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1. 发明公开

EP1394857A2 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：EP1394857A2
公开(公告)日：2004-03-03
申请号：EP03019120.9
申请日：2003-08-23
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Takehara, Hideki , Kanazawa, Kunihiko , Yoshikawa, Noriyuki
IPC分类号： H01L25/16 , H01L25/07 , H01L23/34
CPC分类号： H01L25/16 , H01L23/3677 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/0652 , H01L2224/451 , H01L2224/48091 , H01L2224/48227 , H01L2224/49171 , H01L2924/00014 , H01L2924/01019 , H01L2924/09701 , H01L2924/16152 , H01L2924/19041 , H01L2924/3011 , H05K1/0206 , H05K1/0306 , H05K1/183 , H05K3/4061 , H05K3/4605 , H05K2203/049 , H01L2924/00 , H01L2924/00015 , H01L2224/05599
摘要： The present invention provides a semiconductor device comprising as a core substrate a high thermo conductive ceramic substrate (9) having circuit patterns (28,29) on opposed surfaces. The high thermo conductive ceramic substrate (9) has on one surface a first circuit board (10) of at least one layer having a first cavity structure (12), and on the other surface a second circuit board (11) of at least one layer having a second cavity structure (12). Afirst active element (1) is mounted on the circuit pattern on the high thermo conductive ceramic substrate within the first cavity, a second active element (13) is mounted on the circuit pattern on the high thermo conductive ceramic substrate within the second cavity, an external electrode (4) is integrated with the surface of the second circuit board (11), and the first circuit board (10) surface is equipped with a cap (8) or sealed with resin. A heat dissipation via (26) is formed on the second circuit board (11), the high thermo conductive ceramic substrate (9) and the external electrode (4) on the surface of the second circuit board (11) are connected thermally to each other, and heat of at least one active element selected from the first active element (1) and the second active element is dissipated outward through the high thermo conductive ceramic substrate (9), the heat dissipation via (26) and the external electrode (4) on the surface of the second circuit board (11). The semiconductor device is downsized while securing transverse strength and heat dissipation characteristics of a heat-generating semiconductor element.
摘要翻译：本发明提供了一种半导体器件，该器件包括在相对表面上具有电路图案（28,29）的高导热陶瓷基片（9）作为核心基片。高导热陶瓷基板（9）在一个表面上具有至少一个具有第一腔结构（12）的层的第一电路板（10），并且在另一个表面上具有至少一个第二电路板（11）层具有第二腔体结构（12）。第一有源元件（1）安装在第一腔内的高导热陶瓷基板上的电路图案上，第二有源元件（13）安装在第二腔内的高导热陶瓷基板上的电路图案上，外电极4与第二电路板11的表面成为一体，第一电路板10的表面配备有帽8或用树脂密封。在第二电路板（11）上形成散热通孔（26），第二电路板（11）表面上的高导热陶瓷基板（9）和外部电极（4）热连接至并且从第一有源元件（1）和第二有源元件中选择的至少一个有源元件的热量通过高导热陶瓷基板（9），散热通孔（26）和外部电极（ 4）在第二电路板（11）的表面上。在确保发热半导体元件的横向强度和散热特性的同时，半导体器件小型化。

2. 发明公开

EP1304909A1 High-frequency semiconductor device 有权
标题翻译：高频半导体装置
公开(公告)号：EP1304909A1
公开(公告)日：2003-04-23
申请号：EP02023221.1
申请日：2002-10-16
申请人： Matsushita Electric Industrial Co., Ltd.
发明人： Takehara, Hideki , Yoshikawa, Noriyuki , Kanazawa, Kunihiko , Nakatani, Seiichi
IPC分类号： H05K1/02
CPC分类号： H05K1/186 , H01L23/3121 , H01L23/5389 , H01L23/66 , H01L24/45 , H01L24/48 , H01L2224/16225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2924/00014 , H01L2924/01019 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/12041 , H01L2924/14 , H01L2924/16152 , H01L2924/181 , H01L2924/19041 , H01L2924/19105 , H01L2924/3011 , H01L2924/3025 , H05K1/0306 , H05K1/112 , H05K1/183 , H05K3/284 , H05K3/4614 , H05K3/4629 , H01L2924/00015 , H01L2924/00 , H01L2224/45015 , H01L2924/207
摘要： The invention relates to a high-frequency semiconductor device comprising a ceramic substrate (2); an element group (1a,1b,1c) including semiconductor elements and passive components mounted onto a bottom portion of the ceramic substrate (2); and a composite resin material layer formed on the bottom portion of the ceramic substrate so as to bury the element group; wherein the composite resin material layer(10) is formed by a composite resin material including an epoxy resin and an inorganic filler material, and the composite resin material layer has a flat bottom surface on which electrodes (4) for connecting to the outside are formed.

4. 发明公开

EP1394857A3 Semiconductor device 审中-公开
公开(公告)号：EP1394857A3
公开(公告)日：2004-04-07
申请号：EP03019120.9
申请日：2003-08-23
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Takehara, Hideki , Kanazawa, Kunihiko , Yoshikawa, Noriyuki
IPC分类号： H01L25/16 , H01L25/07 , H01L23/34 , H01L23/367
CPC分类号： H01L25/16 , H01L23/3677 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/0652 , H01L2224/451 , H01L2224/48091 , H01L2224/48227 , H01L2224/49171 , H01L2924/00014 , H01L2924/01019 , H01L2924/09701 , H01L2924/16152 , H01L2924/19041 , H01L2924/3011 , H05K1/0206 , H05K1/0306 , H05K1/183 , H05K3/4061 , H05K3/4605 , H05K2203/049 , H01L2924/00 , H01L2924/00015 , H01L2224/05599
摘要： The present invention provides a semiconductor device comprising as a core substrate a high thermo conductive ceramic substrate (9) having circuit patterns (28,29) on opposed surfaces. The high thermo conductive ceramic substrate (9) has on one surface a first circuit board (10) of at least one layer having a first cavity structure (12), and on the other surface a second circuit board (11) of at least one layer having a second cavity structure (12). Afirst active element (1) is mounted on the circuit pattern on the high thermo conductive ceramic substrate within the first cavity, a second active element (13) is mounted on the circuit pattern on the high thermo conductive ceramic substrate within the second cavity, an external electrode (4) is integrated with the surface of the second circuit board (11), and the first circuit board (10) surface is equipped with a cap (8) or sealed with resin. A heat dissipation via (26) is formed on the second circuit board (11), the high thermo conductive ceramic substrate (9) and the external electrode (4) on the surface of the second circuit board (11) are connected thermally to each other, and heat of at least one active element selected from the first active element (1) and the second active element is dissipated outward through the high thermo conductive ceramic substrate (9), the heat dissipation via (26) and the external electrode (4) on the surface of the second circuit board (11). The semiconductor device is downsized while securing transverse strength and heat dissipation characteristics of a heat-generating semiconductor element.

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