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1. 发明公开

EP3261138A1 PIEZOELECTRIC PTZT FILM, AND PROCESS FOR PRODUCING LIQUID COMPOSITION FOR FORMING SAID PIEZOELECTRIC FILM 有权转让
标题翻译：压电PTZT膜及用于制造用于形成所述压电膜的液体组合物的方法
公开(公告)号：EP3261138A1
公开(公告)日：2017-12-27
申请号：EP16752431.3
申请日：2016-02-15
申请人： Mitsubishi Materials Corporation
发明人： DOI Toshihiro , SOYAMA Nobuyuki
IPC分类号： H01L41/187 , B41J2/14 , B41J2/16 , C01G35/00 , H01L41/318 , H01L41/319 , H01L41/43
CPC分类号： H01L41/18 , B41J2/14 , B41J2/16 , C01G35/00 , C01G35/006 , C04B35/499 , H01L41/187 , H01L41/318 , H01L41/319 , H01L41/43
摘要： A piezoelectric PTZT film is formed of a metal oxide having a perovskite structure including Pb, Ta, Zr, and Ti, in which the metal oxide further includes carbon, and a content of the carbon is 80 to 800 ppm by mass. In a process for producing a liquid composition for forming a piezoelectric film, a Ta alkoxide, a Zr alkoxide, β-diketones, and a diol are refluxed, a Ti alkoxide is added into a first synthesis solution obtained by the refluxing, and then refluxing is performed again, a Pb compound is added into a second synthesis solution obtained by performing the additional refluxing, and then refluxing is performed again, a solvent is removed from a third synthesis solution obtained by performing the additional refluxing, and then, dilution with alcohol is performed, to produce the liquid composition for forming a piezoelectric PTZT film. When the total amount of the Ta alkoxide, the Zr alkoxide, and the Ti alkoxide is set as 1 mole, the liquid composition for forming a piezoelectric PTZT film includes the diol and the β-diketones with fractions so that the content of diol is 7 to 11 moles and the content of β-diketones is 1.5 to 3.0 moles.
摘要翻译：压电PTZT膜由具有包含Pb，Ta，Zr和Ti的钙钛矿结构的金属氧化物形成，其中所述金属氧化物还包含碳，并且所述碳的含量为80质量ppm至800质量ppm。在制造用于形成压电膜的液体组合物的方法中，使Ta醇盐，Zr醇盐，β-二酮和二醇回流，将Ti醇盐加入通过回流获得的第一合成溶液中，然后回流再将Pb化合物加入到通过进行额外的回流得到的第二合成溶液中，然后再进行回流，从进行附加回流得到的第三合成溶液中除去溶剂，然后用醇以制造用于形成压电PTZT膜的液体组合物。当Ta醇盐，Zr醇盐和Ti醇盐的总量设定为1摩尔时，用于形成压电PTZT膜的液体组合物包含具有分数的二醇和β-二酮，使得二醇的含量为7 至11摩尔，β-二酮的含量为1.5至3.0摩尔。

2. 发明公开

EP3125318A1 COMPOSITION FOR FORMING MANGANESE- AND NIOBIUM-DOPED PZT PIEZOELECTRIC FILM 有权转让
标题翻译： ZUSAMMENSETZUNG ZUR BILDUNG VON MANGAN- UND NIOBIUMDOTIERTER PIEZOELEKTRISCHER PZT-SCHICHT
公开(公告)号：EP3125318A1
公开(公告)日：2017-02-01
申请号：EP15770305.9
申请日：2015-03-12
申请人： Mitsubishi Materials Corporation
发明人： DOI Toshihiro , SAKURAI Hideaki , SOYAMA Nobuyuki
IPC分类号： H01L41/318 , C04B35/491 , H01L41/187
摘要： A composition used for forming a PZT-based piezoelectric film formed of Mn and Nb co-doped composite metal oxides is provided, in which the composition includes PZT-based precursors so that a metal atom ratio (Pb:Mn:Nb:Zr:Ti) in the composition satisfies (1.00 to 1.25):(0.002 to 0.056):(0.002 to 0.056):(0.40 to 0.60):(0.40 to 0.60), a rate of Mn is from 0.20 to 0.80 when the total of metal atom rates of Mn and Nb is 1, a rate of Zr is from 0.40 to 0.60 when the total of metal atom rates of Zr and Ti is 1, and the total rate of Zr and Ti is from 0.9300 to 0.9902 when the total of metal atom rates of Mn, Nb, Zr, and Ti is 1.
摘要翻译：提供了用于形成由Mn和Nb共掺杂复合金属氧化物形成的PZT基压电膜的组合物，其中组合物包括基于PZT的前体，使得金属原子比（Pb：Mn：Nb：Zr：Ti ）的组成满足（1.00〜1.25）：（0.002〜0.056）：（0.002〜0.056）：（0.40〜0.60）：（0.40〜0.60），当金属原子的总量为当Zr和Ti的金属原子总量为1时，Mn和Nb的比例为1，Zr的含量为0.40〜0.60，Zr和Ti的总量为0.9300〜0.9902时，金属原子 Mn，Nb，Zr和Ti的比率为1。

3. 发明公开

EP3813131A1 LIQUID COMPOSITION FOR FORMING KNN FILM AND METHOD FOR FORMING KNN FILM USING SAID LIQUID COMPOSITION 无效
公开(公告)号：EP3813131A1
公开(公告)日：2021-04-28
申请号：EP19822480.0
申请日：2019-06-07
申请人： Mitsubishi Materials Corporation
发明人： TSUJIUCHI Naoto , DOI Toshihiro , SOYAMA Nobuyuki
IPC分类号： H01L41/317 , H01L41/187
摘要： This liquid composition for forming a KNN film includes an organic metal compound including an organic potassium compound, an organic sodium compound, and an organic niobium compound, and a solvent. In this liquid composition for forming a KNN film, the organic potassium compound and the sodium compound are each metal salts of a carboxylic acid represented by General Formula C n H 2n+1 COOH (here, 4≤n≤8), the organic niobium compound is a niobium alkoxide or a metal salt of a carboxylic acid represented by General Formula C n H 2n+1 COOH (here, 4≤n≤8), and a main solvent is a carboxylic acid represented by General Formula C n H 2n+1 COOH (here, 4≤n≤8) and is included in an amount of 50% by mass to 90% by mass with respect to 100% by mass of the liquid composition for forming a KNN film.

4. 发明公开

EP3770981A1 LIQUID COMPOSITION FOR FORMING PIEZOELECTRIC FILM AND METHOD FOR FORMING PIEZOELECTRIC FILM IN WHICH SAID LIQUID COMPOSITION IS USED 无效
公开(公告)号：EP3770981A1
公开(公告)日：2021-01-27
申请号：EP19772145.9
申请日：2019-03-12
申请人： Mitsubishi Materials Corporation
发明人： DOI Toshihiro , SOYAMA Nobuyuki
IPC分类号： H01L41/318 , C01G29/00 , C01G53/00 , H01L41/187
摘要： A liquid composition for forming a piezoelectric film formed of a metal oxide including at least Bi, Na, and Ti. A raw material of the Na is a sodium alkoxide, a raw material of the Ti is a titanium alkoxide, a diol and an amine-based stabilizer are included, and a molar ratio of the amine-based stabilizer with respect to the titanium alkoxide (titanium alkoxide:amine-based stabilizer) is 1:0.5 to 1:4. It is preferable that the metal oxide is included as 4% by mass to 20% by mass with respect to 100% by mass of the liquid composition.

5. 发明授权

EP3001449B1 COMPOSITION FOR FORMING FERROELECTRIC THIN FILM, AND METHOD FOR MANUFACTURING SAME 有权转让
公开(公告)号：EP3001449B1
公开(公告)日：2018-12-12
申请号：EP14800755.2
申请日：2014-05-14
申请人： Mitsubishi Materials Corporation
发明人： DOI Toshihiro , SAKURAI Hideaki , SOYAMA Nobuyuki
IPC分类号： H01L21/316 , C08L33/26 , C08L39/06
CPC分类号： H01L21/02197 , C09D133/26 , H01L21/02205 , H01L21/02282 , H01L28/55
摘要： To provide a composition for forming a ferroelectric thin film, which makes it possible to obtain a thin film having high crystallinity by adjusting a Young's modulus of a film formed through a step of temporary firing and a step of permanent firing substantially without causing the occurrence of cracks at the time of permanent firing even when the thickness of a coating film formed per single coating operation is increased and thus makes it possible to increase the manufacturing efficiency of a thin film by reducing the number of times of the coating operation, and to provide a method for manufacturing the composition By using a composition for forming a ferroelectric thin film, which is a composition containing a precursor of a ferroelectric thin film, a solvent, and a reaction control substance, forms a ferroelectric thin film by temporary firing and permanent firing of a coating film, and contains the reaction control substance in such an amount that a Young's modulus of a film formed in a step of temporary firing at a temperature of 200°C to 300°C becomes equal to or less than 42 GPa, and a Young's modulus of a film formed in a step of permanent firing at a temperature of 400°C to 500°C becomes equal to or greater than 55 GPa, a thin film having high crystallinity is formed which substantially does not crack at the time of permanent firing even if the thickness of the coating film formed per single coating operation is increased.

6. 发明公开

EP3041035A1 METHOD FOR MANUFACTURING PNbZT THIN FILM 有权
标题翻译：法生产薄膜PNBZT
公开(公告)号：EP3041035A1
公开(公告)日：2016-07-06
申请号：EP14841257.0
申请日：2014-08-27
申请人： Mitsubishi Materials Corporation
发明人： DOI Toshihiro , SAKURAI Hideaki , SOYAMA Nobuyuki
IPC分类号： H01L21/316 , C01G33/00 , H01L21/8246 , H01L27/105 , H01L41/318
CPC分类号： H01L41/1876 , H01L21/02197 , H01L21/02282 , H01L28/56 , H01L28/75 , H01L41/318
摘要： The method for manufacturing a PNbZT thin film of the present invention includes: a process of preparing a plurality of types of sol-gel solutions having different concentration ratio of zirconium and titanium (Zr/Ti) while satisfying the composition formula Pb z Nb x Zr y Ti 1- yO 3 (0

7. 发明公开

EP3972000A1 PIEZOELECTRIC FILM AND PIEZOELECTRIC ELEMENT 无效
公开(公告)号：EP3972000A1
公开(公告)日：2022-03-23
申请号：EP20841144.7
申请日：2020-07-08
申请人： Mitsubishi Materials Corporation
发明人： TSUJIUCHI Naoto , SOYAMA Nobuyuki
IPC分类号： H01L41/187 , H01L41/318 , H01L41/43
摘要： A piezoelectric film contains iron-containing potassium sodium niobate represented by General Formula (1) and granular crystal particles having an average aspect ratio of 3 or less.

(K x Na 1-x ) a (Fe y Nb z )O 3 ... (1)

In Formula (1), x represents a number satisfying 0

8. 发明公开

EP3124126A1 METHOD FOR FORMING LaNiO3, THIN FILM 有权转让
标题翻译： VERFAHREN ZUR BILDUNG EINER LANIO3-DÜNNSCHICHT
公开(公告)号：EP3124126A1
公开(公告)日：2017-02-01
申请号：EP15769167.6
申请日：2015-03-18
申请人： Mitsubishi Materials Corporation
发明人： FUJII Jun , SAKURAI Hideaki , SOYAMA Nobuyuki
IPC分类号： B05D7/24 , B05D7/00
CPC分类号： B05D3/0209 , B05D3/0218 , B05D3/0413 , B05D5/00 , C01G53/70 , C01P2006/40 , C04B35/01 , C04B35/62218 , C04B2235/3227 , C04B2235/3279 , C04B2235/44 , C04B2235/441 , C04B2235/443 , H01G4/008 , H01G4/10 , H01G4/1272 , H01G4/33 , H01L41/0477 , H01L41/187 , H01L41/317 , H01L41/318 , H01L41/319
摘要： A method for forming a LaNiO 3 thin film is provided, the method including: a step of forming a coating film by coating a substrate surface which is coated with a Pt electrode with a LaNiO 3 thin film-forming liquid composition and drying the LaNiO 3 thin film-forming liquid composition in a state where amounts of H 2 , H 2 O, and CO adsorbed on the substrate surface per 1 cm 2 are 1.0x10 -10 g or less, 2.7×10 -10 g or less, and 4.2x10 -10 g or less, respectively; a step of pre-baking the coating film; and a step of forming a LaNiO 3 thin film by baking the pre-baked coating film.
摘要翻译：提供一种形成LaNiO 3薄膜的方法，该方法包括：通过用LaNiO 3薄膜形成液体组合物涂覆Pt电极的基板表面并干燥LaNiO 3来形成涂膜的步骤在每1cm 2的基板表面上吸附的H 2，H 2 O和CO的量为1.0×10 -10 g以下，2.7×10 -10 g以下，4.2以下的薄膜形成用液体组合物 ×10 -10 g以下; 预涂涂膜的步骤; 以及通过烘烤预烘烤的涂膜来形成LaNiO 3薄膜的步骤。

9. 发明授权

EP2474505B1 PROCESS OF FORMING DIELECTRIC THIN FILM AND THIN FILM CAPACITOR HAVING SAID DIELECTRIC THIN FILM 有权
标题翻译：法形成介质薄膜和薄膜电容介电薄膜
公开(公告)号：EP2474505B1
公开(公告)日：2016-07-27
申请号：EP10813781.1
申请日：2010-09-02
申请人： Mitsubishi Materials Corporation
发明人： SAKURAI Hideaki , WATANABE Toshiaki , SOYAMA Nobuyuki
IPC分类号： C04B35/468 , C04B35/47 , C04B35/624 , H01G4/33 , H01G7/06 , H01L49/02 , C01G23/00 , H01G4/12 , H01L21/02
CPC分类号： C04B35/624 , C01G23/006 , C04B35/4686 , C04B35/47 , C04B2235/441 , C04B2235/6562 , H01G4/1227 , H01G4/33 , H01G7/06 , H01L21/02197 , H01L21/02282 , H01L28/55 , Y10T29/435 , Y10T428/2495

10. 发明公开

EP3001449A1 COMPOSITION FOR FORMING FERROELECTRIC THIN FILM, AND METHOD FOR MANUFACTURING SAME 有权转让
标题翻译：组合物教育的铁电薄膜和工艺及其制造
公开(公告)号：EP3001449A1
公开(公告)日：2016-03-30
申请号：EP14800755.2
申请日：2014-05-14
申请人： Mitsubishi Materials Corporation
发明人： DOI Toshihiro , SAKURAI Hideaki , SOYAMA Nobuyuki
IPC分类号： H01L21/316 , C08L33/26 , C08L39/06
CPC分类号： H01L21/02197 , C09D133/26 , H01L21/02205 , H01L21/02282 , H01L28/55
摘要： To provide a composition for forming a ferroelectric thin film, which makes it possible to obtain a thin film having high crystallinity by adjusting a Young's modulus of a film formed through a step of temporary firing and a step of permanent firing substantially without causing the occurrence of cracks at the time of permanent firing even when the thickness of a coating film formed per single coating operation is increased and thus makes it possible to increase the manufacturing efficiency of a thin film by reducing the number of times of the coating operation, and to provide a method for manufacturing the composition
By using a composition for forming a ferroelectric thin film, which is a composition containing a precursor of a ferroelectric thin film, a solvent, and a reaction control substance, forms a ferroelectric thin film by temporary firing and permanent firing of a coating film, and contains the reaction control substance in such an amount that a Young's modulus of a film formed in a step of temporary firing at a temperature of 200°C to 300°C becomes equal to or less than 42 GPa, and a Young's modulus of a film formed in a step of permanent firing at a temperature of 400°C to 500°C becomes equal to or greater than 55 GPa, a thin film having high crystallinity is formed which substantially does not crack at the time of permanent firing even if the thickness of the coating film formed per single coating operation is increased.
摘要翻译：提供一种组合物用于形成铁电薄膜，这使得有可能获得通过调节通过临时烧成的工序和基本上连续烧制而不引起的发生的步骤中形成的薄膜的杨氏模量具有高结晶性的薄膜以每单涂层手术甚至当涂层的厚度成膜连续烧制时间裂纹增加，因此使得有可能通过减少的涂覆手术的次数增加的薄膜的制造效率，并提供用于通过使用一种组合物用于形成强电介质薄膜的制造组合物的方法，所有这些是含有铁电薄膜，溶剂，反应控制物质的前体的组合物，通过临时烧成而永久地烧制形成的铁电薄膜涂层的电影，并包含反应控制物质在寻求量做了膜的杨氏模量为 MED在在200℃至300℃的温度下临时烧成的步骤变得等于或小于42 GPA，膜的杨氏模量在在400℃-500的温度下连续烧成一个步骤中形成 C.变得等于或大于55 GPA，具有高结晶性的薄膜上形成基本上不在烧制即使皮膜形成每单个涂层手术的厚度增加永久的时间破裂。

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