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2. 发明公开

EP1394857A3 Semiconductor device 审中-公开
公开(公告)号：EP1394857A3
公开(公告)日：2004-04-07
申请号：EP03019120.9
申请日：2003-08-23
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Takehara, Hideki , Kanazawa, Kunihiko , Yoshikawa, Noriyuki
IPC分类号： H01L25/16 , H01L25/07 , H01L23/34 , H01L23/367
CPC分类号： H01L25/16 , H01L23/3677 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/0652 , H01L2224/451 , H01L2224/48091 , H01L2224/48227 , H01L2224/49171 , H01L2924/00014 , H01L2924/01019 , H01L2924/09701 , H01L2924/16152 , H01L2924/19041 , H01L2924/3011 , H05K1/0206 , H05K1/0306 , H05K1/183 , H05K3/4061 , H05K3/4605 , H05K2203/049 , H01L2924/00 , H01L2924/00015 , H01L2224/05599
摘要： The present invention provides a semiconductor device comprising as a core substrate a high thermo conductive ceramic substrate (9) having circuit patterns (28,29) on opposed surfaces. The high thermo conductive ceramic substrate (9) has on one surface a first circuit board (10) of at least one layer having a first cavity structure (12), and on the other surface a second circuit board (11) of at least one layer having a second cavity structure (12). Afirst active element (1) is mounted on the circuit pattern on the high thermo conductive ceramic substrate within the first cavity, a second active element (13) is mounted on the circuit pattern on the high thermo conductive ceramic substrate within the second cavity, an external electrode (4) is integrated with the surface of the second circuit board (11), and the first circuit board (10) surface is equipped with a cap (8) or sealed with resin. A heat dissipation via (26) is formed on the second circuit board (11), the high thermo conductive ceramic substrate (9) and the external electrode (4) on the surface of the second circuit board (11) are connected thermally to each other, and heat of at least one active element selected from the first active element (1) and the second active element is dissipated outward through the high thermo conductive ceramic substrate (9), the heat dissipation via (26) and the external electrode (4) on the surface of the second circuit board (11). The semiconductor device is downsized while securing transverse strength and heat dissipation characteristics of a heat-generating semiconductor element.

3. 发明公开

EP1569353A3 High frequency circuit device 审中-公开
标题翻译： RF电路
公开(公告)号：EP1569353A3
公开(公告)日：2008-01-02
申请号：EP05251118.5
申请日：2005-02-25
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD
发明人： Kanazawa, Kunihiko
IPC分类号： H04B1/40 , H04B1/00 , H04B1/04
CPC分类号： H04B1/006 , H03F3/24 , H04B1/005 , H04B1/0092 , H04B1/0483 , H04B1/52 , H04B2001/0408
摘要： A high-frequency circuit device is provided that achieves cost reduction and reduction in power consumption and does not require an additional high-frequency amplifier even when a transmission frequency band is newly added. The high-frequency circuit device has a configuration including a transmission amplifier circuit for transmitting high-frequency power from an antenna, which includes at least one high-frequency amplifier (18) for a wide frequency band that amplifies signals in a plurality of transmission frequency bands differing by not less than 200 MHz from each other, a duplexer (31, 32) that is provided for performing simultaneous transmission/reception, upstream and downstream switch circuits (21, 8) in the direction of transmission that are provided so as to sandwich the duplexer between the high-frequency amplifier for a wide frequency band and the antenna (7) and are switched on when the simultaneous transmission/reception is performed, and a power supply amplitude modulator (10) that supplies an amplitude modulation voltage to a power supply terminal of the transmission amplifier circuit.

4. 发明公开

EP1569353A2 High frequency circuit device 审中-公开
标题翻译：高频电路装置
公开(公告)号：EP1569353A2
公开(公告)日：2005-08-31
申请号：EP05251118.5
申请日：2005-02-25
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Kanazawa, Kunihiko
IPC分类号： H04B1/40
CPC分类号： H04B1/006 , H03F3/24 , H04B1/005 , H04B1/0092 , H04B1/0483 , H04B1/52 , H04B2001/0408
摘要： A high-frequency circuit device is provided that achieves cost reduction and reduction in power consumption and does not require an additional high-frequency amplifier even when a transmission frequency band is newly added. The high-frequency circuit device has a configuration including a transmission amplifier circuit for transmitting high-frequency power from an antenna, which includes at least one high-frequency amplifier (18) for a wide frequency band that amplifies signals in a plurality of transmission frequency bands differing by not less than 200 MHz from each other, a duplexer (31, 32) that is provided for performing simultaneous transmission/reception, upstream and downstream switch circuits (21, 8) in the direction of transmission that are provided so as to sandwich the duplexer between the high-frequency amplifier for a wide frequency band and the antenna (7) and are switched on when the simultaneous transmission/reception is performed, and a power supply amplitude modulator (10) that supplies an amplitude modulation voltage to a power supply terminal of the transmission amplifier circuit.
摘要翻译：提供了一种高频电路装置，其实现了成本降低和功耗降低，并且即使当新增加传输频带时也不需要额外的高频放大器。高频电路装置具有包括用于从天线发射高频功率的发射放大器电路的配置，其包括用于放大多个发射频率中的信号的宽频带的至少一个高频放大器（18）其特征在于，为了进行同时发送接收而设置的双工器（31,32），在发送方向上的上游侧和下游侧的开关电路（21,8）在宽频带的高频放大器与天线（7）之间夹持双工器，并且在进行同时发送/接收时接通双工器，以及电源振幅调制器（10），将振幅调制电压提供给发射放大器电路的电源端子。

5. 发明公开

EP1289159A3 High-frequency circuit device and mobile communiation apparatus 有权
标题翻译：高频开关器件和移动通信设备
公开(公告)号：EP1289159A3
公开(公告)日：2004-12-29
申请号：EP02255986.8
申请日：2002-08-28
申请人： Matsushita Electric Industrial Co., Ltd.
发明人： Kanazawa, Kunihiko , Nakatsuka, Tadayoshi
IPC分类号： H04B1/50
CPC分类号： H04B1/50 , H04B1/406
摘要： A high-frequency circuit device is provided that is used in a multiband mobile phone or the like and reduces transmission losses in high-frequency switch circuits so that the output power of transmission amplifiers is decreased, thereby achieving a substantial reduction in power consumption. In a first high-frequency switch circuit (16) provided between a first transmission amplifier (11) in a GSM circuit and an antenna (24), a strip line having a length corresponding to 1/4 of a wavelength in a GSM frequency band of approximately 900 MHz is provided as a phase adjusting unit (25) in series connection with a transmission signal path.

6. 发明公开

EP1394857A2 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：EP1394857A2
公开(公告)日：2004-03-03
申请号：EP03019120.9
申请日：2003-08-23
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Takehara, Hideki , Kanazawa, Kunihiko , Yoshikawa, Noriyuki
IPC分类号： H01L25/16 , H01L25/07 , H01L23/34
CPC分类号： H01L25/16 , H01L23/3677 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/0652 , H01L2224/451 , H01L2224/48091 , H01L2224/48227 , H01L2224/49171 , H01L2924/00014 , H01L2924/01019 , H01L2924/09701 , H01L2924/16152 , H01L2924/19041 , H01L2924/3011 , H05K1/0206 , H05K1/0306 , H05K1/183 , H05K3/4061 , H05K3/4605 , H05K2203/049 , H01L2924/00 , H01L2924/00015 , H01L2224/05599
摘要： The present invention provides a semiconductor device comprising as a core substrate a high thermo conductive ceramic substrate (9) having circuit patterns (28,29) on opposed surfaces. The high thermo conductive ceramic substrate (9) has on one surface a first circuit board (10) of at least one layer having a first cavity structure (12), and on the other surface a second circuit board (11) of at least one layer having a second cavity structure (12). Afirst active element (1) is mounted on the circuit pattern on the high thermo conductive ceramic substrate within the first cavity, a second active element (13) is mounted on the circuit pattern on the high thermo conductive ceramic substrate within the second cavity, an external electrode (4) is integrated with the surface of the second circuit board (11), and the first circuit board (10) surface is equipped with a cap (8) or sealed with resin. A heat dissipation via (26) is formed on the second circuit board (11), the high thermo conductive ceramic substrate (9) and the external electrode (4) on the surface of the second circuit board (11) are connected thermally to each other, and heat of at least one active element selected from the first active element (1) and the second active element is dissipated outward through the high thermo conductive ceramic substrate (9), the heat dissipation via (26) and the external electrode (4) on the surface of the second circuit board (11). The semiconductor device is downsized while securing transverse strength and heat dissipation characteristics of a heat-generating semiconductor element.
摘要翻译：本发明提供了一种半导体器件，该器件包括在相对表面上具有电路图案（28,29）的高导热陶瓷基片（9）作为核心基片。高导热陶瓷基板（9）在一个表面上具有至少一个具有第一腔结构（12）的层的第一电路板（10），并且在另一个表面上具有至少一个第二电路板（11）层具有第二腔体结构（12）。第一有源元件（1）安装在第一腔内的高导热陶瓷基板上的电路图案上，第二有源元件（13）安装在第二腔内的高导热陶瓷基板上的电路图案上，外电极4与第二电路板11的表面成为一体，第一电路板10的表面配备有帽8或用树脂密封。在第二电路板（11）上形成散热通孔（26），第二电路板（11）表面上的高导热陶瓷基板（9）和外部电极（4）热连接至并且从第一有源元件（1）和第二有源元件中选择的至少一个有源元件的热量通过高导热陶瓷基板（9），散热通孔（26）和外部电极（ 4）在第二电路板（11）的表面上。在确保发热半导体元件的横向强度和散热特性的同时，半导体器件小型化。

7. 发明公开

EP1289159A2 High-frequency circuit device and mobile communiation apparatus 有权
标题翻译： Hochfrequenzschalteinrichtung und mobilesKommunikationsgerät
公开(公告)号：EP1289159A2
公开(公告)日：2003-03-05
申请号：EP02255986.8
申请日：2002-08-28
申请人： Matsushita Electric Industrial Co., Ltd.
发明人： Kanazawa, Kunihiko , Nakatsuka, Tadayoshi
IPC分类号： H04B1/50
CPC分类号： H04B1/50 , H04B1/406
摘要： A high-frequency circuit device is provided that is used in a multiband mobile phone or the like and reduces transmission losses in high-frequency switch circuits so that the output power of transmission amplifiers is decreased, thereby achieving a substantial reduction in power consumption. In a first high-frequency switch circuit (16) provided between a first transmission amplifier (11) in a GSM circuit and an antenna (24), a strip line having a length corresponding to 1/4 of a wavelength in a GSM frequency band of approximately 900 MHz is provided as a phase adjusting unit (25) in series connection with a transmission signal path.
摘要翻译：提供了一种高频电路装置，其用于多频带移动电话等，并且降低了高频开关电路中的传输损耗，从而降低了发射放大器的输出功率，从而实现了功耗的显着降低。在设置在GSM电路中的第一发送放大器（11）和天线（24）之间的第一高频开关电路（16）中，具有对应于GSM频带中波长的1/4的长度的带状线提供大约900MHz作为与发送信号路径串联连接的相位调整单元（25）。

8. 发明授权

EP1289159B1 High-frequency circuit device and mobile communiation apparatus 有权
标题翻译：高频开关器件和移动通信设备
公开(公告)号：EP1289159B1
公开(公告)日：2006-03-08
申请号：EP02255986.8
申请日：2002-08-28
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Kanazawa, Kunihiko , Nakatsuka, Tadayoshi
IPC分类号： H04B1/50
CPC分类号： H04B1/50 , H04B1/406
摘要： A high-frequency circuit device is provided that is used in a multiband mobile phone or the like and reduces transmission losses in high-frequency switch circuits so that the output power of transmission amplifiers is decreased, thereby achieving a substantial reduction in power consumption. In a first high-frequency switch circuit (16) provided between a first transmission amplifier (11) in a GSM circuit and an antenna (24), a strip line having a length corresponding to 1/4 of a wavelength in a GSM frequency band of approximately 900 MHz is provided as a phase adjusting unit (25) in series connection with a transmission signal path.

9. 发明公开

EP1566893A1 High-Frequency circuit device 审中-公开
标题翻译： Hochfrequenzschaltungsanordnung
公开(公告)号：EP1566893A1
公开(公告)日：2005-08-24
申请号：EP05250854.6
申请日：2005-02-15
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Kanazawa, Kunihiko
IPC分类号： H04B1/40 , H04B1/48
CPC分类号： H04B1/406 , H04B1/48
摘要： A high-frequency circuit device is provided that is conformable to both of the TDMA system and the CDMA system as well as a plurality of frequency bands and achieves low cost and low power consumption. The high-frequency circuit device has a configuration including a transmission amplifier circuit for transmitting high-frequency power from an antenna (4) that is composed of a high-frequency amplifier (22) that is shared in the TDMA system and the CDMA system, a duplexer (10) that is provided for performing simultaneous transmission/reception according to the CDMA system, upstream and downstream switch circuits (25, 27) in the direction of transmission that are provided so as to sandwich the duplexer between the transmission amplifier circuit and the antenna and are switched on when the simultaneous transmission/reception is performed according to the CDMA system, and a bypass switch circuit (26) that bypasses the upstream and downstream switch circuits and the duplexer.
摘要翻译：提供了符合TDMA系统和CDMA系统以及多个频带的高频电路装置，并且实现了低成本和低功耗。高频电路装置具有包括用于从由TDMA系统共享的高频放大器（22）和CDMA系统构成的天线（4）发送高频电力的发送放大电路，提供用于根据CDMA系统执行同时发送/接收的双工器（10），在传输方向上的上游和下游交换电路（25,27）被设置为将双工器夹在发送放大器电路和天线，并且当根据CDMA系统执行同时发送/接收时被接通，以及绕过上游和下游开关电路和双工器的旁路开关电路（26）。

10. 发明公开

EP1304909A1 High-frequency semiconductor device 有权
标题翻译：高频半导体装置
公开(公告)号：EP1304909A1
公开(公告)日：2003-04-23
申请号：EP02023221.1
申请日：2002-10-16
申请人： Matsushita Electric Industrial Co., Ltd.
发明人： Takehara, Hideki , Yoshikawa, Noriyuki , Kanazawa, Kunihiko , Nakatani, Seiichi
IPC分类号： H05K1/02
CPC分类号： H05K1/186 , H01L23/3121 , H01L23/5389 , H01L23/66 , H01L24/45 , H01L24/48 , H01L2224/16225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2924/00014 , H01L2924/01019 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/12041 , H01L2924/14 , H01L2924/16152 , H01L2924/181 , H01L2924/19041 , H01L2924/19105 , H01L2924/3011 , H01L2924/3025 , H05K1/0306 , H05K1/112 , H05K1/183 , H05K3/284 , H05K3/4614 , H05K3/4629 , H01L2924/00015 , H01L2924/00 , H01L2224/45015 , H01L2924/207
摘要： The invention relates to a high-frequency semiconductor device comprising a ceramic substrate (2); an element group (1a,1b,1c) including semiconductor elements and passive components mounted onto a bottom portion of the ceramic substrate (2); and a composite resin material layer formed on the bottom portion of the ceramic substrate so as to bury the element group; wherein the composite resin material layer(10) is formed by a composite resin material including an epoxy resin and an inorganic filler material, and the composite resin material layer has a flat bottom surface on which electrodes (4) for connecting to the outside are formed.

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