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1. 发明授权

EP2182556B1 Process for manufacturing solar cell 有权
标题翻译：一种制造太阳能电池的方法
公开(公告)号：EP2182556B1
公开(公告)日：2013-01-16
申请号：EP07830906.9
申请日：2007-10-24
申请人： Mitsubishi Electric Corporation
发明人： NISHIMOTO, Yoichiro
IPC分类号： H01L31/18 , H01L21/306
CPC分类号： H01L31/02363 , Y02E10/50 , Y10S438/96

2. 发明公开

EP2365534A1 METHOD FOR MANUFACTURING SOLAR BATTERY CELL 审中-公开
标题翻译： VERFAHREN ZUR HERSTELLUNG EINER SOLARBATTERIEZELLE
公开(公告)号：EP2365534A1
公开(公告)日：2011-09-14
申请号：EP08878563.9
申请日：2008-12-02
申请人： Mitsubishi Electric Corporation
发明人： NISHIMOTO, Yoichiro
IPC分类号： H01L31/04
CPC分类号： H01L31/1868 , H01L31/02168 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method includes: a first step of forming a passivation film composed of a silicon nitride film on a first surface of a polycrystalline silicon substrate of a first conductive type by plasma CVD; a second step of diffusing an element of a second conductive type into a second surface of the polycrystalline silicon substrate by thermal diffusion to form a diffusion layer, whereby a pn junction is formed; a third step of forming an antireflection film composed of a silicon nitride film on the diffusion layer by plasma CVD; a fourth step of disposing a first electrode paste on the second surface of the polycrystalline silicon substrate; a fifth step of disposing a second electrode paste on the passivation film; and a sixth step of firing the first electrode paste and the second electrode paste to form electrodes.
摘要翻译：一种方法包括：第一步骤，通过等离子体CVD在第一导电类型的多晶硅衬底的第一表面上形成由氮化硅膜构成的钝化膜; 第二步骤，通过热扩散将第二导电类型的元件扩散到多晶硅衬底的第二表面中以形成扩散层，从而形成pn结; 第三步骤，通过等离子体CVD在扩散层上形成由氮化硅膜构成的抗反射膜; 第四步骤，在所述多晶硅基板的第二表面上设置第一电极浆料; 在所述钝化膜上设置第二电极浆料的第五步骤; 以及烧制第一电极浆料和第二电极浆料以形成电极的第六步骤。

3. 发明公开

EP2182556A1 PROCESS FOR MANUFACTURING SOLAR CELL 有权
标题翻译： Verfahren zum Herstellen einer Solarzelle
公开(公告)号：EP2182556A1
公开(公告)日：2010-05-05
申请号：EP07830906.9
申请日：2007-10-24
申请人： Mitsubishi Electric Corporation
发明人： NISHIMOTO, Yoichiro
IPC分类号： H01L31/04 , H01L31/0236
CPC分类号： H01L31/02363 , Y02E10/50 , Y10S438/96
摘要： A solar cell manufacturing method provides a method of manufacturing a solar cell having a texture on a surface of a silicon substrate, to obtain the solar cell manufacturing method capable of manufacturing a solar cell of high performance in a simple manufacturing process. The solar cell manufacturing method includes a first process of forming a porous silicon layer on the surface of the silicon substrate by dipping the silicon substrate into a mixed aqueous solution of an oxidizing reagent containing a metal ion and hydrofluoric acid, and a second process of forming a texture by etching the surface of the silicon substrate after passing the first process, by dipping the silicon substrate into a mixed acid mainly containing hydrofluoric acid and nitric acid.[r]A method of manufacturing a solar cell having a texture on a surface of a silicon substrate includes first forming including forming a porous layer on the surface of the silicon substrate by dipping the silicon substrate into a mixed aqueous solution of oxidizing reagent containing metal ions and hydrofluoric acid; and second forming including forming a texture by etching the surface of the silicon substrate after the first forming by dipping the silicon substrate into a mixed acid mainly containing hydrofluoric acid and nitric acid.
摘要翻译：太阳能电池制造方法提供一种制造在硅衬底的表面上具有纹理的太阳能电池的方法，以获得能够在简单的制造工艺中制造高性能的太阳能电池的太阳能电池制造方法。太阳能电池的制造方法包括通过将硅衬底浸渍到含有金属离子和氢氟酸的氧化试剂的混合水溶液中而在硅衬底的表面上形成多孔硅层的第一工艺和第二工艺通过将硅衬底浸入主要含有氢氟酸和硝酸的混合酸中，通过在通过第一工艺之后蚀刻硅衬底的表面的纹理。[r]一种制造具有在表面上的纹理的太阳能电池的方法硅衬底包括第一成形，包括通过将硅衬底浸入含金属离子和氢氟酸的氧化剂的混合水溶液中而在硅衬底的表面上形成多孔层; 以及第二成形，包括通过在主要含有氢氟酸和硝酸的混合酸中浸渍硅衬底而在第一次成形之后蚀刻硅衬底的表面形成纹理。

4. 发明授权

EP2615634B1 METHOD FOR CLEANING SILICON SUBSTRATE, AND METHOD FOR PRODUCING SOLAR CELL 有权
标题翻译：清理方法硅衬底用于生产太阳能电池的方法
公开(公告)号：EP2615634B1
公开(公告)日：2015-10-14
申请号：EP12779293.5
申请日：2012-03-15
申请人： Mitsubishi Electric Corporation
发明人： NISHIMOTO, Yoichiro , YASUNAGA, Nozomu , MATSUDA, Takayoshi
IPC分类号： H01L21/306 , H01L31/04
CPC分类号： H01L21/30604 , H01L31/02363 , H01L31/18 , Y02E10/50

5. 发明公开

EP2615634A1 METHOD FOR CLEANING SILICON SUBSTRATE, AND METHOD FOR PRODUCING SOLAR CELL 有权
标题翻译：清理方法硅衬底用于生产太阳能电池的方法
公开(公告)号：EP2615634A1
公开(公告)日：2013-07-17
申请号：EP12779293.5
申请日：2012-03-15
申请人： Mitsubishi Electric Corporation
发明人： NISHIMOTO, Yoichiro , YASUNAGA, Nozomu , MATSUDA, Takayoshi
IPC分类号： H01L21/306 , H01L21/304 , H01L31/04
CPC分类号： H01L21/30604 , H01L31/02363 , H01L31/18 , Y02E10/50
摘要： A cleaning method of a silicon substrate includes a first step of etching a surface of a silicon substrate by a metal-ion-containing mixed aqueous solution of an oxidizing agent and hydrofluoric acid and of forming a porous layer on the surface of the silicon substrate, a second step of etching a pore of the porous layer by mixed acid mainly containing hydrofluoric acid and nitric acid and of forming texture on the surface of the silicon substrate, a third step of etching the surface of the silicon substrate on which the texture is formed with an alkaline chemical solution, and a fourth step of treating the silicon substrate etched by the alkaline chemical solution by ozone-containing water, of generating an air bubble within the pore formed in the silicon substrate, and of removing metal and organic impurities from within the pore.
摘要翻译：一个硅衬底的清洗方法包括用氧化剂和氢氟酸的含有金属离子的混合wässrige溶液蚀刻硅衬底的表面和所述硅衬底的表面上形成多孔层的第一步骤，蚀刻通过混酸主要含有氢氟酸和硝酸的多孔层的孔和所述硅衬底的表面上形成纹理的第二步骤中，蚀刻硅衬底的表面的第三步骤在其上的纹理形成用碱性化学溶液，和治疗由碱性化学溶液蚀刻由含臭氧的水，在硅衬底所形成的孔中，在气泡发生的硅基板，以及从内去除金属杂质和有机杂质的第四步孔。

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