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    • 1. 发明公开
    • Optical signal processing apparatus and optical signal processing method
    • Optische Signalverarbeitungsvorrichtung und optisches Signalverarbeitungsverfahren
    • EP1452896A2
    • 2004-09-01
    • EP04012363.0
    • 1997-09-01
    • Nippon Telegraph and Telephone Corporation
    • Kurokawa, TakashiTsuda, HiroyukiOkamoto, KatsunariNaganuma, KazunoriIshii, TetsuyoshiTakenouchi, Hirokazu
    • G02B6/293
    • G02B6/12011G02B6/12007G02B6/12014G02B6/12021G02B6/12023G02B6/12033G02B6/2931G02B6/29394G02B6/4215G02B2006/12104G02B2006/12107G03H1/0005G03H1/0808G03H2222/33
    • The present invention relates to an optical signal processing apparatus and optical signal processing method which enable generation, waveform shaping, waveform measurement, waveform recording, correlation processing, and the like of optical pulses of 1-10 ps. A basic construction of the optical signal processing apparatus includes an optical waveguide (9), (13), (22), (26), (33), (37), (41), (56), a first means (2), (10), (14), (25), (36), (42), (57) for equally distributing output light of the optical waveguide, an optical waveguide comprising an aggregate of optical waveguides changing in optical length by a constant interval, an arrayed waveguide (3), (11), (15), (24), (32), (43), (58) for dividing the output light, second means (4), (12), (16), (23), (34), (35), (59) for focusing optical output of the arrayed waveguide, and a mirror (110), (402), (2021), (2048), (2115) for receiving and reflecting incident light focused by the second means. Or, the apparatus includes an optical waveguide, first means for equally distributing output light of the optical waveguide, an arrayed waveguide comprising an aggregate of optical waveguides changing in optical length by a constant interval for dividing the output light, second means for focusing optical output of the arrayed waveguide, and a spatial filter (5), (17), (109) for receiving light focused by the second means to distribute the incident light on a straight line and making desired amplitude or phase modulation of the light according to the position on the straight line and reflecting the light.
    • 光信号处理装置和光信号处理方法技术领域本发明涉及能够进行1-10ps光脉冲的生成,波形整形,波形测量,波形记录,相关处理等的光信号处理装置和光信号处理方法。 光信号处理装置的基本结构包括光波导(9),(13),(22),(26),(33),(37),(41),(56) ),(10),(14),(25),(36),(42),(57),用于均匀分配光波导的输出光;光波导,包括光波长聚集体, 用于分割输出光的阵列波导(3),(11),(15),(24),(32),(43),(58),第二装置(4),(12) 用于聚焦阵列波导的光输出的反射镜(110),(34),(34),(35),(59)以及反射镜(110),(402),(2021),(2048),(2115) 接收和反映第二种手段聚焦的入射光。 或者,该装置包括光波导,用于均匀地分配光波导的输出光的第一装置,包括光学波长的聚集体的阵列波导,光波长的集合以恒定的间隔改变以分割输出光;第二装置,用于聚焦光输出 和用于接收由第二装置聚焦的光的空间滤波器(5),(17),(109),以将入射光分布在直线上,并根据所述第二装置对光进行所需的幅度或相位调制 直线上的位置并反射光。
    • 6. 发明公开
    • Vertical-cavity surface-emitting laser and method for manufacturing the same
    • 激光雷达激光雷达
    • EP0784363A2
    • 1997-07-16
    • EP96309451.1
    • 1996-12-23
    • Nippon Telegraph and Telephone Corporation
    • Ohiso, YoshitakaItoh, YoshioAmano, ChikaraKohama, YoshitakaTateno, KoutaTakenouchi, HirokazuKurokawa, Takashi
    • H01S3/085H01S3/19H01L33/00
    • B82Y20/00H01S5/18305H01S5/18308H01S5/18311H01S5/1833H01S5/1838H01S5/2063H01S5/2224H01S5/34306H01S5/3434H01S2301/176
    • A vertical-cavity surface-emitting semiconductor laser has first and second semiconductor multi-layered films (11,13), an active layer (15), and third and fourth semiconductor multi-layered films (12,14) which are piled up on a GaAs substrate (16) in that order. Furthermore, the first film (11) is formed by piling up Al x-1 Ga 1-x1 As layers (0 ≤ x1 ≤ 1) and A1 x2 Ga 1-x2 As layers (0 ≤ x2 ≤ 1) one after the other by turns. The second film (13) is formed by piling up In x3 Ga 1-x3 As y3 P 1-y3 layers (0 ≤ x3, y3 ≤ 1) and In x4 Ga 1-x4 As y4 P 1-y4 layers (0 ≤ x4, y4 ≤ 1) one after the other by turns. The active layer (15) is provided as an In x5 Ga 1-x5 As y5 P 1-y5 layer (0 ≤ x5, y5 ≤ 1). The third film (14) is formed by piling up In x6 Ga 1- x6 As y6 P 1-y6 layers (0 ≤ x6, y6 ≤ 1) and In x7 Ga 1- x7 As y7 P 1-y7 layers (0 ≤ x7, y7 ≤ 1) one after the other by turns. The fourth film (12) is formed by piling up Al x8 Ga 1-x8 As layers (0 ≤ x8 ≤ 1) and Al x9 Ga 1-x9 As layers (0 ≤x9 ≤1) one after the other by turns. In each film, each layer has a thickness corresponding to a value obtained by dividing an emission wavelength by a refractive index and 4.
    • 垂直腔表面发射半导体激光器具有堆叠在第一和第二半导体多层膜(11,13),有源层(15)和第三和第四半导体多层膜(12,14)上 GaAs衬底(16)。 此外,第一膜(11)通过一个接一个地堆叠Alx-1Ga1-x1As层(0≤x1≤1)和A1x2Ga1-x2As层(0≤x2≤1)形成。 第二膜(13)通过一个接一个地堆叠Inx3Ga1-x3Asy3P1-y3层(0≤x3,y3≤1)和Inx4Ga1-x4Asy4P1-y4层(0≤x4,y4≤1)形成。 有源层(15)被设置为Inx5Ga1-x5Asy5P1-y5层(0≤x5,y5≤1)。 通过依次堆叠In x6Ga1-x6Asy6P1-y6层(0≤x6,y6≤1)和Inx7Ga1-x7Asy7P1-y7层(0≤x7,y7≤1)形成第三膜(14)。 第四膜(12)通过一个接一个地叠加Al x Ga Ga 1-x 38 As层(0≤x8≤1)和Al x 9 Ga 1-x 9 As层(0≤x9≤1)而形成。 在每个膜中,每个层具有对应于通过将发射波长除以折射率和4获得的值的厚度