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1. 发明授权

EP3089225B1 MICRO-LIGHT-EMITTING DIODE 有权
公开(公告)号：EP3089225B1
公开(公告)日：2018-12-05
申请号：EP16158011.3
申请日：2016-03-01
申请人： Mikro Mesa Technology Co., Ltd.
发明人： CHEN, Li-Yi , CHANG, Pei-Yu , CHAN, Chih-Hui , CHANG, Chun-Yi , LIN, Shih-Chyn , LEE, Hsin-Wei
IPC分类号： H01L33/14 , H01L25/075 , H01L33/00 , H01L23/00
CPC分类号： H01L33/145 , H01L24/83 , H01L2224/73104 , H01L2224/83191 , H01L2924/0002 , H01L2924/00
摘要： A micro-light-emitting diode (micro-LED) (100A) includes a first type semiconductor layer (122), a second type semiconductor (124), a first current controlling layer (130), a first electrode (140), and a second electrode (150). The second type semiconductor layer and the first current controlling layer are joined with the first type semiconductor layer. The first current controlling layer has at least one opening (131) therein. The first electrode is electrically coupled with the first type semiconductor layer through the opening. The second electrode is electrically coupled with the second type semiconductor layer. At least one of the first electrode and the second electrode has a light-permeable part. A vertical projection of the first current controlling layer on said one of the first electrode and the second electrode overlaps with the light-permeable part. The light-permeable part is transparent or semi-transparent.

2. 发明公开

EP3089225A1 MICRO-LIGHT-EMITTING DIODE 有权
标题翻译： MIKRO-LEUCHTDIODE
公开(公告)号：EP3089225A1
公开(公告)日：2016-11-02
申请号：EP16158011.3
申请日：2016-03-01
申请人： Mikro Mesa Technology Co., Ltd.
发明人： CHEN, Li-Yi , CHANG, Pei-Yu , CHAN, Chih-Hui , CHANG, Chun-Yi , LIN, Shih-Chyn , LEE, Hsin-Wei
IPC分类号： H01L33/14 , H01L25/075 , H01L33/00
CPC分类号： H01L33/145 , H01L24/83 , H01L2224/73104 , H01L2224/83191 , H01L2924/0002 , H01L2924/00
摘要： A micro-light-emitting diode (micro-LED) (100A) includes a first type semiconductor layer (122), a second type semiconductor (124), a first current controlling layer (130), a first electrode (140), and a second electrode (150). The second type semiconductor layer and the first current controlling layer are joined with the first type semiconductor layer. The first current controlling layer has at least one opening (131) therein. The first electrode is electrically coupled with the first type semiconductor layer through the opening. The second electrode is electrically coupled with the second type semiconductor layer. At least one of the first electrode and the second electrode has a light-permeable part. A vertical projection of the first current controlling layer on said one of the first electrode and the second electrode overlaps with the light-permeable part. The light-permeable part is transparent or semi-transparent.
摘要翻译：微型发光二极管（100A）包括第一类型半导体层（122），第二类型半导体（124），第一电流控制层（130），第一电极（140）和第二电极（150）。第二类型半导体层和第一电流控制层与第一类型半导体层接合。第一电流控制层在其中具有至少一个开口（131）。第一电极通过开口与第一类型半导体层电耦合。第二电极与第二类型半导体层电耦合。第一电极和第二电极中的至少一个具有透光部分。第一电流控制层在第一电极和第二电极之一上的垂直投影与透光部重叠。透光部分是透明或半透明的。

3. 发明授权

EP3128543B1 TRANSFER HEAD ARRAY AND TRANSFERRING METHOD 有权
公开(公告)号：EP3128543B1
公开(公告)日：2018-09-26
申请号：EP16181728.3
申请日：2016-07-28
申请人： Mikro Mesa Technology Co., Ltd.
发明人： CHEN, Li-Yi , CHANG, Pei-Yu , CHAN, Chih-Hui , CHANG, Chun-Yi , LIN, Shih-Chyn , LEE, Hsin-Wei
IPC分类号： H01L21/683 , H01L23/00
CPC分类号： B25J7/00 , B25J15/0052 , B25J15/008 , B25J15/0085 , H01L21/6833 , H01L21/6835 , H01L24/75 , H01L24/95 , H01L24/97 , H01L2221/68354 , H01L2221/68368 , H01L2224/75303 , H01L2224/7531 , H01L2224/75312 , H01L2224/75315 , H01L2224/75725 , H01L2224/7598 , H01L2224/95001 , H01L2224/95136
摘要： A transfer head array (110) includes a body (110) and a plurality of transfer heads (120). The body has a first surface, a second surface opposite to the first surface, and a plurality of recesses (111). The first surface has at least one chucking region and at least one interference avoidance region, and the recesses are separated from each other and are disposed in the interference avoidance region. The transfer heads are disposed on the chucking region.

4. 发明公开

EP3128543A1 TRANSFER HEAD ARRAY AND TRANSFERRING METHOD 有权
标题翻译： ÜBERTRAGUNGSKOPFANORDNUNGUNDÜBERTRAGUNGSVERFAHREN
公开(公告)号：EP3128543A1
公开(公告)日：2017-02-08
申请号：EP16181728.3
申请日：2016-07-28
申请人： Mikro Mesa Technology Co., Ltd.
发明人： CHEN, Li-Yi , CHANG, Pei-Yu , CHAN, Chih-Hui , CHANG, Chun-Yi , LIN, Shih-Chyn , LEE, Hsin-Wei
IPC分类号： H01L21/683 , H01L23/00
CPC分类号： B25J7/00 , B25J15/0052 , B25J15/008 , B25J15/0085 , H01L21/6833 , H01L21/6835 , H01L24/75 , H01L24/95 , H01L24/97 , H01L2221/68354 , H01L2221/68368 , H01L2224/75303 , H01L2224/7531 , H01L2224/75312 , H01L2224/75315 , H01L2224/75725 , H01L2224/7598 , H01L2224/95001 , H01L2224/95136
摘要： A transfer head array (110) includes a body (110) and a plurality of transfer heads (120). The body has a first surface, a second surface opposite to the first surface, and a plurality of recesses (111). The first surface has at least one chucking region and at least one interference avoidance region, and the recesses are separated from each other and are disposed in the interference avoidance region. The transfer heads are disposed on the chucking region.
摘要翻译：转印头阵列（110）包括主体（110）和多个转印头（120）。主体具有第一表面，与第一表面相对的第二表面和多个凹槽（111）。第一表面具有至少一个夹持区域和至少一个干涉避免区域，并且凹部彼此分离并且设置在防干扰区域中。转印头设置在夹持区域上。

5. 发明授权

EP3096363B1 MICRO-LIGHT-EMITTING DIODE 有权
公开(公告)号：EP3096363B1
公开(公告)日：2018-12-05
申请号：EP16158015.4
申请日：2016-03-01
申请人： Mikro Mesa Technology Co., Ltd.
发明人： CHEN, Li-Yi , CHANG, Pei-Yu , CHAN, Chih-Hui , CHANG, Chun-Yi , LIN, Shih-Chyn , LEE, Hsin-Wei
IPC分类号： H01L33/14 , H01L25/075 , H01L33/00 , H01L23/00
CPC分类号： H01L33/145 , H01L24/83 , H01L33/0016 , H01L33/0033 , H01L2224/73104 , H01L2224/83001 , H01L2224/83191 , H01L2924/0002 , H01L2924/00
摘要： A micro-light-emitting diode (micro-LED) (100A) includes a first type semiconductor layer (122), a second type semiconductor layer (124), a first edge isolation structure (130), a first electrode (140), and a second electrode (150). The second type semiconductor layer and the first edge isolation structure are joined with the first type semiconductor layer. The first electrode is electrically coupled with the first type semiconductor layer. At least a part of a vertical projection of an edge of the first type semiconductor layer on the first electrode overlaps with the first electrode. The first edge isolation structure is at least partially located on the part of the first type semiconductor layer. The second electrode is electrically coupled with the second type semiconductor layer.

6. 发明公开

EP3223305A1 INTERMEDIATE STRUCTURE FOR TRANSFER OF SEMICONDUCTOR MICRO-DEVICES, METHOD FOR PREPARING SEMICONDUCTOR MICRO-DEVICES FOR TRANSFER AND PROCESSING ARRAY OF SEMICONDUCTOR MICRO-DEVICES 有权
标题翻译：半导体微器件转移的中间结构，制备半导体微器件转移半导体微器件和处理阵列的方法
公开(公告)号：EP3223305A1
公开(公告)日：2017-09-27
申请号：EP17162420.8
申请日：2017-03-22
申请人： Mikro Mesa Technology Co., Ltd.
发明人： CHEN, Li-Yi , CHANG, Pei-Yu , CHAN, Chih-Hui , CHANG, Chun-Yi , LIN, Shih-Chyn , LEE, Hsin-Wei
IPC分类号： H01L21/67 , H01L21/683
CPC分类号： H01L22/22 , H01L21/67144 , H01L21/67271 , H01L21/6831 , H01L21/6838 , H01L22/14 , H01L25/0753
摘要： A method for preparing a plurality of micro-devices for transfer includes temporarily bonding the micro-devices onto a carrier substrate; testing the micro-devices on the carrier substrate to determine if there is at least one first failed micro-device in the micro-devices; and removing the first failed micro-device from the carrier substrate.
摘要翻译：用于制备用于转移的多个微器件的方法包括将微器件暂时接合到载体衬底上; 测试载体衬底上的微器件以确定微器件中是否存在至少一个第一失效的微器件; 以及从载体衬底移除第一失效微器件。

7. 发明公开

EP3168884A1 LIGHT-EMITTING DIODE 审中-公开
标题翻译：发光二极管
公开(公告)号：EP3168884A1
公开(公告)日：2017-05-17
申请号：EP16194889.8
申请日：2016-10-20
申请人： Mikro Mesa Technology Co., Ltd.
发明人： CHEN, Li-Yi , CHANG, Pei-Yu , CHAN, Chih-Hui , CHANG, Chun-Yi , LIN, Shih-Chyn , LEE, Hsin-Wei
IPC分类号： H01L33/02 , H01L33/14
CPC分类号： H01L33/025 , H01L33/007 , H01L33/0075 , H01L33/145
摘要： A light-emitting diode (LED) (100H) includes a first type semiconductor layer (122), a second type semiconductor layer (124), a current controlling structure (230), a first electrode (240), and a second electrode (242). The second type semiconductor layer 124) is joined with the first type semiconductor layer (122). The current controlling structure (230) is joined with the first type semiconductor layer (122), and the current controlling structure (230) has at least one current-injecting zone therein (232). The first electrode (240) is electrically coupled with the first type semiconductor layer (122) through the current-injecting zone (232) of the current controlling structure (230). The second electrode (242) is electrically coupled with the second type semiconductor layer (124).
摘要翻译：发光二极管（LED）（100H）包括第一类型半导体层（122），第二类型半导体层（124），电流控制结构（230），第一电极（240）和第二电极 242）。第二类型半导体层124）与第一类型半导体层（122）接合。电流控制结构（230）与第一类型半导体层（122）结合，并且电流控制结构（230）在其中具有至少一个电流注入区域（232）。第一电极（240）通过电流控制结构（230）的电流注入区（232）与第一类型半导体层（122）电耦合。第二电极（242）与第二类型半导体层（124）电耦合。

8. 发明公开

EP3096363A1 MICRO-LIGHT-EMITTING DIODE 有权
标题翻译：微型发光二极管
公开(公告)号：EP3096363A1
公开(公告)日：2016-11-23
申请号：EP16158015.4
申请日：2016-03-01
申请人： Mikro Mesa Technology Co., Ltd.
发明人： CHEN, Li-Yi , CHANG, Pei-Yu , CHAN, Chih-Hui , CHANG, Chun-Yi , LIN, Shih-Chyn , LEE, Hsin-Wei
IPC分类号： H01L33/14 , H01L25/075 , H01L33/00
CPC分类号： H01L33/145 , H01L24/83 , H01L33/0016 , H01L33/0033 , H01L2224/73104 , H01L2224/83001 , H01L2224/83191 , H01L2924/0002 , H01L2924/00
摘要： A micro-light-emitting diode (micro-LED) (100A) includes a first type semiconductor layer (122), a second type semiconductor layer (124), a first edge isolation structure (130), a first electrode (140), and a second electrode (150). The second type semiconductor layer and the first edge isolation structure are joined with the first type semiconductor layer. The first electrode is electrically coupled with the first type semiconductor layer. At least a part of a vertical projection of an edge of the first type semiconductor layer on the first electrode overlaps with the first electrode. The first edge isolation structure is at least partially located on the part of the first type semiconductor layer. The second electrode is electrically coupled with the second type semiconductor layer.
摘要翻译：微发光二极管（micro-LED）（100A）包括第一类型半导体层（122），第二类型半导体层（124），第一边缘隔离结构（130），第一电极（140）和第二电极（150）。第二类型半导体层和第一边缘隔离结构与第一类型半导体层结合。第一电极与第一类型半导体层电耦合。第一电极上的第一类型半导体层的边缘的垂直投影的至少一部分与第一电极重叠。第一边缘隔离结构至少部分地位于第一类型半导体层的一部分上。第二电极与第二类型半导体层电耦合。

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