first and second contact regions. Metal connecting plugs are provided below the first and second contact regions of the metal layer for making contact to terminals of the integrated circuit. A magnetoresistive material layer is above the metal layer and separated by a dielectric layer. Second metal connecting plugs extend up from the metal layer to an MR sensor layer. The sensor layer is thus formed over the top of the layers of the IC structure.
摘要翻译： MR传感器装置与IC集成。 IC结构（例如CMOS）的金属层被图案化以限定至少第一和第二接触区域。金属连接插头设置在金属层的第一和第二接触区下方，用于与集成电路的端子接触。磁阻材料层位于金属层之上并被介电层分开。第二金属连接插头从金属层向上延伸到MR传感器层。传感器层因此形成在IC结构的层的顶部上方。

2. 发明公开

EP2330432A1 Magnetic field sensor 有权
标题翻译： Magnetfeldsensor
公开(公告)号：EP2330432A1
公开(公告)日：2011-06-08
申请号：EP09176469.6
申请日：2009-11-19
申请人： NXP B.V.
发明人： van Veldhoven, Robert Henrikus Margaretha , Jansman, Andreas Bernardus Maria , Ruigrok, Jaap
IPC分类号： G01R33/09
CPC分类号： G01R33/09 , G01R33/096
摘要： An AMR sensor, comprises at least first and second AMR sensor elements to which opposite bias fields are applied. The first and second AMR sensor element outputs are combined to derive a sensor response which is substantially anti-symmetric in the region close to zero external magnetic field.
This arrangement shifts the zero detection point of the AMR sensor elements away from a maximum of the response curve, so that sensitivity in proximity to a zero input field is obtained. To overcome the problem that the response is not anti-symmetric, the signals from (at least) two sensor elements are combined.
摘要翻译： AMR传感器包括至少第一和第二AMR传感器元件，相应的偏置场被施加到其上。组合第一和第二AMR传感器元件输出以导出在接近零的外部磁场的区域中基本上反对称的传感器响应。该布置使得AMR传感器元件的零点检测点远离响应曲线的最大值，从而获得接近零输入场的灵敏度。为了克服响应不是反对称的问题，来自（至少）两个传感器元件的信号被组合。

3. 发明授权

EP2413154B1 Magnetoresistive Sensor 有权
标题翻译：磁阻传感器
公开(公告)号：EP2413154B1
公开(公告)日：2013-04-17
申请号：EP10171416.0
申请日：2010-07-30
申请人： NXP B.V.
发明人： Phan Le, Kim , Vanhelmont, Frederik Willem Maurits , Ruigrok, Jaap , Jansman, Andreas Bernardus Maria , Van Veldhoven, Robert Hendrikus Margaretha
IPC分类号： G01R33/09
CPC分类号： G01R33/09 , G01R33/096

4. 发明授权

EP2330432B1 Magnetic field sensor 有权
标题翻译：磁场传感器
公开(公告)号：EP2330432B1
公开(公告)日：2013-01-09
申请号：EP09176469.6
申请日：2009-11-19
申请人： NXP B.V.
发明人： van Veldhoven, Robert Henrikus Margaretha , Jansman, Andreas Bernardus Maria , Ruigrok, Jaap
IPC分类号： G01R33/09
CPC分类号： G01R33/09 , G01R33/096

5. 发明公开

EP2667415A1 HETEROJUNCTION SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD 有权转让
标题翻译： Heteroübergang-Halbleiterbauelement und Herstellungsverfahrendafür
公开(公告)号：EP2667415A1
公开(公告)日：2013-11-27
申请号：EP12168884.0
申请日：2012-05-22
申请人： NXP B.V.
发明人： Hurkx, Godefridus Adrianus Maria , Croon, Jeroen , Donkers, Johannes , Sonsky, Jan , Sque, Stephen , Jansman, Andreas Bernardus Maria , Mueller, Markus , Heil, Stephan , Boettcher, Tim
IPC分类号： H01L29/423 , H01L29/778 , H01L29/417 , H01L29/872
CPC分类号： H01L29/475 , H01L21/02362 , H01L21/0254 , H01L29/2003 , H01L29/401 , H01L29/417 , H01L29/42316 , H01L29/7787 , H01L29/7788 , H01L29/872
摘要： Disclosed is a semiconductor device comprising a group 13 nitride heterojunction comprising a first layer having a first bandgap and a second layer having a second bandgap, wherein the first layer is located between a substrate and the second layer; and a Schottky electrode and a first further electrode each conductively coupled to a different area of the heterojunction, said Schottky electrode comprising a central region and an edge region, wherein the element comprises a conductive barrier portion located underneath said edge region only of the Schottky electrode for locally increasing the Schottky barrier of the Schottky electrode. A method of manufacturing such a semiconductor device is also disclosed.
摘要翻译：公开了一种包括13族氮化物异质结的半导体器件，其包括具有第一带隙的第一层和具有第二带隙的第二层，其中第一层位于衬底和第二层之间; 以及肖特基电极和第一另外的电极，每个导体耦合到所述异质结的不同区域，所述肖特基电极包括中心区域和边缘区域，其中所述元件包括仅位于所述肖特基电极的所述边缘区域下方的导电阻挡部分用于局部增加肖特基电极的肖特基势垒。还公开了制造这种半导体器件的方法。

6. 发明授权

EP2360489B1 Magnetic field sensor 有权
标题翻译：磁场传感器
公开(公告)号：EP2360489B1
公开(公告)日：2013-04-17
申请号：EP10152688.7
申请日：2010-02-04
申请人： NXP B.V.
发明人： Vanhelmont, Frederik Willem Maurits , Isler, Mark , Jansman, Andreas Bernardus Maria , Wolters, Robertus Andrianus Maria
IPC分类号： G01R33/09 , G01R33/00
CPC分类号： G01R33/0052 , B82Y25/00 , G01R33/0005 , G01R33/093 , G01R33/096

7. 发明公开

EP2413154A1 Magnetoresistive Sensor 有权
标题翻译：磁阻传感器
公开(公告)号：EP2413154A1
公开(公告)日：2012-02-01
申请号：EP10171416.0
申请日：2010-07-30
申请人： NXP B.V.
发明人： Phan Le, Kim , Vanhelmont, Frederik Willem Maurits , Ruigrok, Jaap , Jansman, Andreas Bernardus Maria , Van Veldhoven, Robert Hendrikus Margaretha
IPC分类号： G01R33/09
CPC分类号： G01R33/09 , G01R33/096
摘要： A magnetoresistive sensor comprising first and second magnetoresistive elements is disclosed. Each magnetoresistive element is coupled at a respective first end to a common ground terminal and comprises one or more magnetoresistive segments (12a - 12d, 14a - 14d), each overlying a corresponding segment (10a - 10d, 11a - 11d) of an excitation coil. The resistance of the magnetoresistive segments (12a - 12d, 14a - 14d) in each of the first and second magnetoresistive elements is the same and the resistance of the segments of the excitation coil corresponding to the first magnetoresistive element is the same as the resistance of the segments of the excitation coil corresponding to the second magnetoresistive element.
摘要翻译：公开了一种包括第一和第二磁阻元件的磁阻传感器。每个磁阻元件在相应的第一端处耦合到公共接地端子，并且包括一个或多个磁阻段（12a-12d，14a-14d），每个磁阻段（12a-12d，14a-14d）覆盖励磁线圈的对应段（10a-10d，11a-11d）。第一和第二磁阻元件中的每一个中的磁阻部分（12a-12d，14a-14d）的电阻相同，并且与第一磁阻元件对应的激励线圈的电阻与第一磁阻元件的电阻相同励磁线圈的段对应于第二磁阻元件。

8. 发明公开

EP2299593A1 Laterally coupled bulk acoustic wave device 审中-公开
标题翻译：横向gekoppelte Volumenschallwellenvorrichtung
公开(公告)号：EP2299593A1
公开(公告)日：2011-03-23
申请号：EP09170753.9
申请日：2009-09-18
申请人： NXP B.V.
发明人： Jansman, Andreas Bernardus Maria , Strijbos, Rensinus Cornelis , Pensala, Tuomas , Meltaus, Johanna
IPC分类号： H03H9/56
CPC分类号： H03H9/564 , H03H3/04 , H03H9/02228
摘要： A laterally-coupled bulk acoustic wave device for acoustic coupling of signals having frequencies in a desired pass-band. The device comprises: a piezoelectric layer; a first electrode disposed on the piezoelectric layer defining a first electrode portion of the device; and a second electrode disposed on the piezoelectric layer defining a second electrode portion of the device. A gap portion of the device is defined between the first and second electrodes and a remaining portion of the device is defined around the electrodes. A layer structure of the device is adapted such that in the remaining portion the wave number for each of a plurality of desired eigenmodes within the pass-band is an imaginary number. This enhances coupling of frequencies in the pass-band between the first and second electrodes.
摘要翻译：用于在具有期望的通带中的频率的信号的声耦合的横向耦合的体声波装置。该装置包括：压电层; 设置在所述压电层上的第一电极限定所述装置的第一电极部分; 以及设置在压电层上的第二电极，其限定该器件的第二电极部分。器件的间隙部分限定在第一和第二电极之间，并且器件的剩余部分围绕电极限定。该装置的层结构适于使得在剩余部分中，通带内的多个期望本征模式中的每一个的波数为虚数。这增强了第一和第二电极之间的通带中的频率耦合。

9. 发明公开

EP2239961A1 Backplate for microphone 审中-公开
标题翻译： Rückplattefürein Mikrofon
公开(公告)号：EP2239961A1
公开(公告)日：2010-10-13
申请号：EP09157442.6
申请日：2009-04-06
申请人： NXP B.V.
发明人： Van Der Avoort, Cas , Jansman, Andreas Bernardus Maria , Langereis, Geert , Van Lippen, Twan , Suy, Hilco
IPC分类号： H04R19/00 , H04R31/00 , B81C1/00
CPC分类号： H04R19/005 , H04R31/00 , H04R2499/11 , Y10T29/49005 , Y10T29/49575
摘要： A microphone has a membrane (20) mounted to vibrate in response to pressure fluctuations, a backplate (30) facing the membrane and being more rigid than the membrane, and circuitry (95) for sensing the vibrations relative to the backplate, the backplate being prestressed and having a geometry such that a response of the backplate to structure borne vibration matches a corresponding response of the membrane. This can help reduce or minimize relative movement between these surfaces caused by structure borne vibration and hence improve the signal-to-noise ratio of the microphone. The geometry can be a hub and spoke arrangement.
摘要翻译：麦克风具有安装成响应于压力波动而振动的膜（20），面向膜并且比膜更刚性的背板（30），以及用于感测相对于背板的振动的电路（95），背板是预应力并且具有几何形状，使得背板对结构承载的振动的响应与膜的相应响应匹配。这可以帮助减少或最小化由结构承受振动引起的这些表面之间的相对运动，从而提高麦克风的信噪比。几何可以是轮毂和轮辐装置。

10. 发明公开

EP2237416A1 Device comprising an electroacoustic balun 审中-公开
标题翻译： Vorrichtung mit einem elektroakustischen Balun
公开(公告)号：EP2237416A1
公开(公告)日：2010-10-06
申请号：EP09156769.3
申请日：2009-03-30
申请人： NXP B.V.
发明人： Jansman, Andreas Bernardus Maria
IPC分类号： H03H9/00 , H03H9/56
CPC分类号： H03H9/0095 , H03H9/0028 , H03H9/564
摘要： A device has an electroacoustic interface between interfaces for balanced electrical signals and unbalanced electrical signals (i.e. a balun). A film (10) of piezoelectric material is used. On a first surface of the film a first and second pair of electrodes (14, 16, 18, 44a, b, 46, 48) is used. On the second surface of the film (10) an electrode arrangement (12) is provided that has least partial overlaps with all of the electrodes (14, 16, 18, 44a,b, 46, 48) of the first and second pair. This provides for a lateral acoustic coupling between the pairs of electrodes, and resonances in the first and second pair with resonances that are affected both by the same film thickness. The pairs are symmetrically related in that the interfaces between the electrodes in the first and second pair have geometrically identical shapes. A three electrode structure may be used, wherein the pairs share a first electrode (14), or a four electrode structure (44a, b, 46, 48) may be used with distinct pairs. Piezoelectrically polarized regions are provided in the film (10) at the overlaps of the electrodes with the electrode arrangement. The direction of the polarization components of the regions in the overlaps with the first electrode (14, 44a) and the second electrode (16, 46) in the first pair are equal to each other. To provide for balun coupling, the directions of the polarization components in the overlaps with the first electrode (14, 44b) and the second electrode (18, 48) in the second pair are mutually opposite.
摘要翻译：器件具有用于平衡电信号和不平衡电信号的接口之间的电声界面（即，平衡 - 不平衡变换器）。使用压电材料的薄膜（10）。在薄膜的第一表面上，使用第一和第二对电极（14,16,18,44a，b，46,48）。在薄膜（10）的第二表面上设置电极装置（12），其与第一和第二对的所有电极（14,16,18,44a，b，46,48）具有最小的部分重叠。这提供了电极对之间的横向声耦合，以及第一和第二对中的共振，其具有受相同膜厚度影响的谐振。这些对是对称的，因为第一和第二对中的电极之间的界面具有几何相同的形状。可以使用三电极结构，其中对共享第一电极（14），或者可以使用具有不同对的四电极结构（44a，b，46,48）。在电极与电极装置的重叠处，膜（10）中设置有压电极化区域。与第一对电极（14,44a）和第二电极（16,46）重叠的区域的偏振分量的方向彼此相等。为了提供平衡 - 不平衡转换耦合，第二对中与第一电极（14,44b）和第二电极（18,48）重叠的偏振分量的方向相互相反。

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