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1. 发明公开

EP2251464A3 Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device 有权
标题翻译：外延基板为半导体装置，半导体装置和方法，用于制造外延衬底的半导体装置
公开(公告)号：EP2251464A3
公开(公告)日：2011-01-26
申请号：EP10250839.7
申请日：2010-04-27
申请人： NGK Insulators, Ltd.
发明人： Ichimura, Mikiya , Miyoshi, Makoto , Tanaka, Mitsuhiro
IPC分类号： C30B25/02 , H01L21/335 , H01L29/778 , C30B29/38 , H01L21/02
CPC分类号： C30B25/02 , C30B19/00 , C30B23/02 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/7786
摘要： An epitaxial substrate having preferable two dimensional electron gas characteristic and contact characteristic is provided in the present invention. A channel layer is formed on a base substrate with GaN. A spacer layer is formed on the channel layer with A1N. A barrier layer is formed on the spacer layer with group III nitride having a composition of In x Al y Ga z N (wherein x+y+z=1) and at least including In, Al, and Ga such that the composition of the barrier layer is within the range surrounded with four lines defined in accordance with the composition on a ternary phase diagram with InN, A1N, and GaN as vertexes.
摘要翻译：具有优选的二维电子气特性和接触特性的外延衬底中，本发明提供。沟道层形成在与氮化镓基体的基材。间隔层形成有A1N在沟道层上。阻挡层被形成在间隔层上具有In的组合物III族氮化物氮化铝铟镓Z N（worin X + Y + Z = 1），和至少包括In，Al和镓检查那样的组合物阻挡层是具有在雅舞蹈定义与以InN，AlN和GaN的三元相图为顶点组合物四行包围的范围内。

2. 发明公开

EP1610392A2 HEMT device 有权
标题翻译： HEMT-Anordnung
公开(公告)号：EP1610392A2
公开(公告)日：2005-12-28
申请号：EP05012752.1
申请日：2005-06-14
申请人： NGK INSULATORS, LTD.
发明人： Miyoshi, Makoto
IPC分类号： H01L29/778 , H01L29/20 , H01L29/205
CPC分类号： H01L29/7787 , H01L29/1075 , H01L29/2003 , H01L29/66469 , H01L29/7786
摘要： A semiconductor device includes an underlying layer made of a group-III nitride containing at least Al and formed on a substrate, and a group of stacked semiconductor layers including a first semiconductor layer made of a group-III nitride, preferably GaN, a second semiconductor layer made of AlN and a third semiconductor layer made of a group-III nitride containing at least Al, preferably Al x Ga 1-x N where x ≥ 0.2. The semiconductor device suppresses the reduction in electron mobility resulting from lattice defects and crystal lattice randomness. This achieves a HEMT device having a sheet carrier density of not less than 1×10 13 /cm 2 and an electron mobility of not less than 20000 cm 2 / V · s at a temperature of 15 K.
摘要翻译：半导体器件包括由至少包含Al并且形成在衬底上的III族氮化物制成的下层，以及包括由III族氮化物制成的第一半导体层，优选为GaN的第二半导体层，第二半导体由AlN制成的层和由至少包含Al的III族氮化物制成的第三半导体层，优选为Al x Ga 1-x N，其中x‰为0.2。半导体器件抑制由晶格缺陷和晶格随机性引起的电子迁移率的降低。这实现了在15K的温度下具有不小于1×10 13 / cm 2的片载体密度和不小于20000cm 2 / V·s的电子迁移率的HEMT器件。

3. 发明授权

EP2251464B1 Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device 有权
公开(公告)号：EP2251464B1
公开(公告)日：2019-01-16
申请号：EP10250839.7
申请日：2010-04-27
申请人： NGK Insulators, Ltd.
发明人： Ichimura, Mikiya , Miyoshi, Makoto , Tanaka, Mitsuhiro
IPC分类号： C30B25/02 , H01L21/335 , H01L29/778 , C30B29/38 , H01L21/02

4. 发明授权

EP2296172B1 Epitaxial substrate for semiconductor device, schottky junction structure, and leakage current suppression method for schottky junction structure 失效
标题翻译： Epitaxialsubstrate用于半导体器件，肖特基结的结构和方法用于泄漏电流抑制型肖特基结结构
公开(公告)号：EP2296172B1
公开(公告)日：2014-04-23
申请号：EP10172264.3
申请日：2010-08-09
申请人： NGK Insulators, Ltd.
发明人： Miyoshi, Makoto , Kuraoka, Yoshitaka , Sumiya, Shigeaki , Ichimura, Mikiya , Sugiyama, Tomohiko , Tanaka, Mitsuhiro
IPC分类号： H01L21/335 , H01L29/04 , H01L29/778
CPC分类号： H01L29/7787 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L29/045 , H01L29/2003 , H01L29/66462

5. 发明公开

EP2290675A2 Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device 失效
标题翻译：外延基板为半导体装置，半导体装置和方法，用于制造外延衬底的半导体装置
公开(公告)号：EP2290675A2
公开(公告)日：2011-03-02
申请号：EP10172643.8
申请日：2010-08-12
申请人： NGK Insulators, Ltd.
发明人： Miyoshi, Makoto , Kuraoka, Yoshitaka , Sumiya, Shigeaki , Ichimura, Mikiya , Sugiyama, Tomohiko , Tanaka, Mitsuhiro
IPC分类号： H01L21/335 , H01L29/20 , H01L29/778
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/201 , H01L29/66462
摘要： Provided is an epitaxial substrate capable of achieving a semiconductor device that has excellent schottky contact characteristics as well as satisfactory device characteristics. On a base substrate (1), a channel layer (3) formed of a first group III nitride that contains at least Al and Ga and has a composition of In x1 Al y1 Ga z1 N (x1+y1+z1=1) is formed. On the channel layer (3), a barrier layer (5) formed of a second group III nitride that contains at least In and Al and has a composition of In x2 Al y2 Ga z2 N (x2+y2+z2=1) is formed such that an In composition ratio of a near-surface portion is smaller than an In composition ratio of a portion other than the near-surface portion.
摘要翻译：本发明提供一种能够实现半导体器件的外延衬底确实具有优良的肖特基接触特性以及满意的器件特性。在基底基板（1），一个沟道层（3）形成的第一III族氮化物的那样至少含有Al和Ga，具有在X1的Al Y1镓Z1 n的组合物（X1 + Y1 + Z1 = 1）是形成。在沟道层（3），阻挡层（5）形成的第二III族氮化物做了至少含有In和Al，并具有在X2的Al Y2镓Z2 N（X2 + Y 2 + Z 2 = 1）的组合物 FORMED搜索的确在在表面附近部的组成比是比该表面附近部以外的部分的In组成比要小。

6. 发明授权

EP0797259B1 A thermoelectric conversion material and a process for producing the same 失效
标题翻译：它们的热电转换材料及其制造方法
公开(公告)号：EP0797259B1
公开(公告)日：2001-10-04
申请号：EP97301867.4
申请日：1997-03-19
申请人： NGK INSULATORS, LTD.
发明人： Imanishi, Yuichiro , Miyoshi, Makoto , Shinohara, Kazuhiko , Kobayashi, Masakazu
IPC分类号： H01L35/18 , H01L35/16
CPC分类号： H01L35/18

7. 发明公开

EP0797260A2 High temperature thermoelectric material and its production method 失效
标题翻译：热电联产材料höherTemperatur和Herstellungsverfahren desselben
公开(公告)号：EP0797260A2
公开(公告)日：1997-09-24
申请号：EP97301868.2
申请日：1997-03-19
申请人： NGK INSULATORS, LTD.
发明人： Imanishi, Yuichiro , Miyoshi, Makoto , Shinohara, Kazukio , Kobayashi, Masakazu
IPC分类号： H01L35/18
CPC分类号： C22C1/04 , C22C1/0491 , H01L35/18
摘要： An excellent thermoelectric material for high temperature use made of a sintered body of a relative density of at least 75 % consisting mainly of cobalt . antimony compounds having an elemental ratio Sb/(Co + any additives) = x of 2.7 3 (A phase), a monoclinic crystal system compound CoSb 2 (B phase) and a hexagonal crystal system compound CoSb (C phase), and constitutional ratio of these crystal phases is (I B + I c )/(I A + I B + I c )
摘要翻译：用于高温使用的优良热电材料由主要由钴组成的至少75％的相对密度的烧结体制成。元素比Sb /（Co +任意添加剂）= x为2.7

8. 发明公开

EP2290696A3 Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device 有权
标题翻译：用于半导体器件的外延衬底，半导体器件和用于半导体器件的外延衬底的制造方法
公开(公告)号：EP2290696A3
公开(公告)日：2012-09-12
申请号：EP10172363.3
申请日：2010-08-10
申请人： NGK Insulators, Ltd.
发明人： Miyoshi, Makoto , Kuraoka, Yoshitaka , Sumiya, Shigeaki , Ichimura, Mikiya , Sugiyama, Tomohiko , Tanaka, Mitsuhiro
IPC分类号： H01L29/778 , H01L29/201
摘要： Provided is an epitaxial substrate capable of achieving a semiconductor device that has excellent ohmic contact characteristics as well as satisfactory device characteristics. On a base substrate, a channel layer formed of a first group III nitride that contains at least Al and Ga and has a composition of In x1 Al y1 Ga z1 N (x1+y1+z1=1) is formed. On the channel layer, a barrier layer formed of a second group III nitride that contains at least In and Al and has a composition of In x2 Al y2 Ga z2 N (x2+y2+z2=1) is formed such that an In composition ratio of a near-surface portion is larger than an In composition ratio of a portion other than the near-surface portion.
摘要翻译：提供一种能够实现具有优异的欧姆接触特性以及令人满意的器件特性的半导体器件的外延衬底。在基底基板上，形成由至少含有Al和Ga且组成为Inx1Aly1Gaz1N（x1 + y1 + z1 = 1）的第一III族氮化物形成的沟道层。在沟道层上，形成由至少包含In和Al且具有In x2 Al y2 Ga z2 N（x2 + y2 + z2 = 1）的组成的第二III族氮化物形成的势垒层，使得近表面部分比近表面部分以外的部分的In组成比大。

9. 发明公开

EP2290696A2 Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device 有权
标题翻译：外延基板为半导体装置，半导体装置和方法，用于制造外延衬底的半导体装置
公开(公告)号：EP2290696A2
公开(公告)日：2011-03-02
申请号：EP10172363.3
申请日：2010-08-10
申请人： NGK Insulators, Ltd.
发明人： Miyoshi, Makoto , Kuraoka, Yoshitaka , Sumiya, Shigeaki , Ichimura, Mikiya , Sugiyama, Tomohiko , Tanaka, Mitsuhiro
IPC分类号： H01L29/778 , H01L29/201
摘要： Provided is an epitaxial substrate capable of achieving a semiconductor device that has excellent ohmic contact characteristics as well as satisfactory device characteristics. On a base substrate, a channel layer formed of a first group III nitride that contains at least Al and Ga and has a composition of In x1 Al y1 Ga z1 N (x1+y1+z1=1) is formed. On the channel layer, a barrier layer formed of a second group III nitride that contains at least In and Al and has a composition of In x2 Al y2 Ga z2 N (x2+y2+z2=1) is formed such that an In composition ratio of a near-surface portion is larger than an In composition ratio of a portion other than the near-surface portion.
摘要翻译：本发明提供一种能够实现半导体器件的外延衬底确实具有优良的欧姆接触特性以及满意的器件特性。上的基底基板，形成在第一III族氮化物制成的沟道层那样至少含有Al和Ga，具有在X1的Al Y1 Z1镓N中的一个组合物（X1 + Y1 + Z1 = 1）形成。在沟道层，形成的第二III族氮化物构成的势垒层做至少包含In和Al，并具有在X2的Al Y2镓Z2 N中的一个组合物（X2 + Y 2 + Z 2 = 1）形成搜索的确在In组成的近表面部分的比大于在除表面附近部以外的部分的In组成比。

10. 发明公开

EP2251464A2 Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device 有权
标题翻译：外延基板为半导体装置，半导体装置和方法，用于制造外延衬底的半导体装置
公开(公告)号：EP2251464A2
公开(公告)日：2010-11-17
申请号：EP10250839.7
申请日：2010-04-27
申请人： NGK Insulators, Ltd.
发明人： Ichimura, Mikiya , Miyoshi, Makoto , Tanaka, Mitsuhiro
IPC分类号： C30B25/02 , H01L21/335 , H01L29/778 , C30B29/38 , H01L21/02
CPC分类号： C30B25/02 , C30B19/00 , C30B23/02 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/7786
摘要： An epitaxial substrate having preferable two dimensional electron gas characteristic and contact characteristic is provided in the present invention. A channel layer is formed on a base substrate with GaN. A spacer layer is formed on the channel layer with A1N. A barrier layer is formed on the spacer layer with group III nitride having a composition of In x Al y Ga z N (wherein x+y+z=1) and at least including In, Al, and Ga such that the composition of the barrier layer is within the range surrounded with four lines defined in accordance with the composition on a ternary phase diagram with InN, A1N, and GaN as vertexes.

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