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1. 发明公开

EP2937391A4 BOTTOM LAYER FILM-FORMATION COMPOSITION OF SELF-ORGANIZING FILM CONTAINING POLYCYCLIC ORGANIC VINYL COMPOUND 审中-公开
标题翻译：成分形成具有的多环有机化合物VINYL自组织土层FILMS
公开(公告)号：EP2937391A4
公开(公告)日：2016-08-31
申请号：EP13864158
申请日：2013-12-13
申请人： NISSAN CHEMICAL IND LTD
发明人： SOMEYA YASUNOBU , WAKAYAMA HIROYUKI , ENDO TAKAFUMI , SAKAMOTO RIKIMARU
IPC分类号： C09D201/00 , B05D1/38 , B05D3/10 , B05D7/24 , C09D5/00 , C09D125/00 , C09D139/04 , C09D145/00 , G03F7/11 , G03F7/26 , H01L21/027
CPC分类号： C08J5/18 , B05D1/005 , B05D1/322 , B05D3/0254 , C08J2325/02 , C08J2325/08 , C08J2325/14 , C08J2333/12 , C08J2339/04 , C09D139/04 , C09D145/00 , C09D153/00 , C09D201/00 , G03F7/0002 , Y10T428/24802
摘要： There is provided an underlayer film for a self-assembled film and that does not intermix (layer-mix) with the self-assembled film as the upper layer and that enables the formation of a vertical pattern of the self-assembled film. An underlayer film-forming composition for a self-assembled film comprising a polymer including 0.2% by mole or more of a unit structure of a polycyclic aromatic vinyl compound relative to all unit structures of the polymer. The polymer includes 20% by mole or more of a unit structure of an aromatic vinyl compound relative to all the unit structures of the polymer and includes 1% by mole or more of a unit structure of the polycyclic aromatic vinyl compound relative to all the unit structures of the aromatic vinyl compound. The aromatic vinyl compound includes an optionally substituted vinylnaphthalene, acenaphthylene, or vinylcarbazole, and the polycyclic aromatic vinyl compound is vinylnaphthalene, acenaphthylene, or vinylcarbazole. The aromatic vinyl compound includes an optionally substituted styrene and an optionally substituted vinylnaphthalene, acenaphthylene, or vinylcarbazole, and the polycyclic aromatic vinyl compound is vinylnaphthalene, acenaphthylene, or vinylcarbazole.
摘要翻译：有被设置在下层膜为自组装薄膜，也不会混杂（层混合物）与所述自组装薄膜作为上层并且做允许自组装成膜的垂直图案的形成。的下层膜形成用组合物，对于自组装膜，其包含聚合物包含（摩尔）或更多的多环芳族乙烯基化合物相对于一个单元结构的所述聚合物的全部结构单元为0.2％。所述聚合物包括由摩尔或更多的芳族乙烯基化合物相对于结构单元的20％至所述聚合物的所有单元的结构，并且包括1摩尔％或更多的多环芳族乙烯基化合物相对于的单元结构的所有单元芳香族乙烯基化合物的结构。的芳香族乙烯基化合物包括乙烯基萘substituiertem到任选地，苊烯，或乙烯基咔唑，以及多环芳族乙烯基化合物是乙烯基萘，苊烯，或乙烯基咔唑。芳香族乙烯基化合物包括OPTIONALLY substituiertem苯乙烯和在OPTIONALLY substituiertem乙烯基萘，苊烯，或乙烯基咔唑，以及多环芳族乙烯基化合物是乙烯基萘，苊烯，或乙烯基咔唑。

2. 发明公开

EP2881794A4 COMPOSITION FOR FORMING UNDERLAYER FILM FOR SILICON-CONTAINING EUV RESIST AND CONTAINING ONIUM SULFONATE 审中-公开
标题翻译：形成组合物用于硅的底层薄膜含EUV PHOTO漆ONIUMSULFONAT
公开(公告)号：EP2881794A4
公开(公告)日：2016-05-04
申请号：EP13825237
申请日：2013-07-29
申请人： NISSAN CHEMICAL IND LTD
发明人： SHIBAYAMA WATARU , SHIGAKI SHUHEI , SAKAMOTO RIKIMARU
IPC分类号： G03F7/11 , C08K5/42 , G03F7/004 , G03F7/075 , G03F7/09 , H01L21/027 , H01L21/3105 , H01L21/311
CPC分类号： C08K5/42 , C09D183/04 , G03F7/0045 , G03F7/0752 , G03F7/0755 , G03F7/0757 , G03F7/094 , G03F7/11 , H01L21/3105 , H01L21/31138 , H01L21/31144 , C08K5/092
摘要： There is provided a resist underlayer film-forming composition for EUV lithography which shows good resist shape. A resist underlayer film-forming composition for EUV lithography, comprising: a hydrolyzable organosilane, a hydrolyzed product thereof, or a hydrolyzed condensate thereof, as a silane; and a salt of a sulfonic acid ion containing a hydrocarbon group with an onium ion. The hydrolyzable organosilane preferably comprises at least one organic silicon compound selected from the group consisting of compounds of Formula (1): €ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒR 1 a Si(R 2 ) 4-a €ƒ€ƒ€ƒ€ƒ€ƒFormula (1) and compounds of Formula (2): €ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ[R 3 c Si(R 4 ) 3-c ] 2 Y b €ƒ€ƒ€ƒ€ƒ€ƒFormula (2) a hydrolyzed product thereof, or a hydrolyzed condensate thereof. A method for manufacturing a semiconductor device, the method comprising: forming an organic underlayer film on a semiconductor substrate; forming a resist underlayer film by applying the resist underlayer film-forming composition onto the organic underlayer film, and then baking the applied resist underlayer film-forming composition; forming a resist film by applying a composition for EUV resists onto the resist underlayer film; EUV-exposing the resist film; and obtaining a resist pattern by developing the exposed resist film.

3. 发明公开

EP1939688A4 COMPOSITION FOR ANTIREFLECTION FILM FORMATION, COMPRISING PRODUCT OF REACTION BETWEEN ISOCYANURIC ACID COMPOUND AND BENZOIC ACID COMPOUND 审中-公开
标题翻译：物形成杀伤REFLEX FILMS包括反应乘积之间的异氰脲酸化合物和苯甲酸
公开(公告)号：EP1939688A4
公开(公告)日：2010-06-02
申请号：EP05788391
申请日：2005-09-27
申请人： NISSAN CHEMICAL IND LTD
发明人： KISHIOKA TAKAHIRO , SAKAMOTO RIKIMARU , MARUYAMA DAISUKE
IPC分类号： G03F7/11 , H01L21/027
CPC分类号： G03F7/091

4. 发明公开

EP2690497A4 POLYMER-CONTAINING DEVELOPER 审中-公开
标题翻译：聚合物开发商
公开(公告)号：EP2690497A4
公开(公告)日：2014-08-20
申请号：EP12760565
申请日：2012-03-19
申请人： NISSAN CHEMICAL IND LTD
发明人： SAKAMOTO RIKIMARU , SAKAIDA YASUSHI , HO BANGCHING
IPC分类号： G03F7/32 , G03F7/09 , G03F7/11 , G03F7/26 , G03F7/40 , H01L21/027 , H01L21/033 , H01L21/306
CPC分类号： G03F7/325 , G03F7/094 , G03F7/11 , G03F7/26 , H01L21/027 , H01L21/0275 , H01L21/0337 , H01L21/306
摘要： There is provided a developer not causing pattern collapse during the formation of a fine pattern and a pattern formation method using the developer. A developer used in a lithography process, comprising a polymer for forming a dry-etching mask and an organic solvent. The polymer is preferably a curable resin different from a curable resin forming a resist film. The developer is preferably used after exposure of the resist film. The organic solvent in the developer is preferably butyl acetate or a mixed solvent of butyl acetate and an alcohol, or 2-pentanone or a mixed solvent of 2-pentanone and an alcohol. A method for producing a semiconductor device comprising: (A) applying a resist to a semiconductor substrate to form a resist film and exposing the resist film; (B) bringing a surface of the resist film into contact with the above-mentioned developer to form a layer of the polymer between patterns; and (C) removing the resist film by dry etching to form a reverse pattern using the polymer.

5. 发明公开

EP1757986A4 ANTIREFLECTION FILM FOR SEMICONDUCTOR CONTAINING CONDENSATION TYPE POLYMER 有权
标题翻译： ANTIREFLEXFILMFÜREINEN HALBLEITER MIT POLYMERDISKONDENSATIONSTYPS
公开(公告)号：EP1757986A4
公开(公告)日：2009-04-08
申请号：EP05728797
申请日：2005-04-06
申请人： NISSAN CHEMICAL IND LTD
发明人： KISHIOKA TAKAHIRO , SAKAMOTO RIKIMARU , HIROI YOSHIOMI , MARUYAMA DAISUKE
IPC分类号： G03F7/11 , C08G61/12 , C08G73/06 , C08L79/04 , C09D163/00 , C09D179/04 , G02B1/11 , G03F7/09 , H01L21/027
CPC分类号： C08G73/0616 , C08G61/122 , C08G61/123 , C08G73/0638 , C08L79/04 , G02B1/111 , G03F7/091 , Y10S438/952
摘要： [PROBLEMS] To provide an antireflection film that exhibits a high light reflection preventing effect, being free from intermixing with photoresists, and that can be employed in a lithography process using irradiation beam, such as those from ArF excimer laser and F2 excimer laser, and further to provide a composition for forming such an antireflection film. [MEANS FOR SOLVING PROBLEMS] There is provided an antireflection film forming composition characterized by containing a polymer having a pyrimidinetrione structure, imidazolidinedione structure, imidazolidinetrione structure or triazinetrione structure and containing a solvent.
摘要翻译：本发明的目的在于提供一种抗光反射防止效果高，且不会与光致抗蚀剂混合的防反射膜，并且能够用于利用ArF准分子激光器和F2准分子激光器等的照射光的光刻工序中，进一步提供用于形成这种抗反射膜的组合物。 [解决问题的手段]提供一种防反射膜形成用组合物，其特征在于，含有具有嘧啶三酮结构，咪唑烷二酮结构，咪唑烷三酮结构或三嗪三酮结构的聚合物，且含有溶剂。

6. 发明公开

EP2937385A4 BOTTOM LAYER FILM-FORMING COMPOSITION OF SELF-ORGANIZING FILM CONTAINING STYRENE STRUCTURE 审中-公开
标题翻译：底层膜形成组成一个自组织，胶片含苯乙烯结构
公开(公告)号：EP2937385A4
公开(公告)日：2016-07-20
申请号：EP13864564
申请日：2013-12-16
申请人： NISSAN CHEMICAL IND LTD
发明人： SOMEYA YASUNOBU , WAKAYAMA HIROYUKI , ENDO TAKAFUMI , SAKAMOTO RIKIMARU
IPC分类号： C08L25/04 , C08F12/08 , C08K5/3447 , C09D125/08 , G03F7/38 , H01L21/027
CPC分类号： C09D125/14 , C08F212/08 , C09D125/08 , C09D153/00 , G02B1/111 , G03F7/0002 , G03F7/09 , Y10T428/24802 , C08F2220/325 , C08F2220/281 , C08F212/14 , C08F220/06 , C08F212/12 , C08F220/14
摘要： There is provided a composition for forming an underlayer film used for an underlayer of a self-organizing film. An underlayer film-forming composition of a self-organizing film, the underlayer film-forming composition comprising: a polymer consisting of a unit structure derived from an optionally substituted styrene and a unit structure derived from a crosslink forming group-containing compound, the polymer containing 60 mol% to 95 mol% of the unit structure derived from the styrene and 5 mol% to 40 mol% of the unit structure derived from the crosslink forming group-containing compound relative to the whole unit structures of the polymer. The crosslink forming group is a hydroxy group, an epoxy group, a protected hydroxy group, or a protected carboxy group. The crosslink forming group-containing compound is hydroxyethyl methacrylate, hydroxyethyl acrylate, hydroxypropyl methacrylate, hydroxypropyl acrylate, hydroxystyrene, acrylic acid, methacrylic acid, glycidyl methacrylate, or glycidyl acrylate.

7. 发明公开

EP2251742A4 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND METHOD FOR FORMING RESIST PATTERN USING THE SAME 有权
标题翻译：成分形成抗蚀剂下层膜和方法形成抗蚀该结构
公开(公告)号：EP2251742A4
公开(公告)日：2011-03-23
申请号：EP09712004
申请日：2009-02-19
申请人： NISSAN CHEMICAL IND LTD
发明人： SAKAMOTO RIKIMARU , ENDO TAKAFUMI
IPC分类号： C08G59/42 , G03F7/09 , G03F7/11
CPC分类号： G03F7/091 , C08G59/1455 , C08G63/20 , C08G63/42 , C08G63/668 , C08G63/6854

8. 发明公开

EP1876495A4 COMPOSITION COMPRISING POLYMER HAVING ETHYLENE-DICARBONYL STRUCTURE FOR USE IN FORMING ANTI-REFLECTIVE COATING FOR LITHOGRAPHY 有权
标题翻译：涉及与ETHYLENDICARBONYLSTRUKTUR聚合物用在抗REFLEX涂料的光刻的形成
公开(公告)号：EP1876495A4
公开(公告)日：2010-07-21
申请号：EP06731784
申请日：2006-04-13
申请人： NISSAN CHEMICAL IND LTD
发明人： SAKAMOTO RIKIMARU
IPC分类号： G03F7/11 , C08G59/42 , H01L21/027
CPC分类号： G03F7/091 , C08G59/4207 , Y10S438/952

9. 发明公开

EP1560070A4 COMPOSITION FOR FORMING ANTIREFLECTION FILM FOR LITHOGRAPHY 有权
标题翻译： ZUSAMMENSETZUNG ZUR BILDUNG EINER ANTIREFLEXSCHICHT F R DIE LITHOGRAPHIE
公开(公告)号：EP1560070A4
公开(公告)日：2006-02-08
申请号：EP03751376
申请日：2003-10-08
申请人： NISSAN CHEMICAL IND LTD
发明人： KISHIOKA TAKAHIRO , MIZUSAWA KEN-ICHI , ENOMOTO TOMOYUKI , SAKAMOTO RIKIMARU , NAKAYAMA KEISUKE , KAWAMURA YASUO
IPC分类号： G03F7/11 , C07D251/34 , G03F7/038 , G03F7/09 , H01L21/027
CPC分类号： H01L21/0276 , G03F7/038 , G03F7/091 , Y10S430/106
摘要： A composition for forming an antireflection film, which comprises a compound, an oligomer or a polymer comprising a triazine-trione moiety having a hydroxyalkyl structure as a substitute on a nitrogen atom. The composition can provide an antireflection film which exhibits good absorptivity for a light having a wavelength suitable for use in the production of a semiconductor device, has high antireflection effect, and exhibits a dry etching rate greater than that of a photoresist layer.
摘要翻译：提供了一种用于形成用于抗反射涂层的抗反射涂层的组合物，其在用于制造半导体器件的波长处具有良好的吸收光，其对光反射具有高保护效果，其具有高的干蚀刻速率与光致抗蚀剂层相比。具体地，用于形成抗反射涂层的组合物含有在氮原子上具有羟烷基结构作为取代基的三嗪三酮化合物，低聚物化合物或高分子化合物。

10. 发明公开

EP2832807A4 UNDERLAYER FILM FORMING COMPOSITION FOR SELF-ASSEMBLED FILMS 审中-公开
标题翻译：下层膜形成用组合物自身建设FILMS
公开(公告)号：EP2832807A4
公开(公告)日：2015-10-21
申请号：EP13769608
申请日：2013-03-22
申请人： NISSAN CHEMICAL IND LTD
发明人： WAKAYAMA HIROYUKI , NAKAJIMA MAKOTO , SAKAMOTO RIKIMARU
IPC分类号： C09D183/04 , B05D3/10 , C09D5/00 , G03F7/11 , G03F7/26 , H01L21/027
CPC分类号： C09D183/04 , B05D1/005 , B05D3/0254 , C08G77/80 , C09D5/002 , G03F7/0002 , H01L21/0332
摘要： There is a provided an underlayer film-forming composition which is used for an underlayer for a self-assembled film. An underlayer film-forming composition for self-assembled films, comprising a polysiloxane and a solvent. The polysiloxane may be a hydrolysis-condensation product of a silane containing a phenyl group-containing silane, or a hydrolysis-condensation product of a silane containing a silane of Formula (1) [R 2 Si(R 1 ) 3 (1)] wherein R 1 is an alkoxy group, an acyloxy group, or a halogen atom, and R 2 is an organic group containing a benzene ring optionally having a substituent and is a group bonded to the silicon atom through a Si-C bond, in a ratio of 10 to 100% by mol relative to the total silane, or a hydrolysis-condensation product of silanes containing the silane of Formula (1), a silane of Formula (2) [R 4 Si(R 3 ) 3 (2)], and a silane of Formula (3) [Si(R 5 ) 4 (3)] in a ratio of the silane of Formula (1):the silane of Formula (2):the silane of Formula (3) of 10 to 100:0 to 90:0 to 50 in terms of % by mol relative to the total silane:

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