专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明公开

EP2966738A1 SURFACE EMITTING LASER AND OPTICAL COHERENCE TOMOGRAPHY APPARATUS 审中-公开
标题翻译： OBERFLÄCHENEMITTIERENDER激光开发商KOHÄRENZTOMOGRAFIEVORRICHTUNG
公开(公告)号：EP2966738A1
公开(公告)日：2016-01-13
申请号：EP15176035.2
申请日：2015-07-09
申请人： Canon Kabushiki Kaisha
发明人： NAGATOMO, Yasuhiro
IPC分类号： H01S5/183 , A61B5/00
CPC分类号： H01S5/18366 , A61B5/0066 , G01B9/02001 , G01B9/02091 , H01S5/10 , H01S5/1039 , H01S5/12 , H01S5/125 , H01S5/183 , H01S5/1833 , H01S5/18333 , H01S5/18361 , H01S5/18363 , H01S5/187
摘要： In order to provide a wavelength tunable surface emitting laser capable of improving a wavelength tuning efficiency, provided is a surface emitting laser, including: a first reflector (100); a semiconductor cavity (150) including an active layer (120); and a second reflector (110), the first reflector, the semiconductor cavity, and the second reflector being formed in the stated order, a gap portion (130) being formed between the first reflector and a semiconductor layer, a cavity length being tunable, in which the surface emitting laser has a high reflectivity structure formed between the gap portion and the semiconductor cavity, and an expression of "(λ/2)×m+λ/8
摘要翻译：为了提供能够提高波长调谐效率的波长可调谐表面发射激光器，提供了一种表面发射激光器，包括：第一反射器（100）; 包括有源层（120）的半导体腔（150）; 和第二反射器（110），所述第一反射器，所述半导体腔和所述第二反射器按照所述顺序形成，在所述第一反射器和半导体层之间形成间隙部分（130），空腔长度可调，其中表面发射激光器具有形成在间隙部分和半导体腔之间的高反射率结构，并且“（»/ 2）×m +»/ 8

2. 发明公开

EP2628219A1 SURFACE EMITTING LASER, SURFACE-EMITTING-LASER ARRAY, AND IMAGE FORMING APPARATUS 有权
标题翻译：表面发射激光器，OBERFLÄCHENEMITTIERENDES激光器阵列及摄像装置
公开(公告)号：EP2628219A1
公开(公告)日：2013-08-21
申请号：EP11782690.9
申请日：2011-10-05
申请人： Canon Kabushiki Kaisha
发明人： IKUTA, Mitsuhiro
IPC分类号： H01S5/183
CPC分类号： H01S5/18 , B41J2/455 , B41J2/473 , H01S3/02 , H01S5/183 , H01S5/18313 , H01S5/1833 , H01S5/18361 , H01S5/18391 , H01S5/3202 , H01S5/423 , H01S2301/16 , H01S2301/166 , H01S2301/18
摘要： The present invention provides a surface emitting laser that provides a sufficient optical output and is suitable as a light source intended for electrophotographic apparatuses, and a surface-emitting-laser array and an image forming apparatus each including the surface emitting laser. The surface emitting laser includes a first stepped structure on a front surface of a front mirror. In the first stepped structure, a difference L between an optical path length in a first area and an optical path length in a second area satisfies the following expression: (¼+N)λ

3. 发明公开

EP2104192A1 SURFACE-EMITTING LASER AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译： VERFAHREN ZU SEINER HERSTELLUNG的OBERFLÄCHENEMITTIERENDER激光
公开(公告)号：EP2104192A1
公开(公告)日：2009-09-23
申请号：EP07850824.9
申请日：2007-12-18
申请人： International Business Machines Corporation
发明人： NAKAGAWA, Shigeru
IPC分类号： H01S5/183
CPC分类号： H01S5/1833 , B82Y20/00 , H01S5/18311 , H01S5/18316 , H01S5/18347 , H01S5/18363 , H01S5/2081 , H01S5/3432 , H01S2301/163
摘要： Disclosed is a surface emitting laser including a lower Bragg reflector, a resonator and an upper Bragg reflector. The lower Bragg reflector is provided on top of a semiconductor substrate, and includes a plurality of semiconductor layers. The resonator is provided on top of the lower Bragg reflector and includes an active layer, a lower semiconductor layer and an upper semiconductor layer. The lower semiconductor layer is provided under the active layer, and includes a first insulating layer having an aperture. The upper semiconductor layer is provided on top of the active layer, and includes a second insulating layer having an aperture. The upper Bragg reflector is provided on top of the resonator, and includes a plurality of semiconductor layers. In this surface emitting laser, the uppermost layer among the plurality of semiconductor layers in the lower Bragg reflector forms an air gap, which is larger than the aperture of the first insulating layer, while the lowermost layer among the plurality of semiconductor layers in the upper Bragg reflector forms an air gap, which is larger than the aperture of the second insulating layer.
摘要翻译：公开了一种包括下布拉格反射器，谐振器和上布拉格反射器的表面发射激光器。下部布拉格反射器设置在半导体衬底的顶部，并且包括多个半导体层。谐振器设置在下布拉格反射器的顶部，并且包括有源层，下半导体层和上半导体层。下半导体层设置在有源层下方，并且包括具有孔径的第一绝缘层。上半导体层设置在有源层的顶部，并且包括具有孔径的第二绝缘层。上布拉格反射器设置在谐振器的顶部，并且包括多个半导体层。在该表面发射激光器中，下布拉格反射器中的多个半导体层中的最上层形成比第一绝缘层的孔径大的气隙，而上部的多个半导体层中的最下层布拉格反射器形成比第二绝缘层的孔径大的气隙。

4. 发明授权

EP1700300B1 IMPROVED OPTICAL READ-OUT. 有权
标题翻译：改进的光学阅读
公开(公告)号：EP1700300B1
公开(公告)日：2008-03-05
申请号：EP04806394.5
申请日：2004-12-14
申请人： Koninklijke Philips Electronics N.V.
发明人： ANDERSEN, Ole, Klembt Société Civile SPID , HENDRIKS, Robert, Frans, Maria Société Civile SPID , VAN DER LEE, Alexander, Marc Société Civile SPID , VAN DER WERF, Jan, Evert Société Civile SPID
IPC分类号： G11B7/13 , G11B7/135 , H01S5/183
CPC分类号： G11B7/13 , G11B7/125 , H01S5/0608 , H01S5/06236 , H01S5/18305 , H01S5/18311 , H01S5/1833 , H01S5/18355
摘要： An arrangement for read-out of information from an optical information carrier is disclosed. The system comprises a VCSEL for improving the signal-to-noise ratio of light reflected from and modulated by an information carrier. The VCSEL has a substrate that transmits the emission from the active regions of the VCSEL. Thereby, the need for beam-splitters in the detection branch of the device is completely eliminated.

5. 发明授权

EP1306943B1 Laser with a selectively changed current confining layer 失效
标题翻译：激光具有选择性地修改的电流限制层
公开(公告)号：EP1306943B1
公开(公告)日：2004-08-18
申请号：EP03075005.3
申请日：1998-03-04
申请人： HONEYWELL INC.
发明人： Guenter, James K. , Johnson, Ralph H.
IPC分类号： H01S5/183 , H01L33/00
CPC分类号： H01S5/1833 , H01S5/0425 , H01S5/18311 , H01S5/2081

6. 发明公开

EP1436867A2 A SEMICONDUCTOR LASER BASED ON THE EFFECT OF PHOTONIC BAND GAP CRYSTAL-MEDIATED FILTRATION OF HIGHER MODES OF LASER RADIATION AND METHOD OF MAKING SAME 有权
标题翻译：晶体半导体激光基于影响开关激光辐射和方法，光子带过滤较高模式用于生产
公开(公告)号：EP1436867A2
公开(公告)日：2004-07-14
申请号：EP02765307.0
申请日：2002-08-29
申请人： PBC Lasers Ltd
发明人： SHCHUKIN, Vitaly , LEDENSTOV, Nikolai
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , B82Y10/00 , H01S5/1021 , H01S5/105 , H01S5/1833 , H01S5/18341 , H01S5/2027 , H01S5/3211 , H01S2301/166
摘要： A semiconductor laser (100) having a low beam divergence is disclosed. The laser includes at least one waveguide comprising an active layer (108) generating an optical gain by injection of a current, a photonic band gap crystal (120) having the refractive index modulation in the direction perpendicular to the propagation of the emitted light, and at least one defect (121). The active layer (108) is preferably placed within the defect (121). The photonic band gap crystal (120) and the defect are optimized such that the fundamental mode of laser radiation is localized at the defect (121) and decays away from the defect (121), while the other optical modes are extended over the photonic band gap crystal. Localization of the fundamental mode at the defect (121) results in the relative enhancement of the amplitude of the mode with respect to the other modes. Therefore, there is a larger confinement factor of the fundamental mode as compared to the confinement factor of the other modes. This enables efficient single-mode lasing from the laser having an extended waveguide.

7. 发明授权

EP0784363B1 Vertical-cavity surface-emitting laser and method for manufacturing the same 失效
标题翻译：垂直腔和处理它的制备的表面发射激光器
公开(公告)号：EP0784363B1
公开(公告)日：2000-10-11
申请号：EP96309451.1
申请日：1996-12-23
申请人： Nippon Telegraph and Telephone Corporation
发明人： Ohiso, Yoshitaka , Itoh, Yoshio , Amano, Chikara , Kohama, Yoshitaka , Tateno, Kouta , Takenouchi, Hirokazu , Kurokawa, Takashi
IPC分类号： H01S5/10 , H01S5/32 , H01L33/00
CPC分类号： B82Y20/00 , H01S5/18305 , H01S5/18308 , H01S5/18311 , H01S5/1833 , H01S5/1838 , H01S5/2063 , H01S5/2224 , H01S5/34306 , H01S5/3434 , H01S2301/176

8. 发明公开

EP0985255A1 LASER WITH A SELECTIVELY CHANGED CURRENT CONFINING LAYER 失效
标题翻译：具有选择性改变的电流限制层的激光器
公开(公告)号：EP0985255A1
公开(公告)日：2000-03-15
申请号：EP98911465.7
申请日：1998-03-04
申请人： HONEYWELL INC.
发明人： GUENTER, James, K. , JOHNSON, Ralph, H.
IPC分类号： H01S3/085
CPC分类号： H01S5/1833 , H01S5/0425 , H01S5/18311 , H01S5/2081
摘要： A laser structure is provided with two current confining layers of a material that is subject to oxidation in the presence of an oxidizing agent. The laser structure is shaped to expose edges of the current confining layers to permit the edges to be exposed to the oxidizing agent. The current confining layers are oxidized selectively to create electrically resistive material at the oxidized portions (100, 104) and electrically conductive material at the unoxidized portions (101, 105). The unoxidized portions (101, 105) of the layers are surrounded by the oxidized and electrically resistive portions in order to direct current from one electrical contact pad (14, 26) by passing through a preselected portion of an active region (20) of the laser. The laser structure can be a vertical cavity surface emitting laser. The device achieves the current confining and directing function without the need to use ion bombardment or implantation to provide the current confining structure within the body of the laser.
摘要翻译：激光器结构具有两个电流限制层，该两个电流限制层在氧化剂存在下经受氧化。激光器结构被成形为暴露电流限制层的边缘以允许边缘暴露于氧化剂。电流限制层被选择性地氧化以在氧化部分（100,104）产生电阻材料并在未氧化部分（101,105）产生导电材料。这些层的未氧化部分（101,105）被氧化和电阻部分包围，以便通过穿过该电极的有源区（20）的预选部分而从一个电接触垫（14,26）激光。激光器结构可以是垂直腔表面发射激光器。该装置不需要使用离子轰击或注入来提供激光器本体内的电流限制结构，就实现了电流限制和导向功能。

9. 发明授权

EP2628219B1 SURFACE EMITTING LASER, SURFACE-EMITTING-LASER ARRAY, AND IMAGE FORMING APPARATUS 有权
标题翻译： OBERFLÄCHENEMITTIERENDERLASER，OBERFLÄCHENEMITTIERENDESLASERARRAY UND BILDERZEUGUNGSVORRICHTUNG
公开(公告)号：EP2628219B1
公开(公告)日：2017-01-25
申请号：EP11782690.9
申请日：2011-10-05
申请人： Canon Kabushiki Kaisha
发明人： IKUTA, Mitsuhiro
IPC分类号： H01S5/183
CPC分类号： H01S5/18 , B41J2/455 , B41J2/473 , H01S3/02 , H01S5/183 , H01S5/18313 , H01S5/1833 , H01S5/18361 , H01S5/18391 , H01S5/3202 , H01S5/423 , H01S2301/16 , H01S2301/166 , H01S2301/18
摘要： The present invention provides a surface emitting laser that provides a sufficient optical output and is suitable as a light source intended for electrophotographic apparatuses, and a surface-emitting-laser array and an image forming apparatus each including the surface emitting laser. The surface emitting laser includes a first stepped structure on a front surface of a front mirror. In the first stepped structure, a difference L between an optical path length in a first area and an optical path length in a second area satisfies the following expression: (¼+N)λ
摘要翻译：本发明提供一种表面发射激光器，其提供足够的光学输出并且适合作为用于电子照相设备的光源，以及包括表面发射激光器的表面发射激光器阵列和图像形成装置。表面发射激光器包括在前反射镜的前表面上的第一阶梯结构。在第一阶梯结构中，第一区域的光路长度与第二区域的光程长度之间的差值L满足以下表达式：（¼+ N）λ<| L | <（¾+ N）λ其中 N是整数。

10. 发明公开

EP2756564A4 VERTICAL-CAVITY SURFACE-EMITTING LASERS 审中-公开
标题翻译：具有垂直腔的表面发射激光器
公开(公告)号：EP2756564A4
公开(公告)日：2014-09-24
申请号：EP11872532
申请日：2011-09-15
申请人： HEWLETT PACKARD DEVELOPMENT CO
发明人： FATTAL DAVID A , TAN MICHAEL RENNE TY , BEAUSOLEIL RAYMOND G
IPC分类号： H01S5/183 , H01S5/42
CPC分类号： H01S5/183 , H01S5/105 , H01S5/1833 , H01S5/18358 , H01S5/18363 , H01S5/187 , H01S5/4087 , H01S5/423

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式