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1. 发明授权

EP2309537B1 High voltage floating well in a silicon die 有权转让
标题翻译：在硅衬底中的浮动高电压桶
公开(公告)号：EP2309537B1
公开(公告)日：2016-06-08
申请号：EP10176546.9
申请日：2010-09-14
申请人： Monolithic Power Systems, Inc.
发明人： Hsing, Michael R. , Moyer, James C.
IPC分类号： H01L21/761 , H03K17/082 , H01L27/06 , H01L29/36 , H01L29/06 , H01L49/02 , H02M3/158 , H01L29/10
CPC分类号： H03K17/082 , H01L21/761 , H01L28/20 , H01L29/06 , H01L29/1087 , H02M3/1588 , Y02B70/1466

2. 发明公开

EP2309537A3 High voltage floating well in a silicon die 有权转让
标题翻译：高电压漂移在硅芯片中
公开(公告)号：EP2309537A3
公开(公告)日：2011-08-03
申请号：EP10176546.9
申请日：2010-09-14
申请人： Monolithic Power Systems, Inc.
发明人： Hsing, Michael R. , Moyer, James C.
IPC分类号： H01L21/761 , H03K17/082 , H01L27/06 , H01L29/36 , H01L29/06 , H01L21/02 , H02M3/158
CPC分类号： H03K17/082 , H01L21/761 , H01L28/20 , H01L29/06 , H01L29/1087 , H02M3/1588 , Y02B70/1466
摘要： Disclosed is an electronic device, comprising a substrate (208), an n-doped buried layer (210), an n-doped region (212,220,222) adjacent to the n-doped buried layer and the substrate, the n-doped region comprising a first n-doped region (212) adjacent to the n-doped buried layer and having a first doping concentration, and a second n-doped region (222) not adjacent to the n-doped buried layer and having a second doping concentration less than the first doping concentration, and a p-doped region (224) adjacent to the second n-doped region and to the substrate, and a spiral resistor (228) coupled to the first n-doped region and to the p-doped region. Thus, regions 212,214,216 and 218 are electrically isolated from the rest of the circuit, which is important for devices integrated in these regions that may be at or near the high voltage (VIN), for example in DC-to-DC converters.
摘要翻译：公开了一种电子器件，包括衬底（208），n掺杂埋层（210），与n掺杂埋层和衬底相邻的n掺杂区域（212,220,222），n掺杂区域包括与所述n掺杂埋层相邻并具有第一掺杂浓度的第一n掺杂区（212）以及不与所述n掺杂埋层相邻且具有小于第二掺杂浓度的第二n掺杂区（222）第一掺杂浓度以及与第二n掺杂区域和衬底相邻的p掺杂区域（224）以及耦合到第一n掺杂区域和p掺杂区域的螺旋电阻（228）。因此，区域212,214,216和218与电路的其余部分电隔离，这对于例如在DC-DC转换器中可能处于或接近高电压（VIN）的这些区域中集成的器件是重要的。

3. 发明公开

EP2309537A2 High voltage floating well in a silicon die 有权转让
标题翻译： Schwebende Hochvolt-Wanne在einem Siliziumsubstrat
公开(公告)号：EP2309537A2
公开(公告)日：2011-04-13
申请号：EP10176546.9
申请日：2010-09-14
申请人： Monolithic Power Systems, Inc.
发明人： Hsing, Michael R. , Moyer, James C.
IPC分类号： H01L21/761 , H02M3/158 , H03K19/003 , H01L27/06 , H01L21/02
CPC分类号： H03K17/082 , H01L21/761 , H01L28/20 , H01L29/06 , H01L29/1087 , H02M3/1588 , Y02B70/1466
摘要： Disclosed is an electronic device, comprising a substrate (208), an n-doped buried layer (210), an n-doped region (212,220,222) adjacent to the n-doped buried layer and the substrate, the n-doped region comprising a first n-doped region (212) adjacent to the n-doped buried layer and having a first doping concentration, and a second n-doped region (222) not adjacent to the n-doped buried layer and having a second doping concentration less than the first doping concentration, and a p-doped region (224) adjacent to the second n-doped region and to the substrate, and a spiral resistor (228) coupled to the first n-doped region and to the p-doped region. Thus, regions 212,214,216 and 218 are electrically isolated from the rest of the circuit, which is important for devices integrated in these regions that may be at or near the high voltage (VIN), for example in DC-to-DC converters.
摘要翻译：公开了一种电子器件，其包括衬底（208），n掺杂掩埋层（210），与n掺杂掩埋层和衬底相邻的n掺杂区域（212,220,222），所述n掺杂区域包括与n掺杂掩埋层相邻并且具有第一掺杂浓度的第一n掺杂区域（212）和不与n掺杂掩埋层相邻并且具有小于第二掺杂浓度的第二掺杂浓度第一掺杂浓度和与第二n掺杂区域和衬底相邻的p掺杂区域（224）以及耦合到第一n掺杂区域和p掺杂区域的螺旋电阻器（228）。因此，区域212,214,216和218与电路的其余部分电隔离，这对于集成在可能处于或接近高电压（VIN）的这些区域中的器件是重要的，例如在DC-DC转换器中。

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